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1. 发明申请

WO2012047812A2 ATOMIC LAYER DEPOSITION OF SILICON NITRIDE USING DUAL-SOURCE PRECURSOR AND INTERLEAVED PLASMA 审中-公开
标题翻译：氮化硅原子层沉积用双源前体和交错等离子体
公开(公告)号：WO2012047812A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054635
申请日：2011-10-03
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU
发明人： MALLICK ABHIJIT BASU
IPC分类号： H01L21/314 , H01L21/205
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45534 , C23C16/45542 , H01L21/02274 , H01L21/0228
摘要： Atomic layer deposition using precursor having both nitrogen and silicon components is described. Deposition precursor contains molecules which supply both nitrogen and silicon to growing film of silicon nitride. Silicon-nitrogen bonds may be present in precursor molecule, but hydrogen and/or halogens may also be present. Growth substrate may be terminated in a variety of ways and exposure to deposition precursor displaces species from outer layer of growth substrate, replacing them with an atomic-scale silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer grows until one complete layer is produced and then stops (self-limiting growth kinetics). Subsequent exposure to a plasma excited gas modifies the chemical termination of the surface so growth step may be repeated. Presence of both silicon and nitrogen in deposition precursor molecule increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of same thickness.
摘要翻译：描述了使用具有氮和硅组分的前体的原子层沉积。沉积前体含有向氮化硅生长膜提供氮和硅的分子。硅 - 氮键可以存在于前体分子中，但是氢和/或卤素也可以存在。生长底物可以以各种方式终止，并且暴露于沉积前体从生长底物的外层置换物质，用原子尺度含硅和氮的层代替它们。含硅和氮的层生长直至产生一个完整的层，然后停止（自限生长动力学）。随后暴露于等离子体激发的气体会改变表面的化学终止，因此可以重复生长步骤。沉积前体分子中硅和氮两者的存在增加了每个循环的沉积，从而减少前体曝光的数量以生长相同厚度的膜。

2. 发明申请

WO2012033717A2 EMBEDDED CATALYST FOR ATOMIC LAYER DEPOSITION OF SILICON OXIDE 审中-公开
标题翻译：嵌入式催化剂用于原子层沉积氧化硅
公开(公告)号：WO2012033717A2
公开(公告)日：2012-03-15
申请号：PCT/US2011050391
申请日：2011-09-02
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU
发明人： MALLICK ABHIJIT BASU
IPC分类号： H01L21/316 , C23C16/42
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/45534 , C23C16/56 , H01L21/02216 , H01L21/0228 , H01L21/0234
摘要： Catalyzed atomic layer deposition from a reduced number of precursors is described. A deposition precursor contains silicon, oxygen and a catalytic ligand. A hydroxyl-terminated substrate is exposed to the deposition precursor to form a silicon bridge bond between two surface-bound oxygens. The surface-bound oxygens were part of two surface-bound hydroxyl groups and the adsorption of the deposition precursor liberates the hydrogens. The silicon atom is also chemically-bound to one or two additional oxygen atoms which were already chemically-bound to the silicon within a same deposition precursor molecule. At least one of the additional oxygen atoms is further chemically-bound to the catalytic ligand either directly or by way of a hydrocarbon chain. Further exposure of the substrate to moisture (H2O) results in displacement of the additional oxygen which are replaced by hydroxyl groups from the moisture. The surface is again hydroxyl-terminated and the process may be repeated. The catalytic nature of the reaction enables the deposition to occur at low substrate temperatures. The chemically-embedded nature of the catalyst increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of the same thickness.
摘要翻译：描述了由数量减少的前体催化的原子层沉积。沉积前体含有硅，氧和催化配体。将羟基封端的基底暴露于沉积前体以在两个表面结合的氧之间形成硅桥键。表面结合的氧是两个表面结合的羟基的一部分，并且沉积前体的吸附释放氢。硅原子还与一个或两个额外的氧原子化学键合，这些氧原子已经在同一沉积前体分子内与硅化学键合。至少一个另外的氧原子进一步直接或通过烃链化学键合到催化配体上。将衬底进一步暴露于水分（H 2 O）导致额外的氧被羟基置换而从湿气中置换。表面再次被羟基封端并且该过程可以重复。反应的催化性质使得沉积能够在低基体温度下发生。催化剂的化学包埋特性增加了每个循环的沉积量，从而减少了前体曝光的数量以生长相同厚度的膜。

3. 发明申请

WO2011084752A2 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 审中-公开
标题翻译：用于放射性组分CVD的现场臭氧固化
公开(公告)号：WO2011084752A2
公开(公告)日：2011-07-14
申请号：PCT/US2010061356
申请日：2010-12-20
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/314
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

4. 发明申请

WO2010039363A3 METHODS FOR FORMING SILICON NITRIDE BASED FILM OR SILICON CARBON BASED FILM 审中-公开
标题翻译：形成基于硅的薄膜或硅基膜的方法
公开(公告)号：WO2010039363A3
公开(公告)日：2010-06-03
申请号：PCT/US2009055073
申请日：2009-08-26
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU , NEMANI SRINIVAS D
发明人： MALLICK ABHIJIT BASU , NEMANI SRINIVAS D
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/3148 , C23C16/325 , C23C16/347 , C23C16/401 , C23C16/505 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02274 , H01L21/31633 , H01L21/3185
摘要： A method for depositing a silicon nitride based dielectric layer is provided. The method includes introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber. The silicon precursor has a N-Si-H bond, N-Si-Si bond and/or Si-Si-H bond. The radical nitrogen precursor is substantially free from included oxygen. The radical nitrogen precursor is generated outside the deposition chamber. The silicon precursor and the radical nitrogen precursor interact to form the silicon nitride based dielectric layer.
摘要翻译：提供了一种沉积氮化硅基电介质层的方法。该方法包括将硅前体和自由基氮前体引入沉积室。硅前体具有N-Si-H键，N-Si-Si键和/或Si-Si-H键。自由基氮前体基本上不含有氧。在沉积室外产生自由基氮前体。硅前体和自由基氮前体相互作用以形成基于氮化硅的介电层。

5. 发明申请

WO2013036667A3 FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的可流动的碳 - 氮层
公开(公告)号：WO2013036667A3
公开(公告)日：2013-05-02
申请号：PCT/US2012053999
申请日：2012-09-06
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU , INGLE NITIN K , WANG LINLIN , UNDERWOOD BRIAN S
发明人： MALLICK ABHIJIT BASU , INGLE NITIN K , WANG LINLIN , UNDERWOOD BRIAN S
IPC分类号： H01L21/318 , H01L21/205
CPC分类号： H01L21/02274 , C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/0234 , H01L21/31111
摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
摘要翻译：描述了用于在半导体衬底上形成电介质层的方法。该方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。含硅前体和赋能的含氮前体可在化学气相沉积室中反应，以在衬底上沉积可流动的硅 - 碳 - 氮材料。该方法可以进一步包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成介电层。

6. 发明申请

WO2012048041A3 AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS 审中-公开
标题翻译：胺固化硅 - 氮化物膜
公开(公告)号：WO2012048041A3
公开(公告)日：2012-06-28
申请号：PCT/US2011054981
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , SOLIS EARL OSMAN , JI LILI , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： SOLIS EARL OSMAN , JI LILI , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： C08J7/04 , C08J5/18 , C08L83/00 , C09D183/00 , H01B3/46
CPC分类号： H01L21/02326 , C23C16/345 , C23C16/56 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
摘要翻译：描述形成电介质层的方法。所述方法可以包括在基底上形成含硅 - 氮和氢的层。这些方法包括将含氮 - 和氢的含氧层进行臭氧固化，以将含氮 - 和氢的层转化为含硅和氧的层。在臭氧固化之后，在退火之前将该层暴露于低温下的胺 - 水组合。胺固化的存在允许在退火期间在较低温度下转化为含硅和氧的层更快速和完全地发生。胺固化还使得退火能够使用较少的氧化环境来实现转化为含硅和氧的层。

7. 发明申请

WO2012039982A3 AIR GAP FORMATION 审中-公开
标题翻译：空气隙形成
公开(公告)号：WO2012039982A3
公开(公告)日：2012-06-14
申请号：PCT/US2011051226
申请日：2011-09-12
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/764 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/7682 , H01L21/76837 , H01L2221/1047
摘要： A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
摘要翻译：在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。

8. 发明申请

WO2012047812A3 ATOMIC LAYER DEPOSITION OF SILICON NITRIDE USING DUAL-SOURCE PRECURSOR AND INTERLEAVED PLASMA 审中-公开
公开(公告)号：WO2012047812A3
公开(公告)日：2012-04-12
申请号：PCT/US2011/054635
申请日：2011-10-03
申请人： APPLIED MATERIALS, INC. , MALLICK, Abhijit Basu
发明人： MALLICK, Abhijit Basu
IPC分类号： H01L21/314 , H01L21/205
摘要： Atomic layer deposition using precursor having both nitrogen and silicon components is described. Deposition precursor contains molecules which supply both nitrogen and silicon to growing film of silicon nitride. Silicon-nitrogen bonds may be present in precursor molecule, but hydrogen and/or halogens may also be present. Growth substrate may be terminated in a variety of ways and exposure to deposition precursor displaces species from outer layer of growth substrate, replacing them with an atomic-scale silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer grows until one complete layer is produced and then stops (self-limiting growth kinetics). Subsequent exposure to a plasma excited gas modifies the chemical termination of the surface so growth step may be repeated. Presence of both silicon and nitrogen in deposition precursor molecule increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of same thickness.

9. 发明申请

WO2012033717A3 EMBEDDED CATALYST FOR ATOMIC LAYER DEPOSITION OF SILICON OXIDE 审中-公开
公开(公告)号：WO2012033717A3
公开(公告)日：2012-03-15
申请号：PCT/US2011/050391
申请日：2011-09-02
申请人： APPLIED MATERIALS, INC. , MALLICK, Abhijit Basu
发明人： MALLICK, Abhijit Basu
IPC分类号： H01L21/316 , C23C16/42
摘要： Catalyzed atomic layer deposition from a reduced number of precursors is described. A deposition precursor contains silicon, oxygen and a catalytic ligand. A hydroxyl-terminated substrate is exposed to the deposition precursor to form a silicon bridge bond between two surface-bound oxygens. The surface-bound oxygens were part of two surface-bound hydroxyl groups and the adsorption of the deposition precursor liberates the hydrogens. The silicon atom is also chemically-bound to one or two additional oxygen atoms which were already chemically-bound to the silicon within a same deposition precursor molecule. At least one of the additional oxygen atoms is further chemically-bound to the catalytic ligand either directly or by way of a hydrocarbon chain. Further exposure of the substrate to moisture (H2O) results in displacement of the additional oxygen which are replaced by hydroxyl groups from the moisture. The surface is again hydroxyl-terminated and the process may be repeated. The catalytic nature of the reaction enables the deposition to occur at low substrate temperatures. The chemically-embedded nature of the catalyst increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of the same thickness.

10. 发明申请

WO2011084223A3 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开
标题翻译：在可流动CVD过程中形成的介电材料上进行的湿氧化过程
公开(公告)号：WO2011084223A3
公开(公告)日：2011-09-01
申请号：PCT/US2010055402
申请日：2010-11-04
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： H01L21/762
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

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