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    • 3. 发明授权
    • Array substrate for a liquid crystal display and method for fabricating thereof
    • 液晶显示器用阵列基板及其制造方法
    • US06788357B2
    • 2004-09-07
    • US09984257
    • 2001-10-29
    • Kyo-Ho Moon
    • Kyo-Ho Moon
    • G02F1136
    • G02F1/136213H01L27/1255
    • An array substrate for a liquid crystal display device includes a substrate, a plurality of thin film transistors formed on the substrate, each thin film transistor includes a gate electrode, a first gate insulation layer, a second gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, a plurality of gate lines, a plurality of data lines disposed orthogonal to the plurality of gate lines, a plurality of pixel electrodes disposed at pixel regions defined by intersections of the plurality of gate lines and the plurality of data lines, each pixel electrode electrically contacting each drain electrode of the plurality of thin film transistors, and a plurality of storage capacitors each including a portion of each gate line as a first capacitor electrode, the first gate insulation layer as a dielectric layer, and a capacitor electrode electrically communicating with each pixel electrode and functioning as a second capacitor electrode with a portion of each pixel electrode.
    • 液晶显示装置用阵列基板包括基板,形成在基板上的多个薄膜晶体管,各薄膜晶体管包括栅电极,第一栅极绝缘层,第二栅极绝缘层,有源层, 欧姆接触层,源电极和漏电极,多条栅极线,与多条栅极线正交设置的多条数据线,多个像素电极,设置在由多条栅极线 并且多个数据线,每个像素电极与多个薄膜晶体管的每个漏电极电接触,以及多个存储电容器,每个存储电容器包括每个栅极线的一部分作为第一电容器电极,第一栅极绝缘层为 电介质层和与每个像素电极电连通并用作第二电容器电极的电容器电极 每个像素电极的部分。
    • 4. 发明授权
    • Method of preventing a data pad of an array substrate from overetching
    • 防止阵列基板的数据焊盘过度蚀刻的方法
    • US06746887B1
    • 2004-06-08
    • US09784088
    • 2001-02-16
    • Kyo-Ho MoonSoon-Sung Yoo
    • Kyo-Ho MoonSoon-Sung Yoo
    • H01L2100
    • G02F1/1368G02F2001/136236
    • A method of fabricating an array substrate for use in an LCD device which can be used in a four-, five- or six-mask process includes simultaneously etching layers formed over gate and data pads. When performing a photolithography process, photoresist remains over the data pad and acts as an etch stopper. And thus, while etching the layers over the gate pad, the layers over the data pad are etched without any damage to the data pad and without overetching the data pad. Therefore, defects caused by the resistance between the data pad and the data pad electrode do not occur, and pixel defects in the LCD device are prevented. Moreover, the manufacturing yield increases when this method is used.
    • 制造可用于四,五或六掩模工艺的LCD装置中使用的阵列基板的方法包括同时蚀刻形成在栅极和数据焊盘上的层。 当进行光刻工艺时,光致抗蚀剂保留在数据焊盘上,并用作蚀刻停止层。 因此,当在栅极焊盘上蚀刻层时,在数据焊盘上的层被蚀刻而不会对数据焊盘造成任何损坏,而不会过蚀刻数据焊盘。 因此,不会发生由数据焊盘和数据焊盘电极之间的电阻引起的缺陷,并且防止了LCD器件中的像素缺陷。 此外,当使用该方法时,制造产量增加。
    • 8. 发明申请
    • THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME
    • 薄膜晶体管及其制造方法
    • US20110084278A1
    • 2011-04-14
    • US12576591
    • 2009-10-09
    • Yong-Soo ChoKyo-Ho MoonHoon Choi
    • Yong-Soo ChoKyo-Ho MoonHoon Choi
    • H01L33/00H01L21/336
    • H01L29/4908H01L27/1214H01L29/78648
    • The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole.
    • 液晶显示装置中的薄膜晶体管及其制造方法技术领域本发明涉及液晶显示装置中的薄膜晶体管及其制造方法,薄膜晶体管可以通过包括形成在绝缘基板上的第一栅电极构成, 形成在包括所述第一栅极的所述绝缘基板上的第一栅极绝缘膜; 形成在第一栅极绝缘膜上的有源层; 源极/漏电极,形成在有源层上,并布置在第一栅电极的两侧; 形成在所述有源层上的第二栅极绝缘膜和包括所述源极/漏极的所述第一栅极绝缘膜,并且设置有用于使所述漏极的一部分露出的接触孔; 在所述第二栅极绝缘膜上与所述第一栅电极重叠的第二栅电极; 以及通过接触孔与漏电极电连接的像素电极。
    • 9. 发明授权
    • Array substrate for a liquid crystal display and method for fabricating thereof
    • 液晶显示器用阵列基板及其制造方法
    • US07696026B2
    • 2010-04-13
    • US12068233
    • 2008-02-04
    • Kyo-Ho Moon
    • Kyo-Ho Moon
    • H01L21/84
    • G02F1/136213H01L27/1255
    • An array substrate for a liquid crystal display device includes a substrate, a plurality of thin film transistors formed on the substrate, each thin film transistor includes a gate electrode, a first gate insulation layer, a second gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, a plurality of gate lines, a plurality of data lines disposed orthogonal to the plurality of gate lines, a plurality of pixel electrodes disposed at pixel regions defined by intersections of the plurality of gate lines and the plurality of data lines, each pixel electrode electrically contacting each drain electrode of the plurality of thin film transistors, and a plurality of storage capacitors each including a portion of each gate line as a first capacitor electrode, the first gate insulation layer as a dielectric layer, and a capacitor electrode electrically communicating with each pixel electrode and functioning as a second capacitor electrode with a portion of each pixel electrode.
    • 液晶显示装置用阵列基板包括基板,形成在基板上的多个薄膜晶体管,各薄膜晶体管包括栅电极,第一栅极绝缘层,第二栅极绝缘层,有源层, 欧姆接触层,源电极和漏电极,多条栅极线,与多条栅极线正交设置的多条数据线,多个像素电极,设置在由多条栅极线 并且多个数据线,每个像素电极与多个薄膜晶体管的每个漏电极电接触,以及多个存储电容器,每个存储电容器包括每个栅极线的一部分作为第一电容器电极,第一栅极绝缘层为 电介质层和与每个像素电极电连通并用作第二电容器电极的电容器电极 每个像素电极的部分。