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1. 发明专利

DE112020003726T5 Piezoelektrisches Element 未知
公开(公告)号：DE112020003726T5
公开(公告)日：2022-04-21
申请号：DE112020003726
申请日：2020-07-28
申请人： DENSO CORP , NISSHINBO MICRO DEVICES INC
发明人： KUCHIJI HIROYUKI , MASUMOTO NAOKI , YAMADA HIDEO , TESHIGAHARA AKIHIKO , MIZUTANI ATSUSHI
IPC分类号： H04R17/00 , H01L41/053 , H01L41/083 , H01L41/113
摘要： Ein piezoelektrisches Element 10 umfasst einen piezoelektrischen Elemententeil 12, einen Stützteil 18 sowie eine dehnbare Schicht 22. Der piezoelektrische Elemententeil 12 umfasst eine piezoelektrische Schicht 14 sowie Elektroden 16, zwischen denen die piezoelektrische Schicht 14 in einer Dickenrichtung Z angeordnet ist. Der Stützteil 18 stützt einen Umfangsabschnitt E1 des piezoelektrischen Elemententeils 12. Die dehnbare Schicht 22 ist in einem Oszillationsbereich E2 vorgesehen, der innerhalb des Umfangsabschnitts E1 des piezoelektrischen Elemententeils 12 angeordnet ist. Die dehnbare Schicht 22 hat auch eine höhere Elastizität als diejenige des piezoelektrischen Elemententeils 12.

2. 发明专利

DE112020005498T5 HALBLEITERBAUELEMENT 未知
公开(公告)号：DE112020005498T5
公开(公告)日：2022-09-15
申请号：DE112020005498
申请日：2020-11-06
申请人： NISSHINBO MICRO DEVICES INC , UNIV YAMANASHI
发明人： HASHIMOTO MAKOTO , YANO KOJI , SHIMIZU NAOHIRO
IPC分类号： H01L29/732 , H01L29/78 , H01L29/808 , H01L29/812
摘要： Ein Halbleiterbauelement verfügt über eine hohe Stehspannung und ist in der Lage, Brüche aufgrund eines großen transienten Stroms zu unterdrücken. Das Halbleiterbauelement hat eine Superübergangsstruktur mit einem ersten Säulenbereich eines ersten Leitfähigkeitstyps und einem zweiten Säulenbereich eines zweiten Leitfähigkeitstyps, der neben dem ersten Säulenbereich angeordnet ist, und beinhaltet eine erste Halbleiterschicht des zweiten Leitfähigkeitstyps, die auf dem ersten Säulenbereich und dem zweiten Säulenbereich angeordnet ist, eine zweite Halbleiterschicht des ersten Leitfähigkeitstyps, die auf der ersten Halbleiterschicht angeordnet ist, einen ersten Halbleiterbereich des ersten Leitfähigkeitstyps, der elektrisch mit der ersten Elektrode verbunden ist und in einem Oberflächenschichtabschnitt der zweiten Halbleiterschicht angeordnet ist, um von der ersten Halbleiterschicht getrennt zu sein, und einen zweiten Halbleiterbereich des zweiten Leitfähigkeitstyps, der elektrisch mit der zweiten Elektrode verbunden ist und wenigstens in dem Oberflächenschichtabschnitt der zweiten Halbleiterschicht angeordnet ist, um von dem ersten Halbleiterbereich getrennt zu sein, und der elektrisch mit der ersten Halbleiterschicht verbunden ist.

3. 发明授权

US12142958B2 Charge and discharge control circuit for controlling charge and discharge of secondary battery connected between positive and negative electrode power supply terminals 有权
公开(公告)号：US12142958B2
公开(公告)日：2024-11-12
申请号：US17596334
申请日：2021-01-19
申请人： Nisshinbo Micro Devices Inc.
发明人： Takayasu Yoshikawa
IPC分类号： H02J7/00 , H01M10/44 , H01M10/46
CPC分类号： H02J7/007182 , H01M10/44 , H01M10/46 , H02J7/00306 , H02J7/0031 , H02J7/0032 , H02J7/0036 , H02J7/0063 , H02J7/0068
摘要： A charge and discharge control circuit controls charge and discharge of a secondary battery connected between a positive electrode power supply terminal and a negative electrode power supply terminal by using a discharge control switching element and a charge control switching element connected between the secondary battery and a load or a charger and includes a charger connection detector circuit that generates a charger connection detection signal, based on a voltage of an external negative electrode terminal connected to the charger; and a pull-up detector circuit that detects a pull-up of the voltage of the external negative electrode terminal, based on the voltage of the external negative electrode terminal, and generates a pull-up detection signal. The charge and discharge control circuit turns off the discharge control switching element, and then, turns on the same after receiving the pull-up detection signal and the charger connection detection signal.

4. 发明授权

US11954555B2 Sensor interface circuit and sensor module 有权
公开(公告)号：US11954555B2
公开(公告)日：2024-04-09
申请号：US17924250
申请日：2021-05-07
申请人： NISSHINBO MICRO DEVICES INC. , TOKYO INSTITUTE OF TECHNOLOGY , ALPS ALPINE CO., LTD.
发明人： Hiroki Sato , Masayuki Sato , Noboru Ishihara , Shinji Murata
IPC分类号： G06K7/10 , H03B5/24 , H03K21/00
CPC分类号： G06K7/10366 , H03B5/24 , H03B2200/004 , H03K21/00
摘要： A sensor interface circuit includes: an RF switch having a control node; a bias circuit electrically connected to the control node and applying, to the control node, a voltage at a first level or a second level corresponding to a linear region of a reflection characteristic; a first variable oscillation circuit electrically connectable to a first sensor; a second variable oscillation circuit electrically connectable to a second sensor; and a difference circuit electrically connected between the first variable oscillation circuit and the bias circuit, and between the second variable oscillation circuit and the bias circuit.

5. 发明申请

US20220221889A1 POWER SUPPLY DEVICE PROVIDED WITH VOLTAGE CONTROLLER USING REFERENCE VOLTAGE CIRCUIT AND CURRENT CONTROLLER, AND ELECTRONIC APPARATUS WITH THE POWER SUPPLY DEVICE 有权
公开(公告)号：US20220221889A1
公开(公告)日：2022-07-14
申请号：US17595941
申请日：2020-03-18
申请人： Nisshinbo Micro Devices Inc.
发明人： Hiroki OKUDA
IPC分类号： G05F1/614 , G05F1/46
摘要： In a power supply device, a voltage controller includes: a reference voltage circuit that generates a reference voltage based on an input voltage; a voltage control circuit that generates ate output voltage of the voltage controller based on the input voltage by controlling an output current of the voltage controller so that the output voltage of the voltage controller corresponds to the reference voltage; and a first current detector circuit that detects the output current of the voltage controller, and generates a first current detection signal corresponding to the output current thereof. A current controller includes: a second current detector circuit that detects an output current of the current controller, and generates a second current detection signal corresponding to the output current thereof; and a current control circuit controls the output current of the current controller so that the second current detection signal corresponds to the first current detection signal.

6. 发明申请

US20220197320A1 CONSTANT VOLTAGE CIRCUIT FOR IMPROVEMENT OF LOAD TRANSIENT RESPONSE WITH STABLE OPERATION IN HIGH FREQUENCY, AND ELECTRONIC DEVICE THEREWITH 有权
公开(公告)号：US20220197320A1
公开(公告)日：2022-06-23
申请号：US17602053
申请日：2019-06-12
申请人： Nisshinbo Micro Devices Inc.
发明人： Kenji MII
IPC分类号： G05F1/40 , G05F3/26 , G05F3/04 , G05F1/46
摘要： A constant voltage circuit amplifies an error between a reference voltage and an output voltage by an operational amplifier, and controls a load current based on the amplified voltage so that the output voltage becomes a constant voltage. The constant voltage circuit includes voltage detector means that detects only AC components of the output voltage limited to a predetermined band and outputs a detected voltage; voltage amplifier means that amplifies AC components of the detected voltage and outputs an amplified voltage; judgment means that outputs a judgment signal indicating whether or not the amplified voltage equal to or larger than a predetermined threshold; and controller means configured to increase a current value of the constant current source included in the operational amplifier, based on the judgment signal, thereby temporarily increasing a current consumption of the operational amplifier.

7. 发明公开

US20240357938A1 PIEZOELECTRIC DEVICE 审中-公开
公开(公告)号：US20240357938A1
公开(公告)日：2024-10-24
申请号：US18682541
申请日：2022-09-08
申请人： Nisshinbo Holdings Inc. , Nisshinbo Micro Devices Inc.
发明人： Naoki MASUMOTO , Hiroyuki KUCHIJI , Toshikatsu KIKUCHI
IPC分类号： H10N30/00 , H10N30/20 , H10N30/30 , H10N30/853 , H10N30/87 , H04R17/10
CPC分类号： H10N30/101 , H10N30/2048 , H10N30/308 , H10N30/704 , H10N30/8554 , H10N30/87 , H04R17/10
摘要： A piezoelectric device comprising a substrate having a cavity, a piezoelectric film covering the cavity and being supported by the substrate, and electrodes disposed so as to sandwich the piezoelectric film. The piezoelectric film has a convex-shaped or concave-shaped vibrating region disposed on the cavity. The vibrating region is configured by a single-layer piezoelectric film including a first region composed of a first piezoelectric material and a second region composed of a second piezoelectric material having a piezoelectric constant larger than that of the first piezoelectric material. A first electrode and a second electrode are disposed so as to sandwich the second region of the piezoelectric film, a first input signal is converted to a first output signal based on displacement at the second region of the piezoelectric film between these electrodes, and a piezoelectric device comprising a convex-shaped vibrating region with high power and high sensitivity is provided.

8. 发明授权

US12034418B2 Differential amplifier circuit for use in error amplifier or comparator being component of DC to DC converter (as amended) 有权
公开(公告)号：US12034418B2
公开(公告)日：2024-07-09
申请号：US17596273
申请日：2021-07-26
申请人： Nisshinbo Micro Devices Inc.
发明人： Tomoaki Matsuda
IPC分类号： H03F3/45 , G05F1/46 , H02M3/155 , H03F3/30
CPC分类号： H03F3/45269 , G05F1/46 , H02M3/155
摘要： A differential amplifier circuit of the present invention includes a differential input circuit including first and second transistors, and amplifies a difference voltage between a first input voltage applied to a control terminal of the first transistor and a second input voltage applied to a control terminal of the second transistor. The differential input circuit a P-channel depletion type transistor having a gate connected to the control terminal of the first transistor and a source connected to the control terminal of the second transistor, and the P-channel depletion type transistor operates as a bias current source of the differential amplifier circuit.

9. 发明公开

US20230282694A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20230282694A1
公开(公告)日：2023-09-07
申请号：US17766575
申请日：2020-11-06
申请人： NISSHINBO MICRO DEVICES INC. , University of Yamanashi
发明人： Makoto HASHIMOTO , Koji YANO , Naohiro SHIMIZU
IPC分类号： H01L29/06 , H01L29/732 , H01L29/739 , H01L29/808 , H01L29/74
CPC分类号： H01L29/0634 , H01L29/732 , H01L29/7395 , H01L29/74 , H01L29/8083
摘要： A semiconductor device has a super junction structure and includes a first semiconductor layer of the second conductive type disposed on the first column region and the second column region, a second semiconductor layer of the first conductive type disposed on the first semiconductor layer, a first semiconductor region of the first conductive type that is electrically connected to the first electrode and is disposed in a surface layer portion of the second semiconductor layer to be separated from the first semiconductor layer, and a second semiconductor region of the second conductive type that is electrically connected to the second electrode and that is disposed at least in the surface layer portion of the second semiconductor layer to be separated from the first semiconductor region and is electrically connected to the first semiconductor layer.

10. 发明公开

US20230210012A1 PIEZOELECTRIC DEVICE 审中-公开
公开(公告)号：US20230210012A1
公开(公告)日：2023-06-29
申请号：US17972673
申请日：2022-10-25
申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
发明人： YUYA SAKURAI , HIDEO YAMADA , MEGUMI SUZUKI , TETSUYA ENOMOTO , AKIHIKO TESHIGAHARA , TAKAHIDE USUI , NAOKATSU IKEGAMI , SHUJI KATAKAMI
IPC分类号： H01L41/18 , H01L41/08 , H01L41/047 , H01L41/22
CPC分类号： H01L41/18 , H01L41/0805 , H01L41/0477 , H01L41/22
摘要： A piezoelectric device includes a base member, a first conductive film arranged above the base member in contact with an upper surface of the base member, a piezoelectric film arranged above the first conductive film in contact with an upper surface of the first conductive film, a second conductive film arranged on the piezoelectric film, and an insulating portion provided inside a trench penetrating through the piezoelectric film and the first conductive film. The insulating portion has a higher electrical resistivity than the piezoelectric film.

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