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1. 发明授权

US10651037B2 Method for fabricating a doped zone in a semiconductor body 有权
公开(公告)号：US10651037B2
公开(公告)日：2020-05-12
申请号：US11232735
申请日：2005-09-22
申请人： Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Holger Schulze
发明人： Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Holger Schulze
IPC分类号： H01L21/265 , H01L29/66 , H01L21/304 , H01L29/10 , H01L21/324 , H01L21/263 , H01L29/08
摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.

2. 发明授权

US09553178B2 Semiconductor component with an emitter control electrode 有权
标题翻译：具有发射极控制电极的半导体元件
公开(公告)号：US09553178B2
公开(公告)日：2017-01-24
申请号：US12977755
申请日：2010-12-23
申请人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze
IPC分类号： H01L29/66 , H01L29/739 , H01L29/06 , H01L29/423
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/4236
摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.
摘要翻译：半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。

3. 发明授权

US09153674B2 Insulated gate bipolar transistor 有权
标题翻译：绝缘栅双极晶体管
公开(公告)号：US09153674B2
公开(公告)日：2015-10-06
申请号：US12421322
申请日：2009-04-09
申请人： Hans-Joachim Schulze
发明人： Hans-Joachim Schulze
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7395 , H01L29/0615 , H01L29/0696 , H01L29/083 , H01L29/0834 , H01L29/1095 , H01L29/7393
摘要： A semiconductor device is disclosed. One embodiment provides a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type. At least one first region of a second conductivity type is formed at a second side of the semiconductor zone. The at least one first region is opposed to the cell area region. At least one second region of the second conductivity type is formed at the second side of the semiconductor zone. The at least one second region is opposed to the cell area region and has a lateral dimension smaller than the at least first region.
摘要翻译：公开了一种半导体器件。一个实施例提供在第一导电类型的半导体区域的第一侧处的单元区域和结端接区域。至少一个第二导电类型的第一区域形成在半导体区域的第二侧。所述至少一个第一区域与所述单元区域区域相对。第二导电类型的至少一个第二区域形成在半导体区域的第二侧。所述至少一个第二区域与所述单元区域区域相对并且具有小于所述至少第一区域的横向尺寸。

4. 发明授权

US08993372B2 Method for producing a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US08993372B2
公开(公告)日：2015-03-31
申请号：US13407731
申请日：2012-02-28
申请人： Manfred Schneegans , Carsten Ahrens , Adolf Koller , Gerald Lackner , Anton Mauder , Hans-Joachim Schulze
发明人： Manfred Schneegans , Carsten Ahrens , Adolf Koller , Gerald Lackner , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L21/00 , H01L21/36 , H01L21/02 , H01L21/762 , H01L29/861
CPC分类号： H01L21/02658 , H01L21/76202 , H01L21/76224 , H01L29/8611 , Y10T428/218
摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.
摘要翻译：公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

5. 发明授权

US08946850B2 Integrated circuit including a power transistor and an auxiliary transistor 有权
标题翻译：集成电路包括功率晶体管和辅助晶体管
公开(公告)号：US08946850B2
公开(公告)日：2015-02-03
申请号：US13312180
申请日：2011-12-06
申请人： Hans-Joachim Schulze , Anton Mauder , Frank Pfirsch
发明人： Hans-Joachim Schulze , Anton Mauder , Frank Pfirsch
IPC分类号： H01L31/058
CPC分类号： H01L23/62 , H01L27/0251 , H01L27/0629 , H01L27/088 , H01L29/0696 , H01L29/41766 , H01L29/42364 , H01L29/7803 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment of an integrated circuit, the integrated circuit includes a power transistor with a power control terminal, a first power load terminal and a second power load terminal. The integrated circuit further includes an auxiliary transistor with an auxiliary control terminal, a first auxiliary load terminal and a second auxiliary load terminal. The first auxiliary load terminal is electrically coupled to the power control terminal. The integrated circuit further includes a capacitor with a first capacitor electrode, a second capacitor electrode and a capacitor dielectric layer. The capacitor dielectric layer includes at least one of a ferroelectric material and a paraelectric material. The first capacitor electrode is electrically coupled to the auxiliary control terminal.
摘要翻译：在集成电路的一个实施例中，集成电路包括具有功率控制端子的功率晶体管，第一功率负载端子和第二功率负载端子。集成电路还包括具有辅助控制端子的辅助晶体管，第一辅助负载端子和第二辅助负载端子。第一辅助负载端子电耦合到功率控制端子。集成电路还包括具有第一电容器电极，第二电容器电极和电容器电介质层的电容器。电容介质层包括铁电材料和顺电材料中的至少一种。第一电容器电极电耦合到辅助控制端子。

6. 发明授权

US08772126B2 Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device 有权
标题翻译：制造半导体器件的方法，包括从背面研磨和半导体器件
公开(公告)号：US08772126B2
公开(公告)日：2014-07-08
申请号：US13571769
申请日：2012-08-10
申请人： Hans-Joachim Schulze , Anton Mauder
发明人： Hans-Joachim Schulze , Anton Mauder
IPC分类号： H01L21/8238 , H01L21/8234 , H01L21/762 , H01L21/683 , H01L41/338
CPC分类号： H01L29/06 , B24B7/228 , B24B37/013 , B24B37/042 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3247 , H01L21/764 , H01L21/78 , H01L22/26 , H01L29/66333
摘要： A cavity is etched from a front surface into a semiconductor substrate. After providing an etch stop structure at the bottom of the cavity, the cavity is closed. From a back surface opposite to the front surface the semiconductor substrate is grinded at least up to an edge of the etch stop structure oriented to the back surface. Providing the etch stop structure at the bottom of an etched cavity allows for precisely adjusting a thickness of a semiconductor body of a semiconductor device.
摘要翻译：将腔从前表面刻蚀成半导体衬底。在腔的底部提供蚀刻停止结构之后，空腔被关闭。从与前表面相对的后表面，半导体衬底至少被研磨到定向到后表面的蚀刻停止结构的边缘。在蚀刻腔的底部提供蚀刻停止结构允许精确地调节半导体器件的半导体本体的厚度。

7. 发明授权

US08680645B2 Semiconductor device and a method for forming a semiconductor device 有权
标题翻译：半导体装置及半导体装置的形成方法
公开(公告)号：US08680645B2
公开(公告)日：2014-03-25
申请号：US13205759
申请日：2011-08-09
申请人： Franz Hirler , Anton Mauder , Hans-Joachim Schulze
发明人： Franz Hirler , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L29/00 , H01L27/08 , H01L21/8238 , H01L21/04
CPC分类号： H01L29/0649 , H01L21/761 , H01L29/045 , H01L29/0653 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/66136 , H01L29/66734 , H01L29/7397 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L29/8613 , H01L29/868
摘要： A semiconductor device having a semiconductor die is provided. The semiconductor die includes a main horizontal surface, an outer edge, an active area, and a peripheral area. The peripheral area includes a dielectric structure surrounding the active area and extending from the main horizontal surface into the semiconductor die. The dielectric structure includes, in a horizontal cross-section, at least one substantially L-shaped portion that is inclined against the outer edge. Further, a method for forming a semiconductor device is provided.
摘要翻译：提供具有半导体管芯的半导体器件。半导体管芯包括主水平表面，外边缘，有效区域和周边区域。周边区域包括围绕有源区域并从主水平表面延伸到半导体管芯中的电介质结构。电介质结构在水平截面中包括至少一个相对于外边缘倾斜的大致L形的部分。此外，提供了一种用于形成半导体器件的方法。

8. 发明授权

US08659023B2 Monocrystalline substrate including lattice matching atoms in a near surface region and a monocrystalline layer disposed on the substrate 有权
标题翻译：单晶衬底包括近表面区域中的晶格匹配原子和设置在衬底上的单晶层
公开(公告)号：US08659023B2
公开(公告)日：2014-02-25
申请号：US13610206
申请日：2012-09-11
申请人： Franz Hirler , Hans-Joachim Schulze
发明人： Franz Hirler , Hans-Joachim Schulze
IPC分类号： H01L31/036
CPC分类号： H01L21/02667 , C30B11/14 , C30B19/12 , C30B29/06 , C30B29/52 , C30B31/22 , H01L21/02532 , H01L21/02686
摘要： A monocrystalline layer having a first lattice constant on a monocrystalline substrate having a second lattice constant at least in a near-surface region, wherein the second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface region is momentarily melted. A layer is epitaxially deposited on the near-surface region that has solidified in monocrystalline fashion.
摘要翻译：在单晶衬底上具有至少在近表面区域中具有第二晶格常数的第一晶格常数的单晶层，其中第二晶格常数不同于第一晶格常数。将晶格匹配原子注入近表面区域。近表面区域瞬间熔化。外延沉积在已经以单晶固化的近表面区域上的层。

9. 发明授权

US08653556B2 Vertical semiconductor device 有权
标题翻译：垂直半导体器件
公开(公告)号：US08653556B2
公开(公告)日：2014-02-18
申请号：US12437375
申请日：2009-05-07
申请人： Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/739
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/7395 , H01L29/861
摘要： A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor body including, in a direction from the first contact to the second contact, a first region of a first conductivity type, a second region of a second conductivity type; and a third region of the first conductivity type. The third region is electrically connected to the second contact. A semiconductor zone of the second conductivity type and increased doping density is arranged in the second region. The semiconductor zone separates a first part of the second region from a second part of the second region. The semiconductor zone has a maximum doping density exceeding about 1016 cm−3 and a thickness along the direction from the first contact to the second contact of less than about 3 μm.
摘要翻译：垂直半导体器件包括半导体本体，以及在半导体本体的相对侧上的第一和第二触点。多个区域形成在半导体本体中，包括从第一接触到第二接触的方向，具有第一导电类型的第一区域和第二导电类型的第二区域; 和第一导电类型的第三区域。第三区域电连接到第二触点。第二导电类型的半导体区域和掺杂浓度的增加被布置在第二区域中。半导体区域将第二区域的第一部分与第二区域的第二部分分开。半导体区具有超过约1016cm-3的最大掺杂密度和沿着从第一接触到第二接触的方向的厚度小于约3μm。

10. 发明申请

US20140042593A1 SEMICONDUCTOR DEVICE INCLUDING A TRENCH IN A SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体衬底中包括铁素体的半导体器件和制造半导体器件的方法
公开(公告)号：US20140042593A1
公开(公告)日：2014-02-13
申请号：US13571455
申请日：2012-08-10
申请人： Anton Mauder , Reinhard Ploss , Hans-Joachim Schulze
发明人： Anton Mauder , Reinhard Ploss , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L21/225 , H01L29/36
CPC分类号： H01L29/4236 , H01L21/2225 , H01L21/2251 , H01L21/2254 , H01L21/2255 , H01L21/2257 , H01L21/28079 , H01L21/30604 , H01L21/324 , H01L21/3247 , H01L21/743 , H01L23/36 , H01L24/05 , H01L29/0653 , H01L29/0657 , H01L29/0878 , H01L29/1079 , H01L29/167 , H01L29/41741 , H01L29/41766 , H01L29/456 , H01L29/4958 , H01L29/66333 , H01L29/66348 , H01L29/66666 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L2224/05009 , H01L2224/05078 , H01L2224/0557 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side.
摘要翻译：半导体器件包括半导体衬底。第一沟槽从第一侧延伸进入或穿过半导体衬底。半导体层在第一侧邻接半导体衬底。半导体层在第一侧覆盖第一沟槽。半导体器件还包括在与第一侧相对的半导体衬底的第二侧的接触。

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