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    • 6. 发明授权
    • Optical proximity correction (OPC) method for improving lithography process window
    • 光学邻近校正(OPC)方法,用于改进光刻工艺窗口
    • US06194104B1
    • 2001-02-27
    • US09414923
    • 1999-10-12
    • Tzu-Jeng Hsu
    • Tzu-Jeng Hsu
    • G03F900
    • G03F7/70441G03F1/36
    • A method is described for applying Optical Proximity Correction to corners and line ends in a pattern having critical dimensions in the sub micron region. Segments of curves are used to approximate corners and line ends in a pattern. The normal vector to the curve and area vector are then determined for all points on the segment of the curve used to approximate the pattern feature. The area vector has the same direction as the normal vector and a magnitude equal to the distance between the curve and the undistorted pattern. An optical proximity correction vector is then determined as the sum of a first scaler function multiplied by the unit normal vector and a second scaler function multiplied by the area vector. Next an optimum optical proximity correction shape is determined by moving the curve a distance and direction equal to the optical proximity correction vector. The optimum proximity correction shape is then approximated using regular geometric shapes, rectangles and triangles, to form an optical proximity corrected pattern. A mask of the optical proximity corrected pattern can be formed using electron beam methods without requiring excessive electron beam time.
    • 描述了一种将光学邻近校正应用于具有亚微米区域中的关键尺寸的图案的角部和线端的方法。 曲线段用于近似图形中的角和线端。 然后,对于用于近似图案特征的曲线段上的所有点,确定曲线和面积向量的法向量。 区域向量具有与法向量相同的方向,并且其幅度等于曲线与未失真模式之间的距离。 然后将光学邻近校正矢量确定为乘以单位法线矢量的第一缩放函数和乘以面积矢量的第二缩放函数的和。 接下来,通过将曲线移动等于光学邻近校正矢量的距离和方向来确定最佳光学邻近校正形状。 然后使用规则几何形状,矩形和三角形近似最佳邻近校正形状,以形成光学邻近校正图案。 可以使用电子束法形成光学接近校正图案的掩模,而不需要过多的电子束时间。