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1. 发明授权

US06164224A Buttonhole darning sewing machine 失效
标题翻译：扣眼机缝纫机
公开(公告)号：US06164224A
公开(公告)日：2000-12-26
申请号：US105475
申请日：1998-06-26
申请人： Mitsuhiro Tachikawa , Kazuaki Ishii , Yasuaki Hirano , Takashi Tsukioka , Toshiaki Kasuga , Tsuguo Kubota
发明人： Mitsuhiro Tachikawa , Kazuaki Ishii , Yasuaki Hirano , Takashi Tsukioka , Toshiaki Kasuga , Tsuguo Kubota
IPC分类号： D05B3/02 , D05B3/06 , D05B27/00 , D05B29/06 , D05B37/02 , D05B65/00 , D05B69/36 , D05B19/12 , D05B69/10
CPC分类号： D05B27/00 , D05B3/02 , D05B3/06 , D05B29/06 , D05B37/02 , D05B65/00 , D05B69/36 , D05D2205/085 , D05D2305/345
摘要： A cloth cutting knife 16 is structured such that the length of the cutting edge thereof is set shorter than the length of the side sewing portions of a buttonhole to be formed, and a buttonhole having a length corresponding to the length of the right and left side sewing portions can be formed by moving up and down the cloth cutting knife 16 two or more times. The cloth cutting knife 16 is moved up and down at least once during formation of the stitches of the right and left side sewing portions. Also, the cloth cutting knife 16 is moved up and down once each time a given number of stitches of the right and left side sewing portions are formed. The given number of stitches is set in accordance with both of the length of the cutting edge of the cloth cutting knife 16 and the length of the buttonhole to be formed.
摘要翻译：布切割刀16被构造为使得其切割边缘的长度被设定为短于要形成的纽扣孔的侧面缝合部分的长度，并且具有对应于左侧和右侧的长度的长度的纽扣孔可以通过使切布刀16上下移动两次以上来形成缝制部。在形成左右侧缝合部的线圈的过程中，切布刀16上下移动至少一次。此外，每当形成左右侧缝纫部的给定数量的线圈时，切布刀16上下移动一次。根据切布刀16的切削刃的长度和要形成的纽扣孔的长度，设定给定数量的线圈。

2. 发明授权

US4889831A Method of forming a high temperature stable ohmic contact to a III-V substrate 失效
标题翻译：形成与III-V基板的高温稳定欧姆接触的方法
公开(公告)号：US4889831A
公开(公告)日：1989-12-26
申请号：US126339
申请日：1987-11-30
申请人： Kazuaki Ishii , Toshiro Futatsugi , Toshio Oshima , Toshio Fujii , Naoki Yokoyama , Akihiro Shibatomi
发明人： Kazuaki Ishii , Toshiro Futatsugi , Toshio Oshima , Toshio Fujii , Naoki Yokoyama , Akihiro Shibatomi
IPC分类号： H01L29/73 , H01L21/28 , H01L21/285 , H01L21/331 , H01L21/337 , H01L29/205 , H01L29/45 , H01L29/737 , H01L29/808
CPC分类号： H01L29/66924 , H01L21/28575 , H01L29/452 , H01L29/66318 , H01L29/7371 , H01L29/808 , Y10S148/01 , Y10S148/065
摘要： An electrode structure of an electrode of a refractory metal or a silicide thereof on a layer of In.sub.x Ga.sub.1-x As (0
摘要翻译：在III-V族化合物半导体的基板上的In x Ga 1-x As（0

3. 发明授权

US08530936B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08530936B2
公开(公告)日：2013-09-10
申请号：US13186009
申请日：2011-07-19
申请人： Kazuaki Ishii
发明人： Kazuaki Ishii
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/404 , H01L29/41758 , H01L29/66431
摘要： A semiconductor device includes a source electrode and a drain electrode formed on an active region of the semiconductor layer, a gate electrode formed on the active region of the semiconductor layer, a first insulating film formed on the semiconductor layer and covering the gate electrode, the first insulating film having a step portion following a shape of the gate electrode, a first field plate formed on the insulating film and located between the gate electrode and the drain electrode and separated from the step portion, a second insulating film formed on the first insulating film to cover the step portion and the first field plate, and a shield electrode formed on the second insulating film, the shield electrode extending from a portion located above the first field plate and a portion located above the gate electrode.
摘要翻译：半导体器件包括形成在半导体层的有源区上的源电极和漏电极，形成在半导体层的有源区上的栅电极，形成在半导体层上并覆盖栅电极的第一绝缘膜，第一绝缘膜，具有与栅电极的形状相邻的阶梯部，形成在绝缘膜上并且位于栅电极与漏电极之间并与台阶部分离的第一绝缘膜，形成在第一绝缘层上的第二绝缘膜覆盖台阶部分和第一场板的屏蔽电极和形成在第二绝缘膜上的屏蔽电极，屏蔽电极从位于第一场板上方的部分延伸，以及位于栅电极上方的部分。

4. 发明授权

US5848573A Button hole sewing machine 失效
标题翻译：钮扣缝纫机
公开(公告)号：US5848573A
公开(公告)日：1998-12-15
申请号：US685388
申请日：1996-07-23
申请人： Yasuaki Hirano , Kazuaki Ishii , Mitsuhiro Tachikawa
发明人： Yasuaki Hirano , Kazuaki Ishii , Mitsuhiro Tachikawa
IPC分类号： D05B29/00 , D05B3/06 , D05B29/06 , D05B65/00 , D05B65/02
CPC分类号： D05B65/00 , D05B3/06 , D05B29/06
摘要： A buttonhole sewing machine includes a holding mechanism attached to a holder arm which reciprocates in a direction perpendicular to an amplitude direction of a needle. The holding mechanism includes a workpiece holder plate and constitutes a parallelogram linkage. The holding mechanism maintains a parallelogram shape even when the holder plate slants on a fold of the workpiece, and securely holds the workpiece. This buttonhole sewing machine also includes a cutting mechanism which cuts thread and braid in a short manner even when the holder plate slants. The cutting mechanism has a rotary cutter and a fixed cutter, and the fixed cutter is fixed on the holder plate while inclined from a proximal portion to a distal portion. A wire member is connected to the mobile cutter to facilitate the rotation of the rotary cutter even when the holder plate slants.
摘要翻译：扣眼缝纫机包括固定机构，该保持机构在与针的振幅方向垂直的方向上往复运动的保持臂。保持机构包括工件保持板，构成平行四边形连杆。即使当保持器板倾斜在工件的折叠上并且牢固地保持工件时，保持机构也保持平行四边形形状。该扣眼缝纫机还包括切割机构，即使当夹持板倾斜时，也可以以短的方式切割线和编织物。切割机构具有旋转切割器和固定切割器，并且固定切割器在从近端部分到远端部分倾斜的同时固定在保持器板上。线材构件连接到移动式切割器，以便即使当保持器板倾斜时也能够旋转切割器的旋转。

5. 发明申请

US20120018735A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120018735A1
公开(公告)日：2012-01-26
申请号：US13186009
申请日：2011-07-19
申请人： Kazuaki ISHII
发明人： Kazuaki ISHII
IPC分类号： H01L29/12 , H01L29/772
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/404 , H01L29/41758 , H01L29/66431
摘要： A semiconductor device includes a source electrode and a drain electrode formed on an active region of the semiconductor layer, a gate electrode formed on the active region of the semiconductor layer, a first insulating film formed on the semiconductor layer and covering the gate electrode, the first insulating film having a step portion following a shape of the gate electrode, a first field plate formed on the insulating film and located between the gate electrode and the drain electrode and separated from the step portion, a second insulating film formed on the first insulating film to cover the step portion and the first field plate, and a shield electrode formed on the second insulating film, the shield electrode extending from a portion located above the first field plate and a portion located above the gate electrode.
摘要翻译：半导体器件包括形成在半导体层的有源区上的源电极和漏电极，形成在半导体层的有源区上的栅电极，形成在半导体层上并覆盖栅电极的第一绝缘膜，第一绝缘膜，具有与栅电极的形状相邻的阶梯部，形成在绝缘膜上并且位于栅电极与漏电极之间并与台阶部分离的第一绝缘膜，形成在第一绝缘层上的第二绝缘膜覆盖台阶部分和第一场板的屏蔽电极和形成在第二绝缘膜上的屏蔽电极，屏蔽电极从位于第一场板上方的部分延伸，以及位于栅电极上方的部分。

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