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1. 发明授权

US6057586A Method and apparatus for employing a light shield to modulate pixel color responsivity 失效
标题翻译：采用遮光罩调制像素颜色响应度的方法和装置
公开(公告)号：US6057586A
公开(公告)日：2000-05-02
申请号：US937631
申请日：1997-09-26
申请人： Edward J. Bawolek , Lawrence T. Clark , Mark A. Beiley
发明人： Edward J. Bawolek , Lawrence T. Clark , Mark A. Beiley
IPC分类号： G01J3/51 , G02B5/00 , G02B5/20 , H01L27/14 , H01L27/146 , H01L31/02 , H04N5/235 , H01L31/0232 , H01L21/00 , H01L31/00
CPC分类号： H01L27/14636 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H01L27/14654 , H01L27/14685 , H01L27/1469
摘要： A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substrate. The pixel has a first relative responsivity. A light shield is disposed above the substrate to modulate the pixel color responsivity. The light shield forms an aperture whose area is substantially equal to the light receiving area adjusted by a reduction factor. The reduction factor is the result of an arithmetic operation between the first relative responsivity and a second relative responsivity, associated with a second pixel of a second color.
摘要翻译：一种采用遮光罩来调制像素颜色响应度的方法和装置。改进的像素包括具有光接收面积的光电二极管的基板。第一颜色的滤色器阵列材料设置在基板上方。像素具有第一相对响应度。遮光板设置在基板上方以调制像素颜色响应度。遮光板形成其面积基本上等于由减小因子调节的光接收面积的孔径。缩小因子是与第二颜色的第二像素相关联的第一相对响应度和第二相对响应度之间的算术运算的结果。

2. 发明授权

US06933168B2 Method and apparatus for employing a light shield to modulate pixel color responsivity 有权
标题翻译：采用遮光罩调制像素颜色响应度的方法和装置
公开(公告)号：US06933168B2
公开(公告)日：2005-08-23
申请号：US09802464
申请日：2001-03-09
申请人： Edward J. Bawolek , Lawrence T. Clark , Mark A. Beiley
发明人： Edward J. Bawolek , Lawrence T. Clark , Mark A. Beiley
IPC分类号： G01J3/51 , G02B5/00 , G02B5/20 , H01L27/14 , H01L27/146 , H01L31/02 , H04N5/235 , H01L21/00
CPC分类号： H01L27/14636 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H01L27/14654 , H01L27/14685 , H01L27/1469
摘要： A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substrate. The pixel has a first relative responsivity. A light shield is disposed above the substrate to modulate the pixel color responsivity. The light shield forms an aperture whose area is substantially equal to the light receiving area adjusted by a reduction factor. The reduction factor is the result of an arithmetic operation between the first relative responsivity and a second relative responsivity, associated with a second pixel of a second color.
摘要翻译：一种采用遮光罩来调制像素颜色响应度的方法和装置。改进的像素包括具有光接收面积的光电二极管的基板。第一颜色的滤色器阵列材料设置在基板上方。像素具有第一相对响应度。遮光板设置在基板上方以调制像素颜色响应度。遮光板形成其面积基本上等于由减小因子调节的光接收面积的孔径。缩小因子是与第二颜色的第二像素相关联的第一相对响应度和第二相对响应度之间的算术运算的结果。

3. 发明授权

US06235549B1 Method and apparatus for employing a light shield to modulate pixel color responsivity 有权
标题翻译：采用遮光罩调制像素颜色响应度的方法和装置
公开(公告)号：US06235549B1
公开(公告)日：2001-05-22
申请号：US09524081
申请日：2000-03-13
申请人： Edward J. Bawolek , Lawrence T. Clark , Mark A. Beiley
发明人： Edward J. Bawolek , Lawrence T. Clark , Mark A. Beiley
IPC分类号： H01L2100
CPC分类号： H01L27/14636 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H01L27/14654 , H01L27/14685 , H01L27/1469
摘要： A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substrate. The pixel has a first relative responsivity. A light shield is disposed above the substrate to modulate the pixel color responsivity. The light shield forms an aperture whose area is substantially equal to the light receiving area adjusted by a reduction factor. The reduction factor is the result of an arithmetic operation between the first relative responsivity and a second relative responsivity, associated with a second pixel of a second color.
摘要翻译：一种采用遮光罩来调制像素颜色响应度的方法和装置。改进的像素包括具有光接收面积的光电二极管的基板。第一颜色的滤色器阵列材料设置在基板上方。像素具有第一相对响应度。遮光板设置在基板上方以调制像素颜色响应度。遮光板形成其面积基本上等于由减小因子调节的光接收面积的孔径。缩小因子是与第二颜色的第二像素相关联的第一相对响应度和第二相对响应度之间的算术运算的结果。

4. 发明授权

US6040592A Well to substrate photodiode for use in a CMOS sensor on a salicide process 失效
标题翻译：对于在自对准硅化物工艺中的CMOS传感器中使用的衬底光电二极管
公开(公告)号：US6040592A
公开(公告)日：2000-03-21
申请号：US873987
申请日：1997-06-12
申请人： Bart McDaniel , Mark A. Beiley , Lawrence T. Clark , Eric J. Hoffman , Edward J. Bawolek
发明人： Bart McDaniel , Mark A. Beiley , Lawrence T. Clark , Eric J. Hoffman , Edward J. Bawolek
IPC分类号： H04N1/028 , C07D491/048 , H01L27/146 , H01L31/10 , H01L31/113 , H01L31/068 , H01L31/0352
CPC分类号： H01L27/14643 , H01L27/14609 , H01L31/1136
摘要： An image sensor having a well-to-substrate diode as the photodetector. In a preferred embodiment, a modern salicided (CMOS) process is utilized to manufacture the image sensor. The field oxide region above the diode junction is transparent to visible light, thus allowing the photodiode competitive quantum efficiency as compared to devices having source/drain diffusion-to-substrate photodiodes fabricated on a non-salicided process. The photodiode can be integrated as part of a sensor array with digital circuitry using a relatively unmodified digital CMOS process. Furthermore, the structure allows the optical properties of the photodiode to be engineered by modifying the well without deleterious effects, to approximate a first order, on the characteristics of a FET built in another identical well.
摘要翻译：一种具有良好对衬底二极管作为光电检测器的图像传感器。在优选实施例中，利用现代的水银（CMOS）工艺来制造图像传感器。二极管结上方的场氧化物区域对于可见光是透明的，因此与在非水银工艺上制造的源/漏扩散至衬底光电二极管的器件相比，光电二极管的竞争量子效率。光电二极管可以作为具有使用相对未修改的数字CMOS工艺的数字电路的传感器阵列的一部分进行集成。此外，该结构允许光电二极管的光学性质通过修改阱而不会对其内置于另一相同阱中的FET的特性产生有害影响，即接近于一阶。

5. 发明授权

US6118482A Method and apparatus for electrical test of CMOS pixel sensor arrays 失效
标题翻译： CMOS像素传感器阵列的电气测试方法和装置
公开(公告)号：US6118482A
公开(公告)日：2000-09-12
申请号：US986499
申请日：1997-12-08
申请人： Lawrence T. Clark , Mark A. Beiley , Eric J. Hoffman
发明人： Lawrence T. Clark , Mark A. Beiley , Eric J. Hoffman
IPC分类号： H04N5/367 , H04N17/00 , H04N5/335
CPC分类号： H04N5/367 , H04N17/002
摘要： CMOS pixel sensors have been of interest as replacements for CCD's in imaging applications. Such devices promise lower power and simpler system level design through fewer power supply voltages and higher functional integration. It is difficult and cost ineffective to utilize images to test active pixel sensors. Here, a method and apparatus for electrical testing of CMOS pixel sensors is described which involves electrically writing a pattern into the CMOS pixel sensors for the detection of adjacent cell shorts or stuck at faults as well as verification of read-channel circuit functionality and performance. The invention provides for an electrical testing of CMOS pixel array that is simple, time efficient and cost effective for use in, for example, production.
摘要翻译：作为CCD成像应用中的替代品，CMOS像素传感器已经成为关注的焦点。这样的器件通过更少的电源电压和更高的功能集成来承诺更低的功率和更简单的系统级设计。利用图像测试有源像素传感器是困难和成本无效的。这里描述了用于CMOS像素传感器的电测试的方法和装置，其涉及将图案电学写入CMOS像素传感器，用于检测相邻单元短路或卡在故障以及读通道电路功能和性能的验证。本发明提供了CMOS像素阵列的电气测试，其简单，时间高效并且在例如生产中使用成本有效。

6. 发明授权

US5859450A Dark current reducing guard ring 失效
标题翻译：暗电流降低护环
公开(公告)号：US5859450A
公开(公告)日：1999-01-12
申请号：US941800
申请日：1997-09-30
申请人： Lawrence T. Clark , Mark A. Beiley
发明人： Lawrence T. Clark , Mark A. Beiley
IPC分类号： H01L27/14 , H01L27/146 , H01L31/062 , H01L31/10 , H01L31/113 , H01L27/148
CPC分类号： H01L31/113 , H01L27/1463 , H01L27/14643
摘要： A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well is formed within the substrate, beneath the IR. The well is demarcated from the substrate by a first surface. The photodiode further includes a heavily doped region (HDR) of the second conductivity type. The HDR is formed within the IR at a first position. The first surface meets the HDR at substantially the first position.
摘要翻译：提供光电二极管。光电二极管包括允许光通过其中的绝缘区域（IR）。光电二极管还包括第一导电类型的衬底区域和第二导电类型的阱区域。在衬底内形成阱，在IR之下。孔通过第一表面与基底划分。光电二极管还包括第二导电类型的重掺杂区域（HDR）。 HDR在第一位置的IR内形成。第一个表面在大体上的第一个位置与HDR相遇。

7. 发明授权

US06522357B2 Method and apparatus for increasing retention time in image sensors having an electronic shutter 失效
标题翻译：用于增加具有电子快门的图像传感器中的保留时间的方法和装置
公开(公告)号：US06522357B2
公开(公告)日：2003-02-18
申请号：US08939808
申请日：1997-09-30
申请人： Mark A. Beiley , Eric J. Hoffman , Lawrence T. Clark
发明人： Mark A. Beiley , Eric J. Hoffman , Lawrence T. Clark
IPC分类号： H04N314
CPC分类号： H04N5/3595 , H04N5/353
摘要： In a pixel having an electronic shutter, a method of increasing the retention time of the electronic shutter is disclosed. A reset signal is employed to drive a diode node to a predetermined voltage immediately after integration is completed. A sample signal is employed to control a pass gate. The sample signal includes a state where the sample signal is a negative voltage.
摘要翻译：在具有电子快门的像素中，公开了增加电子快门的保持时间的方法。采用复位信号，在集成完成后立即将二极管节点驱动到预定电压。采样信号用于控制通过门。采样信号包括采样信号为负电压的状态。

8. 发明授权

US06433822B1 Method and apparatus for self-calibration and fixed-pattern noise removal in imager integrated circuits 失效
标题翻译：成像仪集成电路中自校准和固定图案噪声去除的方法和装置
公开(公告)号：US06433822B1
公开(公告)日：2002-08-13
申请号：US09052749
申请日：1998-03-31
申请人： Lawrence T. Clark , Mark A. Beiley , Eric J. Hoffman
发明人： Lawrence T. Clark , Mark A. Beiley , Eric J. Hoffman
IPC分类号： H04N5217
CPC分类号： H04N5/361 , H04N5/2176 , H04N5/3658 , H04N5/378 , H04N17/002
摘要： An architecture for self-calibration and fixed-pattern noise removal in imager chips. The column-to-column fixed pattern noise and/or pixel-to-pixel fixed pattern noise is determined through a self-calibration operation. During operation of the imager chip, when a value of a pixel is read, the read value is compensated with the fixed-pattern noise corresponding to either the column fixed pattern noise corresponding to the column having the pixel from which the value was read or to the pixel fixed pattern noise corresponding to the pixel from which the value was read.
摘要翻译：在成像器芯片中进行自校准和固定图案噪声去除的架构。通过自校准操作来确定柱对列固定图案噪声和/或像素到像素的固定图案噪声。在成像器芯片的操作期间，当读取像素的值时，读取值被对应于与具有读取该值的像素的列相对应的列固定图案噪声的固定图案噪声补偿，或者对应于读取该值的像素的像素固定模式噪声。

9. 发明授权

US6157016A Fast CMOS active-pixel sensor array readout circuit with predischarge circuit 失效
标题翻译：具有预放电电路的快速CMOS有源像素传感器阵列读出电路
公开(公告)号：US6157016A
公开(公告)日：2000-12-05
申请号：US940539
申请日：1997-09-30
申请人： Lawrence T. Clark , Mark A. Beiley
发明人： Lawrence T. Clark , Mark A. Beiley
IPC分类号： H01L27/146 , H01L31/02 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14643 , H01L31/02016
摘要： A read out circuit for an active pixel sensor array is provided. The read out circuit includes a first circuit, coupled to a pixel of the array, to receive from the pixel information indicative of an intensity of light detected by the pixel and to drive the information to a read out device when the pixel is accessed. The read out circuit further includes a second circuit, coupled to the first circuit, to reset the read out device prior to access to the pixel.
摘要翻译：提供了一种用于有源像素传感器阵列的读出电路。读出电路包括耦合到阵列的像素的第一电路，以从像素接收指示由像素检测到的光强度的信息，并且当访问像素时将信息驱动到读出装置。读出电路还包括耦合到第一电路的第二电路，以在访问像素之前复位读出的器件。

10. 发明授权

US6133563A Sensor cell having a soft saturation circuit 失效
标题翻译：具有软饱和电路的传感器单元
公开(公告)号：US6133563A
公开(公告)日：2000-10-17
申请号：US940077
申请日：1997-09-29
申请人： Lawrence T. Clark , Mark A. Beiley , Eric J. Hoffman
发明人： Lawrence T. Clark , Mark A. Beiley , Eric J. Hoffman
IPC分类号： H01L27/146 , H04N5/355 , H04N5/3745 , H01J40/14
CPC分类号： H01L27/14609 , H04N3/155 , H04N5/35509
摘要： A method for providing an improved active pixel sensor cell having a soft-saturation circuit. The method includes providing a pixel node and a photodiode coupled to the pixel node. The photodiode receives light and converts the light into an electrical signal representative of light. A soft-saturation circuit for selectively affecting the electrical signal at the pixel node based on the electrical signal at the pixel node based on the electrical signal at the pixel node is also provided.
摘要翻译：一种用于提供具有软饱和电路的改进的有源像素传感器单元的方法。该方法包括提供耦合到像素节点的像素节点和光电二极管。光电二极管接收光并将光转换成代表光的电信号。还提供了一种用于基于像素节点处的电信号，基于像素节点处的电信号来选择性地影响像素节点处的电信号的软饱和电路。

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