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1. 发明授权

US07989582B2 Process for producing poly-tetrahydrofuran 有权
标题翻译：聚四氢呋喃的制备方法
公开(公告)号：US07989582B2
公开(公告)日：2011-08-02
申请号：US12289171
申请日：2008-10-22
申请人： Eun-Ku Lee , Yong-Ho Baek , Joon-Seok Oh , No-Hyun Kim , Jae-Young Huh
发明人： Eun-Ku Lee , Yong-Ho Baek , Joon-Seok Oh , No-Hyun Kim , Jae-Young Huh
IPC分类号： C08G65/20 , C08G65/06 , C08G65/02 , C08G65/04 , C08G59/68
CPC分类号： C08G65/20 , C08G65/2666 , C08G65/2675 , C08G65/2681
摘要： The present invention relates to a process for producing tetrahydrofuran polymer or tetrahydrofuran copolymer by using heteropolyacid catalyst, and more particularly, to a process for producing tetrahydrofuran polymer by using hydronium ion water having a pH of 5.5 or less as a reaction initiator in the initiation step.
摘要翻译：本发明涉及通过使用杂多酸催化剂生产四氢呋喃聚合物或四氢呋喃共聚物的方法，更具体地说，涉及在起始步骤中使用pH5.5以下的水合氢离子水作为反应引发剂来生产四氢呋喃聚合物的方法。

2. 发明申请

US20100052167A1 METAL LINE HAVING A MOxSiy/Mo DIFFUSION BARRIER OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 失效
标题翻译：具有MOxSiy / Mo半导体器件的扩散阻挡层的金属线及其形成方法
公开(公告)号：US20100052167A1
公开(公告)日：2010-03-04
申请号：US12472721
申请日：2009-05-27
申请人： Joon Seok OH , Seung Jin YEOM , Baek Mann KIM , Dong Ha JUNG , Nam Yeal LEE , Jae Hong Kim
发明人： Joon Seok OH , Seung Jin YEOM , Baek Mann KIM , Dong Ha JUNG , Nam Yeal LEE , Jae Hong Kim
IPC分类号： H01L23/48 , H01L21/768 , B32B3/10
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.
摘要翻译：提出了具有半导体器件的MoxSiy / Mo扩散阻挡层的金属线及其制造方法。金属线包括绝缘层，扩散阻挡层和金属层。绝缘层形成在半导体衬底上并具有金属线形成区域。扩散阻挡层形成在绝缘层的金属线形成区域的表面上，并且具有由MoxSiy层和Mo层构成的堆叠结构。金属层形成在填充绝缘层的金属线形成区域的扩散阻挡层上。

3. 发明授权

US09360862B2 PLC network extension system 有权
标题翻译： PLC网络扩展系统
公开(公告)号：US09360862B2
公开(公告)日：2016-06-07
申请号：US13550370
申请日：2012-07-16
申请人： Geon Yoon , Joon Seok Oh
发明人： Geon Yoon , Joon Seok Oh
IPC分类号： G05B19/418 , G05B19/05
CPC分类号： G05B19/4185 , G05B19/052 , G05B2219/1109 , Y02P90/04 , Y02P90/18
摘要： Provided is a PLC network extension system, the system including a basic base generating a control data for controlling a plurality of extension bases, generating a network frame using the control data, and transmitting the network frame to one extension base in the plurality of extension bases via a network cable, and the plurality of extension bases extracting a control data from the received network frame to control a pre-installed module based on the control data.
摘要翻译：提供了一种PLC网络扩展系统，该系统包括生成用于控制多个扩展基地的控制数据的基本基站，使用该控制数据生成网络帧，以及将网络帧发送到多个扩展基础中的一个扩展基础并且所述多个扩展基站从所接收的网络帧中提取控制数据，以基于所述控制数据来控制预先安装的模块。

4. 发明申请

US20130044632A1 PLC NETWORK EXTENSION SYSTEM 有权
标题翻译： PLC网络扩展系统
公开(公告)号：US20130044632A1
公开(公告)日：2013-02-21
申请号：US13550370
申请日：2012-07-16
申请人： Geon YOON , Joon Seok OH
发明人： Geon YOON , Joon Seok OH
IPC分类号： H04L12/56
CPC分类号： G05B19/4185 , G05B19/052 , G05B2219/1109 , Y02P90/04 , Y02P90/18
摘要： Provided is a PLC network extension system, the system including a basic base generating a control data for controlling a plurality of extension bases, generating a network frame using the control data, and transmitting the network frame to one extension base in the plurality of extension bases via a network cable, and the plurality of extension bases extracting a control data from the received network frame to control a pre-installed module based on the control data.
摘要翻译：提供了一种PLC网络扩展系统，该系统包括生成用于控制多个扩展基地的控制数据的基本基站，使用该控制数据生成网络帧，以及将网络帧发送到多个扩展基础中的一个扩展基础并且所述多个扩展基站从所接收的网络帧中提取控制数据，以基于所述控制数据来控制预先安装的模块。

5. 发明授权

US08298744B2 Coating material for photoresist pattern and method of forming fine pattern using the same 有权
标题翻译：用于光致抗蚀剂图案的涂料和使用其形成精细图案的方法
公开(公告)号：US08298744B2
公开(公告)日：2012-10-30
申请号：US12110864
申请日：2008-04-28
申请人： Joon-Seok Oh , Ju-Young Kim
发明人： Joon-Seok Oh , Ju-Young Kim
IPC分类号： G03C1/00 , G03F7/00
CPC分类号： G03F7/40
摘要： A coating material for a photoresist pattern includes a water-soluble polymer and an additive mixed with the water-soluble polymer. The additive may be at least one selected from the group represented by Formulas 1 and 2: wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R8 respectively represent one selected from an electron donating group consisting of an alkyl group and —H, and wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R7 respectively represent one selected from an electron donating group consisting of an alkyl group and —H.
摘要翻译：用于光致抗蚀剂图案的涂料包括水溶性聚合物和与水溶性聚合物混合的添加剂。添加剂可以是选自由式1和2表示的基团中的至少一种：其中X和Y分别表示选自由N，O和S组成的杂原子的一个，并且R 1至R 8分别表示选自供电子由烷基和-H组成的基团，其中X和Y分别表示选自由N，O和S组成的杂原子的一个，R 1至R 7分别表示选自由烷基和 -H。

6. 发明申请

US20120077120A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT 审中-公开
标题翻译：包含多个组件的电影
公开(公告)号：US20120077120A1
公开(公告)日：2012-03-29
申请号：US13232318
申请日：2011-09-14
申请人： Gregory P. PROKOPOWICZ , Gerhard Pohlers , Cong Liu , Chunyi Wu , Cheng-Bae Xu , Joon Seok Oh
发明人： Gregory P. PROKOPOWICZ , Gerhard Pohlers , Cong Liu , Chunyi Wu , Cheng-Bae Xu , Joon Seok Oh
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0382
摘要： New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer
摘要翻译：提供新的光致抗蚀剂组合物，其包含包含两个或多个酰胺基团的组分。本发明优选的光致抗蚀剂可以包含具有光酸不稳定基团的树脂; 光致酸发生剂化合物; 以及可以起到减少光致抗蚀剂涂层的未曝光区域中不期望的光致酸扩散的作用的多酰胺组分

7. 发明申请

US20100166982A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME 失效
标题翻译：具有扩散障碍物的半导体器件的金属线及其形成方法
公开(公告)号：US20100166982A1
公开(公告)日：2010-07-01
申请号：US12471801
申请日：2009-05-26
申请人： Joon Seok OH , Seung Jin YEOM , Jae Hong KIM
发明人： Joon Seok OH , Seung Jin YEOM , Jae Hong KIM
IPC分类号： B32B15/04 , H05H1/24
CPC分类号： H01L21/76846 , H01L21/76856 , H01L21/76873 , Y10T428/26 , Y10T428/31678
摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz lo layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要翻译：半导体器件的金属线包括形成在半导体衬底上的绝缘层。绝缘层具有金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层。扩散阻挡层包括包括MoxSiyNz lo层和Mo层的堆叠结构。在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

8. 发明申请

US20090283908A1 METAL LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 失效
标题翻译：金属线半导体器件及其形成方法
公开(公告)号：US20090283908A1
公开(公告)日：2009-11-19
申请号：US12329718
申请日：2008-12-08
申请人： Jeong Tae KIM , Seung Jin YEOM , Baek Mann KIM , Dong Ha JUNG , Joon Seok OH , Nam Yeal LEE , Jae Hong KIM
发明人： Jeong Tae KIM , Seung Jin YEOM , Baek Mann KIM , Dong Ha JUNG , Joon Seok OH , Nam Yeal LEE , Jae Hong KIM
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L2924/0002 , H01L2924/00
摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要翻译：半导体器件的金属线包括形成在半导体衬底上的绝缘层，并且在绝缘层中形成金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层，扩散层具有Ru层，RuxOy层，IrxOy层和Ti层的多层结构。在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

9. 发明授权

US07501224B2 Compositions for use in forming a pattern and methods of forming a pattern 有权
标题翻译：用于形成图案的组合物和形成图案的方法
公开(公告)号：US07501224B2
公开(公告)日：2009-03-10
申请号：US12025823
申请日：2008-02-05
申请人： Ju-Young Kim , Joon-Seok Oh , Jae-Hyun Kim
发明人： Ju-Young Kim , Joon-Seok Oh , Jae-Hyun Kim
IPC分类号： G03F7/004 , G03F7/30 , C08F8/00
CPC分类号： G03F7/40 , Y10S430/11
摘要： In a composition for forming an interfacial layer on a photoresist pattern, and a method of forming a pattern using the composition, the composition includes a water-soluble polymer, a cross-linking agent and a water-miscible solvent. The water-soluble polymer includes a repeating unit represented by Formula 1, wherein R1, R2, R3, R4 and R5 independently denote a hydrogen atom, a hydroxyl group, an alkyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt, R6 denotes a hydrogen atom or an alkyl group, m denotes an integer of 1 to 4 both inclusive, and x denotes an integer of 1 to 1,000 both inclusive. Also, at least one of R1, R2, R3, R4 and R5 is a hydroxyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt.
摘要翻译：在用于在光致抗蚀剂图案上形成界面层的组合物和使用该组合物形成图案的方法中，该组合物包括水溶性聚合物，交联剂和水混溶性溶剂。该水溶性聚合物包括式1表示的重复单元，其中R 1，R 2，R 3，R 4和R 5独立地表示氢原子，羟基，烷基，羟基烷基，氨基烷基，巯基烷基，氨基，巯基或铵盐，R6表示氢原子或烷基，m表示1〜4的整数，x表示1〜1000的整数。此外，R 1，R 2，R 3，R 4和R 5中的至少一个是羟基，羟烷基，氨基烷基，巯基烷基，氨基，巯基或铵盐。

10. 发明授权

US11106137B2 Compositions comprising base-reactive component and processes for photolithography 有权
公开(公告)号：US11106137B2
公开(公告)日：2021-08-31
申请号：US13297258
申请日：2011-11-15
申请人： Deyan Wang , Cong Liu , Mingqi Li , Joon Seok Oh , Cheng-Bai Xu , Doris H. Kang , Clark H. Cummins , Matthias S. Ober
发明人： Deyan Wang , Cong Liu , Mingqi Li , Joon Seok Oh , Cheng-Bai Xu , Doris H. Kang , Clark H. Cummins , Matthias S. Ober
IPC分类号： G03F7/20 , G03F7/004 , G03F7/039
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

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