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2. 发明授权

US5948176A Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells 失效
标题翻译： CuInSe2薄膜太阳能电池的无镉结制造工艺
公开(公告)号：US5948176A
公开(公告)日：1999-09-07
申请号：US939844
申请日：1997-09-29
申请人： Kannan V. Ramanathan , Miguel A. Contreras , Raghu N. Bhattacharya , James Keane , Rommel Noufi
发明人： Kannan V. Ramanathan , Miguel A. Contreras , Raghu N. Bhattacharya , James Keane , Rommel Noufi
IPC分类号： H01L31/032 , H01L31/0336 , H01L31/00
CPC分类号： H01L31/0749 , H01L31/0323 , Y02E10/541 , Y02P70/521
摘要： The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.
摘要翻译：本发明提供了一种经济，简单，干燥和可控制的半导体层结形成工艺，其制造不含镉的高效光伏电池，其具有主要由铜铟二硒化物组成的第一层，其具有通过热产生的薄掺杂铜铟二硒化物n型区域与II族（b）元素如锌的扩散，以及卤化物如氯，以及由常规的氧化锌双层组成的第二层。根据本发明的光电器件包括主要由铜铟二硒化物形成的半导体材料的第一薄膜层。使用氯化锌溶液或固体氯化锌材料，可以用氯化锌掺杂二硒化铜铟。氯化锌向铜铟锡上部区域的热扩散产生薄的n型铜铟二硒化物表面。然后将包含氧化锌的半导体材料的第二薄膜层分两层施加。第一层包括一层高电阻率的氧化锌。第二较厚的氧化锌层被掺杂以显示低电阻率。

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