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1. 发明授权

KR101054512B1 단일 패키지의 특성 분석을 통한 고출력 발광 다이오드 모듈의 접합 온도 측정 방법 有权
标题翻译：高效光发射二极管单组分性能分析的高效发光二极管模块温度测量方法
公开(公告)号：KR101054512B1
公开(公告)日：2011-08-04
申请号：KR1020100039176
申请日：2010-04-27
申请人： 원광대학교산학협력단
发明人： 양종경 , 이세일 , 신익태 , 박대희
IPC分类号： H01L33/48 , G01R31/26 , H01L21/66
CPC分类号： G01K7/01 , G01R31/2601 , H01L33/0008
摘要： PURPOSE: A method for measuring the junction temperature of high power light emitting diode module with the analysis of single package properties is provided to analyze the temperature(junction temperature) of the average junction part to each light emitting diode by measuring only voltage in a module state and measures the temperature(junction temperature) of a junction part inside the light emitting diode through voltage change according to the change of external temperature in a single light emitting diode package. CONSTITUTION: Relation between external temperature and a voltage at a perception current is identified by measuring voltage with the change of external temperature in a light-emitting diode package including the same light emitting diode as the light emitting diode comprising high power light emitting diode module(S1). The change of voltage is measured in specific external temperature while a driving current and a perception current are consecutively and alternately applied, a driving current is applied for a first time interval, and the perception current is applied for a second time interval(S2). Difference(ΔV) between a minimum value and a maximum value is calculated among these values by separating the values of the voltage in case of applying the perception current among data obtained from S2(S3). A temperature variation value(ΔT/ΔV) about voltage change is obtained from data obtaining from S1(S4). The ΔV obtained from S3 and the ΔT/ΔV obtained from S4 are multiplied and the external temperature is added and then the temperature of the P-N junction in the light emitting diode at the corresponding external temperature is measured(S5).
摘要翻译：目的：提供一种用于测量大功率发光二极管模块的结温的方法，通过分析单个封装特性，通过仅测量模块中的电压来分析平均结部分与每个发光二极管的温度（结温）状态，并且通过根据单个发光二极管封装中的外部温度的变化的电压变化来测量发光二极管内部的接合部分的温度（结温）。构成：通过在包括与包括大功率发光二极管模块的发光二极管相同的发光二极管的发光二极管封装中测量外部温度的变化来测量外部温度与感知电流之间的电压之间的关系， S1）。在驱动电流和感知电流连续交替施加的同时，在特定的外部温度下测量电压的变化，驱动电流以第一时间间隔施加，感应电流施加第二时间间隔（S2）。通过在从S2获得的数据（S3）中分离应用感知电流的情况下的电压值，计算出这些值中的最小值和最大值之间的差（ΔV）。从S1获得的数据获得关于电压变化的温度变化值（ΔT/ΔV）（S4）。将从S3获得的ΔV和从S4获得的ΔT/ΔV相乘并加上外部温度，然后测量在相应外部温度下的发光二极管中的P-N结的温度（S5）。

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