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    • 10. 发明申请
    • A DEVICE FOR EPITAXIALLY GROWING OBJECTS BY CVD
    • 通过CVD外延生长物体的装置
    • WO2002078070A1
    • 2002-10-03
    • PCT/SE2002/000560
    • 2002-03-22
    • ABB RESEARCH LIMITEDLIU, YuijingLÖFGREN, PeterHALLIN, ChristerZHOU, Gang
    • LIU, YuijingLÖFGREN, PeterHALLIN, ChristerZHOU, Gang
    • H01L21/205
    • C23C16/45508C23C16/4557C23C16/4584C30B25/105C30B25/12H01L21/67115
    • A device for epitaxially growing objects by Chemical Vapour Deposition on substrates (13) comprises a casing (2) defining a room (5) for receiving a holder (11) carrying a plurality of substrates and adapted to be rotated about a substantially vertical axis as well as means for rotating said holder during the growth. The device has also means (10) for feeding a gas mixture for the growth into said room through an inlet (9) being directed substantially along said vertical axis and means (15) for heating said gas mixture inside said room for decomposition thereof and depositing of articles so formed on the substrate for growing layers thereon in a substantially vertical direction for said growth. The room (5) is delimited by a susceptor having fixed walls (7, 8) of a substantial thickness. The heating means (15) is adapted to heat the susceptor walls for heating said gas mixture substantially through radiation from the hot susceptor walls.
    • 用于通过化学气相沉积在衬底(13)上外延生长物体的装置包括限定用于容纳承载多个衬底的保持器(11)的房间(5)的壳体(2),并且适于围绕基本垂直的轴线旋转, 以及用于在生长期间旋转所述保持器的装置。 装置还具有用于通过基本上沿着垂直轴线引导的入口(9)将用于生长的气体混合物供给到所述房间的装置(10)和用于加热所述室内的气体混合物以进行分解的装置(15) 在衬底上形成的制品在其上沿着​​用于生长的大致垂直方向上生长层。 房间(5)由具有相当厚度的固定壁(7,8)的基座限定。 加热装置(15)适于基本上通过来自热感受器壁的辐射加热基座壁以加热所述气体混合物。