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1. 发明申请

WO2009056048A1 METHOD AND STRUCTURE FOR SELF-SEALED JOINT PROOF-OF-KNOWLEDGE AND DIFFIE-HELLMAN KEY-EXCHANGE PROTOCOLS 审中-公开
标题翻译：自密封联合验证密码交换协议的方法与结构
公开(公告)号：WO2009056048A1
公开(公告)日：2009-05-07
申请号：PCT/CN2008/072794
申请日：2008-10-23
申请人： YAO, Andrew C. , ZHAO, Yunlei , DING, Sufen , YAO, France F.
发明人： YAO, Andrew C. , ZHAO, Yunlei , DING, Sufen , YAO, France F.
IPC分类号： H04L9/32
CPC分类号： H04L9/0841 , H04L9/3218
摘要： A method (and structure) for a party (the prover) to prove its knowledge, jointly and non-malleably, of multiple secret (fixed and/or ephemeral) Diffie-Hellman exponents (DH-exponents), corresponding to its public (fixed and/or ephemeral) DH-components and with respect to the public (fixed and/or ephemeral) challenging DH-components from another party (the verifier). The joint proof-of-knowledge (JPOK) consists of secrets made by multiplying multiple DH-secrets, which can be generated and verified by each party by its own secret DH-exponents and the public DH-components of both parties. To ensure the non-malleability of the JPOK, the method invented herein makes all these multiplied DH-secrets to be independent, and makes the session-tag committed to the multiplied DH-secrets. To preserve players' privacy and/or to improve protocol efficiency, the invented method makes the DH-secrets to be multiplied to further satisfy at least one of the following (besides above independence and commitments properties): (1) Deniability: all the DH-secrets to be multiplied can be computed out merely from the ephemeral secret DH-exponents and the public DH-components of both parties; (2) Pre-computability: a DH-secret involving a fixed DH-component of a party can be offline pre-computed by its peer; (3) Post-ID computability: a DH-secret involving an ephemeral DH-component of a party can be computed by its peer without knowing that party's identity and/or fixed DH-components. The secrets made by multiplying multiple DH-secrets can then be used to derive session-keys and to generate and verify authenticators between the parties. The invented method can also be used in parallel or subsequently by the parties, possibly with reserved player roles in different runs of the method, for mutual identifications, key confirmations, and for achieving more advanced cryptographic protocols in various settings.
摘要翻译：一个方法（和结构）一方（证明者）证明其共同和不可塑造的多个秘密（固定和/或短暂）Diffie-Hellman指数（DH指数）的知识，对应于其公共（固定的和/或短暂的）DH组分和相对于公众（固定和/或短暂的）挑战来自另一方（验证者）的DH组分。联合证据知识（JPOK）包括通过乘以多个DH秘密而产生的秘密，每个秘密可以由各方由其自己的秘密DH指数和双方的公共部门组成部分产生和验证。为了确保JPOK的不可延展性，本文所发明的方法使得所有这些相乘的DH秘密是独立的，并且使会话标签落实到繁殖的DH秘密。为了保护玩家的隐私和/或提高协议效率，本发明的方法使得DH秘密被乘以进一步满足以下至少之一（除了上述独立性和承诺属性之外）：（1）可否性：所有DH - 可以仅从短暂的秘密DH指数和双方的公共部门组成部分计算出乘数的百分比; （2）预可计算性：涉及一方的固定DH分量的DH秘密可以由对等体预先计算; （3）Post-ID可计算性：涉及一方的临时DH分量的DH秘密可以由对端计算，而不知道该方的身份和/或固定的DH组件。然后可以使用乘以多个DH秘密产生的秘密来导出会话密钥，并生成和验证双方之间的验证方。本发明的方法还可以并行地或随后由各方使用，可能在方法的不同运行中具有保留的播放器角色，用于相互标识，密钥确认以及在各种设置中实现更高级的加密协议。

2. 发明申请

WO2011072061A2 ENHANCED PASSIVATION PROCESS TO PROTECT SILICON PRIOR TO HIGH DOSE IMPLANT STRIP 审中-公开
标题翻译：增强钝化过程以保护高剂量植入物条带
公开(公告)号：WO2011072061A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/059547
申请日：2010-12-08
申请人： NOVELLUS SYSTEMS, INC. , CHEUNG, David , FANG, Haoquan , KUO, Jack , KALINOVSKI, Ilia , LI, Ted , YAO, Andrew
发明人： CHEUNG, David , FANG, Haoquan , KUO, Jack , KALINOVSKI, Ilia , LI, Ted , YAO, Andrew
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/31138 , H01J37/32357 , H01L21/02057
摘要： improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.
摘要翻译：提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进的方法和设备。根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以除去光致抗蚀剂和与离子注入相关的残余物。本发明的方面包括减少硅损失，留下很少或没有残留物，同时保持可接受的剥离速率。在某些实施方案中，方法和装置在高剂量离子注入工艺之后去除光致抗蚀剂材料。

3. 发明申请

WO2011071980A2 ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP 审中-公开
标题翻译：超低硅低损耗植皮带
公开(公告)号：WO2011071980A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/059388
申请日：2010-12-08
申请人： NOVELLUS SYSTEMS, INC. , CHEUNG, David , FANG, Haoquan , KUO, Jack , KALINOVSKI, Ilia , LI, Ted , YAO, Andrew , GUHA, Anirban , OSTROWSKI, Kirk
发明人： CHEUNG, David , FANG, Haoquan , KUO, Jack , KALINOVSKI, Ilia , LI, Ted , YAO, Andrew , GUHA, Anirban , OSTROWSKI, Kirk
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.
摘要翻译：提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进方法。根据各种实施例，使用元素氢，含氟气体和保护气体产生等离子体。等离子体活化气体与高剂量植入物抗蚀剂反应，去除了外壳和体抗蚀剂层，同时保护了工件表面的暴露部分。工件表面基本上无残留物，硅损耗低。

4. 发明申请

WO2011072061A3 ENHANCED PASSIVATION PROCESS TO PROTECT SILICON PRIOR TO HIGH DOSE IMPLANT STRIP 审中-公开
标题翻译：增强钝化工艺以保护高剂量植入带之前的硅
公开(公告)号：WO2011072061A3
公开(公告)日：2011-09-22
申请号：PCT/US2010059547
申请日：2010-12-08
申请人： NOVELLUS SYSTEMS INC , CHEUNG DAVID , FANG HAOQUAN , KUO JACK , KALINOVSKI ILIA , LI TED , YAO ANDREW
发明人： CHEUNG DAVID , FANG HAOQUAN , KUO JACK , KALINOVSKI ILIA , LI TED , YAO ANDREW
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/31138 , H01J37/32357 , H01L21/02057
摘要： improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.
摘要翻译：提供了用于剥离光致抗蚀剂并从工件表面去除离子注入相关残留物的改进的方法和设备。根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以去除光致抗蚀剂和离子注入相关残留物。本发明的各方面包括减少硅损失，在保持可接受的剥离速率的同时留下很少或没有残留物。在某些实施例中，方法和设备在高剂量离子注入工艺之后移除光刻胶材料。

5. 发明申请

WO2011071980A3 ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP 审中-公开
标题翻译：超低硅损失高剂量植入带
公开(公告)号：WO2011071980A3
公开(公告)日：2011-09-01
申请号：PCT/US2010059388
申请日：2010-12-08
申请人： NOVELLUS SYSTEMS INC , CHEUNG DAVID , FANG HAOQUAN , KUO JACK , KALINOVSKI ILIA , LI TED , YAO ANDREW , GUHA ANIRBAN , OSTROWSKI KIRK
发明人： CHEUNG DAVID , FANG HAOQUAN , KUO JACK , KALINOVSKI ILIA , LI TED , YAO ANDREW , GUHA ANIRBAN , OSTROWSKI KIRK
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk resist layers, while simultaneously protecting exposed portions of the work piece surface. The work piece surface is substantially residue free with low silicon loss.
摘要翻译：提供了剥离光刻胶并从工件表面除去离子注入相关残留物的改进方法。根据各种实施例，使用元素氢，含氟气体和保护气体产生等离子体。等离子体激活的气体与高剂量注入抗蚀剂反应，除去外壳和体阻挡层两者，同时保护工件表面的暴露部分。工件表面基本无残留，硅损失低。

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