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1. 发明专利

JP2006261689A Extremely narrow band two-chamber type high-repetition rate gas discharging laser system 审中-公开
标题翻译：极致窄带双层高速重启速率排气激光系统
公开(公告)号：JP2006261689A
公开(公告)日：2006-09-28
申请号：JP2006129553
申请日：2006-05-08
申请人： Cymer Inc , サイマー, インコーポレイテッドCymer, Inc.
发明人： MYERS DAVID W , BESAUCELE HERVE A , ERSHOV ALEXANDER I , PARTLO WILLIAM N , SANDSTROM RICHARD L , DAS PALASH P , ANDERSON STUART L , FOMENKOV IGOR V , UJAZDOWSKI RICHARD C , PAN XIAOJIANG J , ONKELS ECKEHARD D , NESS RICHARD M , BROWN DANIEL J W
IPC分类号： H01S3/03 , G01J9/00 , G03F7/20 , H01S3/00 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/08 , H01S3/0943 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/102 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/11 , H01S3/13 , H01S3/131 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/223 , H01S3/225 , H01S3/23
CPC分类号： H01S3/2366 , G01J9/00 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333
摘要： PROBLEM TO BE SOLVED: To generate high quality pulsed laser beams at a pulse rate of about 4,000 Hz or greater and at a pulse energy of about 5 mJ or greater. SOLUTION: Two individual discharge chambers are provided and one of which is a part of a master oscillator producing a very narrow-band seed beam which is amplified in the second discharge chamber. The chambers can be controlled individually permitting individual optimization of wavelength parameters in the master oscillator and the optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system is configured as a MOPA (Master Oscillator Power Amplifier) and specifically designed for use as a light source for integrated-circuit pattern lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing a sufficient gas flow to permit operation at a pulse rate of 4,000 Hz or greater by clearing debris from a discharging region in a time shorter than approximately 0.25 milliseconds between pulses. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。解决方案：提供两个单独的放电室，其中一个是主振荡器的一部分，产生在第二放电室中放大的非常窄带子光束。可以单独控制室，允许主振荡器中的波长参数的单独优化和放大室中脉冲能量参数的优化。 ArF准分子激光器系统中的优选实施例被配置为MOPA（主振荡器功率放大器），并被专门设计为用作集成电路图案光刻的光源。在优选的MOPA实施例中，每个腔室包括单个切向风扇，其通过在短于脉冲之间的大约0.25毫秒的时间内从放电区域清除碎屑，从而提供足够的气流以允许以4,000Hz或更高的脉冲速率运行。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2002026435A LASER WAVELENGTH CONTROLLER USING PIEZOELECTRIC DRIVER 失效
公开(公告)号：JP2002026435A
公开(公告)日：2002-01-25
申请号：JP2001185211
申请日：2001-06-19
申请人： CYMER INC
发明人： SPANGLER RONALD L , JACQUES ROBERT N , EVERAGE GEORGE J , ANDERSON STUART L , PALENSCHAT FREDERICK A , FOMENKOV IGOR V , SANDSTROM RICHARD L , PARTLO WILLIAM N , ALGOTS JOHN M , BROWN DANIEL J W
IPC分类号： H01S3/137 , G03F7/20 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/11 , H01S3/13 , H01S3/131 , H01S3/134 , H01S3/22 , H01S3/225
摘要： PROBLEM TO BE SOLVED: To provide a discharge laser provided with a high-speed wavelength correcting device composed of at least one piezoelectric drive, a high-speed wavelength measuring system, a high-speed feedback responding system, a relatively gentle stepper motor, and a high-speed piezoelectric driver for laser wavelength adjustment using a tuning mirror. SOLUTION: The discharge laser is provided with the high-speed wavelength correcting device containing at least one piezoelectric drive, the high-speed wavelength measuring system, and the high-speed feedback responding system. In a desirable embodiment, a device which controls laser wavelength in a low- speed temporal framework of several milliseconds, an intermediate temporal framework of about 1-3 milliseconds, and a very high-speed temporal framework of several microseconds is prepared. The used technology includes the combination of the relatively gentle stepper motor and the high-speed piezoelectric driver for laser wavelength adjustment using the tuning mirror. A preferable control technology is explained (by using very high-speed wavelength monitoring device) and, in order to bring about low-, medium-, and very high-speed (several microseconds) wavelength control, a piezoelectric load cell combined with the piezoelectric driver is provided.

3. 发明专利

JP2008294477A Super narrow band, two-chamber, high repetition rate gas discharge laser system 审中-公开
标题翻译：超级窄带，双室，高重复率排气激光系统
公开(公告)号：JP2008294477A
公开(公告)日：2008-12-04
申请号：JP2008215610
申请日：2008-08-25
申请人： Cymer Inc , サイマーインコーポレイテッド
发明人： KNOWLES DAVID S , BROWN DANIEL J W , BESAUCELE HERVE A , MYERS DAVID W , ERSHOV ALEXANDER I , PARTLO WILLIAM N , SANDSTROM RICHARD L , DAS PLASH P , ANDERSON STUART L , FOMENKOV IGOR V , UJAZDOWSKI RICHARD C , ONKELS ECKEHARD D , NESS RICHARD M , SMITH SCOTT T , HULBURD WILLIAM G , OICLES JEFFREY
IPC分类号： H01S3/225 , H01L21/027 , H01S3/00 , H01S3/034 , H01S3/036 , H01S3/038 , H01S3/134 , H01S3/23
CPC分类号： G03F7/7055 , H01S3/0057 , H01S3/036 , H01S3/0385 , H01S3/134 , H01S3/225 , H01S3/2251 , H01S3/2258
摘要： PROBLEM TO BE SOLVED: To provide a seed light injection module gas discharge laser system capable of generating a high quality-pulse laser beam with about 4,000 Hz of pulse repetition rate or more and a pulse energy of about 5 mJ or more. SOLUTION: The system is provided with two separate discharge chambers, and one is a part of a master oscillator that generates a super narrow band seed beam amplified in a second discharge chamber. The two discharge chambers can be separately controlled, and enable the system to optimize a wavelength parameter in the master oscillator and a pulse energy parameter in an amplifying chamber. A preferable embodiment of an ArF excimer laser system is configured as a MOPA, and is particularly designed to be used as a light source of an integrated circuit lithography. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种种子光注入模块气体放电激光系统，其能够产生具有大约4,000Hz的脉冲重复率或更大的脉冲能量和大约5mJ以上的脉冲能量的高质量脉冲激光束。解决方案：该系统设置有两个分开的放电室，一个是主振荡器的一部分，其产生在第二放电室中放大的超窄带种子光束。两个放电室可以单独控制，并且使系统能够优化主振荡器中的波长参数和放大室中的脉冲能量参数。 ArF准分子激光器系统的优选实施例被配置为MOPA，并且被特别设计为用作集成电路光刻的光源。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2011176358A Laser system 有权
标题翻译：激光系统
公开(公告)号：JP2011176358A
公开(公告)日：2011-09-08
申请号：JP2011106816
申请日：2011-05-12
申请人： Cymer Inc , サイマーインコーポレイテッド
发明人： ERSHOV ALEXANDER I , PARTLO WILLIAM N , BROWN DANIEL J W , FOMENKOV IGOR V , BERGSTEDT ROBERT A , SANDSTROM RICHARD L , LALOVIC IVAN
IPC分类号： H01S3/23 , H01S3/225
CPC分类号： H01S3/225 , G03F7/70583 , H01S3/005 , H01S3/0057 , H01S3/03 , H01S3/034 , H01S3/08036 , H01S3/08059 , H01S3/10092 , H01S3/105 , H01S3/2251 , H01S3/2333
摘要： PROBLEM TO BE SOLVED: To provide a high electric power gas discharge laser system for a DUV light source. SOLUTION: A method and apparatus may include a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may include a seed laser oscillator producing an output including a pulsed laser output light beam and which may include a first gas discharge excimer or a molecular fluorine laser chamber and a line narrowing module within a first oscillator cavity; and a laser amplification stage which contains an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output including a pulsed laser output light beam, and which may include a ring power amplification stage wherein the output of the seed laser oscillator passes through the amplifying gain medium of the ring power amplification stage at least two times per loop. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为DUV光源提供高功率气体放电激光系统。解决方案：方法和装置可以包括线变窄的脉冲准分子或分子氟气体放电激光系统，其可以包括产生包括脉冲激光输出光束的输出的种子激光振荡器，并且可以包括第一气体放电准分子或分子氟激光室和第一振荡器腔内的线窄模块; 以及激光放大级，其在第二气体放电准分子或分子氟激光室中含有放大增益介质，其接收种子激光振荡器的输出并放大种子激光振荡器的输出，以形成包括脉冲激光输出的激光系统输出光束，并且其可以包括环形功率放大级，其中种子激光振荡器的输出通过环形功率放大级的放大增益介质每循环至少两次。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2008085364A Super narrow band two-chamber type high repetition rate gas discharge laser system 有权
标题翻译：超级窄带双层式高重复率气体放电激光系统
公开(公告)号：JP2008085364A
公开(公告)日：2008-04-10
申请号：JP2007310433
申请日：2007-11-30
申请人： Cymer Inc , サイマーインコーポレイテッド
发明人： KNOWLES DAVID S , BROWN DANIEL J W , BESAUCELE HERVE A , MYERS DAVID W , ERSHOV ALEXANDER I , PARTLO WILLIAM N , SANDSTROM RICHARD L , DAS PLASH P , ANDERSON STUART L , FOMENKOV IGOR V , UJAZDOWSKI RICHARD C , ONKELS ECKEHARD D , NESS RICHARD M , SMITH SCOTT T , HULBURD WILLIAM G , OICLES JEFFREY
IPC分类号： H01S1/00 , H01S3/0943 , G01J1/42 , G01J9/00 , G03F7/20 , H01L21/027 , H01S3/00 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/08 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/102 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/11 , H01S3/13 , H01S3/131 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/223 , H01S3/225 , H01S3/23
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： PROBLEM TO BE SOLVED: To provide a seeded light injection module gas discharge laser system capable of generating a high quality-pulse laser beam with about 4,000 Hz of pulse repetition rate or more and pulse energy of about 5 mJ or more. SOLUTION: The system is provided with two separate discharge chambers, and one is a part of a master oscillator that generates a super narrow band seeded beam amplified in a second discharge chamber. The two discharge chambers can be separately controlled, and enable the system to optimize a wavelength parameter in the master oscillator and a pulse energy parameter in an amplifying chamber. An ArF excimer laser system is configured as a MOPA, and is particularly designed to be used as a light source of an integrated circuit lithography. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够产生大约4000Hz的脉冲重复率或更大的脉冲能量约5mJ或更大的高质量脉冲激光束的种子光注入模块气体放电激光系统。解决方案：该系统设有两个独立的放电室，一个是主振荡器的一部分，其产生在第二放电室中放大的超窄带种子光束。两个放电室可以单独控制，并且使系统能够优化主振荡器中的波长参数和放大室中的脉冲能量参数。 ArF准分子激光器系统被配置为MOPA，并且被特别设计为用作集成电路光刻的光源。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2002198604A SUPERNARROW BAND, TWO CHAMBER, HIGH REP RATE GAS DISCHARGE LASER SYSTEM 审中-公开
公开(公告)号：JP2002198604A
公开(公告)日：2002-07-12
申请号：JP2001311982
申请日：2001-10-09
申请人： CYMER INC
发明人： MYERS DAVID W , BESAUCELE HERVE A , ERSHOV ALEXANDER I , PARTLO WILLIAM N , SANDSTROM RICHARD L , DAS PALASH P , ANDERSON STUART L , FOMENKOV IGOR V , UJAZDOWSKI RICHARD C , PAN XIAOJIANG J , ONKELS ECKEHARD D , NESS RICHARD M , BROWN DANIEL J W
IPC分类号： G01J9/00 , G03F7/20 , H01S3/00 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/08 , H01S3/0943 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/102 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/11 , H01S3/13 , H01S3/131 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/223 , H01S3/225 , H01S3/23
摘要： PROBLEM TO BE SOLVED: To generate a high-quality pulse laser beam by a pulse speed of approximately 4,000 Hz or more, and a pulse energy of approximately 5 mJ or more. SOLUTION: Two discharge chambers are provided. One is a portion of a main oscillator for generating a supernarrow band seed beam, and the seed beam is amplified in a second discharge chamber. The discharge chambers can be independently controlled so that individual optimization in a wavelength parameter of the main oscillator, and optimization in the pulse energy parameter of an amplification chamber can be made. A preferred embodiment is an ArF excimer laser system that is composed as an MOPA, and is specially designed for a light source for integrated-circuit lithography. In an MOPA embodiment, each chamber has a single tangential fan for generating gas flow that can be operated by a pulse speed of 4,000 Hz or more by removing a residue from a discharge region at time that is less than approximately 0.25 mm between pulses.

7. 发明专利

CA2458619A1 LINE SELECTED F2 TWO CHAMBER LASER SYSTEM 未知
公开(公告)号：CA2458619A1
公开(公告)日：2003-03-13
申请号：CA2458619
申请日：2002-08-19
申请人： CYMER INC
发明人： SMITH SCOT T , ONKELS ECKEHARD D , MYERS DAVID W , ERSHOV ALEXANDER I , BESAUCELE HERVE A , UJAZDOWSKI RICHARD C , FOMENKOV IGOR V , PARTLO WILLIAM N , HULBURD WILLIAM G , RYLOV GERMAN E , KNOWLES DAVID S , SANDSTROM RICHARD L , NESS RICHARD M , BROWN DANIEL J W
IPC分类号： H01L21/027 , G01J9/00 , G03F7/20 , H01S3/00 , H01S3/03 , H01S3/034 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/08 , H01S3/0943 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/102 , H01S3/104 , H01S3/105 , H01S3/11 , H01S3/13 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/223 , H01S3/225 , H01S3/23
摘要： An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz o r greater and at pulse energies of about 5 mJ or greater. Two separate dischar ge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the secon d discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferr ed embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a sing le tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge regi on in less time than the approximately 0.25 milliseconds between pulses. The masters oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength an a pulse t o pulse basis at repetition rates of 4,000 Hz or greater to precision of less that 0.2 pm.

8. 发明专利

AU9633401A Very narrow band, two chamber, high rep rate gas discharge laser system 未知
公开(公告)号：AU9633401A
公开(公告)日：2002-04-22
申请号：AU9633401
申请日：2001-09-25
申请人： CYMER INC
发明人： MYERS DAVID W , BESAUCELE HERVE A , ERSHOV ALEXANDER I , PARTLO WILLIAM N , SANDSTROM RICHARD L , DAS PALASH P , ANDERSON STUART L , FOMENKOV IGOR V , UJAZDOWSKI RICHARD C , PAN XIAOJIANG J , ONKELS ECKEHARD D , NESS RICHARD M , BROWN DANIEL J W
IPC分类号： G01J9/00 , G03F7/20 , H01S3/00 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/08 , H01S3/0943 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/102 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/11 , H01S3/13 , H01S3/131 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/223 , H01S3/225 , H01S3/23 , H01S3/10
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

9. 发明专利

AT421788T 未知
公开(公告)号：AT421788T
公开(公告)日：2009-02-15
申请号：AT04011567
申请日：2002-08-19
申请人： CYMER INC
发明人： KNOWLES DAVID S , BROWN DANIEL J W , SANDSTROM RICHARD , RYLOV GERMAN E , ONKELS ECKEHARD , BESAUCELE HERVE A , MYERS DAVID , ERSHOV ALEXANDER , PARTLO WILLIAM N , FOMENKOV IGOR , UJAZDOWSKI RICHARD , NESS RICHARD , SMITH SCOT , HULBURD WILLIAM
IPC分类号： H01S3/225 , H01S3/00 , H01S3/036 , H01S3/038 , H01S3/134 , H01S3/23
摘要： A gas discharge laser with a pulse multiplier. In the pulse multiplier, short pulses from the laser are divided into portions and all or all but one of these portions are delayed in delay legs by different time periods and recombined to provide a stretched output pulse having substantially reduced intensity and longer duration as compared to the pulse from the laser. Focusing optics are included in each delay leg to assure that beam size and angular spread of each portion of the combined pulse is not substantially different from other portions of the pulse.

10. 发明专利

AU2002336374A1 Line selected f?2? two chamber laser system 未知
公开(公告)号：AU2002336374A1
公开(公告)日：2003-03-18
申请号：AU2002336374
申请日：2002-08-19
申请人： CYMER INC
发明人： SMITH SCOT T , BROWN DANIEL J W , NESS RICHARD M , MYERS DAVID W , ERSHOV ALEXANDER I , HULBURD WILLIAM G , KNOWLES DAVID S , BESAUCELE HERVE A , PARTLO WILLIAM N , ONKELS ECKEHARD D , FOMENKOV IGOR V , RYLOV GERMAN E , SANDSTROM RICHARD L , UJAZDOWSKI RICHARD C
IPC分类号： H01L21/027 , G01J9/00 , G03F7/20 , H01S3/00 , H01S3/03 , H01S3/034 , H01S3/036 , H01S3/038 , H01S3/04 , H01S3/041 , H01S3/08 , H01S3/0943 , H01S3/097 , H01S3/0971 , H01S3/0975 , H01S3/102 , H01S3/104 , H01S3/105 , H01S3/11 , H01S3/13 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/223 , H01S3/225 , H01S3/23
摘要： A very narrow band two chamber high repetition rate F 2 gas discharge laser system comprising. A) a first laser unit comprising: 1) a first discharge chamber containing; a) a first laser gas b) a first pair of elongated spaced apart electrodes defining a first discharge region, 2) a first fan producing sufficient gas movement of said first laser gas in said first discharge region to clear from said first discharge region, following each gas discharge, substantially all discharge produced ions prior to a next gas discharge when operating at a repetition rate in the range of 4,000 gas discharges per second or greater, 3) a first heat exchanger system removing heat energy from said first laser gas, B) a line selection unit minimizing energy outside of a single selected line spectrum, C) a second laser unit comprising: 1) a second discharge chamber containing: a) a second laser gas, b) a second pair of elongated spaced apart electrodes defining a second discharge region 2) a second fan for producing sufficient gas movement of said second laser gas in said second discharge region to clear from said second discharge region, following each gas discharge, substantially all discharge produced ions prior to a next gas discharge when operating at a repetition rate in the range of 4,000 gas discharges per second or greater, 3) a second heat exchanger system removing heat energy from said second laser gas, D) a pulse power system configured to provide electrical pulses to said first pair of electrodes and to said second pair of electrodes sufficient to produce laser output pulses at rates of about 4,000 laser output pulses per second with precisely controlled laser output pulse energies in excess of about 5 mJ, E) a laser beam measurement and control system for measuring the laser output pulse energy of laser output pulses produced by said two chamber laser system and controlling said laser output pulses in a feedback control arrangement, and wherein output laser beams from said first laser unit are utilized as a seed beam for seeding said second laser unit.

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