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    • 1. 发明授权
    • Bag with anti-theft function cross reference to related application
    • 手提袋具有防盗功​​能,交叉参考相关应用
    • US09345300B2
    • 2016-05-24
    • US14297560
    • 2014-06-05
    • Sang Il Park
    • Sang Il Park
    • G08B13/14A45C13/18
    • A45C13/18A45C13/20E05B65/52E05B73/0005G08B13/14G08B13/149
    • Disclosed herein is a bag with an anti-theft function which is used to temporarily store various valuables (a wallet, a cellular phone, a camera, a watch, etc.) or clothes in a crowded place, for example, a water play area such as a beach or a water park, and is configured such that the stored valuables or the bag itself can be prevented from being stolen. The bag according to the present invention includes an anti-theft device which fastens first and second zippers that openably close an opening of the bag body to each other and binds the bag body to a surrounding structure, whereby valuables (a wallet, a cellular phone, a camera, a watch, etc.) stored in the bag body not only can be prevented from being stolen but the bag itself can also be prevented from being stolen because it is bound to the surrounding structure.
    • 本文公开了一种具有防盗功​​能的袋子,其用于临时存储各种贵重物品(钱包,手机,相机,手表等)或衣服在拥挤的地方,例如水上游乐区域 例如海滩或水上公园,并且被配置为使得可以防止存储的贵重物品或袋本身被盗。 根据本发明的袋子包括一个防盗装置,该防盗装置将第一和第二拉链紧固在一起,使第一和第二拉链可打开地将袋体的开口彼此靠近并将袋体绑在周围的结构上,由此贵重物品(钱包,蜂窝电话 ,相机,手表等)不仅可以防止被盗,而且还可以防止袋本身因为与周围结构的束缚而被盗。
    • 8. 发明授权
    • Semiconductor memory device having a reduced noise interference
    • 具有降低的噪声干扰的半导体存储器件
    • US08279694B2
    • 2012-10-02
    • US12826918
    • 2010-06-30
    • Duck Hwa HongSang Il Park
    • Duck Hwa HongSang Il Park
    • G11C16/04
    • G11C11/4091G11C7/02G11C7/06G11C7/08
    • A semiconductor memory device having a reduced noise interference is presented. The semiconductor memory device includes a first switch and a second switch. The first switch is disposed in a sub hole region or an edge region and is configured to be turned on in response to a first pre-control signal, which is enabled before a time point at which a sense amplifier array begins to operate, and to apply an external voltage to a first voltage line through which a bias voltage is supplied to the sense amplifier array. The second switch is configured to be turned on in response to a first control signal, which is enabled in a sense amplifier overdriving period, and to apply the external voltage to the first voltage line.
    • 提出了具有降低的噪声干扰的半导体存储器件。 半导体存储器件包括第一开关和第二开关。 第一开关设置在子孔区域或边缘区域中,并且被配置为响应于在读出放大器阵列开始运行的时间点之前使能的第一预控制信号而导通,以及 将外部电压施加到向读出放大器阵列提供偏置电压的第一电压线。 第二开关被配置为响应于在感测放大器过驱动周期中被使能的第一控制信号而导通,并且将外部电压施加到第一电压线。