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1. 发明授权

US09209356B2 Light-emitting element including a light-emitting stack with an uneven upper surface 有权
标题翻译：发光元件包括具有不均匀上表面的发光叠层
公开(公告)号：US09209356B2
公开(公告)日：2015-12-08
申请号：US13491970
申请日：2012-06-08
申请人： Wei-Yo Chen
发明人： Wei-Yo Chen
IPC分类号： H01L29/15 , H01L33/00 , H01L33/22 , H01L33/40 , H01L33/42
CPC分类号： H01L33/22 , H01L33/405 , H01L33/42
摘要： A light-emitting element includes: a light-emitting stack including an uneven upper surface; a transparent conductive layer formed on the uneven upper surface; an insulating layer formed on the transparent conductive layer and filling the uneven upper surface, and partial regions of the transparent conductive layer are exposed; a reflective layer formed on the transparent conductive layer and the insulating layer; and a contact interface including a current blocking area formed between the insulating layer and the reflective layer and a plurality of first contact regions formed between the transparent conductive layer and the reflective layer; and an electrode structure formed on the reflective layer, and the reflective layer is between the light-emitting stack and the electrode structure in a vertical direction of the light-emitting element; wherein the current blocking area and the plurality of first contact regions are coplanar.
摘要翻译：发光元件包括：包括不均匀的上表面的发光叠层; 形成在不平坦的上表面上的透明导电层; 形成在透明导电层上的绝缘层，并且填充不平坦的上表面，并且透明导电层的局部区域露出; 形成在所述透明导电层和所述绝缘层上的反射层; 以及包括在所述绝缘层和所述反射层之间形成的电流阻挡区域和形成在所述透明导电层和所述反射层之间的多个第一接触区域的接触界面; 以及形成在所述反射层上的电极结构，并且所述反射层在所述发光层和所述电极结构之间沿所述发光元件的垂直方向; 其中所述电流阻挡区域和所述多个第一接触区域是共面的。

2. 发明授权

US08410495B2 Array-type light-emitting device and apparatus thereof 有权
标题翻译：阵列式发光装置及其装置
公开(公告)号：US08410495B2
公开(公告)日：2013-04-02
申请号：US12711739
申请日：2010-02-24
申请人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
发明人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
IPC分类号： H01L33/50
CPC分类号： H01L27/156 , F21V9/08 , G02F1/133603 , H01L24/24 , H01L33/505 , H01L33/508 , H01L33/62 , H01L2924/12041 , H01L2924/12044 , H01L2924/00
摘要： The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.
摘要翻译：本申请公开了一种阵列型发光装置，其包括基板，形成在基板上的半导体发光阵列，并发射具有第一光谱的第一光，其中半导体发光阵列包括第一发光单元和第二发光单元，形成在第一发光单元上的用于将第一光转换成具有第三光谱的第三光的第一波长转换层，以及连接第一发光单元和第二发光单元的电路层，发光单元，以使得第一发光单元和第二发光单元在通过电源驱动时根据预定时钟交替点亮。

3. 发明授权

US08299483B2 Light-emitting semiconductor apparatus 有权
标题翻译：发光半导体装置
公开(公告)号：US08299483B2
公开(公告)日：2012-10-30
申请号：US12652373
申请日：2010-01-05
申请人： Chih-Chiang Lu , Wei-Chih Peng , Chien-Yuan Wang , Wei-Yo Chen , Shiau-Huei San , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Wei-Chih Peng , Chien-Yuan Wang , Wei-Yo Chen , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/46
摘要： A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.
摘要翻译：发光半导体装置包括发光结构，反射结构和载体。发光结构包括第一类型半导体层，第二类型半导体层和位于第一类型半导体层和第二类型半导体层之间的发光层。反射结构具有第一透明导电层，第一图案化反射层，第二透明导电层和第二图案化反射层。第一图案化反射层设置在第一透明导电层和第二透明导电层之间，并且具有用于物理连接第一透明导电层和第二透明导电层的开口。第二透明导电层设置在第一图案化反射层和第二图案化反射层之间。第二图案化反射层位于与开口对应的区域上。发光结构和载体分别在反射结构的两侧。

4. 发明授权

US08269233B2 Vertical ACLED structure 有权
标题翻译：垂直ACLED结构
公开(公告)号：US08269233B2
公开(公告)日：2012-09-18
申请号：US12588745
申请日：2009-10-27
申请人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
发明人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
IPC分类号： H01L29/201 , H01L33/00 , H01L29/18 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.
摘要翻译：本申请涉及光电器件，包括具有第一n型半导体层，第一发光层，第一p型半导体层，第一p型电极和第一n型电极的第一ACLED ; 具有第二n型半导体层的第二ACLED，第二发光层，第二p型半导体层，第二p型电极和第二n型电极，其中，第一ACLED和第二ACLED 是垂直堆叠结构，并且以反并联方式连接。

5. 发明授权

US08928026B2 Optoelectronic device and method for manufacturing the same 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08928026B2
公开(公告)日：2015-01-06
申请号：US13565993
申请日：2012-08-03
申请人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
发明人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/20
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.
摘要翻译：光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

6. 发明申请

US20100127397A1 Optoelectronic semiconductor device 有权
标题翻译：光电半导体器件
公开(公告)号：US20100127397A1
公开(公告)日：2010-05-27
申请号：US12591617
申请日：2009-11-25
申请人： Wei-Yo Chen , Yen-Wen Chen , Chien-Yuan Wang , Min-Hsun Hsieh , Tzer-Perng Chen
发明人： Wei-Yo Chen , Yen-Wen Chen , Chien-Yuan Wang , Min-Hsun Hsieh , Tzer-Perng Chen
IPC分类号： H01L23/482
CPC分类号： H01L33/38 , H01L24/02 , H01L31/022408 , H01L31/022433 , H01L33/382 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , Y02E10/50 , H01L2924/00
摘要： An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.
摘要翻译：光电子半导体器件包括衬底，具有形成在衬底上的有源层和形成在半导体系统上的电极结构的半导体系统，其中具有至少第一导电类型接触区或第一导电类型的电极结构的布局接合焊盘，第二导电型接合焊盘，第一导电型延伸电极和第二导电型延伸电极，其中第一导电类型延伸电极和第二导电类型延伸电极具有三维交叉，部分第一导电性第一导电型接触区或第一导电型接合垫位于有源层的相对侧上。

7. 发明申请

US20100109028A1 Vertical ACLED structure 有权
标题翻译：垂直ACLED结构
公开(公告)号：US20100109028A1
公开(公告)日：2010-05-06
申请号：US12588745
申请日：2009-10-27
申请人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
发明人： Wei-Yo Chen , Yen-Wen Chen , Shu-Ting Hsu , Tsung Xian Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.
摘要翻译：本申请涉及光电器件，包括具有第一n型半导体层，第一发光层，第一p型半导体层，第一p型电极和第一n型电极的第一ACLED ; 具有第二n型半导体层的第二ACLED，第二发光层，第二p型半导体层，第二p型电极和第二n型电极，其中，第一ACLED和第二ACLED 是垂直堆叠结构，并且以反并联方式连接。

8. 发明申请

US20130032848A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20130032848A1
公开(公告)日：2013-02-07
申请号：US13565993
申请日：2012-08-03
申请人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
发明人： Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
IPC分类号： H01L33/48
CPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.
摘要翻译：光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

9. 发明授权

US08274156B2 Optoelectronic semiconductor device 有权
标题翻译：光电半导体器件
公开(公告)号：US08274156B2
公开(公告)日：2012-09-25
申请号：US12591617
申请日：2009-11-25
申请人： Wei-Yo Chen , Yen-Wen Chen , Chien-Yuan Wang , Min-Hsun Hsieh , Tzer-Perng Chen
发明人： Wei-Yo Chen , Yen-Wen Chen , Chien-Yuan Wang , Min-Hsun Hsieh , Tzer-Perng Chen
IPC分类号： H01L23/528
CPC分类号： H01L33/38 , H01L24/02 , H01L31/022408 , H01L31/022433 , H01L33/382 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , Y02E10/50 , H01L2924/00
摘要： An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.
摘要翻译：光电子半导体器件包括衬底，具有形成在衬底上的有源层和形成在半导体系统上的电极结构的半导体系统，其中具有至少第一导电类型接触区或第一导电类型的电极结构的布局接合焊盘，第二导电型接合焊盘，第一导电型延伸电极和第二导电型延伸电极，其中第一导电类型延伸电极和第二导电类型延伸电极具有三维交叉，部分第一导电性第一导电型接触区或第一导电型接合垫位于有源层的相对侧上。

10. 发明授权

US08253889B2 Display apparatus having an array-type light-emitting device 有权
标题翻译：具有阵列型发光装置的显示装置
公开(公告)号：US08253889B2
公开(公告)日：2012-08-28
申请号：US12711780
申请日：2010-02-24
申请人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
发明人： Shu-Ting Hsu , Yen-Wen Chen , Wei-Yo Chen , Tsung Xian Lee
IPC分类号： G02F1/1335
CPC分类号： G02F1/133617 , G02F1/133603 , G02F2001/133624 , H01L27/156
摘要： The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.
摘要翻译：本申请公开了一种阵列型发光装置，其包括基板，形成在基板上的半导体发光阵列，并发射具有第一光谱的第一光，其中半导体发光阵列包括第一发光单元和第二发光单元，形成在第一发光单元上的用于将第一光转换成具有第三光谱的第三光的第一波长转换层，以及连接第一发光单元和第二发光单元的电路层，发光单元，以使得第一发光单元和第二发光单元在通过电源驱动时根据预定时钟交替点亮。

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