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1. 发明专利

JP2006198051A Gum massaging implement 审中-公开
标题翻译： GUM MASSAGING实施
公开(公告)号：JP2006198051A
公开(公告)日：2006-08-03
申请号：JP2005011193
申请日：2005-01-19
申请人： Takayuki Tamura , 剛之田村
发明人： TAMURA TAKAYUKI
IPC分类号： A61H13/00
摘要： PROBLEM TO BE SOLVED: To provide a gum massaging implement having preventive and improving effects of the periodontal disease by massaging the gums.
SOLUTION: This gum massaging implement comprises a grip part, support parts branched from the upper end of the grip part, and operation parts provided at tip front faces of the respective support parts and having contact parts formed into smooth curved shape; is characterized in that the respective operation parts are disposed in positions simultaneously coming into contact with the upper/lower gums respectively; and the whole body is formed of a resin material having superior deterioration resistance.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过按摩牙龈提供具有预防和改善牙周病的效果的牙龈按摩器具。解决方案：该牙根按摩器具包括握持部，从把持部的上端分支的支撑部，以及设置在各支撑部的前端面的操作部，并具有形成为平滑弯曲形状的接触部; 其特征在于，各个操作部分分别设置在同时与上/下牙龈接触的位置中; 全体由耐劣化性优异的树脂材料形成。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006212170A Mud guard tool for footwear 审中-公开
标题翻译： MUD GUARD工具鞋
公开(公告)号：JP2006212170A
公开(公告)日：2006-08-17
申请号：JP2005027288
申请日：2005-02-03
申请人： Takayuki Tamura , 剛之田村
发明人： TAMURA TAKAYUKI
IPC分类号： A43B21/22
摘要： PROBLEM TO BE SOLVED: To provide a mud guard tool for footwear capable of preventing a part from the bottom to the calf from being wetted and stained where it is wetted and stained first at the time of walking or lightly running in rain or on a wet road or the like, being easily detached and being easily used.
SOLUTION: The mud guard tool for the footwear is composed of a mounting body 1 to be attached to the heel part of optional footwear and a mud guard provided through an attaching mechanism to be turnably attached to the mounting body, and the attaching mechanism position-adjustably turns the mud guard to a position for receiving mud splash generated at the time of walking so as not to reach the footwear and a position along the footwear. Thus, wetting and staining from the bottom to the calf generated at the time of walking or lightly running in rain or on a wet road or the like are prevented.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于鞋类的防泥工具，其能够防止从底部到小腿的一部分被湿润并被染色，其在被湿润并且在步行或在雨中轻微运行时首先染色，或在潮湿的道路等上容易分离并易于使用。解决方案：用于鞋类的防泥工具由安装在可选鞋类的脚跟部分上的安装体1和通过安装机构提供的可转动地安装在安装体上的防泥板组成，机构位置 - 可调整地将泥浆防护罩转到用于接收在步行时产生的泥浆飞溅的位置，以便不到达鞋类和沿着鞋类的位置。因此，防止了在步行或在雨中或潮湿的路面上轻轻地运行时从底部到小腿的湿润和染色。版权所有（C）2006，JPO＆NCIPI

3. 发明授权

US08219882B2 Memory card and memory controller 失效
标题翻译：存储卡和存储控制器
公开(公告)号：US08219882B2
公开(公告)日：2012-07-10
申请号：US12125042
申请日：2008-05-21
申请人： Takayuki Tamura , Hirofumi Shibuya , Hiroyuki Goto , Shigemasa Shiota , Yasuhiro Nakamura
发明人： Takayuki Tamura , Hirofumi Shibuya , Hiroyuki Goto , Shigemasa Shiota , Yasuhiro Nakamura
IPC分类号： G11C29/00
CPC分类号： G06F11/1068
摘要： A memory card includes a non-volatile memory, a memory controller for controlling the operation of the memory card. The memory controller is capable of providing an interface with outside according to a predetermined protocol, and performs error detection and correction of the memory information at regular time intervals or at the timing of connection of electric power supply, independently of reading out the memory information according to external access request. Therefore, it is possible to improve reliability of data retention in the non-volatile memory without the host device reading out the memory information from the non-volatile memory of the memory card.
摘要翻译：存储卡包括非易失性存储器，用于控制存储卡的操作的存储器控制器。存储器控制器能够根据预定协议向外部提供接口，并且以规定的时间间隔或在电力供应连接的定时执行存储器信息的错误检测和校正，而不依赖于读出存储器信息到外部访问请求。因此，无需主机装置从存储卡的非易失性存储器中读出存储器信息，可以提高非易失性存储器中的数据保持的可靠性。

4. 发明授权

US08134869B2 Semiconductor memory having electrically erasable and programmable semiconductor memory cells 有权
标题翻译：具有电可擦除和可编程的半导体存储器单元的半导体存储器
公开(公告)号：US08134869B2
公开(公告)日：2012-03-13
申请号：US13206574
申请日：2011-08-10
申请人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
摘要翻译：一种可电气可变的非易失性多级存储器件和操作这种器件的方法，其包括将至少一个存储器单元的状态设置为从包括至少第一至第四电平状态的多个状态中选择的一种状态响应于要存储在一个存储器单元中的信息，并且通过利用在第二和第二电平状态之间设置的第一参考电平来读取存储单元的状态来确定读出状态是否对应于第一至第四电平状态之一第三电平状态，在第一和第二电平状态之间设置的第二参考电平和在第三和第四电平状态之间设置的第三参考电平。

5. 发明申请

US20110292727A1 SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS 有权
标题翻译：具有电可擦除和可编程半导体存储器单元的半导体存储器
公开(公告)号：US20110292727A1
公开(公告)日：2011-12-01
申请号：US13206574
申请日：2011-08-10
申请人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro Katayama , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/10
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
摘要翻译：一种可电气可变的非易失性多级存储器件和操作这种器件的方法，其包括将至少一个存储器单元的状态设置为从包括至少第一至第四电平状态的多个状态中选择的一种状态响应于要存储在一个存储器单元中的信息，并且通过利用在第二和第二电平状态之间设置的第一参考电平来读取存储单元的状态来确定读出状态是否对应于第一至第四电平状态之一第三电平状态，在第一和第二电平状态之间设置的第二参考电平和在第三和第四电平状态之间设置的第三参考电平。

6. 发明授权

US08054743B2 Mobile communication terminal, communication apparatus, mobile communication method, and communication method 有权
标题翻译：移动通信终端，通信装置，移动通信方式以及通信方式
公开(公告)号：US08054743B2
公开(公告)日：2011-11-08
申请号：US12189431
申请日：2008-08-11
申请人： Hosei Matsuoka , Takayuki Tamura
发明人： Hosei Matsuoka , Takayuki Tamura
IPC分类号： G01R31/08 , H04W4/00 , H04J3/16
CPC分类号： H04W36/28 , H04L69/14 , H04L69/324 , H04W36/36
摘要： An object of the present invention is to make it possible to appropriately maintain PPP-based communications even in an environment in which the terminal moves and the communication environment continually changes. A mobile communication terminal comprises a plurality of wireless accessing devices for establishing PPP-based communication links for respectively different modes of wireless communications with a fixed communication apparatus, which is a communication partner; a PPP device for combining the established communication links; and a valid wireless LAN searching portion for detecting that wireless communication is possible for a wireless LAN adapter. The PPP device executes control so as to establish communication links for the wireless LAN adapter detected as being capable of wireless communication, and for a L2TP virtual device.
摘要翻译：本发明的目的在于，即使在终端移动的环境和通信环境持续变化的情况下，也可以适当地维护基于PPP的通信。一种移动通信终端包括：多个无线接入装置，用于分别与作为通信伙伴的固定通信装置的不同模式的无线通信建立基于PPP的通信链路; 用于组合建立的通信链路的PPP设备; 以及用于检测无线LAN适配器的无线通信的有效的无线LAN搜索部分。 PPP设备执行控制，以建立被检测为能够进行无线通信的无线LAN适配器和L2TP虚拟设备的通信链路。

7. 发明授权

US07616485B2 Semiconductor memory device having faulty cells 失效
公开(公告)号：US07616485B2
公开(公告)日：2009-11-10
申请号：US11931881
申请日：2007-10-31
申请人： Kunihiro Katayama , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
发明人： Kunihiro Katayama , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C16/349 , G11C29/76 , G11C29/88
摘要： In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.

8. 发明授权

US07581058B2 Non-volatile memory having multiple erase operations 有权
标题翻译：具有多次擦除操作的非易失性存储器
公开(公告)号：US07581058B2
公开(公告)日：2009-08-25
申请号：US11963913
申请日：2007-12-24
申请人： Yoshinori Takase , Keiichi Yoshida , Takashi Horii , Atsushi Nozoe , Takayuki Tamura , Tomoyuki Fujisawa , Ken Matsubara
发明人： Yoshinori Takase , Keiichi Yoshida , Takashi Horii , Atsushi Nozoe , Takayuki Tamura , Tomoyuki Fujisawa , Ken Matsubara
IPC分类号： G06F12/06
CPC分类号： G06F12/0246 , G06F12/0893 , G06F2212/2022 , G06F2212/7203 , G11C16/06 , G11C16/10 , G11C16/26 , G11C2216/22
摘要： A non-volatile storage device (1) has non-volatile memory units (FARY0 to FARY3), buffer units (BMRY0 to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside. Consequently, it is possible to reduce the overhead of a data transfer for reading/writing data from/to the non-volatile storage device.
摘要翻译：非易失性存储设备（1）具有非易失性存储单元（FARY0至FARY3），缓冲单元（BMRY0至BMRY3）和控制单元（CNT）），控制单元可以控制外部和所述缓冲器单元以及当从所述外部分别接收到指令时，所述非易失性存储器单元和所述缓冲器单元之间的第二访问处理。控制单元可以分别根据从外部发送的指令独立地对非易失性存储器单元和缓冲单元执行访问控制。因此，可以与非易失性存储器单元的擦除操作同时地将缓冲单元的下一个写入数据设置为缓冲单元，或者按照高速缓存存储器操作中的高速将高速存储信息一次性地输出到缓冲器单元指令从外面发出。因此，可以减少用于从/向非易失性存储装置读/写数据的数据传输的开销。

9. 发明申请

US20090012318A1 Cage-shaped cyclobutanoic dianhydrides and process for production thereof 有权
标题翻译：笼形环丁酸二酐及其生产方法
公开(公告)号：US20090012318A1
公开(公告)日：2009-01-08
申请号：US11665024
申请日：2005-10-18
申请人： Hideo Suzuki , Takayuki Tamura
发明人： Hideo Suzuki , Takayuki Tamura
IPC分类号： C07D493/08 , C07C67/08 , C07D493/04 , C07C69/74 , C07C61/04 , C07C51/083 , C07C67/333
CPC分类号： C07C67/11 , C07C51/09 , C07C51/56 , C07C67/08 , C07C67/12 , C07C67/333 , C07C69/74 , C07C2601/04 , C07D493/04 , C07D493/08 , C07C61/04
摘要： A process which comprises reacting a 1,2,3,4-cyclobutanetetracarboxylic-1,2:3,4-dianhydride [1] with an alcohol [2] in the presence of an acid catalyst to obtain a compound [3], isomerizing the compound [3] with a base catalyst into a compound [4], reacting the compound [4] with an organic acid to obtain a compound [5], and reacting the compound [5] with a dehydrating agent to obtain a 1,2,3,4-cyclobutanetetracarboxylic-1,3:2,4-dianhydride: wherein R1 and R2 are each independently hydrogen, halogeno, alkyl of 1 to 10 carbon atoms, halogenated alkyl of 1 to 10 carbon atoms, cycloalkyl of 3 to 8 carbon atoms, phenyl, or cyano; and R3 is alkyl of 1 to 10 carbon atoms.
摘要翻译：一种方法包括在酸催化剂存在下使1,2,3,4-环丁烷四羧酸-1,2：3,4-二酐[1]与醇[2]反应，得到化合物[3]，异构化化合物[3]与碱催化剂合成化合物[4]，使化合物[4]与有机酸反应，得到化合物[5]，并使化合物[5]与脱水剂反应，得到1， 2,3,4-环丁烷四羧酸-1,3：2,4-二酐：其中R1和R2各自独立地为氢，卤代，1-10个碳原子的烷基，1-10个碳原子的卤代烷基，3〜 8个碳原子，苯基或氰基; 并且R 3是1至10个碳原子的烷基。

10. 发明申请

US20080037322A1 SEMICONDUCTOR MEMORY HAVING ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELLS 失效
标题翻译：具有电可擦除和可编程半导体存储器单元的半导体存储器
公开(公告)号：US20080037322A1
公开(公告)日：2008-02-14
申请号：US11870196
申请日：2007-10-10
申请人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
发明人： Kunihiro KATAYAMA , Takayuki Tamura , Kiyoshi Inoue
IPC分类号： G11C16/04
CPC分类号： G11C16/28 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30 , G11C2211/5621 , G11C2211/5632 , G11C2211/5634 , G11C2211/5641 , G11C2211/5642
摘要： An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.
摘要翻译：一种可电气可变的非易失性多级存储器件和操作这种器件的方法，其包括将至少一个存储器单元的状态设置为从包括至少第一至第四电平状态的多个状态中选择的一种状态响应于要存储在一个存储器单元中的信息，并且通过利用在第二和第二电平状态之间设置的第一参考电平来读取存储单元的状态来确定读出状态是否对应于第一至第四电平状态之一第三电平状态，在第一和第二电平状态之间设置的第二参考电平和在第三和第四电平状态之间设置的第三参考电平。

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