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1. 发明申请

US20140203370A1 Semiconductor Device and Fabricating Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140203370A1
公开(公告)日：2014-07-24
申请号：US14161744
申请日：2014-01-23
申请人： Shigenobu Maeda , Tsukasa Matsuda , Hidenobu Fukutome
发明人： Shigenobu Maeda , Tsukasa Matsuda , Hidenobu Fukutome
IPC分类号： H01L29/78
CPC分类号： H01L29/665 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41791 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fin, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain.
摘要翻译：提供半导体器件。所述半导体器件包括：衬底上的第一鳍片;与所述第一鳍片相交的所述衬底上形成的第一栅电极，所述第一栅电极两侧的所述第一鳍片上的第一升高源极/漏极;以及第一金属合金层在第一升高的源极/漏极的上表面和侧壁上。

2. 发明申请

US20120164826A1 Methods of Forming Metal Patterns in Openings in Semiconductor Devices 有权
标题翻译：在半导体器件中形成金属图案的方法
公开(公告)号：US20120164826A1
公开(公告)日：2012-06-28
申请号：US13411873
申请日：2012-03-05
申请人： Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
发明人： Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.
摘要翻译：公开了一种形成半导体器件的方法。其中具有开口的电介质层形成在半导体衬底上。开口的内表面用等离子体处理。在等离子体处理的开口的内表面上形成阻挡金属层。在阻挡金属层上形成种子层。在种子层上形成金属体层。可以通过使用这些方法来制造高质量的半导体器件，这些方法可以稳定地填充形成在电介质层中的开口。

3. 发明授权

US08148261B2 Methods of forming metal patterns in openings in semiconductor devices 有权
标题翻译：在半导体器件的开口中形成金属图案的方法
公开(公告)号：US08148261B2
公开(公告)日：2012-04-03
申请号：US12714571
申请日：2010-03-01
申请人： Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
发明人： Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.
摘要翻译：公开了一种形成半导体器件的方法。其中具有开口的电介质层形成在半导体衬底上。开口的内表面用等离子体处理。在等离子体处理的开口的内表面上形成阻挡金属层。在阻挡金属层上形成种子层。在种子层上形成金属体层。可以通过使用这些方法来制造高质量的半导体器件，这些方法可以稳定地填充形成在电介质层中的开口。

4. 发明授权

US08018321B2 Baggage management gate 有权
标题翻译：行李管理门
公开(公告)号：US08018321B2
公开(公告)日：2011-09-13
申请号：US12073784
申请日：2008-03-10
申请人： Shoji Yamaguchi , Yasunori Koda , Kunihiro Takahashi , Mario Fuse , Hiroyoshi Inoue , Tsukasa Matsuda
发明人： Shoji Yamaguchi , Yasunori Koda , Kunihiro Takahashi , Mario Fuse , Hiroyoshi Inoue , Tsukasa Matsuda
IPC分类号： B60R25/00 , G05B19/00 , G08B13/14 , H04B7/00
CPC分类号： G01R33/04 , G01R33/02
摘要： A baggage management gate including an exciting coil, a detecting coil and signal processing unit. The exciting coil forms an alternating magnetic field in a passage to an area from which manages objects to be carried in or carried out. The detecting coil detects a variation in the alternating magnetic field when magnetization of a magnetic material showing a large Barkhausen effect is reversed in the alternating magnetic field. The signal processing unit determines as to whether the magnetization reversal occurs in the alternating magnetic field due to the large Barkhausen effect or not, based on a signal detected by the detecting coil. The signal processing unit includes amplifier that amplifies the signal detected by the detecting coil with plural different amplification factors and output the amplified signals with each of the plural different amplification factors.
摘要翻译：包括励磁线圈，检测线圈和信号处理单元的行李管理门。励磁线圈在通过管道运送或执行物体的区域中形成交变磁场。当在交变磁场中表现出大的巴克豪森效应的磁性材料的磁化反转时，检测线圈检测交变磁场的变化。信号处理单元基于由检测线圈检测到的信号，确定由于大的巴克豪森效应而导致的交变磁场中的磁化反转是否发生。信号处理单元包括放大器，其放大由多个不同放大系数由检测线圈检测的信号，并以多个不同放大系数中的每一个输出放大的信号。

5. 发明授权

US07862918B2 Recording medium and sheet 有权
标题翻译：记录介质和片材
公开(公告)号：US07862918B2
公开(公告)日：2011-01-04
申请号：US11826918
申请日：2007-07-19
申请人： Tsukasa Matsuda , Eizo Kurihara , Shoji Yamaguchi , Kunihiro Takahashi , Mario Fuse , Tomofumi Tokiyoshi
发明人： Tsukasa Matsuda , Eizo Kurihara , Shoji Yamaguchi , Kunihiro Takahashi , Mario Fuse , Tomofumi Tokiyoshi
IPC分类号： B32B17/08 , B32B15/12
CPC分类号： G11B5/70 , Y10T428/31703 , Y10T428/31993
摘要： A recording medium includes a magnetic material and a pulp-fiber, a minimum value of shortest distances between the magnetic material and an edge of the recording medium substantially parallel to the pulp-fiber orientation direction being about 1 mm or more.
摘要翻译：记录介质包括磁性材料和纸浆纤维，磁性材料与基本上平行于纸浆纤维取向方向的记录介质的边缘之间的最短距离的最小值为约1mm以上。

6. 发明申请

US20100227473A1 Methods of Forming Metal Patterns in Openings in Semiconductor Devices 有权
标题翻译：在半导体器件中形成金属图案的方法
公开(公告)号：US20100227473A1
公开(公告)日：2010-09-09
申请号：US12714571
申请日：2010-03-01
申请人： Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
发明人： Tsukasa Matsuda , Gilheyun Choi , Jongmyeong Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.
摘要翻译：公开了一种形成半导体器件的方法。其中具有开口的电介质层形成在半导体衬底上。开口的内表面用等离子体处理。在等离子体处理的开口的内表面上形成阻挡金属层。在阻挡金属层上形成种子层。在种子层上形成金属体层。可以通过使用这些方法来制造高质量的半导体器件，这些方法可以稳定地填充形成在电介质层中的开口。

7. 发明申请

US20100082948A1 CHANNEL COMMAND WORD PRE-FETCHING APPARATUS 审中-公开
标题翻译：通道命令字预设装置
公开(公告)号：US20100082948A1
公开(公告)日：2010-04-01
申请号：US12493951
申请日：2009-06-29
申请人： Tsukasa Matsuda , Hideki Yamanaka
发明人： Tsukasa Matsuda , Hideki Yamanaka
IPC分类号： G06F9/30 , G06F3/00
CPC分类号： G06F3/0237 , G06F9/3802 , G06F9/383 , G06F9/3832 , G06F9/3842 , G06F9/3853 , G06F9/3885 , G06F13/385 , G06F17/279
摘要： In a CCW fetching section, for each input/output device being a control objective, a result prediction table in which prediction values of status values to be returned from an input/output device as execution results of CCW commands, is referred to. Then, based on the prediction values, commands being pre-fetching objectives are pre-fetched from a CCW program stored in a memory, and transmitted to a CCW executing section. On the other hand, in the CCW executing section, the pre-fetched commands are sequentially executed, and the actual status values as the execution results are received from the input/output device. Then, when the received actual status values are not same as the predicted status values, success or failure in prediction is notified to the CCW fetching section, and also, the result prediction table is updated in the CCW fetching section.
摘要翻译：在CCW提取部分中，对于作为控制目标的每个输入/输出设备，参考其中将作为CCW命令的执行结果从输入/输出设备返回的状态值的预测值的结果预测表。然后，基于预测值，从存储在存储器中的CCW程序中取出预取目标的命令，并发送给CCW执行部。另一方面，在CCW执行部中，依次执行预取命令，并且从输入/输出装置接收作为执行结果的实际状态值。然后，当接收的实际状态值与预测状态值不相同时，将预测成功或失败通知给CCW取出部，并且在CCW取出部中更新结果预测表。

8. 发明授权

US07600868B2 Recording paper and image recording method thereof 失效
标题翻译：记录纸及其图像记录方法
公开(公告)号：US07600868B2
公开(公告)日：2009-10-13
申请号：US11020268
申请日：2004-12-27
申请人： Chizuru Koga , Kiyoshi Hosoi , Takashi Ogino , Tsukasa Matsuda
发明人： Chizuru Koga , Kiyoshi Hosoi , Takashi Ogino , Tsukasa Matsuda
IPC分类号： B41M5/50
CPC分类号： B41M5/52 , B41M5/5218 , B41M5/5236 , B41M5/5245 , G03G7/0013 , G03G7/002 , G03G7/0026 , G03G7/004 , G03G7/0046 , Y10T428/24802
摘要： The present invention provides a recording paper comprising pulp fibers and filler as main components and containing at least a cationic substance and a water-soluble polymer in a surface of the recording paper, wherein conductivity of water is not less than 0.002 S/m as measured at 1 second after immersing a piece of the recording paper with an area of 0.05 m2 in 40 ml of pure water.
摘要翻译：本发明提供一种记录纸，其包含纸浆纤维和填料作为主要成分，并且在记录纸的表面中至少含有阳离子物质和水溶性聚合物，其中水的电导率不小于0.002S / m 在将一块面积为0.05m 2的记录纸浸入40ml纯水中1秒后。

9. 发明申请

US20090191721A1 SEQUENTIAL TANTALUM-NITRIDE DEPOSITION 失效
标题翻译：顺序硝酸盐沉积
公开(公告)号：US20090191721A1
公开(公告)日：2009-07-30
申请号：US12018813
申请日：2008-01-24
申请人： Frank M. Cerio, JR. , Shigeru Mizuno , Tsukasa Matsuda , Adam Selsey
发明人： Frank M. Cerio, JR. , Shigeru Mizuno , Tsukasa Matsuda , Adam Selsey
IPC分类号： H01L21/31
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/32 , C23C14/541 , H01L21/2855 , H01L21/76846 , H01L21/76865
摘要： An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.
摘要翻译： iPVD系统被编程为在真空室内使用多步骤的方法将均匀的材料（例如阻挡材料）沉积在半导体衬底上的高纵横比纳米尺寸特征中，这增强了与场和底部覆盖（s ）同时最小化或消除突出。

10. 发明授权

US07515264B2 Particle-measuring system and particle-measuring method 有权
标题翻译：粒子测量系统和粒子测量方法
公开(公告)号：US07515264B2
公开(公告)日：2009-04-07
申请号：US10321646
申请日：2002-12-18
申请人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
发明人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
IPC分类号： G01N21/00
CPC分类号： G01N1/24 , C23C16/4405 , C23C16/4412 , G01N15/06 , G01N2015/0693 , H01L21/67069 , H01L21/67115 , H01L21/67253 , H01L21/68742 , Y10T137/8593 , Y10T137/87652 , Y10T137/8766
摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.
摘要翻译：本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。

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