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1. 发明申请

WO1996002069A1 STORAGE CONTAINER FOR SEMICONDUCTOR CRYSTAL 审中-公开
标题翻译：半导体晶体储存容器
公开(公告)号：WO1996002069A1
公开(公告)日：1996-01-25
申请号：PCT/JP1995001357
申请日：1995-07-07
申请人： SHIN-ETSU HANDOTAI CO., LTD. , NAOETSU DENSHI KOGYO KABUSHIKI KAISHA , YUGEN KAISHA KATO YOKI , MATSUO, Shinichi , FUJIMAKI, Nobuyoshi , WATANABE, Shiroyasu , KATO, Kintaro
发明人： SHIN-ETSU HANDOTAI CO., LTD. , NAOETSU DENSHI KOGYO KABUSHIKI KAISHA , YUGEN KAISHA KATO YOKI
IPC分类号： H01L21/68
CPC分类号： H01L21/67366 , B65D11/188 , B65D21/0234 , H01L21/67379 , H01L21/67386
摘要： A container is molded to a box type structure out of an elastic material, such as polyethylene terephthalate, and this container is provided at an upper edge portion thereof with a locking projection, a guide projection, a guide recess and a locking recess, and in an inner surface thereof with a downwardly bulging portion for setting and storing a semiconductor crystal therein, the container being further provided with a vertical portion standing up higher than an outer circumference of an arcuate surface of the crystal storage bulging portion. A semiconductor crystal is placed in one of two such containers, and the other is put on the resultant container so that the guide projections and guide recesses and locking projections and locking recesses are engaged with each other. Consequently, the semiconductor crystal is housed under pressure in the container unit owing to the elastic force of the crystal storage bulging portions.
摘要翻译：容器通过诸如聚对苯二甲酸乙二醇酯的弹性材料模制成盒型结构，并且该容器在其上边缘部分处设置有锁定突起，引导突起，引导凹部和锁定凹部，并且其内表面具有用于在其中设置和存储半导体晶体的向下凸出部分，所述容器还设置有竖立高于所述晶体存储凸出部分的弧形表面的外周的竖直部分。将半导体晶体放置在两个这样的容器中的一个中，另一个放置在合成的容器上，使得引导突起和引导凹部和锁定突起和锁定凹部彼此接合。因此，由于晶体储存凸起部分的弹性力，半导体晶体在压力下容纳在容器单元中。

2. 发明申请

WO1997033306A1 HEAT TREATMENT METHOD AND SINGLE-CRYSTAL SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：热处理方法和单晶半导体基板
公开(公告)号：WO1997033306A1
公开(公告)日：1997-09-12
申请号：PCT/JP1997000143
申请日：1997-01-23
申请人： SHIN-ETSU HANDOTAI CO., LTD. , HABUKA, Hitoshi
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： H01L21/26
CPC分类号： H01L21/67115 , H01L21/324 , H01L21/67109
摘要： A heat treatment method by which single-crystal semiconductor substrates are made uniform in crystalline quality by keeping their temperature constant during a heat treatment. In the method, substrates are heat-treated by directly heating at least their rear surface with radiant heat, and the heating output is controlled in accordance with the reflectance of the rear surface of the substrate.
摘要翻译：通过在热处理期间保持其温度恒定，使单晶半导体基板在结晶质量上均匀的热处理方法。在该方法中，通过用辐射热至少直接加热其背面来对基板进行热处理，并且根据基板的背面的反射率来控制加热输出。

3. 发明申请

WO1997032060A1 PROCESS FOR PREPARING SEMICONDUCTOR MONOCRYSTALLINE THIN FILM 审中-公开
标题翻译：制备半导体单晶薄膜的方法
公开(公告)号：WO1997032060A1
公开(公告)日：1997-09-04
申请号：PCT/JP1997000619
申请日：1997-02-28
申请人： SHIN-ETSU HANDOTAI CO., LTD. , HABUKA, Hitoshi
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B25/16
CPC分类号： C30B29/06 , C30B25/16 , C30B25/18 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A process for preparing a semiconductor monocrystalline thin film by feeding a reducing gas onto the surface of a semiconductor monocrystalline substrate to pretreat the substrate for removing an oxide film from the surface of the substrate, and then feeding a reaction gas onto the surface of the substrate to effect vapor growth, wherein the P2 to P1 ratio, wherein P1 represents the atmospheric pressure in the reactor in the step of pretreatment and P2 represents the maximum atmospheric pressure in the reactor which reaches in a period between the completion of the step of pretreatment and the initiation of the step of vapor growth, is brought to at least 10. For example, when a silicon monocrystalline thin film is grown on a silicon monocrystalline substrate, P1 is brought to 0.1 atm (absolute pressure), while P2 is brought to 1 atm (absolute pressure). This enables the production of an epitaxial growth substrate by vapor growth, wherein the dopant concentration is steeply varied in the interface between the substrate and the thin film.
摘要翻译：一种制备半导体单晶薄膜的方法，该方法是将还原气体送到半导体单晶衬底的表面上，以预处理衬底以从衬底的表面去除一氧化膜，然后将反应气体送至衬底的表面上以实现气相生长，其中P2至P1的比率，其中P1表示在预处理步骤中反应器中的大气压，P2表示反应器中在预处理步骤完成和完成步骤之间的时间段内的最大大气压气化生长步骤的开始至少为10.例如，当在单晶硅衬底上生长硅单晶薄膜时，使P1达到0.1atm（绝对压力），而P2达到1 atm（绝对压力）。这使得能够通过气相生长生产外延生长衬底，其中掺杂剂浓度在衬底和薄膜之间的界面中急剧变化。

4. 发明申请

WO1997030195A1 APPARATUS AND METHOD FOR PRODUCING CRYSTALS BY THE CZOCHRALSKI METHOD AND CRYSTALS PRODUCED BY THIS METHOD 审中-公开
标题翻译：用CZOCHRALSKI法生产水晶的方法和方法和通过该方法生产的晶体
公开(公告)号：WO1997030195A1
公开(公告)日：1997-08-21
申请号：PCT/JP1997000359
申请日：1997-02-12
申请人： SHIN-ETSU HANDOTAI CO., LTD. , SAKURADA, Masahiro , MIYAHARA, Yuichi , OHTA, Tomohiko
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B15/00
CPC分类号： C30B15/14 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/44
摘要： A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and heat insulating tube disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating tube that is located above an upper end of the heater is so configured that its inside diameter is larger than the outside diameter of the heater at its lower end, and that its inside diameter at its upper end is equal to or less than the inside diameter of the heater while its outside diameter is equal to or greater than the outside diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution there inside or the thermal history of crystals.
摘要翻译：用Czochralski法制造晶体的方法和装置，由此可以容易且准确地控制根据CZ方法的晶体生长期间的热历史。该装置包括用于接收原料的坩埚，用于加热和熔化原料的加热器，以及围绕坩埚和加热器设置的绝热管，其中位于上部上方的绝热管的一部分加热器的端部被配置为使得其内径大于其下端的加热器的外径，并且其上端的内径等于或小于加热器的内径，而其外径等于或大于加热器的外径。该装置用于生产晶体并控制其内部的温度分布或晶体的热历史。

5. 发明申请

WO1997034318A1 HEAT-TREATING METHOD AND RADIANT HEATING DEVICE 审中-公开
标题翻译：热处理方法和辐射加热装置
公开(公告)号：WO1997034318A1
公开(公告)日：1997-09-18
申请号：PCT/JP1997000734
申请日：1997-03-10
申请人： SHIN-ETSU HANDOTAI CO., LTD. , TATE, Naoto , SAKAI, Tomoyuki , TODA, Naohisa , HABUKA, Hitoshi
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： H01L21/205
CPC分类号： H01L21/67248 , C30B31/18 , H01L21/324 , H01L21/67115 , H01L22/26
摘要： A heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated after the object is heated to an actually desired temperature regardless of the dopant concentration or resistivity of the object at the time of heat-treating the object with a radiant heating device using a radiation thermometer as a temperature detector. In this method, the object is heat-treated after the object is heated to the actually desired temperature by correcting the temperature of the object in accordance with the dopant concentration or resistivity of the object. In addition, the radiant heating device is constituted in such a way that the dopant concentration or resistivity of the object is inputted in advance to a temperature controller and the controller calculates the actual temperature of the object by correcting and computing the temperature of the object detected with the above-mentioned radiation thermometer in accordance with the dopant concentration or resistivity of the object and controls the temperature of the object based on the calculated temperature value.
摘要翻译：不管加热时的物体的掺杂剂浓度或电阻率如何，热处理方法和辐射加热装置可以在物体被加热到实际所需温度之后对其进行热处理的热处理对象。使用辐射温度计作为温度检测器用辐射加热装置处理物体。在该方法中，通过根据物体的掺杂剂浓度或电阻率校正物体的温度，在物体被加热到实际所需温度之后对物体进行热处理。此外，辐射加热装置以使得物体的掺杂剂浓度或电阻率预先输入到温度控制器的方式构成，并且控制器通过校正和计算检测到的物体的温度来计算物体的实际温度与上述辐射温度计根据物体的掺杂剂浓度或电阻率，并基于计算出的温度值来控制物体的温度。

6. 发明申请

WO1997033305A1 SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON THIN FILM 审中-公开
标题翻译：硅单晶和单晶硅薄膜生产工艺
公开(公告)号：WO1997033305A1
公开(公告)日：1997-09-12
申请号：PCT/JP1997000716
申请日：1997-03-07
申请人： SHIN-ETSU HANDOTAI CO., LTD. , HABUKA, Hitoshi
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： H01L21/205
CPC分类号： C30B29/06 , C30B15/00 , C30B25/02 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A first layer having the same conductivity as that of a CZ substrate and having nearly the same dopant concentration as that of the CZ substrate is vapor-grown directly on the substrate, after the gas is purged by changing the pressure, a second layer having the same conductivity as that of the substrate and having a dopant concentration which is about one-thousandth lower than that of the substrate is vapor-grown. Therefore, a single-crystal silicon thin film which contains no crystal fault and in which the dopant concentration abruptly changes at the boundary between the film and the high-concentration layer can be vapor-grown through a simple inexpensive process.
摘要翻译：将具有与CZ基板相同的导电性并且具有与CZ基板的掺杂剂浓度几乎相同的导电性的第一层在基板上直接气相生长，在通过改变压力吹扫气体之后，将具有气相生长具有与衬底相同的导电性并且具有比衬底的掺杂浓度大约几千分之一的掺杂剂浓度的导电性。因此，通过简单廉价的方法，可以蒸镀生长不含晶体缺陷，并且掺杂剂浓度在膜和高浓度层之间的边界处突然变化的单晶硅薄膜。

7. 发明申请

WO1997026392A1 PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL REDUCED IN CRYSTAL DEFECT AND SILICON SINGLE CRYSTAL PRODUCED BY THE PROCESS 审中-公开
标题翻译：生产晶体缺陷的硅单晶减少工艺和工艺生产的硅单晶
公开(公告)号：WO1997026392A1
公开(公告)日：1997-07-24
申请号：PCT/JP1997000089
申请日：1997-01-17
申请人： SHIN-ETSU HANDOTAI CO., LTD. , TAKANO, Kiyotaka , IIDA, Makoto , IINO, Eiichi , KIMURA, Masanori , YAMAGISHI, Hirotoshi
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/206
摘要： A silicon single crystal improved in the dielectric strength of oxide film is produced by the Czochralski method at a high efficiency. In the process, each silicon single crystal in the stage of crystal growth is regulated so that the time required for the silicon to pass through temperature ranges of from 1,250 to 1,200 DEG C is 10 to 20 minutes.
摘要翻译：通过Czochralski法以高效率生产氧化膜的介电强度提高的硅单晶。在此过程中，调节晶体生长阶段中的每个硅单晶，使得硅通过1,250-1200℃的温度范围所需的时间为10至20分钟。

8. 发明申请

WO1997021853A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND PROCESS 审中-公开
标题翻译：单晶生产设备和工艺
公开(公告)号：WO1997021853A1
公开(公告)日：1997-06-19
申请号：PCT/JP1995002514
申请日：1995-12-08
申请人： SHIN-ETSU HANDOTAI CO., LTD. , OHTA, Tomohiko , SONOKAWA, Susumu , SOETA, Satoshi , KODAMA, Yoshihiro
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B15/00
CPC分类号： C30B29/40 , C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： An apparatus and process for producing single crystals according to the Czochralski method for pulling up crystals, wherein the production efficiency and qualities of the crystals can be improved by freely controlling the temperature distribution and heat history of the crystals to be pulled up. The invention relates to a production apparatus according to the Czochralski method provided with a cylinder (19) that is airtightly joined to the ceiling of a lift chamber at the upper end thereof and is closed up to the surface of a melt in a crucible at the lower end thereof and that surrounds coaxially the pulled single crystal bar, and is characterized in that the lower end of the cylinder is provided with a heat-barrier body (25) occupying 30-95 vol.% of the space that is enclosed by the crystal surface, the inner wall of a quartz crucible and the surface of a melt and has a height corresponding to the radius of the crystal to be pulled up from the melt; a process for producing single crystals with the use of the above apparatus; a method of controlling the temperature distribution and heat history of the crystals thus pulled up; and single crystals thus produced. As the apparatus is provided with a heat-barrier body (25) having a sufficient barrier effect, it does not cause any lowering in the velocity of pulling even when the diameter of the pulled single crystal is increased, can uniform the temperature at the whole solid-liquid boundary, does not lower the convention into singl crystals, and can control readily and accurately the temperature distribution and heat history of the crystals to be pulled up.
摘要翻译：用于提取晶体的根据Czochralski法制造单晶的装置和方法，其中可以通过自由地控制要拉起的晶体的温度分布和热历史来提高晶体的生产效率和质量。本发明涉及一种根据切克劳斯基法的生产设备，其具有气缸（19），该气缸（19）在其上端处气密地接合到提升室的天花板上，并在坩埚内的熔体表面封闭其下端并且同轴地围绕拉出的单晶棒，并且其特征在于，圆筒的下端设置有占据30-95体积％的空间的隔热体（25），该隔热体晶体表面，石英坩埚的内壁和熔体的表面，并且具有与从熔体拉起的晶体的半径相对应的高度; 使用上述装置制造单晶的方法; 控制由此提升的晶体的温度分布和热历史的方法; 和由此产生的单晶。由于该装置设置有具有足够的阻挡效果的隔热体（25），所以即使拉伸的单晶的直径增加也不会引起拉伸速度的任何降低，整体温度可以均匀固液边界，不能将惯例降低为单晶，并且可以容易地和准确地控制要拉起的晶体的温度分布和热历史。

9. 发明申请

WO1996033301A1 METHOD AND EQUIPMENT FOR GROWING SINGLE CRYSTALS 审中-公开
标题翻译：用于生长单晶的方法和设备
公开(公告)号：WO1996033301A1
公开(公告)日：1996-10-24
申请号：PCT/JP1996001089
申请日：1996-04-22
申请人： SHIN-ETSU HANDOTAI CO., LTD. , IINO, Eiichi , NAKAMURA, Yasushi , OTSUKA, Seiichiro , MIDZUISHI, Koji , KIMURA, Masanori , YAMAGISHI, Hirotoshi
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , C30B15/22 , Y10S117/90 , Y10S117/911 , Y10T117/1032
摘要： A method and equipment for growing single crystals according to the so-called Czochralski process. The method comprises attaching a seed crystal (12) to the tip of a wire (41a) of a lifting device (41), pulling up a single crystal portion (15) for crystal growth while engaging an arm-shaped member (44a) of a supporting device (44) with a recess (16) of unevennesses (14) formed on the side of the single crystal portion (15), synchronizing the pulling rate of the member (44a) with that of the wire (41a) to smoothen the cooperation of the both, and pulling up the single crystal portion (15) at a constant pulling rate. Heavy single crystals can safely be pulled up without causing dislocation while minimizing the shock to the growing crystals.
摘要翻译：根据所谓的Czochralski工艺生长单晶的方法和设备。该方法包括将晶种（12）附接到升降装置（41）的导线（41a）的尖端，拉动用于晶体生长的单晶部分（15），同时将臂状构件（44a）具有形成在所述单晶部分（15）侧的不平坦凹部（14）的支撑装置（44），使所述部件（44a）与所述导线（41a）的拉拔速度同步以使所述线两者的协调，并且以恒定的拉伸速率拉起单晶部分（15）。重的单晶可以安全地拉起而不会发生错位，同时最小化生长晶体的冲击。

10. 发明申请

WO1997036025A1 PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL 审中-公开
标题翻译：生产硅单晶的工艺
公开(公告)号：WO1997036025A1
公开(公告)日：1997-10-02
申请号：PCT/JP1997000993
申请日：1997-03-25
申请人： SHIN-ETSU HANDOTAI CO., LTD. , IINO, Eiichi , KIMURA, Masanori , MURAOKA, Shozo
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/00 , C30B15/305 , C30B29/36 , Y10S117/917
摘要： In a process for producing a silicon single crystal by an MCZ method, the pull-up of a silicon single crystal is performed under conditions which satisfy the following relations: 0.4 , and v2 v1 + 1.35 x 10 , where v1 is the crystal growth speed (mm/min), and v2 is the crystal periphery speed (mm/min) when the crystal is pulled up while being rotated. A large-diameter silicon single crystal is produced by the MCZ method without causing any twist in the crystal.
摘要翻译：在通过MCZ方法制造硅单晶的工艺中，在满足以下关系的条件下进行硅单晶的上拉：0.4

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