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    • 1. 发明授权
    • Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information
    • 通过保证冗余信息的健康来提高半导体器件产量的方法和装置
    • US07545689B2
    • 2009-06-09
    • US11894861
    • 2007-08-21
    • Alper IlkbaharDerek J. Bosch
    • Alper IlkbaharDerek J. Bosch
    • G11C7/00
    • G11C29/76
    • A method is provided comprising reading a set of memory cells indicating whether stored redundancy information is reliable and, if the set of memory cells indicates that the stored redundancy information is reliable, determining whether to read primary memory or redundant memory based on the stored redundancy information. Another method is provided comprising reading a set of memory cells associated with a group of memory cells in a primary memory, the set of memory cells indicating whether data can be reliably stored in the group of memory cells; if the set of memory cells indicates that data can be reliably stored in the group of memory cells, storing data in the group of memory cells; and if the set of memory cells does not indicate that data can be reliably stored in the group of memory cells, storing data in a group of memory cells in a redundant memory. In another preferred embodiment, a method for providing memory redundancy is provided.
    • 提供了一种方法,其包括:读取一组存储器单元,指示存储的冗余信息是否可靠;以及如果存储单元组指示所存储的冗余信息是可靠的,则基于所存储的冗余信息确定是否读取主存储器还是冗余存储器 。 提供了另一种方法,包括读取与主存储器中的一组存储器单元相关联的一组存储器单元,该组存储器单元指示数据是否可以可靠地存储在存储器单元组中; 如果存储器单元组指示数据可以可靠地存储在存储器单元组中,则将数据存储在存储单元组中; 并且如果存储器单元组不指示数据可以可靠地存储在存储器单元组中,则将数据存储在冗余存储器中的一组存储器单元中。 在另一个优选实施例中,提供了一种用于提供存储器冗余的方法。
    • 4. 发明授权
    • Memory device and method for storing bits in non-adjacent storage locations in a memory array
    • 用于存储存储器阵列中非相邻存储位置中的位的存储器件和方法
    • US06928590B2
    • 2005-08-09
    • US10024647
    • 2001-12-14
    • Alper IlkbaharRoy E. ScheuerleinDerek J. Bosch
    • Alper IlkbaharRoy E. ScheuerleinDerek J. Bosch
    • G06F11/00G06F11/10H04B1/74
    • G06F11/1028
    • The preferred embodiments described herein provide a memory device and method for storing bits in non-adjacent storage locations in a memory array. In one preferred embodiment, a memory device is provided comprising a register and a memory array. A plurality of bits provided to the memory device are stored in the register in a first direction, read from the register in a second direction, and then stored in the memory array. Bits that are adjacent to one another when provided to the memory device are stored in non-adjacent storage locations in the memory array. When the plurality of bits takes the form of an ECC word, the storage of bits in non-adjacent storage locations in the memory array reduces the likelihood of an uncorrectable multi-bit error. In another preferred embodiment, a memory device is provided comprising a memory array and a register comprising a first set of wordlines and bitlines and a second set of wordlines and bitlines arranged orthogonal to the first set. In yet another preferred embodiment, memory decoders or a host device is used to store bits in non-adjacent storage locations in a memory array of a memory device. Other preferred embodiments are provided, and each of the preferred embodiments described herein can be used alone or in combination with one another.
    • 本文描述的优选实施例提供了一种用于存储位于存储器阵列中的非相邻存储位置中的位的存储器件和方法。 在一个优选实施例中,提供了包括寄存器和存储器阵列的存储器件。 提供给存储器件的多个位以第一方向存储在寄存器中,从第二方向从寄存器读取,然后存储在存储器阵列中。 当提供给存储器件时彼此相邻的位被存储在存储器阵列中的非相邻存储位置中。 当多个位采用ECC字的形式时,存储器阵列中非相邻存储位置中的位的存储减少了不可校正的多位错误的可能性。 在另一个优选实施例中,提供了存储器件,其包括存储器阵列和包括第一组字线和位线的寄存器以及与第一组正交布置的第二组字线和位线。 在另一优选实施例中,存储器解码器或主机设备用于存储存储器件的存储器阵列中的非相邻存储位置中的位。 提供了其它优选实施方案,并且本文所述的各优选实施方案可以单独使用或彼此组合使用。
    • 9. 发明授权
    • Memory device for repairing a neighborhood of rows in a memory array using a patch table
    • 使用补丁表修复存储器阵列中行的邻域的存储器件
    • US07958390B2
    • 2011-06-07
    • US11803756
    • 2007-05-15
    • Derek J. BoschChristopher S. Moore
    • Derek J. BoschChristopher S. Moore
    • G06F11/00
    • G11C29/765
    • A memory device for repairing a neighborhood of rows in a memory array using a patch table is disclosed. In one embodiment, circuitry in the memory device is operative to store, in a temporary storage area of the memory device, (i) first data to be stored in row N in the memory array, (ii) second data, if any, stored in row N−1 in the memory array, and (iii) third data, if any, stored in row N+1 in the memory array. The circuitry is operative to write the first data in row N in the memory array, and, in response to an error in writing the first data, to write the first data, the second data, if any, and the third data, if any, in respective rows in a repair area in the memory device. The circuitry is further operative to add the addresses of rows N−1, N, and N+1 to a table stored in the memory device.
    • 公开了一种用于使用补丁表修复存储器阵列中的行的邻域的存储器件。 在一个实施例中,存储器装置中的电路可操作以在存储器件的临时存储区域中存储(i)存储在存储器阵列中的行N中的第一数据,(ii)存储的第二数据 在存储器阵列中的行N-1中,以及(iii)存储在存储器阵列中的行N + 1中的第三数据(如果有的话)。 电路可操作地将存储器阵列中的行N中的第一数据写入,并且响应于写入第一数据的错误,写入第一数据,第二数据(如果有的话)和第三数据(如果有的话) 在存储器件中的修复区域中的各行中。 该电路进一步可操作以将行N-1,N和N + 1的地址添加到存储在存储装置中的表。
    • 10. 发明申请
    • Method for repairing a neighborhood of rows in a memory array using a patch table
    • 使用补丁表修复存储器阵列中的行邻域的方法
    • US20080288813A1
    • 2008-11-20
    • US11803776
    • 2007-05-15
    • Derek J. BoschChristopher S. Moore
    • Derek J. BoschChristopher S. Moore
    • G06F11/00
    • G11C29/804
    • A method for repairing a neighborhood of rows in a memory array using a patch table is disclosed. First data to be stored in row N in a memory array of the memory device, second data, if any, stored in row N-1 in the memory array, and third data, if any, stored in row N+1 in the memory array are stored in a temporary storage area of a memory device. The first data is written in row N, and, in response to an error, the first data, the second data, if any, and the third data, if any, are written in respective rows in a repair area in the memory device. The addresses of rows N-1, N, and N+1 are added to a table stored in the memory device to indicate which rows in the repair area should be used instead of rows N-1, N, and N+1.
    • 公开了一种使用补丁表修复存储器阵列中的行的邻域的方法。 要存储在存储器装置的存储器阵列中的行N中的第一数据,存储在存储器阵列中的行N-1中的第二数据(如果有的话)以及存储在存储器中的行N + 1中的第三数据(如果有的话) 阵列存储在存储器件的临时存储区域中。 第一数据被写入行N,并且响应于错误,将第一数据,第二数据(如果有的话)和第三数据(如果有的话)写入存储器件中的修复区域中的相应行中。 行N-1,N和N + 1的地址被添加到存储在存储装置中的表中,以指示应该使用修复区中的哪些行而不是行N-1,N和N + 1。