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1. 发明授权

US4517728A Manufacturing method for MIS-type semiconductor device 失效
标题翻译： MIS型半导体器件的制造方法
公开(公告)号：US4517728A
公开(公告)日：1985-05-21
申请号：US559399
申请日：1983-12-08
申请人： Morihiro Niimi
发明人： Morihiro Niimi
IPC分类号： H01L29/78 , H01L21/033 , H01L21/321 , H01L21/336 , H01L21/22
CPC分类号： H01L29/66575 , H01L21/033 , H01L21/321
摘要： A manufacturing method for an MIS type semiconductor device features in the preferred form a single masking operation used to define source, gate, and drain windows simultaneously in an upper insulating oxide layer disposed over a semiconducting polysilicon layer, the polysilicon layer being separated from the semiconductor substrate by a thin insulating oxide layer serving as the gate oxide. By subsequent deposition of an overall capping nitride layer, followed by selective removal of layers, using relatively low resolution photoresist and portions of the layers themselves as intermediate etching barriers, and by finally converting the polycrystalline layer to an oxide except where it is protected from oxidation by the presence of a nitride stripe over a gate window, the resulting gate electrode is precisely centered between the source and drain windows, and is sealed on all three sides by a protective oxide layer.
摘要翻译：一种用于MIS型半导体器件的制造方法的特征在于优选的形式，用于在设置在半导体多晶硅层上的上绝缘氧化物层中同时限定源极，栅极和漏极窗口的单个掩模操作，所述多晶硅层与半导体衬底由用作栅极氧化物的薄绝缘氧化物层。通过随后沉积整个封盖氮化物层，随后选择性地去除层，使用相对低分辨率的光致抗蚀剂和部分层本身作为中间蚀刻屏障，并且最终将多晶层转化为氧化物，除了其被保护以免氧化通过在栅极窗口上存在氮化物条纹，所得到的栅电极在源极和漏极窗口之间精确地居中，并且通过保护氧化物层在所有三个侧面上被密封。

2. 发明申请

US20080122341A1 Quantum Dot-Dispersed Light Emitting Device, and Manufacturing Method Thereof 失效
标题翻译：量子点分散发光器件及其制造方法
公开(公告)号：US20080122341A1
公开(公告)日：2008-05-29
申请号：US10587029
申请日：2005-01-20
申请人： Masahiro Orita , Hiroshi Kawazoe , Satoshi Kobayashi , Hiroaki Yanagita , Morihiro Niimi , Yuki Tani , Misaki Hatsuda
发明人： Masahiro Orita , Hiroshi Kawazoe , Satoshi Kobayashi , Hiroaki Yanagita , Morihiro Niimi , Yuki Tani , Misaki Hatsuda
IPC分类号： H01J1/63
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/08 , H01L2924/0002 , Y10T428/256 , H01L2924/00
摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.
摘要翻译：获得具有实际发光特性的发光器件，而不需外延生长。本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光空穴注入电极，与其外延关系。

3. 发明授权

US07880377B2 Quantum dot-dispersed light emitting device, and manufacturing method thereof 失效
标题翻译：量子点分散发光器件及其制造方法
公开(公告)号：US07880377B2
公开(公告)日：2011-02-01
申请号：US10587029
申请日：2005-01-20
申请人： Masahiro Orita , Hiroshi Kawazoe , Satoshi Kobayashi , Hiroaki Yanagita , Morihiro Niimi , Yuki Tani , Misaki Hatsuda
发明人： Masahiro Orita , Hiroshi Kawazoe , Satoshi Kobayashi , Hiroaki Yanagita , Morihiro Niimi , Yuki Tani , Misaki Hatsuda
IPC分类号： H05B33/14 , B32B5/16
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/08 , H01L2924/0002 , Y10T428/256 , H01L2924/00
摘要： A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.
摘要翻译：获得具有实际发光特性的发光器件，而不需外延生长。本发明的量子点分散发光器件包括基板11，电子注入电极12，空穴注入电极14和与两个电极接触的无机发光层13。无机发光层13含有双极性无机半导体材料和作为发光中心分散在双极性无机半导体材料中的纳米晶体15，并且被配置为能够在与电子注入电极和/或电子注入电极的界面处发光空穴注入电极，与其外延关系。

4. 发明授权

US4357553A Surface-acoustic-wave device 失效
标题翻译：表面声波装置
公开(公告)号：US4357553A
公开(公告)日：1982-11-02
申请号：US177966
申请日：1980-08-14
申请人： Shoichi Minagawa , Takamasa Sakai , Takeshi Okamoto , Morihiro Niimi
发明人： Shoichi Minagawa , Takamasa Sakai , Takeshi Okamoto , Morihiro Niimi
IPC分类号： H03F13/00 , H03F7/00
CPC分类号： H03F13/00
摘要： A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.
摘要翻译：表面声波装置具有由半导体和压电层形成的叠层和局部地设置在半导体和所述压电层的界面部分的耗尽层控制装置，其中在除了通过向耗尽层控制装置施加DC偏置电压和泵浦电压来控制耗尽层控制装置的耗尽层电容。

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