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1. 发明申请

US20120156552A1 BATTERY 有权
标题翻译：电池
公开(公告)号：US20120156552A1
公开(公告)日：2012-06-21
申请号：US13392949
申请日：2010-07-23
申请人： Yasuhito Miyazaki , Takuya Kinoshita , Takaaki Abe , Yoshio Shimoida
发明人： Yasuhito Miyazaki , Takuya Kinoshita , Takaaki Abe , Yoshio Shimoida
IPC分类号： H01M2/02 , H01M2/30
CPC分类号： H01M2/26 , H01M2/22 , H01M2/30 , H01M10/0413 , H01M10/0525 , H01M10/0585
摘要： Disclosed is a battery having an improved life. Specifically disclosed is a battery which comprises an electric power generating element in which one or more unit cell layers are stacked, each being constituted by sequentially laminating or stacking a positive electrode, an electrolyte and a negative electrode; a first collector plate which is provided on the outermost positive electrode surface of the electric power generating element; a second collector plate which is provided on the outermost negative electrode surface of the electric power generating element; a convex or protruding portion provided on the first collector plate and/or the second collector plate with a width that is not less than a half of the width of the end edge of the collector plate; and a terminal which is attached to the convex portion for retrieving electric current from the convex portion.
摘要翻译：公开了具有改善寿命的电池。具体公开了一种电池，其包括其中堆叠一个或多个单元电池层的发电元件，其分别通过顺序层叠或堆叠正电极，电解质和负电极而构成; 设置在所述发电元件的最外侧正极面上的第一集电板; 设置在所述发电元件的最外侧负极面上的第二集电板; 设置在所述第一集电板和/或所述第二集电板上的凸部或突出部的宽度不小于所述集电板的端缘宽度的一半的宽度; 以及附接到凸部以从凸部取回电流的端子。

2. 发明申请

US20120156546A1 RESIN COMPOSITION AND ORGANIC-ELECTROLYTE BATTERY 有权
标题翻译：树脂组合物和有机电解质电池
公开(公告)号：US20120156546A1
公开(公告)日：2012-06-21
申请号：US13325647
申请日：2011-12-14
申请人： Hiroshi Amano , Keiji Ogino , Kenji Hosaka , Ryouichi Senbokuya , Yoshio Shimoida , Hideaki Horie
发明人： Hiroshi Amano , Keiji Ogino , Kenji Hosaka , Ryouichi Senbokuya , Yoshio Shimoida , Hideaki Horie
IPC分类号： H01M2/08 , C08L63/00
CPC分类号： H01M2/06 , C08G59/24 , C08G59/26 , C08G59/4014 , C08G59/4021 , C08G59/50 , C08L63/00 , H01M2/08 , H01M2/30 , H01M4/661 , H01M10/05 , H01M10/052 , H01M10/0585 , C08L2666/22
摘要： Provided is a resin composition superior in the adhesiveness to a metal and having high organic solvent resistance, particularly, a resin composition preferable as a sealant for an organic electrolyte battery, which shows superior adhesiveness to a terminal or a collector made of a highly heat resistant metal such as stainless steel and nickel, does not easily develop degradation even when contacted with an organic electrolytic solution at a high temperature, and does not easily influence an electrolytic solution, and a highly reliable organic electrolyte battery wherein leaching of an electrolytic solution from an electrolyte layer is prevented by the resin composition.A resin composition containing (A) an epoxy resin containing at least (E1) an epoxy resin having an aromatic ring and an alicyclic skeleton and (B) a latent curing agent.
摘要翻译：提供一种与金属的粘合性优异且耐溶剂性高的树脂组合物，特别是优选作为有机电解质电池用密封剂的树脂组合物，该组合物对由耐高温性构成的端子或集电体表现出优异的粘附性金属如不锈钢和镍，即使在高温下与有机电解质接触时也不容易发生降解，并且不容易影响电解液，以及高可靠性的有机电解质电池，其中电解溶液从通过树脂组合物防止电解质层。一种树脂组合物，其含有（A）至少含有（E1）具有芳香环和脂环骨架的环氧树脂的环氧树脂和（B）潜伏性固化剂。

3. 发明授权

US08148010B2 Bipolar battery and battery assembly 有权
标题翻译：双极电池和电池组件
公开(公告)号：US08148010B2
公开(公告)日：2012-04-03
申请号：US11946177
申请日：2007-11-28
申请人： Kenji Hosaka , Hideaki Horie , Hajime Satou , Yoshio Shimoida , Teruo Segawa , Gen Takayama , Ohtani Yoshihiko
发明人： Kenji Hosaka , Hideaki Horie , Hajime Satou , Yoshio Shimoida , Teruo Segawa , Gen Takayama , Ohtani Yoshihiko
IPC分类号： H01M6/48 , H01M2/00
CPC分类号： H01M10/0525 , H01M2/1077 , H01M2/1083 , H01M2/1094 , H01M2/206 , H01M2/305 , H01M10/0413 , H01M10/0418 , Y02T10/7011
摘要： A bipolar battery and a battery assembly unit that reduces a current density change in a battery element is disclosed. The bipolar battery comprises a battery element configured by alternately stacking a bipolar electrode and an electrolyte layer, as well as cathode and anode terminal plates electrically connected to the battery element so as to extract the current from the battery element. In the bipolar battery, the total electrical resistance of the cathode and anode terminal plates along the surface direction is smaller than the total electrical resistance of the battery element along the stacking direction between the cathode and anode terminal plates.
摘要翻译：公开了减少电池元件的电流密度变化的双极电池和电池组件单元。双极电池包括通过交替堆叠双极电极和电解质层以及与电池元件电连接以从电池元件提取电流的阴极和阳极端子板而配置的电池元件。在双极型电池中，阴极和阳极端子板沿着表面方向的总电阻小于阴极和阳极端子板之间沿堆叠方向的电池元件的总电阻。

4. 发明授权

US07989295B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US07989295B2
公开(公告)日：2011-08-02
申请号：US13014190
申请日：2011-01-26
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L21/336
CPC分类号： H01L29/7828 , H01L29/0623 , H01L29/1608 , H01L29/267 , H01L29/66068
摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

5. 发明授权

US07671383B2 Semiconductor device and method of producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07671383B2
公开(公告)日：2010-03-02
申请号：US11714214
申请日：2007-03-06
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/732
CPC分类号： H01L29/267 , H01L21/0475 , H01L29/0623 , H01L29/0847 , H01L29/1608 , H01L29/4236 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device, includes: a first conductivity type semiconductor base having a main face; a hetero semiconductor region contacting the main face of the semiconductor base and forming a hetero junction in combination with the semiconductor base, the semiconductor base and the hetero semiconductor region in combination defining a junction end part; a gate insulating film defining a junction face in contact with the semiconductor base and having a thickness; and a gate electrode disposed adjacent to the junction end part via the gate insulating film and defining a shortest point in a position away from the junction end part by a shortest interval, a line extending from the shortest point to a contact point vertically relative to the junction face, forming such a distance between the contact point and the junction end part as to be smaller than the thickness of the gate insulating film contacting the semiconductor base.
摘要翻译：一种半导体器件，包括：具有主面的第一导电型半导体基底; 与半导体基板的主面接触并与半导体基底结合形成异质结的异质半导体区域，半导体基底和异质半导体区域组合形成连接端部; 限定与半导体基底接触并具有厚度的接合面的栅极绝缘膜; 以及栅电极，其经由所述栅极绝缘膜与所述接合端部相邻设置，并且在远离所述接合端部的位置中以最短间隔限定最短点，从所述最短点到接触点相对于所述接合端垂直延伸的线接合面在接触点和接合端部之间形成的距离小于与半导体基底接触的栅极绝缘膜的厚度。

6. 发明申请

US20090278169A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090278169A1
公开(公告)日：2009-11-12
申请号：US12065847
申请日：2006-08-22
申请人： Tetsuya Hayashi , Yoshio Shimoida , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Yoshio Shimoida , Masakatsu Hoshi , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/861 , H01L21/046 , H01L29/0623 , H01L29/0653 , H01L29/1608 , H01L29/267 , H01L29/6606 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.
摘要翻译：半导体器件包括：半导体基底; 与半导体基底接触并且具有与半导体基底不同的带隙的异质半导体区域; 连接到所述异质半导体区域的第一电极; 以及形成与半导体基底的欧姆接触的第二电极。异质半导体区域包括通过层叠在至少两层之间的边界处晶体取向不连续的多个半导体层而形成的层叠异质半导体区域。

7. 发明授权

US07531396B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07531396B2
公开(公告)日：2009-05-12
申请号：US11374418
申请日：2006-03-14
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka
IPC分类号： H01L21/338 , H01L21/066
CPC分类号： H01L29/66068 , H01L21/8213 , H01L29/0619 , H01L29/0623 , H01L29/0847 , H01L29/1608 , H01L29/267 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/7828
摘要： A method of manufacturing a semiconductor device is disclosed. The semiconductor device includes a semiconductor body of a first conductivity type, a hetero semiconductor region adjacent to one main surface of the semiconductor body and having a band gap different from that of the semiconductor body, and a gate electrode formed in a junction portion between the hetero semiconductor region and the semiconductor body through a gate insulating film. The method includes a first process of forming a predetermined trench by using a mask layer having a predetermined opening on one main surface side of the semiconductor body, a second process of forming a buried region adjacent to at least a side wall of the trench and so as to extend from the trench, a third process of forming a hetero semiconductor layer so as to adjoin the semiconductor body and the buried region, and a fourth process of forming the hetero semiconductor region by patterning the hetero semiconductor layer.
摘要翻译：公开了制造半导体器件的方法。半导体器件包括第一导电类型的半导体本体，与半导体本体的一个主表面相邻且具有与半导体本体不同的带隙的异质半导体区域，以及形成在该半导体器件之间的接合部分中的栅电极异质半导体区域和半导体本体通过栅极绝缘膜。该方法包括通过使用在半导体主体的一个主表面侧上具有预定开口的掩模层来形成预定沟槽的第一工艺，形成与沟槽的至少侧壁相邻的掩埋区域的第二工艺从沟槽延伸，形成与半导体本体和掩埋区相邻的异质半导体层的第三工序，以及通过图案化杂半导体层形成异质半导体区的第四工序。

8. 发明申请

US20080292952A1 SECONDARY BATTERY AND VEHICLE MOUNTING THE SAME 有权
标题翻译：二次电池和车辆安装
公开(公告)号：US20080292952A1
公开(公告)日：2008-11-27
申请号：US12121923
申请日：2008-05-16
申请人： Yasuhiro Yanagihara , Hideaki Horie , Yoshio Shimoida , Kyouichi Watanabe , Osamu Shimamura , Yuichiro Yamamura
发明人： Yasuhiro Yanagihara , Hideaki Horie , Yoshio Shimoida , Kyouichi Watanabe , Osamu Shimamura , Yuichiro Yamamura
IPC分类号： H01M6/12
CPC分类号： H01M10/0585 , H01M2/266 , H01M10/0413 , H01M10/0463 , H01M10/0525 , Y02E60/122 , Y02T10/7011
摘要： The disclosure discusses a secondary battery with superior durability and a vehicle configured to mount the same. The secondary battery comprises an electrode structure wherein a cathode is formed at one side of a base material layer having electrical insulating property and an anode is formed at another side of the base material layer. A plurality of electrode structures are stacked with an electrolyte layer interposed therebetween such that the cathode and anode of adjacent electrode structures are on opposite sides of the electrolyte layer.
摘要翻译：本公开内容讨论了具有优异耐用性的二次电池和被配置为安装它的车辆。二次电池包括电极结构，其中阴极形成在具有电绝缘性的基材层的一侧，阳极形成在基材层的另一侧。多个电极结构层叠有电解质层，使得相邻电极结构的阴极和阳极位于电解质层的相对侧。

9. 发明申请

US20070252173A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070252173A1
公开(公告)日：2007-11-01
申请号：US11790791
申请日：2007-04-27
申请人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
发明人： Tetsuya Hayashi , Masakatsu Hoshi , Yoshio Shimoida , Hideaki Tanaka , Shigeharu Yamagami
IPC分类号： H01L29/739
CPC分类号： H01L29/0847 , H01L29/1033 , H01L29/1608 , H01L29/267 , H01L29/4916 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device is provided with: a semiconductor substrate of a predetermined electroconduction type; a hetero semiconductor region contacted with a first main surface of the semiconductor substrate and comprising a semiconductor material having a bandgap different from that of the semiconductor substrate; a gate electrode formed through a gate insulator layer at a position adjacent to a junction region between the hetero semiconductor region and the semiconductor substrate; a source electrode connected to the hetero semiconductor region; and a drain electrode connected to the semiconductor substrate; wherein the hetero semiconductor region includes a contact portion contacted with the source electrode, at least a partial region of the contact portion is of the same electroconduction type as the electroconduction type of the semiconductor substrate, and the partial region has an impurity concentration higher than an impurity concentration of at least that partial region of a gate-electrode facing portion in the hetero semiconductor region which is positioned to face toward the gate electrode through the gate insulator layer.
摘要翻译：半导体器件具有：预定的导电型的半导体衬底; 与所述半导体衬底的第一主表面接触并且包括具有与所述半导体衬底的带隙不同的带隙的半导体材料的异质半导体区域; 在与所述异质半导体区域和所述半导体基板之间的接合区域相邻的位置处形成的栅极电极，连接到所述异质半导体区的源电极; 和连接到半导体衬底的漏电极; 其中所述异质半导体区域包括与所述源电极接触的接触部分，所述接触部分的至少一部分区域具有与所述半导体衬底的导电型相同的导电类型，并且所述部分区域的杂质浓度高于至少通过栅极绝缘体层位于面向栅电极的异质半导体区域中的栅电极面对部分的部分区域的杂质浓度。

10. 发明申请

US20070252171A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070252171A1
公开(公告)日：2007-11-01
申请号：US11790679
申请日：2007-04-26
申请人： Shigeharu Yamagami , Masakatsu Hoshi , Yoshio Shimoida , Tetsuya Hayashi , Hideaki Tanaka
发明人： Shigeharu Yamagami , Masakatsu Hoshi , Yoshio Shimoida , Tetsuya Hayashi , Hideaki Tanaka
IPC分类号： H01L29/732
CPC分类号： H01L29/8613 , H01L21/0465 , H01L21/0475 , H01L29/0615 , H01L29/1608 , H01L29/267 , H01L29/6606 , H01L29/66136
摘要： As semiconductor regions in contact with a first main surface of a semiconductor base composed by forming an N− silicon carbide epitaxial layer on an N+ silicon carbide substrate connected to a cathode electrode, there are provided both of an N+ polycrystalline silicon layer of a same conduction type as a conduction type of the semiconductor base and a P+ polycrystalline silicon layer of a conduction type different from the conduction type of the semiconductor base. Both of the N+ polycrystalline silicon layer and the P+ polycrystalline silicon layer are hetero-joined to the semiconductor base, and are ohmically connected to the anode electrode. Moreover, the N+ polycrystalline silicon layer of the same conduction type as the conduction type of the semiconductor base is formed so as to contact the first main surface of the semiconductor base, and the P+ polycrystalline silicon layer of the conduction type different from the conduction type of the semiconductor base is formed in trenches dug on the first main surface of the semiconductor base.
摘要翻译：作为与通过在与阴极连接的N +碳化硅衬底上形成N-碳化硅外延层而构成的半导体衬底的第一主表面接触的半导体区域，提供了具有相同导电性的N +多晶硅层类型为半导体基底的导电类型和不同于半导体基底的导电类型的导电类型的P +多晶硅层。 N +多晶硅层和P +多晶硅层都与半导体基体异相接合，并与欧姆连接到阳极电极。此外，形成与半导体基底的导电类型相同的导电类型的N +多晶硅层，以便与半导体基底的第一主表面接触，并且与导电类型不同的导电类型的P +多晶硅层形成在半导体基底的第一主表面上的沟槽中。

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