会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Subscription managing device and method
    • 订阅管理设备和方法
    • JP2006209459A
    • 2006-08-10
    • JP2005020563
    • 2005-01-28
    • Katsunori Shimizu克則 清水
    • SHIMIZU KATSUNORI
    • G06Q30/02G06Q30/06G06Q50/00
    • PROBLEM TO BE SOLVED: To increase the utilization efficiency of an audience seat by making the potential flexibility of a subscriber to utilization time obvious. SOLUTION: This subscription managing device and method is provided with processing for receiving an allowable range to a variation in a utilization application time as well as the utilization application time from a subscriber when receiving a subscription application, processing for storing the utilization subscription time and the allowable range in a storage device, processing for adjusting the previous subscriber or the previous subscriber's utilization application time within the allowable range so as to make both the subscriber and the previous subscriber have subscription when the subscriber's utilization application time overlaps the utilization application time of the previous subscription, and processing for storing the adjustment result in the storage device. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:通过使用户的潜在灵活性使得利用时间显而易见,从而提高观众座位的利用效率。 解决方案:该订阅管理装置和方法具有处理,用于在接收到订阅应用时从用户接收利用应用时间的变化的允许范围以及来自用户的利用应用时间,用于存储使用订阅的处理 时间和存储设备中的可允许范围,用于在允许范围内调整先前用户或先前用户的使用应用时间的处理,以便当用户的利用应用时间与利用应用重叠时,使订户和先前用户同时订阅 先前订阅的时间,以及将调整结果存储在存储装置中的处理。 版权所有(C)2006,JPO&NCIPI
    • 4. 发明授权
    • X-ray equipment
    • X光设备
    • US07206381B2
    • 2007-04-17
    • US10507204
    • 2004-01-09
    • Takashi ShimonoKatsunori Shimizu
    • Takashi ShimonoKatsunori Shimizu
    • H01J35/14
    • H01J35/14H01J35/18H01J35/30H01J2235/186
    • An x-ray tube (1) irradiates an electron beam from a cathode (18) to impact a target (36) and emit x-rays. When the x-ray tube (1) operates, the magnet portion (40) is rotated every fixed time period and positioned at a prescribed rotation position. Due to the rotation of the magnet portion (40), the magnetic field formed by the permanent magnets (42) changes and the irradiation position on the target (36) of the electron beam moves. As a result, the electron beam is irradiated at a new position on the target (36) and the same amount of x-ray as the initial performance is generated.
    • X射线管(1)照射来自阴极(18)的电子束以撞击靶(36)并发射X射线。 当X射线管(1)工作时,磁体部分(40)每固定时间周期旋转并且位于规定的旋转位置。 由于磁体部分(40)的旋转,由永磁体(42)形成的磁场发生变化,并且电子束的靶(36)上的照射位置移动。 结果,电子束被照射在目标(36)上的新位置,并且产生与初始性能相同量的x射线。
    • 6. 发明授权
    • Process for fabricating a wiring layer of aluminum or aluminum alloy on
semiconductor devices
    • 在半导体器件上制造铝或铝合金的布线层的工艺
    • US4547260A
    • 1985-10-15
    • US598741
    • 1984-04-10
    • Tadakazu TakadaKatsunori Shimizu
    • Tadakazu TakadaKatsunori Shimizu
    • H01L21/02H01L21/302H01L21/3065H01L21/3213C23F1/02B44C1/22C03C15/00C03C25/06
    • H01L21/02071H01L21/302
    • In the fabrication of an aluminum or aluminum alloy wiring layer on a semiconductor device by dry etching using a gas containing chlorine species, a plasma exposure step inserted into the dry etching process in order to avoid the problems due to using a chlorine radical etchant. One half thickness of the aluminum layer, which is selectively masked by a resist mask film, on a semiconductor substrate is etched by a reactive ion etching technique using an etchant gas composed of CCl.sub.4 +BCl.sub.3, and then exposed to a plasma of a gas composed of CF.sub.4 +O.sub.2 generated by RF power. After the plasma exposure, the remaining thickness of the aluminum film is etched off under the same conditions as in the preceeding reactive ion etching. As the result, the amount of side etching is reduced to one half that of the case without the plasma exposure step, and corrosion originating from aluminum chlorides, products of the reactive ion etching, is eliminated. And further, the residual polysilicon layer, which is usually formed when Al-Si film is etched by using a gas containing chlorine as a reactive species, is also reduced.
    • 在通过使用含氯气体的干蚀刻在半导体器件上制造铝或铝合金布线层时,将等离子体暴露步骤插入到干蚀刻工艺中,以避免由于使用氯根腐蚀剂而引起的问题。 通过使用由CCl 4 + BCl 3组成的蚀刻剂气体的反应离子蚀刻技术蚀刻在半导体衬底上被抗蚀剂掩模膜选择性地掩蔽的铝层的一半厚度,然后暴露于构成的气体的等离子体 由RF功率产生的CF4 + O2。 在等离子体暴露后,在与之前的反应离子蚀刻相同的条件下,蚀刻掉铝膜的剩余厚度。 结果,侧蚀刻的量减少到没有等离子体曝光步骤的情况的一半,并且消除了源自氯化铝的腐蚀反应离子蚀刻产物的腐蚀。 此外,通过使用含氯气体作为反应性物质蚀刻Al-Si膜时通常形成的残留多晶硅层也减少。