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1. 发明申请

US20050126920A1 Method and apparatus for electrochemical processing 审中-公开
标题翻译：电化学处理方法和装置
公开(公告)号：US20050126920A1
公开(公告)日：2005-06-16
申请号：US10953888
申请日：2004-09-29
申请人： Oleg Sulima
发明人： Oleg Sulima
IPC分类号： C25D5/02 , H01L21/316 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , C25D5/02 , H01L21/02178 , H01L21/02233 , H01L21/02238 , H01L21/02241 , H01L21/02258 , H01L21/28264 , H01L21/31679 , H01L31/1844 , H01L31/1868 , Y02E10/544 , Y02P70/521
摘要： A method of electrochemically processing an article having a semi-insulating element and a conducting element comprises forming a conductive layer on the article, the conductive layer comprising at least a first region covering at least a portion of the semi-insulating element and a second region covering at least a portion of the conducting element; gripping with at least one conductive gripper a portion of the first region; submerging at least a portion of the second region in an electrolyte while keeping the conductive gripper out of said electrolyte; and conducting current through a circuit comprising the conducting element, the conductive layer, the conductive gripper, and an electrode submerged in the electrolyte. The conductive layer is preferably formed by diffusing a dopant from a vapor phase.
摘要翻译：一种电化学处理具有半绝缘元件和导电元件的制品的方法包括在所述制品上形成导电层，所述导电层至少包括覆盖半绝缘元件的至少一部分的第一区域和第二区域覆盖所述导电元件的至少一部分; 用至少一个导电夹持器夹持第一区域的一部分; 将导电夹持器保持在所述电解质外，将电解质中的第二区域的至少一部分浸入; 并且通过包括导电元件，导电层，导电夹持器和浸没在电解质中的电极的电路传导电流。导电层优选通过从气相扩散掺杂剂而形成。

2. 发明申请

US20130160810A1 PHOTOVOLTAIC DEVICE AND METHOD OF MAKING 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20130160810A1
公开(公告)日：2013-06-27
申请号：US13334177
申请日：2011-12-22
申请人： Bastiaan Arie Korevaar , James Neil Johnson , Oleg Sulima
发明人： Bastiaan Arie Korevaar , James Neil Johnson , Oleg Sulima
IPC分类号： H01L31/0264 , H01L31/18 , H01L31/0368 , H01L31/075 , H01L31/042
CPC分类号： H01L31/075 , H01L31/0368 , H01L31/03925 , Y02E10/548
摘要： A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided.
摘要翻译：提出了具有n-i-p或p-i-n配置的光电器件。该器件包括插入在第一半导体层和第二半导体层之间的第一半导体层，第二半导体层和本征层。本征层包括镉，碲和氧。还提供了制造光伏器件的方法。

3. 发明申请

US20120132277A1 PHOTOVOLTAIC DEVICE AND METHOD FOR MAKING 审中-公开
标题翻译：光伏器件及其制造方法
公开(公告)号：US20120132277A1
公开(公告)日：2012-05-31
申请号：US12956811
申请日：2010-11-30
申请人： Oleg Sulima , Loucas Tsakalakos , Ching-Yeu Wei , Alok Mani Srivastava , Adam Fraser Halverson
发明人： Oleg Sulima , Loucas Tsakalakos , Ching-Yeu Wei , Alok Mani Srivastava , Adam Fraser Halverson
IPC分类号： H01L31/0232
CPC分类号： H01L31/055 , H01L31/046 , H01L31/056 , H01L31/073 , Y02E10/52 , Y02E10/543
摘要： An article, such as a solar cell or module, is presented. In one embodiment, the article includes a photovoltaically active region and a photovoltaically inactive region. A filler material is disposed in the inactive region; the filler material includes a reflective material configured to scatter at least 50% of light incident on the filler material. Another embodiment is an article that includes a photovoltaically active region and a photovoltaically inactive region. A filler material is disposed in the inactive region; the filler material includes a wavelength converting material. Other embodiments are described herein in which the filler material described above and disposed in the inactive region includes both the reflective material and the wavelength converting material.
摘要翻译：提出了诸如太阳能电池或模块的文章。在一个实施方案中，制品包括光伏活性区域和光伏非活性区域。填充材料设置在非活性区域中; 填充材料包括被配置为散射入射在填充材料上的至少50％的光的反射材料。另一个实施方案是包含光伏活性区域和光伏非活性区域的制品。填充材料设置在非活性区域中; 填充材料包括波长转换材料。本文描述了其中在上述并且设置在非活性区域中的填充材料包括反射材料和波长转换材料的其它实施例。

4. 发明申请

US20110153228A1 PHOTON IMAGING SYSTEM FOR DETECTING DEFECTS IN PHOTOVOLTAIC DEVICES, AND METHOD THEREOF 有权
标题翻译：用于检测光伏器件中的缺陷的光电成像系统及其方法
公开(公告)号：US20110153228A1
公开(公告)日：2011-06-23
申请号：US12645802
申请日：2009-12-23
申请人： Faisal Razi Ahmad , Oleg Sulima , Kaustubh Ravindra Nagarkar , Ri-an Zhao , James William Bray
发明人： Faisal Razi Ahmad , Oleg Sulima , Kaustubh Ravindra Nagarkar , Ri-an Zhao , James William Bray
IPC分类号： G01N21/88
CPC分类号： G01R31/308 , G01N21/66 , G01N21/9505 , H02S50/10
摘要： A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.
摘要翻译：一种方法包括经由电流源向至少一个光伏器件提供电流，并经由辐射探测器检测来自至少一个光伏器件的发射光子辐射。该方法还包括将对应于检测到的发射的光子辐射的信号从辐射检测器输出到处理器设备，以及经由处理器设备处理与检测到的发射的光子辐射相对应的信号以产生一个或多个二维光子图像。该方法还包括分析一个或多个二维光子图像以确定至少一个光伏器件中的至少一个缺陷。

5. 发明授权

US08301409B2 Photon imaging system for detecting defects in photovoltaic devices, and method thereof 有权
标题翻译：用于检测光伏器件中的缺陷的光子成像系统及其方法
公开(公告)号：US08301409B2
公开(公告)日：2012-10-30
申请号：US12645802
申请日：2009-12-23
申请人： Faisal Razi Ahmad , Oleg Sulima , Kaustubh Ravindra Nagarkar , Ri-an Zhao , James William Bray
发明人： Faisal Razi Ahmad , Oleg Sulima , Kaustubh Ravindra Nagarkar , Ri-an Zhao , James William Bray
IPC分类号： G01R29/00 , G06F11/00
CPC分类号： G01R31/308 , G01N21/66 , G01N21/9505 , H02S50/10
摘要： A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.
摘要翻译：一种方法包括经由电流源向至少一个光伏器件提供电流，并经由辐射探测器检测来自至少一个光伏器件的发射光子辐射。该方法还包括将对应于检测到的发射的光子辐射的信号从辐射检测器输出到处理器设备，以及经由处理器设备处理与检测到的发射的光子辐射相对应的信号以产生一个或多个二维光子图像。该方法还包括分析一个或多个二维光子图像以确定至少一个光伏器件中的至少一个缺陷。

6. 发明申请

US20080203425A1 Phototransistors, Methods of Making Phototransistors, and Methods of Detecting Light 审中-公开
标题翻译：光电晶体管，制造光电晶体管的方法和检测光的方法
公开(公告)号：US20080203425A1
公开(公告)日：2008-08-28
申请号：US10586193
申请日：2005-01-24
申请人： Oleg Sulima
发明人： Oleg Sulima
IPC分类号： H01L31/0304 , H01L31/11 , G01J1/02
CPC分类号： H01L31/1105 , H01L31/03046 , Y02E10/544
摘要： A phototransistor (400) comprises an emitter (43) comprising antimony, a base (42) comprising antimony, and a collector (41) comprising antimony. Preferably, the emitter, the base and the collector each comprises at least one of AlInGaAsSb, AlGaAsSb, AlGaSb, GaSb and InGaAsSb. The base comprises an emitter-contacting portion (41b) with a base-contacting portion (43a) of the emitter. The collector comprises a base-contacting portion (41b) which is in contact with a collector-contacting portion (421a) of the base. The phototransistor produces an internal gain upon being contacted with light within a receivable wavelength range, preferably greater than 1.7 micrometers. Also, a method of detecting light using such a phototransistor.
摘要翻译：光电晶体管（400）包括包含锑的发射器（43），包含锑的基底（42）和包含锑的收集器（41）。优选地，发射极，基极和集电极各自包括AlInGaAsSb，AlGaAsSb，AlGaSb，GaSb和InGaAsSb中的至少一种。基座包括具有发射极的基极接触部分（43a）的发射极接触部分（41b）。集电器包括与基座的集电极接触部分（421a）接触的基部接触部分（41a）。在可接收的波长范围内，优选大于1.7微米的光接触时，光电晶体管产生内部增益。此外，使用这种光电晶体管检测光的方法。

7. 发明申请

US20060207647A1 High efficiency inorganic nanorod-enhanced photovoltaic devices 审中-公开
标题翻译：高效无机纳米棒增强型光伏器件
公开(公告)号：US20060207647A1
公开(公告)日：2006-09-21
申请号：US11081967
申请日：2005-03-16
申请人： Loucas Tsakalakos , Ji-Ung Lee , Charles Korman , Steven Leboeuf , Abasifreke Ebong , Robert Wojnarowski , Alok Srivastava , Oleg Sulima
发明人： Loucas Tsakalakos , Ji-Ung Lee , Charles Korman , Steven Leboeuf , Abasifreke Ebong , Robert Wojnarowski , Alok Srivastava , Oleg Sulima
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , B82Y20/00 , H01L31/035227 , H01L31/1085
摘要： The present invention is directed to photovoltaic devices comprising nanostructured materials, wherein such photovoltaic devices are comprised exclusively of inorganic components. Depending on the embodiment, such nanostructured materials are either 1-dimensional nanostructures or branched nanostructures, wherein such nanostructures are used to enhance the efficiency of the photovoltaic device, particularly for solar cell applications. Additionally, the present invention is also directed at methods of making and using such devices.
摘要翻译：本发明涉及包含纳米结构材料的光伏器件，其中这种光伏器件仅由无机成分组成。根据实施方案，这种纳米结构材料是一维纳米结构或支化纳米结构，其中这种纳米结构用于增强光电器件的效率，特别是对于太阳能电池应用。另外，本发明还涉及制造和使用这些装置的方法。

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