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1. 发明授权

US11874551B2 Display panel and manufacture method thereof, display apparatus 有权
公开(公告)号：US11874551B2
公开(公告)日：2024-01-16
申请号：US17281675
申请日：2020-09-29
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Guangcai Yuan , Haixu Li
IPC分类号： G02F1/1335 , G02F1/13357
CPC分类号： G02F1/133536 , G02F1/133516 , G02F1/133531 , G02F1/133548 , G02F1/133602
摘要： A display panel and a manufacture method thereof, and a display apparatus are provided. A display liquid crystal panel and a light control panel that are stacked. The display liquid crystal panel includes a first substrate and a second substrate that are opposite to each other; the light control panel includes a third substrate and a fourth substrate that are opposite to each other. The second substrate and the third substrate are between the first substrate and the fourth substrate. The first polarizer is between the second polarizer and the third polarizer. The first polarizer, the second polarizer, and the third polarizer are configured to allow backlight to emit out of the fourth substrate after passing through the second polarizer, the first polarizer, and the third polarizer in sequence.

2. 发明授权

US11817307B2 Display substrate and method for manufacturing the same 有权
公开(公告)号：US11817307B2
公开(公告)日：2023-11-14
申请号：US16766735
申请日：2019-07-24
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Guangcai Yuan , Zhijun Lv , Haixu Li , Xiaoxin Song , Feng Zhang , Wenqu Liu , Liwen Dong , Zhao Cui , Libo Wang , Detian Meng
IPC分类号： H01L33/00 , H01L33/38 , H01L33/58 , H01L33/62 , H01L23/00
CPC分类号： H01L33/38 , H01L24/14 , H01L24/17 , H01L24/81 , H01L33/005 , H01L33/58 , H01L33/62 , H01L2933/0016
摘要： The present disclosure relates to a display substrate and a method for manufacturing the same. The display substrate includes: a substrate; a first electrode located on the substrate; and a conductive convex located on the first electrode. A dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode.

3. 发明授权

US11341901B2 Driving backplane, display panel and display device 有权
公开(公告)号：US11341901B2
公开(公告)日：2022-05-24
申请号：US16899620
申请日：2020-06-12
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Haixu Li
IPC分类号： G09G3/32 , H01L33/38 , H01L33/62
摘要： The present disclosure provides a driving backplane, including: a base substrate, a driving circuit arranged on the base substrate, an insulation layer on a side of the driving circuit facing away from the base substrate, a plurality of first tip structures arranged on a side of the insulation layer facing away from the base substrate, and a plurality of contact electrodes arranged on the side of the insulation layer facing away from the base substrate. The driving circuit includes a plurality of output terminals, the insulation layer includes a plurality of openings and the output terminals and the openings are in a one-to-one correspondence. The contact electrodes are electrically connected with the output terminals through the openings. Each of the contact electrodes covers the plurality of first tip structures to constitute a plurality of second tip structures having the same appearance as the first tip structures.

4. 发明授权

US11177293B2 Array substrate and fabricating method thereof, and display device 有权
公开(公告)号：US11177293B2
公开(公告)日：2021-11-16
申请号：US16621773
申请日：2018-12-14
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Haixu Li , Jianguo Wang
IPC分类号： H01L27/14 , H01L27/12 , H01L29/786
摘要： A fabricating method of an array substrate includes: forming a first semiconductor pattern and a first insulating layer on a substrate; forming a first gate pattern and a second gate pattern isolated from each other; forming a second insulating layer; forming a second semiconductor pattern; forming a first metal pattern and a second metal pattern and a third metal pattern respectively lap-jointed with the second semiconductor pattern; forming a third insulating layer; and forming a first via hole, a second via hole, first source and drain electrodes, and second source and drain electrodes, where the first source and drain electrode are respectively connected to the first semiconductor pattern through the first via hole, and the second source and drain electrodes are respectively connected to the second semiconductor pattern through the second via hole.

5. 发明授权

US11177134B2 Conductive pattern and method for manufacturing the same, thin film transistor, display substrate, and display device 有权
公开(公告)号：US11177134B2
公开(公告)日：2021-11-16
申请号：US16424694
申请日：2019-05-29
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jianguo Wang , Zhanfeng Cao , Haixu Li
IPC分类号： H01L21/285 , C23C14/18 , H01L23/00 , H01L27/12 , H01L29/45 , H01L29/49 , C23C14/04 , C23C14/02 , H01L29/40 , C23C14/58 , H01L21/3213 , H01L21/768 , H01L23/49 , H01L23/532 , H01L29/423
摘要： A conductive pattern and a method for manufacturing the same, a thin film transistor, a display substrate and a display device are provided. The method includes: step A, forming a metal layer on a base substrate; step B, forming a first conductive buffer layer on the metal layer; step C, patterning the metal layer and the first conductive buffer layer to form a conductive sub-pattern; and performing steps A to C repeatedly for N times to form N conductive sub-patterns that are stacked on the base substrate. The conductive pattern comprises the N conductive sub-patterns, and N is a positive integer greater than 1.

6. 发明授权

US11139321B2 Drive backplane, display panel, electronic apparatus, and method for preparing drive backplane 有权
公开(公告)号：US11139321B2
公开(公告)日：2021-10-05
申请号：US16651400
申请日：2019-09-17
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Haixu Li
IPC分类号： H01L27/14 , H01L27/12 , H01L25/075 , H01L33/62
摘要： A drive backplane, a display panel, an electronic apparatus, and a method for preparing a drive backplane are provided in embodiments of the disclosure, all relating to the technical field of display technology, the drive backplane including: a base substrate; a driving device layer on the base substrate, comprising an electrode layer; a planarization layer, on a surface of the driving device layer facing away from the base substrate, and the planarization layer being provided with at least one projection portion and at least one base portion adjacent to the at least one projection portion both on a surface of the planarization layer facing away from the driving device layer, each projection portion having a greater thickness than that of each base portion; a conductive layer, on respective surface of each projection portion facing away from the driving device layer, the conductive layer being connected with the electrode layer of the driving device layer; a spacer layer, on a surface of the conductive layer facing away from the planarization layer; and a binding layer, covering both a surface of the spacer layer facing away from the conductive layer and the surface of the conductive layer facing away from the planarization layer, the binding layer being where a light-emitting device is to be provided.

7. 发明授权

US10916565B2 LTPS substrate and fabricating method thereof, thin film transistor thereof, array substrate thereof and display device thereof 有权
公开(公告)号：US10916565B2
公开(公告)日：2021-02-09
申请号：US16330922
申请日：2018-05-15
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Haixu Li , Zhanfeng Cao , Qi Yao , Dapeng Xue , Da Lu
IPC分类号： H01L21/00 , H01L27/12 , H01L29/786 , H01L29/66
摘要： The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

8. 发明授权

US10580804B2 Array substrate, fabricating method therefor and display device 有权
公开(公告)号：US10580804B2
公开(公告)日：2020-03-03
申请号：US15968835
申请日：2018-05-02
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Haixu Li , Zhanfeng Cao , Qi Yao
IPC分类号： H01L27/12 , H01L29/786
摘要： The present disclosure provides an array substrate, a fabricating method thereof, and a display device. The array substrate includes a base substrate which has a first region and a second region respectively provided with a first transistor and a second transistor. The first transistor has a first active layer of low-temperature polysilicon, and the second transistor has a second active layer of metal oxide semiconductor. The first active layer, an interlayer dielectric layer and the second active layer are sequentially disposed on the base substrate, and a barrier layer is disposed between the interlayer dielectric layer and the second active layer.

9. 发明授权

US10263092B2 Thin film transistor, method for manufacturing the same, array substrate and display device 有权
公开(公告)号：US10263092B2
公开(公告)日：2019-04-16
申请号：US15941195
申请日：2018-03-30
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Haixu Li , Zhanfeng Cao , Qi Yao , Jianguo Wang , Dapeng Xue
IPC分类号： H01L29/49 , H01L29/45 , H01L29/66 , H01L29/786 , H01L27/12
摘要： A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate having a gate metal layer on a surface of a substrate; a gate insulating layer on the substrate and covering the gate; an active layer on a surface of the gate insulating layer away from the substrate; a source comprising a source metal layer on a surface of the active layer away from the substrate; and a drain having a drain metal layer on a surface of the active layer away from the substrate, wherein the gate, the source or the drain further includes a metal complex layer on a surface of the gate metal layer, the source metal layer or the drain metal layer away from the substrate.

10. 发明公开

US20240258279A1 OPTICAL PATH STRUCTURE, OPTICAL PATH SYSTEM, AND TRANSFER METHOD 审中-公开
公开(公告)号：US20240258279A1
公开(公告)日：2024-08-01
申请号：US18016589
申请日：2022-02-28
申请人： BOE Technology Group Co., Ltd.
发明人： Xue Dong , Guangcai Yuan , Xin Gu , Junwei Yan , Fei Wang , Xiao Zhang , Haixu Li , Xuan Liang , Chengfei Wang , Mingxing Wang , Shulei Li , Xiaolei Zhang , Xinxin Zhao
IPC分类号： H01L25/075 , H01L21/68 , H01L33/00
CPC分类号： H01L25/0753 , H01L21/681 , H01L33/0093
摘要： An optical path structure, an optical path system, and a transfer method. The optical path structure includes a beam adjustment module configured to adjust a diameter of a laser beam and output a first beam; a beam shaping module configured to perform energy homogenization on the first beam to obtain a second beam; and a beam focusing module configured to focus the second beam and output a target light spot; the target light spot is used for irradiating a device substrate, so that a bonding material in the device substrate changes after being irradiated by the target light spot, and a target device is separated from a carrier substrate; where the bonding material is disposed between the target device and the carrier substrate.

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