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1. 发明申请

US20140308530A1 NOVEL CYANATE ESTER COMPOUND AND METHOD FOR PRODUCING THE SAME, AND CURABLE RESIN COMPOSITION COMPRISING THE COMPOUND, AND CURED PRODUCT THEREOF COMPOSITION 审中-公开
标题翻译：新型氰基酯化合物及其制造方法以及包含该化合物的可固化树脂组合物及其固化产物
公开(公告)号：US20140308530A1
公开(公告)日：2014-10-16
申请号：US14237426
申请日：2012-07-31
申请人： Yuuichi Sugano , Masayuki Katagiri , Seiji Kita , Daisuke Ohno , Masanobu Sogame
发明人： Yuuichi Sugano , Masayuki Katagiri , Seiji Kita , Daisuke Ohno , Masanobu Sogame
IPC分类号： C08G10/04 , C08L63/00 , B32B15/098 , C09K3/10 , C09J161/18 , C08L61/18 , C08L71/00
CPC分类号： C08G10/04 , B32B5/022 , B32B5/024 , B32B7/12 , B32B15/098 , B32B15/14 , B32B2250/40 , B32B2260/023 , B32B2260/046 , B32B2262/0261 , B32B2262/0269 , B32B2262/0276 , B32B2262/101 , B32B2307/3065 , C08G14/12 , C08G73/0655 , C08J5/24 , C08J2361/34 , C08L61/18 , C08L61/34 , C08L63/00 , C08L71/00 , C08L79/04 , C09J161/18 , C09J161/34 , C09J179/04 , C09K3/1006 , H01L23/29 , H01L2924/0002 , Y10T428/31688 , H01L2924/00
摘要： To provide a novel cyanate ester compound that can realize a cured product having low dielectric constant and dielectric loss tangent, and excellent flame retardancy and heat resistance, and moreover has relatively low viscosity, excellent solvent solubility, and also excellent handling properties, and a method for producing the cyanate ester compound, and a curable resin composition and the like using the cyanate ester compound. A phenol-modified xylene formaldehyde resin is cyanated.
摘要翻译：为了提供能够实现低介电常数和介电损耗角正切，优异的阻燃性和耐热性的固化物的新型氰酸酯化合物，另外具有较低的粘度，优异的溶剂溶解性和优异的操作性，以及使用氰酸酯化合物的固化性树脂组合物等。苯酚改性的二甲苯甲醛树脂被氰化。

2. 发明授权

US08648464B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08648464B2
公开(公告)日：2014-02-11
申请号：US13413854
申请日：2012-03-07
申请人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
发明人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
IPC分类号： H01L23/48
CPC分类号： H01L21/02639 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/02645 , H01L21/28556 , H01L21/32051 , H01L21/76846 , H01L21/76877 , H01L23/53276 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
摘要翻译：根据一个实施例，公开了一种半导体器件。该器件包括半导体衬底和半导体衬底上方的互连。互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。助催化剂层包括与催化剂层接触的部分。该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

3. 发明授权

US08529696B2 Method for producing hexagonal boron nitride single crystals 失效
标题翻译：生产六方氮化硼单晶的方法
公开(公告)号：US08529696B2
公开(公告)日：2013-09-10
申请号：US13561695
申请日：2012-07-30
申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
发明人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
IPC分类号： C30B9/00
CPC分类号： C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
摘要： A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkaline earth metal, or boronitride of alkali metal and the boronitride of alkaline earth metal.
摘要翻译：一种生产六方氮化硼单晶的方法，包括将氮化硼晶体与溶剂混合从而获得混合物，在高温高压下加热熔化混合物，从而获得熔融混合物，并将熔融混合物重结晶，从而产生六方硼氮化物单晶，其中溶剂是碱土金属的硼氮化物，碱金属的硼氮化物和碱土金属的硼氮化物。

4. 发明授权

US08258603B2 Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal 失效
标题翻译：固态高亮度远紫外发光元件包括高纯度六方氮化硼单晶
公开(公告)号：US08258603B2
公开(公告)日：2012-09-04
申请号：US12588462
申请日：2009-10-16
申请人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
发明人： Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
IPC分类号： H01L31/00
CPC分类号： C30B29/38 , B01J3/062 , B01J3/065 , B01J2203/0645 , B01J2203/066 , B01J2203/069 , C09K11/63 , H01S5/32341
摘要： A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
摘要翻译：固态远紫外线发光元件是通过电子束照射激发的六方氮化硼单晶形成的，以在波长235nm以下的远紫外区域发射具有最大发光峰的远紫外光。

5. 发明申请

US20120052680A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20120052680A1
公开(公告)日：2012-03-01
申请号：US13041543
申请日：2011-03-07
申请人： Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
发明人： Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
IPC分类号： H01L21/28
CPC分类号： H01L21/76879 , H01L21/28556 , H01L21/76876 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： a manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.
摘要翻译：半导体衬底的制造方法包括以下步骤：在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。

6. 发明授权

US08053678B2 Interconnection, electronic device and method for manufacturing an electronic device 有权
标题翻译：互连，电子设备和制造电子设备的方法
公开(公告)号：US08053678B2
公开(公告)日：2011-11-08
申请号：US12062112
申请日：2008-04-03
申请人： Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Tomio Ono , Mariko Suzuki
发明人： Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Tomio Ono , Mariko Suzuki
IPC分类号： H05K1/11
CPC分类号： H05K3/4038 , B82Y10/00 , H01L21/288 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H05K2201/026 , H05K2201/0323 , Y10S977/742 , Y10T29/49155 , H01L2924/00
摘要： An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members.
摘要翻译：互连包括一组导电构件，每个导电构件由具有连接到第一导电膜的端部的碳纳米管制成，另一端连接到与第一导电膜分离的第二导电膜; 和各自具有金刚石晶体结构的碳颗粒分散在导电构件之间。

7. 发明申请

US20110057322A1 CARBON NANOTUBE INTERCONNECT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：碳纳米管互连及其制造方法
公开(公告)号：US20110057322A1
公开(公告)日：2011-03-10
申请号：US12876669
申请日：2010-09-07
申请人： Noriaki MATSUNAGA , Makoto Wada , Yosuke Akimoto , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
发明人： Noriaki MATSUNAGA , Makoto Wada , Yosuke Akimoto , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76831 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L21/76879 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2224/13
摘要： According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on the interlayer dielectric film. The contact hole is formed in the interlayer dielectric film between the first interconnection layer and the second interconnection layer. The carbon nanotubes are formed in the contact hole. The carbon nanotubes have a first end connected to the first interconnection layer and a second end connected to the second interconnection layer. The film is formed between the interlayer dielectric film and the second interconnection layer. The film has a portion filled between the second ends of the carbon nanotubes.
摘要翻译：根据一个实施例，碳纳米管互连包括第一互连层，层间电介质膜，第二互连层，接触孔，多个碳纳米管和膜。层间绝缘膜形成在第一互连层上。第二互连层形成在层间绝缘膜上。接触孔形成在第一互连层和第二互连层之间的层间绝缘膜中。碳纳米管形成在接触孔中。碳纳米管具有连接到第一互连层的第一端和连接到第二互连层的第二端。该膜形成在层间绝缘膜和第二互连层之间。该膜具有填充在碳纳米管的第二端之间的部分。

8. 发明申请

US20080245553A1 INTERCONNECTION, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE 有权
标题翻译：互连，电子设备和制造电子设备的方法
公开(公告)号：US20080245553A1
公开(公告)日：2008-10-09
申请号：US12062112
申请日：2008-04-03
申请人： Tadashi SAKAI , Naoshi Sakuma , Masayuki Katagiri , Tomio Ono , Mariko Suzuki
发明人： Tadashi SAKAI , Naoshi Sakuma , Masayuki Katagiri , Tomio Ono , Mariko Suzuki
IPC分类号： H05K1/09 , H01B5/08 , H05K3/02
CPC分类号： H05K3/4038 , B82Y10/00 , H01L21/288 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H05K2201/026 , H05K2201/0323 , Y10S977/742 , Y10T29/49155 , H01L2924/00
摘要： An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members.
摘要翻译：互连包括一组导电构件，每个导电构件由具有连接到第一导电膜的端部的碳纳米管制成，另一端连接到与第一导电膜分离的第二导电膜; 和各自具有金刚石晶体结构的碳颗粒分散在导电构件之间。

9. 发明授权

US06916458B2 Process for producing hydrogen-containing gas 有权
标题翻译：含氢气体的制造方法
公开(公告)号：US06916458B2
公开(公告)日：2005-07-12
申请号：US10291375
申请日：2002-11-12
申请人： Yasuhiro Kushida , Masayuki Katagiri , Hutoshi Ikoma , Shigeyuki Hirose , Yasushi Hiramatsu , Mikio Yoneoka
发明人： Yasuhiro Kushida , Masayuki Katagiri , Hutoshi Ikoma , Shigeyuki Hirose , Yasushi Hiramatsu , Mikio Yoneoka
IPC分类号： B01J23/56 , B01J23/60 , B01J23/62 , B01J23/644 , B01J23/652 , B01J23/89 , B01J35/04 , B01J37/02 , B01J37/03 , C01B3/32 , C01B3/26
CPC分类号： B01J23/6447 , B01J23/56 , B01J23/60 , B01J23/62 , B01J23/6522 , B01J23/8953 , B01J23/8993 , B01J35/04 , B01J37/0215 , B01J37/03 , C01B3/326 , C01B2203/0244 , C01B2203/1041 , C01B2203/1064 , C01B2203/1076 , C01B2203/1223 , Y02P20/52
摘要： There is disclosed a process for producing a hydrogen-containing gas, which comprises reacting methanol, steam and oxygen in the presence of a catalyst comprising palladium, zinc and at least one metal selected from the group consisting of chromium, gallium, copper, indium, bismuth and platinum. That is to say, the process include the following four aspects: (I) a process which comprises reacting methanol, steam and oxygen in the presence of a catalyst comprising palladium, zinc, and either or both of chromium and gallium; (II) a process which comprises reacting methanol, steam and oxygen in the presence of a catalyst comprising palladium, zinc, copper and chromium; (III) a process which comprises reacting methanol, steam and oxygen in the presence of a catalyst comprising palladium and zinc, or chromium added thereto optionally, and either or both of indium and bismuth; and (IV) a process which comprises reacting methanol, steam and oxygen in the presence of a catalyst comprising zinc oxide, palladium and platinum. The use of the above steam-reforming catalyst having a high activity, high selectivity and sufficient durability makes it possible to produce a hydrogen-containing gas which is composed principally of hydrogen and minimized in CO concentration in an industrially advantageous manner through an auto thermal reformer where methanol, steam and oxygen are reacted with one another.
摘要翻译：公开了一种生产含氢气体的方法，该方法包括使甲醇，蒸汽和氧气在催化剂存在下反应，所述催化剂包含钯，锌和至少一种选自铬，镓，铜，铟，铋和铂。也就是说，该方法包括以下四个方面：（I）包括在包含钯，锌以及铬和镓中的任一种或两者的催化剂存在下使甲醇，蒸汽和氧反应的方法; （II）包括在包含钯，锌，铜和铬的催化剂存在下使甲醇，蒸汽和氧气反应的方法; （III）一种方法，其包括在催化剂存在下，使甲醇，蒸汽和氧气反应，所述催化剂包含钯和锌，或任选地加入其中的铬，以及铟和铋中的任一种或两者; 和（IV）包括在包含氧化锌，钯和铂的催化剂存在下使甲醇，蒸汽和氧气反应的方法。使用具有高活性，高选择性和足够耐久性的上述蒸汽重整催化剂使得可以通过自动热重整器以工业上有利的方式制备主要由氢组成并且CO浓度最小化的含氢气体其中甲醇，蒸汽和氧气彼此反应。

10. 发明授权

US06677694B1 DC motor with brushes 失效
标题翻译：直流电机带刷子
公开(公告)号：US06677694B1
公开(公告)日：2004-01-13
申请号：US09665777
申请日：2000-09-18
申请人： Hiromitsu Takei , Masayuki Katagiri
发明人： Hiromitsu Takei , Masayuki Katagiri
IPC分类号： H02K1300
CPC分类号： H02K5/145 , H01R39/24 , H01R39/39
摘要： A DC motor with brushes includes a rotary shaft, an armature rotatable with the rotary shaft, a stator magnet disposed opposite to the armature, a commutator affixed on the side of the armature, and a pair of inside and outside brushes retained by a brush holder in a manner that the brushes are brought in contact with a peripheral surface of the commutator. The pair of brushes has an identical configuration. The outside brush is bent in a direction away from the other brush when the pair of the brushes is retained by the brush holder. The outside brush is further bend when in contact with the commutator. The inside brush has an end section extending toward an intermediate point of the outer brush in a longitudinal direction thereof. Each of the outside brush and the inside brush has a base section that is affixed to a terminal and an end section that is brought in contact with the commutator. The end section is bent with respect to the base section such that each of the outside brush and the inside brush defines a generally L-shape.
摘要翻译：具有刷子的直流电动机包括旋转轴，可与旋转轴一起旋转的电枢，与电枢相对设置的定子磁体，固定在电枢侧的换向器，以及由电刷架保持的一对内外刷以使刷子与换向器的外周表面接触的方式。这对刷子具有相同的配置。当一对刷子被刷架保持时，外部刷子沿远离另一个刷子的方向弯曲。当与换向器接触时，外部刷子进一步弯曲。内刷具有沿着外刷的长度方向朝向外刷的中点延伸的端部。外部刷子和内部刷子中的每一个具有固定到终端的基部和与换向器接触的端部。端部相对于基部弯曲，使得外部刷子和内部刷子中的每一个限定为大致L形。

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