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1. 发明授权

US08704617B2 Tunable filter for expanding the tuning range 有权
标题翻译：用于扩展调谐范围的可调滤波器
公开(公告)号：US08704617B2
公开(公告)日：2014-04-22
申请号：US13056772
申请日：2009-08-07
申请人： Dong-Wan Chun , Jae-Ok Seo , Kwang-Sun Park
发明人： Dong-Wan Chun , Jae-Ok Seo , Kwang-Sun Park
IPC分类号： H01P1/205 , H01P7/04
CPC分类号： H01P11/007 , H01P1/2053
摘要： A tunable filter for expanding tuning range includes: a housing, which has multiple cavities defined by partitions; a resonator contained in the cavity; at least one sliding member installed over the resonator; a main cover coupled to an upper portion of the housing; and at least one tuning element coupled to a lower portion of the sliding member and made of a metallic material. Tuning is accomplished by a sliding motion of the sliding member, and the resonator includes a cylindrical first conductor and a second conductor coupled to an upper portion of the cylindrical conductor, where a cross section of the second conductor is shaped as a circle with a portion removed such that an area of overlap between the tuning element and the second conductor is varied according to a sliding of the tuning element.
摘要翻译：用于扩展调谐范围的可调谐滤波器包括：壳体，其具有由隔板限定的多个空腔; 包含在腔中的谐振器; 安装在所述谐振器上的至少一个滑动构件; 主盖，其联接到所述壳体的上部; 以及耦合到滑动构件的下部并由金属材料制成的至少一个调谐元件。调谐通过滑动构件的滑动来实现，并且谐振器包括圆柱形第一导体和耦合到圆柱形导体的上部的第二导体，其中第二导体的横截面被成形为具有一部分的圆移除，使得调谐元件和第二导体之间的重叠区域根据调谐元件的滑动而改变。

2. 发明授权

US08686810B2 Frequency tuneable filter using a sliding system 有权
公开(公告)号：US08686810B2
公开(公告)日：2014-04-01
申请号：US12918368
申请日：2009-02-13
申请人： Kwang-Sun Park , Suk-Woo Lee , Jae-Ok Seo , Dong-Wan Chun
发明人： Kwang-Sun Park , Suk-Woo Lee , Jae-Ok Seo , Dong-Wan Chun
IPC分类号： H01P1/205 , H01P7/04
CPC分类号： H01P1/2053
摘要： A frequency-tunable filter using a sliding system is disclosed. The frequency-tunable filter includes: a housing, in which a multiple number of cavities are defined by partitions; a sub-cover, which is coupled to an upper portion of the housing and in which a guide groove is formed; at least one sliding member installed in the guide groove; a main cover coupled to an upper portion of the sub-cover; a resonator held in the cavity; and at least one tuning element coupled to a lower portion of the sliding member to be inserted inside the housing, where tuning is achieved by a sliding movement of the sliding member, and at least one first guide member is coupled to at least one side surface of the sliding member such that the first guide member guides a sliding movement by way of contact with the side surface of the guide groove.

3. 发明申请

US20120163093A1 NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 有权
标题翻译：非易失性存储器件及其程序方法
公开(公告)号：US20120163093A1
公开(公告)日：2012-06-28
申请号：US13331820
申请日：2011-12-20
申请人： Seiichi ARITOME , Soon Ok Seo
发明人： Seiichi ARITOME , Soon Ok Seo
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483 , G11C2211/5621 , G11C2211/5642
摘要： A programming method of a nonvolatile memory device includes inputting even data and odd data to be programmed into even memory cells coupled to even bit lines and odd memory cells coupled to odd bit lines, respectively, setting a sense signal as a first sense signal or a second sense signal having a lower voltage level than the first sense signal, based on odd data of odd memory cells adjacent to each of the even memory cells to be programmed, programming the even data into the even memory cells by supplying a program voltage, performing a program verify operation on each of the even memory cells in response to the set sense signal, and programming the odd data into the odd memory cells by supplying a program voltage.
摘要翻译：非易失性存储器件的编程方法包括：将要编程的偶数数据和奇数数据分别输入耦合到偶位线的偶数存储器单元和耦合到奇数位线的奇数存储单元，将感测信号设置为第一感测信号或基于与要编程的每个偶数存储器单元相邻的奇数存储器单元的奇数数据，具有比第一感测信号低的电压电平的第二感测信号，通过提供编程电压将偶数数据编程到偶数存储单元中，执行响应于所设置的感测信号对每个偶数存储单元进行程序验证操作，并通过提供编程电压将奇数数据编程到奇数存储单元中。

4. 发明授权

US08179212B2 Frequency tunable filter 有权
标题翻译：频率可调滤波器
公开(公告)号：US08179212B2
公开(公告)日：2012-05-15
申请号：US12182448
申请日：2008-07-30
申请人： Jae Ok Seo , Suk Woo Lee , Dong Wan Chun , Jin Yang Kim , Kwang Sun Park
发明人： Jae Ok Seo , Suk Woo Lee , Dong Wan Chun , Jin Yang Kim , Kwang Sun Park
IPC分类号： H01P1/202 , H01P7/06
CPC分类号： H01P1/2053 , H01P7/04
摘要： A frequency tunable filter comprises a housing having a plurality of walls therein defining a plurality of cavities; a cover mounted on the housing; a plurality of resonators contained in the cavities; at least one sliding member located between the cover and the resonators; and a plurality of metal tuning elements attached to a lower part of the sliding member, wherein frequency tuning is performed by sliding of the sliding member.
摘要翻译：频率可调滤波器包括壳体，其中限定多个空腔的多个壁; 安装在壳体上的盖子; 容纳在所述空腔中的多个谐振器; 位于盖和谐振器之间的至少一个滑动构件; 以及附接到滑动构件的下部的多个金属调谐元件，其中通过滑动构件的滑动来执行频率调谐。

5. 发明申请

US20110133861A1 TUNABLE FILTER FOR EXPANDING THE TUNING RANGE 有权
标题翻译：用于扩展调谐范围的过滤器
公开(公告)号：US20110133861A1
公开(公告)日：2011-06-09
申请号：US13056772
申请日：2009-08-07
申请人： Dong-Wan Chun , Jae-Ok Seo , Kwang-Sun Park
发明人： Dong-Wan Chun , Jae-Ok Seo , Kwang-Sun Park
IPC分类号： H01P1/208
CPC分类号： H01P11/007 , H01P1/2053
摘要： A tunable filter for expanding tuning range includes: a housing, which has multiple cavities defined by partitions; a resonator contained in the cavity; at least one sliding member installed over the resonator; a main cover coupled to an upper portion of the housing; and at least one tuning element coupled to a lower portion of the sliding member and made of a metallic material. Tuning is accomplished by a sliding motion of the sliding member, and the resonator includes a cylindrical first conductor and a second conductor coupled to an upper portion of the cylindrical conductor, where a cross section of the second conductor is shaped as a circle with a portion removed such that an area of overlap between the tuning element and the second conductor is varied according to a sliding of the tuning element.
摘要翻译：用于扩展调谐范围的可调谐滤波器包括：壳体，其具有由隔板限定的多个空腔; 包含在腔中的谐振器; 安装在所述谐振器上的至少一个滑动构件; 主盖，其联接到所述壳体的上部; 以及耦合到滑动构件的下部并由金属材料制成的至少一个调谐元件。调谐通过滑动构件的滑动来实现，并且谐振器包括圆柱形第一导体和耦合到圆柱形导体的上部的第二导体，其中第二导体的横截面被成形为具有一部分的圆移除，使得调谐元件和第二导体之间的重叠区域根据调谐元件的滑动而改变。

6. 发明申请

US20110032054A1 FREQUENCY TUNEABLE FILTER USING A SLIDING SYSTEM 有权
标题翻译：使用滑动系统的频率可调滤波器
公开(公告)号：US20110032054A1
公开(公告)日：2011-02-10
申请号：US12918368
申请日：2009-02-13
申请人： Kwang-Sun Park , Suk-Woo Lee , Jae-Ok Seo , Dong-Wan Chun
发明人： Kwang-Sun Park , Suk-Woo Lee , Jae-Ok Seo , Dong-Wan Chun
IPC分类号： H01P1/20
CPC分类号： H01P1/2053
摘要： A frequency-tunable filter using a sliding system is disclosed. The frequency-tunable filter includes: a housing, in which a multiple number of cavities are defined by partitions; a sub-cover, which is coupled to an upper portion of the housing and in which a guide groove is formed; at least one sliding member installed in the guide groove; a main cover coupled to an upper portion of the sub-cover; a resonator held in the cavity; and at least one tuning element coupled to a lower portion of the sliding member to be inserted inside the housing, where tuning is achieved by a sliding movement of the sliding member, and at least one first guide member is coupled to at least one side surface of the sliding member such that the first guide member guides a sliding movement by way of contact with the side surface of the guide groove.
摘要翻译：公开了一种使用滑动系统的频率可调滤波器。频率可调滤波器包括：壳体，多个空腔由隔板限定; 子盖，其联接到壳体的上部并且形成有引导槽; 安装在所述引导槽中的至少一个滑动构件; 主盖，其联接到所述副盖的上部; 保持在腔中的谐振器; 以及耦合到所述滑动构件的下部以插入所述壳体内的至少一个调谐元件，其中通过所述滑动构件的滑动运动来实现调谐，并且至少一个第一引导构件联接到至少一个侧表面使得第一引导构件通过与引导槽的侧表面接触而引导滑动。

7. 发明授权

US09058878B2 Read methods of semiconductor memory device 有权
标题翻译：读取半导体存储器件的方法
公开(公告)号：US09058878B2
公开(公告)日：2015-06-16
申请号：US13341303
申请日：2011-12-30
申请人： Seiichi Aritome , Soon Ok Seo
发明人： Seiichi Aritome , Soon Ok Seo
IPC分类号： G11C16/04 , G11C11/56 , G11C16/26
CPC分类号： G11C16/0483 , G11C11/5642 , G11C16/26
摘要： A read method of a semiconductor memory device includes performing a read operation on target cells by using a first read voltage, terminating the read operation on the target cells if, as a result of the read operation on the target cells, error correction is feasible, performing a read operation on first cells next to the target cells along a first direction if, as a result of the read operation on the target cells, error correction is unfeasible, performing the read operation again on the target cells by selecting one of a plurality of read voltages in response to a result of the read operation on the first cells and by using the selected read voltage for reading data of the target cells, and terminating the read operation on the target cells if error correction is feasible.
摘要翻译：半导体存储器件的读取方法包括通过使用第一读取电压对目标单元执行读取操作，如果作为对目标单元的读取操作的结果，错误校正是可行的，则终止对目标单元的读取操作，如果作为对目标单元的读取操作的结果，误差校正是不可行的，则对目标单元的旁边的第一单元执行读取操作，通过选择多个目标单元之一对目标单元执行再次操作的读取电压，并且通过使用所选择的读取电压来读取目标单元的数据，并且如果纠错是可行的，则终止对目标单元的读取操作。

8. 发明授权

US08759921B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08759921B2
公开(公告)日：2014-06-24
申请号：US13455504
申请日：2012-04-25
申请人： Soon Ok Seo , Sang Bum Lee , Se Jun Kim
发明人： Soon Ok Seo , Sang Bum Lee , Se Jun Kim
IPC分类号： H01L21/70
CPC分类号： H01L29/7926 , H01L27/11565 , H01L27/11582
摘要： A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.
摘要翻译：半导体存储器件包括形成在包括源极区域并且通过狭缝彼此分离的衬底之上的多个存储器块，耦合到存储块的串并设置在存储器块上的多个位线，以及源极接触线形成在狭缝内，分别耦合到源极区域，并且设置在与多个位线交叉的方向上。

9. 发明授权

US08654590B2 Nonvolatile memory device performing a program verification with sense signals based on program data of adjacent memory cells and program method thereof 有权
标题翻译：基于相邻存储单元的程序数据，利用感测信号执行程序验证的非易失性存储器件及其编程方法
公开(公告)号：US08654590B2
公开(公告)日：2014-02-18
申请号：US13331820
申请日：2011-12-20
申请人： Seiichi Aritome , Soon Ok Seo
发明人： Seiichi Aritome , Soon Ok Seo
IPC分类号： G11C16/34
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483 , G11C2211/5621 , G11C2211/5642
摘要： A programming method of a nonvolatile memory device includes inputting even data and odd data to be programmed into even memory cells coupled to even bit lines and odd memory cells coupled to odd bit lines, respectively, setting a sense signal as a first sense signal or a second sense signal having a lower voltage level than the first sense signal, based on odd data of odd memory cells adjacent to each of the even memory cells to be programmed, programming the even data into the even memory cells by supplying a program voltage, performing a program verify operation on each of the even memory cells in response to the set sense signal, and programming the odd data into the odd memory cells by supplying a program voltage.
摘要翻译：非易失性存储器件的编程方法包括：将要编程的偶数数据和奇数数据分别输入耦合到偶位线的偶数存储器单元和耦合到奇数位线的奇数存储单元，将感测信号设置为第一感测信号或基于与要编程的每个偶数存储器单元相邻的奇数存储器单元的奇数数据，具有比第一感测信号低的电压电平的第二感测信号，通过提供编程电压将偶数数据编程到偶数存储单元中，执行响应于所设置的感测信号对每个偶数存储单元进行程序验证操作，并通过提供编程电压将奇数数据编程到奇数存储单元中。

10. 发明申请

US20120273965A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120273965A1
公开(公告)日：2012-11-01
申请号：US13455504
申请日：2012-04-25
申请人： Soon Ok SEO , Sang Bum Lee , Se Jun Kim
发明人： Soon Ok SEO , Sang Bum Lee , Se Jun Kim
IPC分类号： H01L23/522 , H01L21/20 , H01L21/768
CPC分类号： H01L29/7926 , H01L27/11565 , H01L27/11582
摘要： A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.
摘要翻译：半导体存储器件包括形成在包括源极区域并且通过狭缝彼此分离的衬底之上的多个存储器块，耦合到存储块的串并设置在存储器块上的多个位线，以及源极接触线形成在狭缝内，分别耦合到源极区域，并且设置在与多个位线交叉的方向上。

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