专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100157662A1 MRAM AND METHOD FOR WRITING IN MRAM 审中-公开
标题翻译： MRAM和MRAM写入方法
公开(公告)号：US20100157662A1
公开(公告)日：2010-06-24
申请号：US11919189
申请日：2006-04-26
申请人： Teruo Ono , Akinobu Yamaguchi , Saburo Nasu
发明人： Teruo Ono , Akinobu Yamaguchi , Saburo Nasu
IPC分类号： G11C11/00 , G11C11/14 , G11C7/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C5/063 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01L27/0207 , H01L27/228
摘要： In one embodiment of the present invention, an MRAM is an MRAM including: a plurality of write word lines; a plurality of bit lines provided so as to intersect with the write word lines; and TMR elements provided at respective intersections of the write word lines and the bit lines. Each of the TMR elements includes a first ferromagnetic layer of which magnetization direction is variable, a second ferromagnetic layer of which magnetization direction is fixed, and a tunnel wall which is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The bit line is provided, for example, so as to bulge in the direction in which the write word line extends at the intersection of the bit line and the write word line, so that a magnetic wall is introduced at a desired position of the bit line. Further, a current fed through the bit line is fed through the first ferromagnetic layer at the time of data writing. This makes it possible to provide the MRAM having a gigabit-class capacity.
摘要翻译：在本发明的一个实施例中，MRAM是MRAM，包括：多个写入字线; 设置成与写入字线相交的多个位线; 并且TMR元件设置在写字线和位线的各个交叉处。每个TMR元件包括其磁化方向可变的第一铁磁层，固定有磁化方向的第二铁磁层和夹在第一铁磁层和第二铁磁层之间的隧道壁。例如，位线被设置为沿写入字线在位线和写入字线的交点处延伸的方向凸起，使得磁性壁被引入位的期望位置线。此外，在数据写入时，通过位线馈送的电流被馈送通过第一铁磁层。这使得可以提供具有千兆级容量的MRAM。

IPRDB

热门服务

关于我们

友情链接

联系方式