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1. 发明专利

IL268224D0 Pharmaceutical composition for preventing and treating pancreatic cancer, containing gossypol and phenformin as active ingredients 未知
公开(公告)号：IL268224D0
公开(公告)日：2019-09-26
申请号：IL26822419
申请日：2019-07-23
申请人： NAT CANCER CT , SOO YOUL KIM , SANG MYUNG WOO , WOO JIN LEE , TAE HYUN KIM , SANG JAE PARK , JU HEE LEE , SUNG SIK HAN , EUN KYUNG HONG
发明人： SOO YOUL KIM , SANG MYUNG WOO , WOO JIN LEE , TAE HYUN KIM , SANG JAE PARK , JU HEE LEE , SUNG SIK HAN , EUN KYUNG HONG
IPC分类号： A61K20060101
摘要： The present invention provides a pharmaceutical composition containing gossypol and phenformin, capable of exhibiting a synergistic effect in the treatment of pancreatic cancer. When gossypol and phenformin are mixed in a concentration range provided in the present invention and the mixture is applied to the treatment of pancreatic cancer, apoptotic effects on pancreatic cancer are remarkably increased because of the co-administration thereof even in a concentration range in which a significant pancreatic cancer treatment effect cannot be achieved by the administration of gossypol or phenformin alone, such that pancreatic cancer can be effectively treated. Additionally, when an anti-cancer agent is mixed in addition to gossypol and phenformin and the mixture is applied to the treatment of pancreatic cancer, apoptotic effects on cancer cells can be remarkably increased such that pancreatic cancer can be effectively treated.

2. 发明授权

US09396988B2 Methods for fabricating semiconductor devices using liner layers to avoid damage to underlying patterns 有权
标题翻译：使用衬里层制造半导体器件以避免损坏底层图案的方法
公开(公告)号：US09396988B2
公开(公告)日：2016-07-19
申请号：US14703556
申请日：2015-05-04
申请人： Kyoung-Woo Lee , Woo-Jin Lee , Jong-Sam Kim , Woo-Kyung You , Young-Sang Lee , Min Huh
发明人： Kyoung-Woo Lee , Woo-Jin Lee , Jong-Sam Kim , Woo-Kyung You , Young-Sang Lee , Min Huh
IPC分类号： H01L21/02 , H01L21/311 , H01L21/70 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/31144 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76843 , H01L2221/1063
摘要： A method for fabricating a semiconductor device includes sequentially forming an interlayer insulating layer and a hard mask pattern including a first opening on a substrate including a lower pattern, forming a trench exposing the lower pattern in the interlayer insulating layer using the hard mask pattern, forming a liner layer including a first part formed along sidewalls and a bottom surface of the trench and a second part formed along a top surface of the hard mask pattern, forming a sacrificial pattern exposing the second part of the liner layer in the trench, removing the second part of the liner layer and the hard mask pattern using the sacrificial pattern, and after the removing of the hard mask pattern, removing the sacrificial pattern to expose the first part of the liner layer.
摘要翻译：一种制造半导体器件的方法包括在包括下图案的衬底上顺序地形成层间绝缘层和包括第一开口的硬掩模图案，使用硬掩模图案形成在层间绝缘层中暴露下图案的沟槽，形成包括沿着沟槽的侧壁和底表面形成的第一部分和沿着硬掩模图案的顶表面形成的第二部分的衬垫层，形成暴露沟槽中的衬垫层的第二部分的牺牲图案，衬垫层的第二部分和使用牺牲图案的硬掩模图案，并且在去除硬掩模图案之后，去除牺牲图案以露出衬垫层的第一部分。

3. 发明授权

US09291899B2 Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权
标题翻译：抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法
公开(公告)号：US09291899B2
公开(公告)日：2016-03-22
申请号：US12654737
申请日：2009-12-30
申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
发明人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
IPC分类号： G03F7/075 , G03F7/09 , G03F7/11 , G03F7/30 , G03F7/36 , C08G77/50 , C08G77/52 , C08K5/00 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/00
CPC分类号： G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
摘要： A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
摘要翻译：抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种化学式3〜5表示的第二化合物。

4. 发明授权

US08921258B2 Catalyst for selective oxidation of NH3 to N2 and method for preparing the same 有权
标题翻译：用于NH 3选择性氧化为N 2的催化剂及其制备方法
公开(公告)号：US08921258B2
公开(公告)日：2014-12-30
申请号：US13510182
申请日：2010-11-19
申请人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
发明人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
IPC分类号： B01J23/00 , B01J23/08 , B01J23/32 , B01J23/40 , B01J23/42 , B01J23/44 , B01J23/56 , B01J21/04 , B01J20/00 , B01J27/224 , B01J29/04 , B01D53/94 , B01J23/889
CPC分类号： B01J29/04 , B01D53/9436 , B01D2255/1023 , B01D2255/2073 , B01D2255/20753 , B01D2255/2092 , B01J23/889 , Y10S502/52719
摘要： Disclosed is a catalyst which can convert ammonia contained in exhaust gas from an engine of a vehicle equipped with a Urea-SCR (Urea-Selective Catalytic Reduction) system, to nitrogen, and a method for preparating the same. The catalyst can convert ammonia which is failed to participate in a conversion reaction of NOx to N2 and slipped out of the SCR catalyst, to nitrogen via a SCO (Selective Catalytic Oxidation) reaction, before the ammonia is released to the air.
摘要翻译：公开了一种可以将装备有尿素SCR（尿素选择性催化还原）系统的车辆的发动机排出的废气中的氨转化成氮的催化剂及其制备方法。在将氨释放到空气之前，催化剂可以转化未参与NO x与N 2的转化反应并从SCR催化剂中滑出的氨，通过SCO（选择性催化氧化）反应转化为氮。

5. 发明申请

US20130330989A1 COMPOSITE SHEET, METHOD FOR PREPARING THE SAME, AND DISPLAY SUBSTRATE INCLUDING THE SAME 审中-公开
标题翻译：复合片，其制备方法和显示包括其的基材
公开(公告)号：US20130330989A1
公开(公告)日：2013-12-12
申请号：US13915975
申请日：2013-06-12
申请人： Sung Han IM , Young Kwon KIM , Seok Won CHOI , Sang Keol LEE , Eun Hwan JEONG , Woo Jin LEE
发明人： Sung Han IM , Young Kwon KIM , Seok Won CHOI , Sang Keol LEE , Eun Hwan JEONG , Woo Jin LEE
IPC分类号： C08K3/40
CPC分类号： C08K3/40 , C08G77/045 , C08G77/12 , C08G77/20 , C08G77/50 , C08J5/24 , C08J2383/05 , C08J2383/07 , C08J2383/14 , C08L83/14 , Y10T442/10 , Y10T442/2992
摘要： A composite sheet includes a matrix and a reinforcing material impregnated in the matrix. The composite sheet has a weight variation (ΔW) of about 98% or more at 350° C. and a relaxation modulus of about 1000 MPa or less under a load of 100 μN.
摘要翻译：复合片材包括基质和浸渍在基质中的增强材料。复合片材在350℃下的重量变化（DeltaW）为约98％以上，在100μN的载荷下的松弛模量为约1000MPa以下。

6. 发明申请

US20130224090A1 CATALYST FOR SELECTIVE OXIDATION OF NH3 TO N2 AND METHOD FOR PREPARING THE SAME 有权
标题翻译：用于选择性氧化NH 3至N 2的催化剂及其制备方法
公开(公告)号：US20130224090A1
公开(公告)日：2013-08-29
申请号：US13510182
申请日：2010-11-19
申请人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
发明人： Seong Ho Lee , Woo Jin Lee , Young Eun Cheon , Seung Hoon Oh , Sung Hwan Kim , Hong Seok Jung , Yong Woo Kim , Gi Ho Goh
IPC分类号： B01J29/04 , B01D53/94
CPC分类号： B01J29/04 , B01D53/9436 , B01D2255/1023 , B01D2255/2073 , B01D2255/20753 , B01D2255/2092 , B01J23/889 , Y10S502/52719
摘要： Disclosed is a catalyst which can convert ammonia contained in exhaust gas from an engine of a vehicle equipped with a Urea-SCR (Urea-Selective Catalytic Reduction) system, to nitrogen, and a method for preparating the same. The catalyst can convert ammonia which is failed to participate in a conversion reaction of NOx to N2 and slipped out of the SCR catalyst, to nitrogen via a SCO (Selective Catalytic Oxidation) reaction, before the ammonia is released to the air.
摘要翻译：公开了一种可以将装备有尿素SCR（尿素选择性催化还原）系统的车辆的发动机排出的废气中的氨转化成氮的催化剂及其制备方法。在将氨释放到空气之前，催化剂可以转化未参与NO x与N 2的转化反应并从SCR催化剂中滑出的氨，通过SCO（选择性催化氧化）反应转化为氮。

7. 发明申请

US20130161075A1 CONNERTING STRUCTURE OF TOUCH PANEL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：触控面板的连接结构及其制造方法
公开(公告)号：US20130161075A1
公开(公告)日：2013-06-27
申请号：US13424439
申请日：2012-03-20
申请人： Woo Jin LEE , Sang Su HONG
发明人： Woo Jin LEE , Sang Su HONG
IPC分类号： H05K1/02 , H05K3/00
CPC分类号： G06F3/041 , G06F2203/04103 , H05K1/118 , H05K2201/055 , Y10T29/49155
摘要： Disclosed herein are a connecting structure of a touch panel and a method for manufacturing the same. The connecting structure of the present invention includes a flexible film; a first electrode formed on one surface of the flexible film; a second electrode formed on the other surface of the flexible film; and a folding part extendedly formed from a side end of the flexible film to be foldably bonded to one surface of the flexible film, wherein the second electrode extends along an outer surface of the folding part so that the first electrode and the second electrode formed at the folding part are disposed on a co-plane.
摘要翻译：这里公开了触摸面板的连接结构及其制造方法。本发明的连接结构包括柔性膜; 形成在柔性膜的一个表面上的第一电极; 形成在所述柔性膜的另一个表面上的第二电极; 以及折叠部，其从所述柔性膜的侧端部延伸地形成为可折叠地接合到所述柔性膜的一个表面，其中所述第二电极沿着所述折叠部的外表面延伸，使得所述第一电极和所述第二电极形成在折叠部分设置在共面上。

8. 发明申请

US20130021268A1 TOUCH PANEL 审中-公开
标题翻译：触控面板
公开(公告)号：US20130021268A1
公开(公告)日：2013-01-24
申请号：US13252755
申请日：2011-10-04
申请人： Woo Jin Lee , Sang Su Hong , Jae Hun Kim , Chung Mo Yang , In Hyung Lee , Seul Gi Kim , Young Woo Lee
发明人： Woo Jin Lee , Sang Su Hong , Jae Hun Kim , Chung Mo Yang , In Hyung Lee , Seul Gi Kim , Young Woo Lee
IPC分类号： G06F3/041
CPC分类号： G06F3/0416 , G06F3/044 , G06F3/045
摘要： Disclosed herein is a touch panel, including: a base substrate divided into an active area, a bezel area surrounding the active area, and a connection area provided outside the bezel area; sensing electrodes formed in the active area; and electrode wirings connected to the sensing electrodes and extended to the connecting area. Here, a predetermined portion of the base substrate is cut and the connection area is folded by using the predetermined portion as a boundary line such that the connection area is protruded outwardly from the base substrate. According to the present invention, the connection area is provided in the base substrate in a single body, thereby allowing omission of separate flexible printed cables, and thus, an attaching process of the flexible printed cable can also be omitted.
摘要翻译：这里公开了一种触摸面板，包括：分为活动区域的基底基板，围绕有源区域的边框区域和设置在边框区域外部的连接区域; 形成在有源区中的感测电极; 和连接到感测电极并延伸到连接区域的电极配线。这里，通过使用预定部分作为边界线，将基底基板的预定部分切割并且连接区域被折叠，使得连接区域从基底基板向外突出。根据本发明，连接区域设置在单个主体中的基底基板中，从而可以省略单独的柔性印刷电缆，因此也可以省略柔性印刷电缆的连接过程。

9. 发明申请

US20110128170A1 Semiconductor devices, a system including semiconductor devices and methods thereof 审中-公开
标题翻译：半导体器件，包括半导体器件的系统及其方法
公开(公告)号：US20110128170A1
公开(公告)日：2011-06-02
申请号：US12923858
申请日：2010-10-12
申请人： Seung-Jun Bae , Seong-Jin Jang , Kwang-Il Park , Woo-Jin Lee
发明人： Seung-Jun Bae , Seong-Jin Jang , Kwang-Il Park , Woo-Jin Lee
IPC分类号： H03M7/00
CPC分类号： H03K19/00346 , H04L25/03866 , H04L25/14 , H04L25/4908
摘要： Semiconductor devices, a system including said semiconductor devices and methods thereof are provided. An example semiconductor device may receive data scheduled for transmission, scramble an order of bits within the received data, the scrambled order arranged in accordance with a given pseudo-random sequence. The received data may be balanced such that a difference between a first number of the bits within the received data equal to a first logic level and a second number of bits within the received data equal to a second logic level is below a threshold. The balanced and scrambled received data may then be transmitted. The example semiconductor device may perform the scrambling and balancing operations in any order. Likewise, on a receiving end, another semiconductor device may decode the original data by unscrambling and unbalancing the transmitted data. The unscrambling and unbalancing operations may be performed in an order based upon the order in which the transmitted data is scrambled and balanced.
摘要翻译：提供半导体器件，包括所述半导体器件的系统及其方法。半导体器件的示例可以接收被调度用于发送的数据，对接收到的数据内的比特顺序进行加扰，根据给定的伪随机序列排列的加扰顺序。所接收的数据可以是平衡的，使得等于第一逻辑电平的接收数据内的第一比特数与等于第二逻辑电平的接收数据中的第二比特数之间的差异低于阈值。然后可以发送平衡和加扰的接收数据。示例半导体器件可以以任何顺序执行加扰和平衡操作。类似地，在接收端，另一个半导体器件可以通过对发送的数据进行解扰和不平衡来解码原始数据。可以基于发送的数据被加扰和平衡的顺序以顺序执行解扰和不平衡操作。

10. 发明申请

US20110086516A1 METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD 有权
标题翻译：通过改性PEALD方法沉积具有Si-N键的电介质膜的方法
公开(公告)号：US20110086516A1
公开(公告)日：2011-04-14
申请号：US12901323
申请日：2010-10-08
申请人： Woo Jin Lee , Kuo-wei Hong , Akira Shimizu , Deakyun Jeong
发明人： Woo Jin Lee , Kuo-wei Hong , Akira Shimizu , Deakyun Jeong
IPC分类号： H01L21/318
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4554 , C23C16/5096 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/31111 , H01L21/3141
摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
摘要翻译：通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底被放置将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

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