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1. 发明申请

WO2007127294A3 EXHAUST SYSTEM 审中-公开
标题翻译：排气系统
公开(公告)号：WO2007127294A3
公开(公告)日：2008-01-24
申请号：PCT/US2007010112
申请日：2007-04-25
申请人： MITSUBISHI CABLE IND LTD , OSAKA RASENKAN KOGYO CO LTD , SPANSION LLC , SPANSION JAPAN LTD
IPC分类号： C23F1/00 , C23C16/44 , H01L21/205 , H01L21/22 , H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/4412
摘要： An exhaust system includes: an exhaust pressure controller interposed in an exhaust passage and including: a pipe body including a side peripheral wall in which at least one port is formed; and a gas introduction wall for introducing an exhaust gas flowing from an upstream side of the pipe body so that the exhaust gas flows downstream without coming into direct contact with the port and vicinity thereof, one face of the gas introduction wall forming a pressure control path together with an inner face of the side peripheral wall while another face of the gas introduction wall forming an exhaust gas path along which the exhaust gas flows. The port communicates with the pressure control path, and the pressure control path communicates with the exhaust gas path at part downstream of the port.
摘要翻译：排气系统包括：置于排气通道中的排气压力控制器，包括：管体，其包括形成至少一个端口的侧壁; 以及气体引入壁，用于引入从管体的上游侧流出的排气，使得废气在下游流动而不与其端口及其附近直接接触，气体导入壁的一个面形成压力控制路径与侧壁的内表面一起，同时气体导入壁的另一面形成废气流过的排气路径。所述端口与所述压力控制路径连通，并且所述压力控制路径在所述端口的下游的部分与所述排气路径连通。

2. 发明申请

WO2007127294A9 EXHAUST SYSTEM 审中-公开
标题翻译：排气系统
公开(公告)号：WO2007127294A9
公开(公告)日：2009-02-12
申请号：PCT/US2007010112
申请日：2007-04-25
申请人： MITSUBISHI CABLE IND LTD , OSAKA RASENKAN KOGYO CO LTD , SPANSION LLC , SPANSION JAPAN LTD
IPC分类号： C23F1/00 , C23C16/44 , H01L21/205 , H01L21/22 , H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/4412
摘要： An exhaust system includes: an exhaust pressure controller interposed in an exhaust passage and including: a pipe body including a side peripheral wall in which at least one port is formed; and a gas introduction wall for introducing an exhaust gas flowing from an upstream side of the pipe body so that the exhaust gas flows downstream without coming into direct contact with the port and vicinity thereof, one face of the gas introduction wall forming a pressure control path together with an inner face of the side peripheral wall while another face of the gas introduction wall forming an exhaust gas path along which the exhaust gas flows. The port communicates with the pressure control path, and the pressure control path communicates with the exhaust gas path at part downstream of the port.
摘要翻译：排气系统包括：置于排气通道中的排气压力控制器，包括：管体，其包括形成至少一个端口的侧壁; 以及气体引入壁，用于引入从管体的上游侧流出的排气，使得废气在下游流动而不与其端口及其附近直接接触，气体导入壁的一个面形成压力控制路径与侧壁的内表面一起，同时气体导入壁的另一面形成废气流过的排气路径。所述端口与所述压力控制路径连通，并且所述压力控制路径在所述端口的下游的部分与所述排气路径连通。

3. 发明公开

EP2551563A4 ROTATING-SHAFT SEAL 有权
标题翻译：密封了一圈
公开(公告)号：EP2551563A4
公开(公告)日：2013-01-30
申请号：EP10848344
申请日：2010-12-24
申请人： MITSUBISHI CABLE IND LTD
发明人： FUJII NOBUKAZU , OIDA HIRONORI
IPC分类号： F16J15/32
CPC分类号： F16J15/3228 , F16J15/3232 , F16J15/324

4. 发明公开

EP2149938A4 LEVER TYPE CONNECTOR 有权
标题翻译：杆件连接
公开(公告)号：EP2149938A4
公开(公告)日：2011-03-30
申请号：EP08752653
申请日：2008-05-13
申请人： MITSUBISHI CABLE IND LTD
发明人： AMBO TSUGIO , TANAKA YOSHIKAZU , URAMATSU SATOSHI , HIROSE TETSU
IPC分类号： H01R13/629
CPC分类号： H01R13/62955 , H01R13/62938

5. 发明公开

EP1853103A4 RADIO WAVE SHIELDING BODY 有权
标题翻译：无线电波辐射的屏蔽
公开(公告)号：EP1853103A4
公开(公告)日：2010-12-08
申请号：EP06713801
申请日：2006-02-15
申请人： MITSUBISHI CABLE IND LTD
发明人： KUDO TOSHIO , KASHIHARA KAZUYUKI , HOSOTANI KATSUNORI , SAKAI SATOSHI
IPC分类号： H05K9/00 , E04B1/92 , H01Q17/00
CPC分类号： H05K9/0003 , H01Q15/0013 , H05K9/0005 , H05K9/0094
摘要： An electromagnetic screen (1) comprises a plurality of antennas (4) each of which reflects an electromagnetic wave having a specific frequency. The plurality of antennas (4) are arranged so as to constitute a pattern. Each of the antennas (4) has three segment-shaped first element parts (4a) and three segment-shaped second element parts (4b). The three first element parts (4a) radially extend from the center of the antenna (4) by substantially the same length such that any two of the three first element parts (4a) form an angle of 120° with each other. Each of the second element parts (4b) are connected to an outer edge of a corresponding one of the first element parts (4a).

7. 发明公开

EP2013378A4 EXHAUST SYSTEM 有权
标题翻译：排气系统
公开(公告)号：EP2013378A4
公开(公告)日：2010-02-03
申请号：EP07776247
申请日：2007-04-25
申请人： MITSUBISHI CABLE IND LTD , OSAKA RASENKAN KOGYO CO LTD , SPANSION LLC , SPANSION JAPAN LTD
发明人： IKEDA TAKESHI , KOIZUMI KAZUO , TAKEDA HIROYUKI , KOYAMA TETSUO , WATANABE KEIICHI
IPC分类号： C23F1/00 , C23C16/44 , H01L21/205 , H01L21/22 , H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： C23C16/4412

8. 发明公开

EP1378949A4 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： LICHTEMITTIERENDHALBLEITERBAUELEMENT
公开(公告)号：EP1378949A4
公开(公告)日：2006-03-22
申请号：EP02705381
申请日：2002-03-20
申请人： MITSUBISHI CABLE IND LTD
发明人： TADATOMO KAZUYUKI , OKAGAWA HIROAKI , OUCHI YOICHIRO , TSUNEKAWA TAKASHI
IPC分类号： H01L33/12 , H01L33/22 , H01L33/32 , H01L33/00
CPC分类号： H01L33/22 , H01L33/12 , H01L33/32
摘要： Projections and recesses (1a) are formed in a first layer (1), and a second layer (2) having an index of refraction different from that of the first layer (1) is formed while filling in the recesses (alternatively, a first crystal (10) is grown on a crystal layer (S) serving as the foundation of the growth to have an uneven surface, and a second crystal (20) having an index of refraction different from that of the first crystal is grown). After the uneven refractive index interface (1a(10a)) is thus formed, a device structure where a semiconductor crystal layers including a light-emitting layer (A) are formed thereon. As a result, the light generated in the light-emitting layer (A) and traveling horizontally is bent by the influence of the uneven refractive index interface and directed to the outside. If ultraviolet light is emitted by using InGaN as the material of the light-emitting layer, a quantum well structure is used, and AlGaN is eliminated by forming all the layers between the quantum well structure and a low-temperature buffer layer by using a GaN crystal as the material. The quantum well structure is preferably made up of a well layer of InGaN and a barrier layer of GaN. The thickness of the barrier layer preferably ranges from 6 to 30 nm.
摘要翻译：在第一层（1）中形成凸起和凹槽（1a），并在填充凹槽时形成具有与第一层（1）不同的折射率的第二层（2）（或者，第一层在作为生长基础的晶体层（S）上生长晶体（10）以具有不平坦表面，并且生长具有与第一晶体不同的折射率的第二晶体（20））。在这样形成不均匀折射率界面（1a（10a））之后，形成其上形成包括发光层（A）的半导体晶体层的器件结构。结果，在发光层（A）中产生并且水平行进的光在不均匀折射率界面的影响下弯曲并且被引导到外部。如果通过使用InGaN作为发光层的材料来发射紫外光，则使用量子阱结构，并且通过使用GaN来形成量子阱结构和低温缓冲层之间的所有层来消除AlGaN 水晶作为材料。量子阱结构优选由InGaN的阱层和GaN的势垒层构成。阻挡层的厚度优选在6至30nm的范围内。

9. 发明公开

EP3187628A4 ELECTRODEPOSITION COATED ARTICLE AND METHOD FOR PRODUCING SAME 有权转让
公开(公告)号：EP3187628A4
公开(公告)日：2018-04-04
申请号：EP15835515
申请日：2015-07-30
申请人： MITSUBISHI MATERIALS CORP , MITSUBISHI CABLE IND LTD
发明人： IIDA SHINTARO , SAKURAI HIDEAKI , KAMIBAYASHI HIROYUKI , NAGATO TOYOKAZU
IPC分类号： C25D13/06 , C09D5/44 , C09D179/08 , C25D13/04 , C25D13/10 , C25D13/16 , H01B3/30
CPC分类号： C09D5/4461 , C09D5/44 , C09D179/08 , C25D13/04 , C25D13/06 , C25D13/10 , C25D13/16 , H01B3/306
摘要： A method for producing an electrodeposition coated article, in which an insulating film is formed by forming an insulating layer on a surface of an article to be coated according to an electrodeposition method by using an electrodeposition coating material, and then by performing a baking treatment, the electrodeposition coating material contains a solvent containing polyamide imide and an organic solvent added to the electrodeposition coating material, a boiling point of the organic solvent is higher than 100°C, and a Hansen solubility parameter is similar to the polyamide imide and has high compatibility.

10. 发明公开

EP2962843A4 LAMINATE AND PROCESS FOR PRODUCING SAME 有权
标题翻译：层压板和及其制造方法
公开(公告)号：EP2962843A4
公开(公告)日：2016-11-09
申请号：EP14756485
申请日：2014-02-26
申请人： MITSUBISHI CABLE IND LTD
发明人： SASAKI TAISHIRO , FUJII MASANORI , OIDA HIRONORI , FUJII NOBUKAZU
IPC分类号： B32B15/06 , B32B7/12 , B32B15/08 , B32B25/14 , C09J11/06 , C09J161/04
CPC分类号： B32B15/06 , B32B7/12 , B32B25/14 , B32B2255/06 , B32B2255/26 , B32B2307/536 , B32B2307/54 , B32B2307/7242 , B32B2307/7265 , B32B2581/00 , C09J5/06 , C09J161/06 , C09J2400/163 , C09J2409/00 , C09J2461/00
摘要： The present invention provides a laminate having a high fluorohydrocarbon resistance even when used at a high temperature and suitable for use as a sealing member such as oil sealing, gasket and the like. In a laminate including a metal member, and an adhesive and a hydrogenated nitrile rubber formed article laminated on the metal member, the adhesive is formed from a cured product of a composition containing a resin containing not less than 90 mass % of a novolac type phenol resin having a gelling time, as measured by Japanese Industrial standard (JIS) K 6910:2007 "gelling time C method", of 50 sec - 150 sec at 150°C, and a curing agent.

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