专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR20200127939A 원격 플라즈마 원자층 증착을 위한 라디컬 소스 설계 审中-公开
公开(公告)号：KR20200127939A
公开(公告)日：2020-11-11
申请号：KR20200142328
申请日：2020-10-29
申请人： NOVELLUS SYSTEMS INC
发明人： VAN SCHRAVENDIJK BART J
IPC分类号： C23C16/455 , C23C16/505
摘要： 원자층증착반도체프로세싱동작들동안라디컬들을공급하기위한라디컬소스가제공된다. 라디컬소스는원격볼륨, 배플볼륨, 및배플볼륨으로부터원격볼륨을분할하는배플을포함할수도있다. 배플볼륨및 원격볼륨은복수의배플홀들을통하여배플을통해유동적으로접속될수도있다. 배플은, 배플볼륨과유동적으로접속된복수의제 1 가스분배홀들을갖는면판으로부터오프셋될수도있다. 배플가스유입구는배플볼륨과유동적으로접속될수도있고, 제 1 프로세스가스유입구는원격볼륨과유동적으로접속될수도있다. 배플가스는, 원격볼륨내의라디컬화된제 1 프로세스가스가배플볼륨및 면판을통해흐르게하는것을방지하도록배플볼륨으로흐를수도있다.

2. 发明公开

KR20200130206A 기판 영역의 외측에서 전구체 플로우 및 플라즈마를 억제하는 것에 의한 기판 프로세싱 시스템에서의 기생 성막 억제 审中-公开
公开(公告)号：KR20200130206A
公开(公告)日：2020-11-18
申请号：KR20200146249
申请日：2020-11-04
申请人： NOVELLUS SYSTEMS INC
发明人： XIA CHUNGUANG , CHANDRASEKHARAN RAMESH , KEIL DOUGLAS , AUGUSTYNIAK EDWARD J , LEESER KARL
IPC分类号： C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
摘要： 기판프로세싱시스템은, 베이스부분및 스템부분을포함하고챔버로전구체가스를전달하는샤워헤드를포함한다. 칼라는챔버의상부표면에샤워헤드를접속시킨다. 칼라는복수의슬롯들을포함하고, 샤워헤드의스템부분주위에배열되며, 샤워헤드의베이스부분과챔버의상부표면사이의영역으로복수의슬롯들을통해퍼지가스를지향시킨다.

3. 发明公开

KR20200127942A 목표 조성 및 막 특성들을 갖는 ＳｉＣ 부류의 막들을 획득하는 방법 审中-公开
公开(公告)号：KR20200127942A
公开(公告)日：2020-11-11
申请号：KR20200143459
申请日：2020-10-30
申请人： NOVELLUS SYSTEMS INC
发明人： VARADARAJAN BHADRI N
IPC分类号： H01L21/02 , C23C16/32 , C23C16/452 , C23C16/505
摘要： 실리콘카바이드부류의막들을제공하기위한방법들및 시스템들이제공된다. 실리콘카바이드막의조성은프리커서들의조합의선정및 프리커서들간의플로우레이트비에의해서제어될수 있다. 실리콘카바이드막들은 2 개의상이한유기-실리콘프리커서들을유동시키고반응챔버내에서서로혼합시킴으로써기판상에서증착될수 있다. 유기-실리콘프리커서들은실질적으로낮은에너지상태에서하나이상의라디칼들과반응하여서실리콘카바이드막을형성한다. 하나이상의라디칼들은리모트플라즈마소스내에서형성될수 있다.

4. 发明公开

KR20200125918A 작은 임계 치수의 피쳐에서 텅스텐 컨택 저항을 개선하는 방법 审中-公开
公开(公告)号：KR20200125918A
公开(公告)日：2020-11-05
申请号：KR20200141428
申请日：2020-10-28
申请人： NOVELLUS SYSTEMS INC
发明人： FENG CHEN , YANG TSUNG HAN , GAO JUWEN , DANEK MICHAL
IPC分类号： H01L21/285 , C23C16/02 , C23C16/04 , C23C16/18 , C23C16/455 , H01L21/768
摘要： 핵생성층의이용없이양호한충진을가지는저-저항텅스텐층을구비하는피쳐를충진하는방법이제공된다. 특정실시예에서, 상기방법은높은수소분압하에서텅스텐을화학기상증착하기이전의선택적인처리프로세스를포함한다. 다양한실시예에따르면, 처리프로세스는침지단계또는플라즈마처리단계를포함할수 있다. 종래의텅스텐핵생성층을제거함으로써, 개선된텅스텐기술로산출된텅스텐층은감소된전체컨택저항을가진다.

5. 发明公开

KR20180039759A 작업물 가공 장치 및 작업물 가공 방법 审中-公开
公开(公告)号：KR20180039759A
公开(公告)日：2018-04-18
申请号：KR20187009923
申请日：2010-08-30
申请人： NOVELLUS SYSTEMS INC
发明人： MAYER STEVEN T , PORTER DAVID
IPC分类号： H01L21/67 , C23F1/08 , C23F1/34 , C23F1/46 , H01L21/306 , H01L21/3213
CPC分类号： C23F1/46 , C23F1/08 , C23F1/34 , C25C7/00 , H01L21/30604 , H01L21/32134 , H01L21/67017 , H01L21/67051
摘要： 화학에칭제를회수및 복원하면서작업물로부터금속을등방성에칭하기위한방법및 장치를개시한다. 여러구체예는에칭하기위한장치및 방법을포함하는데, 여기서회수및 복원된에칭제가연속루프재순환설계에서재사용된다. 시약을재공급하거나및/또는 pH, 이온세기, 염도등과같은파라미터를조절하기위한비정기적인방출(bleed) 및공급(feed)을수반하면서이러한공정이되풀이되어반복되는정상상태조건이달성될수 있다.

6. 发明专利

JP2011192680A Method of forming tungsten thin film with low resistivity and robust micro-adhesion characteristic 有权
标题翻译：形成具有低电阻和稳定的微粘合特性的铁电薄膜的方法
公开(公告)号：JP2011192680A
公开(公告)日：2011-09-29
申请号：JP2010055163
申请日：2010-03-11
申请人： Novellus Systems Inc , ノベルス・システムズ・インコーポレーテッドNovellus Systems, Incorporated
发明人： CHANDRASHEKAR ANAND , GLASS MIRKO , HUMAYUN RAASHINA , DANEK MICHAL , ASHTIANI KAIHAN , CHEN FENG , CHAN LANA HIULUI , MANE ANIL
IPC分类号： H01L21/285 , C23C16/14 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a low resistivity tungsten film with good uniformity and good adhesion to an underlying layer. SOLUTION: A tungsten nucleation layer is formed using a pulsed nucleation layer process at low temperature. Thereafter, the deposited nucleation layer is treated prior to depositing a bulk tungsten fill. By the treatment, resistivity of the deposited tungsten film is lowered. In one embodiment, the nucleation layer is deposited by a boron-based chemistry without utilizing hydrogen. In another embodiment, the treatment includes a process of exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成具有良好的均匀性和对下层的良好粘附性的低电阻率钨膜的方法。解决方案：在低温下使用脉冲成核层工艺形成钨成核层。此后，沉积成核层在沉积大块钨填料之前进行处理。通过处理，沉积的钨膜的电阻率降低。在一个实施方案中，通过不使用氢的硼基化学沉积成核层。在另一个实施方案中，处理包括将成核层暴露于还原剂和含钨前体的交替循环的方法。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2011049508A Etching formulation for isotropic copper etching 有权
标题翻译：用于等压铜蚀刻的蚀刻配方
公开(公告)号：JP2011049508A
公开(公告)日：2011-03-10
申请号：JP2009207571
申请日：2009-09-08
申请人： Novellus Systems Inc , ノベルス・システムズ・インコーポレーテッドNovellus Systems, Incorporated
发明人： MAYER STEVEN T , WEBB ERIC
IPC分类号： H01L21/306 , C23F1/18 , H01L21/308 , H01L21/3213
摘要： PROBLEM TO BE SOLVED: To provide a method of removing copper by isotropically etching the copper using a formulation and an isotropic copper etching formulation.
SOLUTION: A formulation for isotropically etching copper contains an aqueous solution. The aqueous solution contains: (a) a complexing agent of a bidentate, tridentate or quadridentate selected from a group consisting of a diamine, a triamine, and a tetramine; and (b) an oxidizer. The pH of the aqueous solution is 5 to 12. In one embodiment, the etching solution contains ethylenediamine (EDA) and hydrogen peroxide at a pH of between about 6 and 10. Solutions capable of etching copper at high rates (e.g. at least about 1,000 Å/min) without roughening a substantial surface of the copper layer are provided. The formulation is particularly usefully used for removing copper from a semiconductor device of a semifinished product (e.g., for etching a copper loading part).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过使用制剂和各向同性铜蚀刻制剂各向同性蚀刻铜来除去铜的方法。解决方案：用于各向同性蚀刻铜的配方含有水溶液。水溶液含有：（a）选自二胺，三胺和四胺的二齿，三齿或三齿的络合剂; 和（b）氧化剂。水溶液的pH为5至12.在一个实施方案中，蚀刻溶液含有约6至10的pH下的乙二胺（EDA）和过氧化氢。能够高速蚀刻铜的溶液（例如至少约1,000 提供了不使粗糙的铜层表面粗糙化的/分钟。该制剂特别有用地用于从半成品的半导体器件（例如，用于蚀刻铜负载部件）中去除铜。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010098279A High dose implantation strip (hdis) in hydrogen base chemistry 有权
标题翻译：氢化物基质化学中的高剂量植入条纹（HDIS）
公开(公告)号：JP2010098279A
公开(公告)日：2010-04-30
申请号：JP2009018046
申请日：2009-01-29
申请人： Novellus Systems Inc , ノベルス・システムズ・インコーポレーテッドNovellus Systems, Incorporated
发明人： GOTO HARUHIRO HARRY , CHEUNG DAVID
IPC分类号： H01L21/3065 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide an improved method and device for stripping a photoresist for HDIS and an ion implantation-related residue.
SOLUTION: Plasma is generated using elemental hydrogen, a weak oxidizing agent and a fluorine-containing gas. An inert gas is introduced to the plasma on the downstream side of a plasma source and on the upstream side of a showerhead that directs gas mixture into a reaction chamber. In the reaction chamber, the gas mixture reacts with a high-dose implanted resist. This process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供用于剥离用于HDIS的光致抗蚀剂和与离子注入相关的残留物的改进的方法和装置。解决方案：使用元素氢，弱氧化剂和含氟气体产生等离子体。将惰性气体引入到等离子体源的下游侧的等离子体中，以及将气体混合物引导到反应室中的喷头的上游侧。在反应室中，气体混合物与高剂量植入的抗蚀剂反应。该方法以高剥离速率去除了外壳和体抗蚀剂层，并且以低的硅损耗使工件表面基本上无残留物。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JPH0925578A CYCLONE EVAPORATOR, CHEMICAL VAPOR DEPOSITION SYSTEM USING THE SAME AND METHOD FOR EVAPORATION TREATMENT OF LIQUID IN THEM 失效
公开(公告)号：JPH0925578A
公开(公告)日：1997-01-28
申请号：JP10204896
申请日：1996-04-02
申请人： NOVELLUS SYSTEMS INC
发明人： JIEFURII SHII BENJINGU , EDOWAADO JIEI MAKINANII , MAIKERU ENU SUSEFU
IPC分类号： C23C16/44 , C23C16/448 , H01L21/205 , H01L21/285 , H01L21/31

10. 发明专利

JPH07326494A PLASMA PROCESS DEVICE 失效
公开(公告)号：JPH07326494A
公开(公告)日：1995-12-12
申请号：JP30097993
申请日：1993-11-04
申请人： NOVELLUS SYSTEMS INC
发明人： JIEFURII SHII BENJINGU , ERIOTSUTO KEI BUROODOBENTO , JIEI KAAKUUTSUDO EICHI RAFU
IPC分类号： C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE: To provide a plasma source system which can provide appropriate ion density to achieve a high etching speed, uniform ion current to remove uniformly material of a substrate with a big diameter, more uniform ion distribution in plasma and higher ion directivity in a structure with a big aspect ratio, and which is implemented by a machine with a simple construction. CONSTITUTION: This plasma processing device for manufacturing of an integrated circuit has a chamber 30 and a platen 40 to support a substrate 32 in the chamber on its surface. It has a semi-spherical induction coil 18 in which a winding on its base is almost in parallel with the surface of the platen 40, is also on the same surface other windings are almost in parallel with the surface of the platen respectively and a chamber is placed inside, a radio frequency power source with a low frequency connected to the induction coil 18, and a bias power source connected to the platen to bias the substrate 32.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式