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1. 发明专利

JP4240889B2 A method of forming a transparent conductive film, and a method of manufacturing a photovoltaic device 有权
公开(公告)号：JP4240889B2
公开(公告)日：2009-03-18
申请号：JP2002016616
申请日：2002-01-25
申请人：キヤノン株式会社
发明人：明哉中山 , 直人岡田 , 盛夫木曾 , 裕越前 , 康好高井
IPC分类号： H01L31/04 , H01B13/00
CPC分类号： Y02E10/50

2. 发明专利

JP3461314B2 Substrate processing method and a substrate processing apparatus 有权
公开(公告)号：JP3461314B2
公开(公告)日：2003-10-27
申请号：JP36269299
申请日：1999-12-21
申请人：キヤノン株式会社
发明人：寛嗣下田 , 博和大利 , 裕之尾▲崎▼ , 直人岡田 , 公一朗森山 , 直芳里 , 正博金井
IPC分类号： H01L21/205 , C23C14/54 , C23C14/56 , C23C16/44 , C23C16/52 , H01L31/04
CPC分类号： Y02E10/50

3. 发明专利

JP3754855B2 A substrate processing apparatus and substrate processing method 有权
公开(公告)号：JP3754855B2
公开(公告)日：2006-03-15
申请号：JP2000000267
申请日：2000-01-05
申请人：キヤノン株式会社
发明人：寛嗣下田 , 博和大利 , 裕之尾▲崎▼ , 直人岡田 , 公一朗森山 , 直芳里 , 正博金井
IPC分类号： H01L21/205 , C23C14/56 , C23C16/46 , G03G5/08 , H01L21/203

4. 发明专利

JP4794741B2 Deposited film forming method and the deposited film forming apparatus 有权
公开(公告)号：JP4794741B2
公开(公告)日：2011-10-19
申请号：JP2001067355
申请日：2001-03-09
申请人：キヤノン株式会社
发明人：寛嗣下田 , 裕之尾▲崎▼ , 直人岡田 , 公一朗森山 , 正博金井
IPC分类号： C23C16/52 , H01L31/04
CPC分类号： Y02E10/50

5. 发明专利

JP3624120B2 The method of manufacturing a photovoltaic device, a photovoltaic element manufacturing apparatus 有权
公开(公告)号：JP3624120B2
公开(公告)日：2005-03-02
申请号：JP20420499
申请日：1999-07-19
申请人：キヤノン株式会社
发明人：寛嗣下田 , 博和大利 , 裕之尾崎 , 直人岡田 , 公一朗森山 , 直芳里 , 正博金井
IPC分类号： H01L31/10 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To form a photovoltaic element which can improve the output characteristics of a solar cell, open voltage and fill factor, by providing on a pi boundary face or an ni boundary face a buffer semiconductor layer to prevent the thermal diffusion of dopant of a (p) layer or an (n) layer during film formation. SOLUTION: One assumes that a solar cell 101 is composed of a conductive substrate 102, a lower electrode 103, an n-type semiconductor layer 104, n/i buffer semiconductor layers 105a and 105b, an i-type semiconductor layer 106, p/i buffer semiconductor layers 107a and 107b, a p-type semiconductor layer 108, a transparent electrode 109, a current collecting electrode 110, and an extraction electrode 111, and a light enters via the transparent electrode 109. Therefore, a buffer semiconductor layer is provided on a pi boundary face or an ni boundary face to prevent effectively the thermal diffusion of dopant of a (p) layer or an (n) layer in an (i) layer during film formation, thereby improving the output characteristic of the solar cell, especially the open voltage and fill factor.

6. 发明专利

JP3935237B2 Photoelectric conversion body and building materials 失效
标题翻译：空值
公开(公告)号：JP3935237B2
公开(公告)日：2007-06-20
申请号：JP5607797
申请日：1997-03-11
申请人：キヤノン株式会社
发明人：篤志塩崎 , 博和大利 , 直人岡田 , 恵志斎藤 , 正博金井
IPC分类号： H01L31/04 , H01L31/048 , H01L31/076 , H01L31/20 , H02J7/35
CPC分类号： H02J7/35 , B32B17/04 , B32B17/10788 , H01L31/048 , H01L31/076 , Y02B10/12 , Y02B10/14 , Y02E10/548 , Y02P90/50 , Y10S136/293
摘要： A method of preparing a photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions; wherein the semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other, and a photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate in a state of absence of the surface material, and wherein the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.
摘要翻译：一种制备光电转换元件的方法，该光电转换元件包括衬底，形成在衬底上的由非单晶半导体制成的多个半导体结以及覆盖半导体结的表面材料; 其中半导体结具有彼此不同的各自的吸收光谱和各自的光劣化率彼此不同，并且由劣化率最小的半导体结产生的光电流大于通过最大劣化的半导体结的光电流速率处于不存在表面材料的状态，并且其中所述表面材料在与所述半导体结的吸收光谱的一部分相对应的范围内吸收最小劣化率的光，使得由所述半导体结形成的光电流具有最小劣化率的劣化率变得比通过最大劣化率的半导体结点小。

7. 发明专利

JP3809353B2 Method of manufacturing the Id with the workpiece 有权
公开(公告)号：JP3809353B2
公开(公告)日：2006-08-16
申请号：JP2001234392
申请日：2001-08-02
申请人：キヤノン株式会社
发明人：敏彦三村 , 直人岡田 , 健司高田
IPC分类号： B41J3/407 , G05B19/418 , G06K19/06 , H01L21/00 , H01L31/04
CPC分类号： H01L21/67294
摘要： A processed article is provided with a plurality of IDs having the same information for machine reading but difference to be confirmed visually. The information such as the production lot number which is read from the plurality of IDs by the reading device is the same, but these plurality of IDs are different in external appearance, for example in size or color. By corresponding such difference of the plurality of IDs in the external appearance to the positional information in the processing apparatus for the article, new information can be added to the ID without introducing a new ID printer or a reading device. A prompt measure to a trouble in production is made possible based on the information such as the position of the article. Also the defective processed article can be easily selected, thereby improving the production yield and achieving a cost reduction.

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