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1. 发明申请

US20130168702A1 Method For Preparing a GaAS Substrate For A Ferromagnetic Semiconductor, Method for Manufacturing One Such Semiconductor, Resulting Substrate and Semiconductor, And Uses Of Said Semiconductor 审中-公开
标题翻译：用于制备用于铁磁半导体的GaAS衬底的方法，制造一种这样的半导体，所得衬底和半导体的方法，以及所述半导体的用途
公开(公告)号：US20130168702A1
公开(公告)日：2013-07-04
申请号：US13818168
申请日：2011-07-15
申请人： André Barski , Matthieu Jamet
发明人： André Barski , Matthieu Jamet
IPC分类号： H01L43/12 , H01L43/10 , H01L21/02
CPC分类号： H01L43/12 , H01L21/02658 , H01L43/10
摘要： A method is provided for preparing a surface of a GaAs substrate (001) such that it can receive a ferromagnetic semiconductor deposited by epitaxy, as well as a substrate thus prepared, method for manufacturing one such semiconductor deposited on the substrate, the resulting semiconductor, and uses thereof. The preparation method renders the surface capable of receiving an epitaxially deposited ferromagnetic semiconductor which may include semiconductors from groups III-V, IV and II-VI of the periodic table, with the exception of GaAs, and which also includes at least one magnetic element of manganese, iron, cobalt, nickel and chromium. The method includes vacuum deoxidation of the surface under a reduced germanium-based flux such that, following desorption of the arsenic and gallium oxide from the said surface, the latter has a single-domain 2×1 reconstruction and is sufficiently planar and arsenic-depleted to prevent any diffusion of arsenic from the substrate to the subsequently deposited semiconductor.
摘要翻译：提供了一种用于制备GaAs衬底（001）的表面的方法，使得其可以接收通过外延沉积的铁磁半导体以及由此制备的衬底，用于制造沉积在衬底上的一个这种半导体的方法，所得到的半导体，及其用途。制备方法使表面能够接收外延沉积的铁磁半导体，其可以包括来自元素周期表的III-V，IV和II-VI族的半导体，但GaAs除外，并且还包括至少一个锰，铁，钴，镍和铬。该方法包括在还原的锗基焊剂下对表面进行真空脱氧，使得在从所述表面解吸砷和氧化镓之后，后者具有单畴2×1重建，并且具有足够的平面和砷耗尽以防止砷从衬底到随后沉积的半导体的任何扩散。

2. 发明授权

US08154282B2 Magnetic field-sensitive component comprising a diluted magnetic semiconductor, devices incorporating same and use method 失效
标题翻译：包含稀释磁性半导体的磁场敏感组件，其结合的装置和使用方法
公开(公告)号：US08154282B2
公开(公告)日：2012-04-10
申请号：US12281841
申请日：2007-03-07
申请人： Patrick Warin , Matthieu Jamet
发明人： Patrick Warin , Matthieu Jamet
IPC分类号： G01R33/12
CPC分类号： G01R33/07 , G11C11/18 , H01L43/065
摘要： The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.
摘要翻译：本发明涉及一种磁场敏感元件，磁场感测装置和各自包含所述部件的存储器结构，以及一种使用所述部件检测磁场的方法。根据本发明的部件包括：至少一个稀释磁性半导体，用于沿着一个预定方向在所述半导体中产生电流的第一装置，以及用于产生表示横向于所述方向的霍尔电压的信号的第二装置，设计为半导体选自II / VI和IV / IV型半导体，并且包括对所述场敏感的区域，其形成全部或部分磁量子阱，其中是通过掺杂在半导体中并入的限定电流载流子并诱导所述阱铁磁交换相互作用。

3. 发明申请

US20090230954A1 FERROMAGNETIC SEMICONDUCTOR, METHOD FOR THE PRODUCTION THEREOF, COMPONENTS INCORPORATING THE SAME, AND CORRESPONDING USES OF SAID SEMICONDUCTOR 有权
标题翻译：光学半导体，其生产方法，与其组合的组分以及相关半导体的相应使用
公开(公告)号：US20090230954A1
公开(公告)日：2009-09-17
申请号：US12161995
申请日：2007-02-01
申请人： Matthieu Jamet , Yves Samson , Andre Barski , Thibaut Devillers
发明人： Matthieu Jamet , Yves Samson , Andre Barski , Thibaut Devillers
IPC分类号： G01R33/02 , H01L43/06 , H01L21/28
CPC分类号： H01F10/193 , B82Y25/00 , B82Y40/00 , C30B23/063 , C30B29/52 , G01R33/09 , G01R33/093 , H01F1/405 , H01F41/30
摘要： The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.
摘要翻译：本发明的铁磁半导体包括选自Mn，Fe，Co，Ni和Cr中的至少一种磁性元素，并且具有等于或高于350K，有利地为400K或更高的居里温度。该半导体具有一个耗尽磁性元件的矩阵，并且包含由富集磁性元件的列形成的不连续相，并且是铁磁性直到所述居里温度，以产生横向调制半导体在薄层平面上的组成。还公开了一种用于制造半导体的方法，用于将自旋注入或收集到另一个半导体中的二极管型电子部件或对磁场敏感的电子部件，以及半导体相关的使用到这样一个组件。

4. 发明授权

US07821818B2 Magnetoresistive tunnel junction magnetic device and its application to MRAM 有权
标题翻译：磁阻隧道结磁装置及其在MRAM中的应用
公开(公告)号：US07821818B2
公开(公告)日：2010-10-26
申请号：US12083398
申请日：2006-10-13
申请人： Bernard Dieny , Anatoly Vedyaev , Jérôme Faure-Vincent , Patrick Warin , Matthieu Jamet , Yves Samson
发明人： Bernard Dieny , Anatoly Vedyaev , Jérôme Faure-Vincent , Patrick Warin , Matthieu Jamet , Yves Samson
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , B82Y25/00 , B82Y40/00 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/305 , H01L27/222 , H01L43/08
摘要： The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
摘要翻译：磁性装置包括磁性装置，该磁性装置包括磁阻隧道结（100），其自身包括：具有沿固定方向的磁化的参考磁性层（120）存储磁性层（110），其具有在可变的方向上的磁化; 以及用作隧道势垒的中间层（130），其基本上是半导体或电绝缘的，并且将参考磁性层（120）与存储磁性层（110）分离。中间层（130）的电位分布在所述层（130）的厚度上是不对称的，以便产生作为施加电压的函数的不对称的电流响应。该器件适用于磁性随机存取存储器。

5. 发明申请

US20090251139A1 MAGNETIC FIELD-SENSITIVE COMPONENT COMPRISING A DILUTED MAGNETIC SEMICONDUCTOR, DEVICES INCORPORATING SAME AND USE METHOD 失效
标题翻译：包含一个稀释磁性半导体的磁场敏感元件，与其同时使用的器件和使用方法
公开(公告)号：US20090251139A1
公开(公告)日：2009-10-08
申请号：US12281841
申请日：2007-03-07
申请人： Patrick Warin , Matthieu Jamet
发明人： Patrick Warin , Matthieu Jamet
IPC分类号： G01R33/02 , H01L29/82 , G11B5/127
CPC分类号： G01R33/07 , G11C11/18 , H01L43/065
摘要： The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions.
摘要翻译：本发明涉及一种磁场敏感元件，磁场感测装置和各自包含所述部件的存储器结构，以及一种使用所述部件检测磁场的方法。根据本发明的部件包括：至少一个稀释磁性半导体，用于沿着一个预定方向在所述半导体中产生电流的第一装置，以及用于产生表示横向于所述方向的霍尔电压的信号的第二装置，设计为半导体选自II / VI和IV / IV型半导体，并且包括对所述场敏感的区域，其形成全部或部分磁量子阱，其中是通过掺杂在半导体中并入的限定电流载流子并诱导所述阱铁磁交换相互作用。

6. 发明授权

US08310018B2 Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor 有权
标题翻译：铁磁半导体，其制造方法，其结合的部件以及所述半导体的相应用途
公开(公告)号：US08310018B2
公开(公告)日：2012-11-13
申请号：US12161995
申请日：2007-02-01
申请人： Matthieu Jamet , Yves Samson , André Barski , Thibaut Devillers
发明人： Matthieu Jamet , Yves Samson , André Barski , Thibaut Devillers
IPC分类号： H01L29/82
CPC分类号： H01F10/193 , B82Y25/00 , B82Y40/00 , C30B23/063 , C30B29/52 , G01R33/09 , G01R33/093 , H01F1/405 , H01F41/30
摘要： The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.
摘要翻译：本发明的铁磁半导体包括选自Mn，Fe，Co，Ni和Cr中的至少一种磁性元素，并且具有等于或高于350K，有利地为400K或更高的居里温度。该半导体具有一个耗尽磁性元件的矩阵，并且包含由富集磁性元件的列形成的不连续相，并且是铁磁性直到所述居里温度，以产生横向调制半导体在薄层平面上的组成。还公开了一种用于制造半导体的方法，用于将自旋注入或收集到另一个半导体中的二极管型电子部件或对磁场敏感的电子部件，以及半导体相关的使用到这样一个组件。

7. 发明申请

US20090231909A1 Magnetoresistive Tunnel Junction Magnetic Device and Its Application to MRAM 有权
标题翻译：磁阻隧道结磁装置及其在MRAM中的应用
公开(公告)号：US20090231909A1
公开(公告)日：2009-09-17
申请号：US12083398
申请日：2006-10-13
申请人： Bernard Dieny , Anatoly Vedyaev , Jerome Faure-Vincent , Patrick Warin , Matthieu Jamet , Yves Samson
发明人： Bernard Dieny , Anatoly Vedyaev , Jerome Faure-Vincent , Patrick Warin , Matthieu Jamet , Yves Samson
IPC分类号： G11C11/00 , H01L29/82 , G11C11/14
CPC分类号： G11C11/15 , B82Y25/00 , B82Y40/00 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/305 , H01L27/222 , H01L43/08
摘要： The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
摘要翻译：磁性装置包括磁性装置，该磁性装置包括磁阻隧道结（100），其自身包括：具有沿固定方向的磁化的参考磁性层（120）存储磁性层（110），其具有在可变的方向上的磁化; 以及用作隧道势垒的中间层（130），其基本上是半导体或电绝缘的，并且将参考磁性层（120）与存储磁性层（110）分离。中间层（130）的电位分布在所述层（130）的厚度上是不对称的，以便产生作为施加电压的函数的不对称的电流响应。该器件适用于磁性随机存取存储器。

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