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1. 发明授权

US08019943B2 High endurance non-volatile memory devices 失效
公开(公告)号：US08019943B2
公开(公告)日：2011-09-13
申请号：US13089898
申请日：2011-04-19
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/0866 , G06F2212/214 , G06F2212/7208 , G11C2211/5641
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.

2. 发明授权

US08078794B2 Hybrid SSD using a combination of SLC and MLC flash memory arrays 失效
标题翻译：混合SSD使用SLC和MLC闪存阵列的组合
公开(公告)号：US08078794B2
公开(公告)日：2011-12-13
申请号：US11926743
申请日：2007-10-29
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F13/00
CPC分类号： G06F12/1416 , G06F3/0613 , G06F3/0643 , G06F3/0688 , G06F12/0246 , G06F12/0866 , G06F21/32 , G06F21/78 , G06F2212/2022 , G06F2212/7202 , G07C9/00087 , G11C2211/5641
摘要： Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.
摘要翻译：描述了使用单级单元（SLC）和多级单元（MLC）闪存阵列的组合的混合固态驱动器（SSD）。根据本发明的一个方面，使用组合SLC和MLC闪存阵列构建混合SSD。 SSD还包括一个微控制器，用于控制和协调从主机计算设备到MLC闪存阵列的SLC闪存阵列的数据传输。存储器选择指示符通过基于一个或多个标准进行分类数据文件来确定，所述标准包括但不限于将系统文件和用户目录存储在SLC闪速存储器阵列中并将用户文件存储在MLC闪速存储器阵列中; 或将更频繁的访问文件存储在SLC闪存阵列中，而在MLC闪存阵列中访问的文件较少。

3. 发明申请

US20110197017A1 High Endurance Non-Volatile Memory Devices 失效
标题翻译：高耐久性非易失性存储器件
公开(公告)号：US20110197017A1
公开(公告)日：2011-08-11
申请号：US13089898
申请日：2011-04-19
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/02 , G06F12/08
CPC分类号： G06F12/0246 , G06F12/0866 , G06F2212/214 , G06F2212/7208 , G11C2211/5641
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
摘要翻译：描述了高耐久性非易失性存储器件（NVMD）。高耐久性NVMD包括I / O接口，NVM控制器，CPU以及易失性存储器子系统和至少一个非易失性存储器（NVM）模块。易失性存储器缓存子系统被配置为数据高速缓存子系统。当NVMD适用于主机系统时，至少一个NVM模块被配置为数据存储器。 I / O接口被配置为从主机接收数据缓存子系统的传入数据，并将请求数据从数据缓存子系统发送到主机。至少一个NVM模块可以包括至少第一和第二类型的NVM。第一种类型包括SLC闪存，而第二种类型的MLC闪存。 NVM的第一种类型被配置为数据高速缓存子系统和第二类NVM之间的缓冲区。

4. 发明申请

US20110029723A1 Non-Volatile Memory Based Computer Systems 审中-公开
标题翻译：基于非易失性存储器的计算机系统
公开(公告)号：US20110029723A1
公开(公告)日：2011-02-03
申请号：US12885451
申请日：2010-09-18
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06K19/07743 , A45C2011/188 , G06K19/07732 , H05K1/117 , H05K1/118 , H05K1/189 , H05K3/284 , H05K3/4691 , H05K2201/091 , H05K2201/10159 , H05K2203/1527
摘要： Non-volatile memory based computer systems and methods are described. According to one aspect of the invention, at least one non-volatile memory module is coupled to a computer system as main storage. The non-volatile memory module is controlled by a northbridge controller configured to control the non-volatile memory as main memory. The page size of the at least one non-volatile memory module is configured to be the size of one of the cache lines associated with a microprocessor of the computer system. According to another aspect, at least one non-volatile memory module is coupled to a computer system as data read/write buffer of one or more hard disk drives. The non-volatile memory module is controlled by a southbridge controller configured to control the non-volatile memory as an input/out device. The page size of the at least one non-volatile memory module is configured in proportion to characteristics of the hard disk drives.
摘要翻译：描述了基于非易失性存储器的计算机系统和方法。根据本发明的一个方面，至少一个非易失性存储器模块耦合到作为主存储器的计算机系统。非易失性存储器模块由配置成将非易失性存储器控制为主存储器的北桥控制器来控制。至少一个非易失性存储器模块的页面大小被配置为与计算机系统的微处理器相关联的高速缓存行之一的大小。根据另一方面，至少一个非易失性存储器模块作为一个或多个硬盘驱动器的数据读/写缓冲器耦合到计算机系统。非易失性存储器模块由配置成将非易失性存储器控制为输入/输出设备的南桥控制器来控制。至少一个非易失性存储器模块的页面大小被配置成与硬盘驱动器的特性成比例。

5. 发明申请

US20080215800A1 Hybrid SSD Using A Combination of SLC and MLC Flash Memory Arrays 失效
标题翻译：混合SSD使用SLC和MLC闪存阵列的组合
公开(公告)号：US20080215800A1
公开(公告)日：2008-09-04
申请号：US11926743
申请日：2007-10-29
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/1416 , G06F3/0613 , G06F3/0643 , G06F3/0688 , G06F12/0246 , G06F12/0866 , G06F21/32 , G06F21/78 , G06F2212/2022 , G06F2212/7202 , G07C9/00087 , G11C2211/5641
摘要： Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.
摘要翻译：描述了使用单级单元（SLC）和多级单元（MLC）闪存阵列的组合的混合固态驱动器（SSD）。根据本发明的一个方面，使用组合SLC和MLC闪存阵列构建混合SSD。 SSD还包括一个微控制器，用于控制和协调从主机计算设备到MLC闪存阵列的SLC闪存阵列的数据传输。存储器选择指示符通过基于一个或多个标准进行分类数据文件来确定，所述标准包括但不限于将系统文件和用户目录存储在SLC闪速存储器阵列中并将用户文件存储在MLC闪速存储器阵列中; 或将更频繁的访问文件存储在SLC闪存阵列中，而在MLC闪存阵列中访问的文件较少。

6. 发明授权

US07953931B2 High endurance non-volatile memory devices 有权
标题翻译：高耐久性非易失性存储器件
公开(公告)号：US07953931B2
公开(公告)日：2011-05-31
申请号：US12035398
申请日：2008-02-21
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/12
CPC分类号： G06F13/161 , G06F12/0246 , G06F12/0862 , G06F12/123 , G06F2212/7203 , G11C11/5621 , G11C11/5678 , G11C13/0004 , G11C2211/5641 , G11C2211/5643
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
摘要翻译：描述了高耐久性非易失性存储器件（NVMD）。高耐久性NVMD包括I / O接口，NVM控制器，CPU以及易失性存储器子系统和至少一个非易失性存储器（NVM）模块。易失性存储器缓存子系统被配置为数据高速缓存子系统。当NVMD适用于主机系统时，至少一个NVM模块被配置为数据存储器。 I / O接口被配置为从主机接收数据缓存子系统的传入数据，并将请求数据从数据缓存子系统发送到主机。至少一个NVM模块可以包括至少第一和第二类型的NVM。第一种类型包括SLC闪存，而第二种类型的MLC闪存。 NVM的第一种类型被配置为数据高速缓存子系统和第二类NVM之间的缓冲区。

7. 发明授权

US07827348B2 High performance flash memory devices (FMD) 有权
标题翻译：高性能闪存设备（FMD）
公开(公告)号：US07827348B2
公开(公告)日：2010-11-02
申请号：US12017249
申请日：2008-01-21
申请人： Charles C. Lee , I-Kang Yu , David Q. Chow , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： Charles C. Lee , I-Kang Yu , David Q. Chow , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F11/1068 , G11C5/04
摘要： High performance flash memory devices (FMD) are described. According to one exemplary embodiment of the invention, a high performance FMD includes an I/O interface, a FMD controller, and at least one non-volatile memory module along with corresponding at least one channel controller. The I/O interface is configured to connect the high performance FMD to a host computing device The FMD contoller is configured to control data transfer (e.g., data reading, data writing/programming, and data erasing) operations between the host computing device and the non-volatile memory module. The at least one non-volatile memory module, comprising one or more non-volatile memory chips, is configured as a secondary storage for the host computing device. The at least one channel controller is configured to ensure proper and efficient data transfer between a set of data buffers located in the FMD controller and the at least one non-volatile memory module.
摘要翻译：描述了高性能闪存设备（FMD）。根据本发明的一个示例性实施例，高性能FMD包括I / O接口，FMD控制器以及至少一个非易失性存储器模块以及对应的至少一个通道控制器。 I / O接口被配置为将高性能FMD连接到主机计算设备FMD控制器被配置为控制主计算设备和主计算设备之间的数据传输（例如，数据读取，数据写入/编程和数据擦除）操作非易失性内存模块。包括一个或多个非易失性存储器芯片的至少一个非易失性存储器模块被配置为主计算设备的辅助存储器。至少一个通道控制器被配置为确保位于FMD控制器和至少一个非易失性存储器模块中的一组数据缓冲器之间的适当和有效的数据传输。

8. 发明申请

US20080195798A1 Non-Volatile Memory Based Computer Systems and Methods Thereof 审中-公开
标题翻译：基于非易失性存储器的计算机系统及其方法
公开(公告)号：US20080195798A1
公开(公告)日：2008-08-14
申请号：US11932941
申请日：2007-10-31
申请人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
发明人： Charles C. Lee , David Q. Chow , Abraham Chih-Kang Ma , I-Kang Yu , Ming-Shiang Shen
IPC分类号： G06F12/02 , G06F12/00 , G06F12/08
CPC分类号： G06F12/1416 , G06F3/0664 , G06F3/0688 , G06K19/07 , G06K19/07354 , G07C9/00087
摘要： Non-volatile memory based computer systems and methods are described. According to one aspect of the invention, at least one non-volatile memory module is coupled to a computer system as main storage. The non-volatile memory module is controlled by a northbridge controller configured to control the non-volatile memory as main memory. The page size of the at least one non-volatile memory module is configured to be the size of one of the cache lines associated with a microprocessor of the computer system. According to another aspect, at least one non-volatile memory module is coupled to a computer system as data read/write buffer of one or more hard disk drives. The non-volatile memory module is controlled by a southbridge controller configured to control the non-volatile memory as an input/out device. The page size of the at least one non-volatile memory module is configured in proportion to characteristics of the hard disk drives.
摘要翻译：描述了基于非易失性存储器的计算机系统和方法。根据本发明的一个方面，至少一个非易失性存储器模块耦合到作为主存储器的计算机系统。非易失性存储器模块由配置成将非易失性存储器控制为主存储器的北桥控制器来控制。至少一个非易失性存储器模块的页面大小被配置为与计算机系统的微处理器相关联的高速缓存行之一的大小。根据另一方面，至少一个非易失性存储器模块作为一个或多个硬盘驱动器的数据读/写缓冲器耦合到计算机系统。非易失性存储器模块由配置成将非易失性存储器控制为输入/输出设备的南桥控制器来控制。至少一个非易失性存储器模块的页面大小被配置成与硬盘驱动器的特性成比例。

9. 发明申请

US20080192928A1 Portable Electronic Storage Devices with Hardware Security Based on Advanced Encryption Standard 审中-公开
标题翻译：基于高级加密标准的硬件安全便携式电子存储设备
公开(公告)号：US20080192928A1
公开(公告)日：2008-08-14
申请号：US11924448
申请日：2007-10-25
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： H04L9/28 , H04L9/00 , G06F12/14
CPC分类号： G06F12/1416 , G06F21/78 , G06F21/85 , G06F2221/2107 , G06K19/07 , G06K19/07354 , G07C9/00087 , H04L9/0631 , H04L9/0894 , H04L9/3228 , H04L2209/34
摘要： Portable electronic storage devices with hardware based security are described. According to one exemplary embodiment of the present invention, a portable electronic storage device (PESD) comprises a security engine integrated thereon. The security engine is configured to provide data encryption, data decryption, and encryption/decryption key (referred to as a key) generation according to a security standard (e.g., Advance Encryption Standard (AES)). AES is a symmetric encryption algorithm processing data in block of 128 bits. Under the influence of a key, a 128-bit data block is encrypted by transforming the data block in a unique way into a new data block of the same size. AES is symmetric sine the same key is used for encryption and the reverse transformation (i.e., decryption). The only secret necessary to keep for security is the key. AES may use different key-lengths (i.e., 128-bit, 192-bits and 256-bits).
摘要翻译：描述了具有硬件安全性的便携式电子存储设备。根据本发明的一个示例性实施例，便携式电子存储设备（PESD）包括集成在其上的安全引擎。安全引擎被配置为根据安全标准（例如，高级加密标准（AES））提供数据加密，数据解密和加密/解密密钥（称为密钥）生成。 AES是一种对称加密算法，处理128位数据块。在密钥的影响下，通过以独特的方式将数据块变换成相同大小的新数据块来加密128位数据块。 AES是对称正弦，相同的密钥用于加密和反向转换（即解密）。保护安全所必需的唯一秘密就是关键。 AES可以使用不同的密钥长度（即128位，192位和256位）。

10. 发明申请

US20080209112A1 High Endurance Non-Volatile Memory Devices 有权
标题翻译：高耐久性非易失性存储器件
公开(公告)号：US20080209112A1
公开(公告)日：2008-08-28
申请号：US12035398
申请日：2008-02-21
申请人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
发明人： I-Kang Yu , David Q. Chow , Charles C. Lee , Abraham Chih-Kang Ma , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F13/161 , G06F12/0246 , G06F12/0862 , G06F12/123 , G06F2212/7203 , G11C11/5621 , G11C11/5678 , G11C13/0004 , G11C2211/5641 , G11C2211/5643
摘要： High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.
摘要翻译：描述了高耐久性非易失性存储器件（NVMD）。高耐久性NVMD包括I / O接口，NVM控制器，CPU以及易失性存储器子系统和至少一个非易失性存储器（NVM）模块。易失性存储器缓存子系统被配置为数据高速缓存子系统。当NVMD适用于主机系统时，至少一个NVM模块被配置为数据存储器。 I / O接口被配置为从主机接收数据缓存子系统的传入数据，并将请求数据从数据缓存子系统发送到主机。至少一个NVM模块可以包括至少第一和第二类型的NVM。第一种类型包括SLC闪存，而第二种类型的MLC闪存。 NVM的第一种类型被配置为数据高速缓存子系统和第二类NVM之间的缓冲区。

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