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1. 发明专利

JP5657109B2 半絶縁炭化珪素単結晶及びその成長方法有权
标题翻译：半绝缘碳化硅单晶和生长方法
公开(公告)号：JP5657109B2
公开(公告)日：2015-01-21
申请号：JP2013516994
申请日：2011-12-06
申请人：中國科學院物理研究所Institute Of Physics Chinese Academy Of Sciences , 中國科學院物理研究所Institute Of Physics Chinese Academy Of Sciences
发明人：小龍陳 , 小龍陳 , 春俊劉 , 春俊劉 , 同華彭 , 同華彭 , 龍遠李 , 龍遠李 , 波王 , 波王 , 剛王 , 剛王 , 文軍王 , 文軍王 , 宇劉 , 宇劉
IPC分类号： C30B29/36
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/002 , C30B23/005 , C30B23/06 , C30B29/36 , H01L21/02529 , H01L29/435

3. 发明专利

JP2010500768A Epitaxial material and production method for GaN Besudo light-emitting diode of the low polarization effect 有权
公开(公告)号：JP2010500768A
公开(公告)日：2010-01-07
申请号：JP2009524067
申请日：2007-08-15
申请人：インスティチュートオブフィジックス, チャイニーズアカデミーオブサイエンシーズInstitute Of Physics Chinese Academy Of Sciences
发明人：リーウェイグゥオ , フォンチェン , ハイキァンチャー , チュンミンツォウ , ウェンシンワン
IPC分类号： H01L33/32 , H01L21/205 , H01L33/00 , H01L33/04 , H01L33/06
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/04 , H01L33/06 , Y10S438/956
摘要：【解決手段】本発明は低分極化効果のＧａＮ発光ダイオード用エピタキシャル材料の製造方法に関し、以下のステップを含む。サファイア又はＳｉＣ基板（１）上に、順次にＧａＮバッファ層（２）とｎ型ＧａＮ層（３）からなるｎ型ＩｎＧａＡｌＮ層、ＩｎＧａＡｌＮ多量子ウェル構造分極化制御層（４）とＩｎＧａＡｌＮ多量子ウェル構造発光層（５）からなる低分極化効果アクティブ層及びｐ型ＩｎＧａＡｌＮ層（６）を成長する。当該方法は、ＩｎＧａＡｌＮ多量子ウェル構造分極化制御層を増加し、量子ウェルアクティブ領域の分極化効果を減少した。
【選択図】図１

4. 发明申请

WO2019183030A1 OXIDE-BASED FLEXIBLE HIGH VOLTAGE THIN FILM TRANSISTOR 审中-公开
公开(公告)号：WO2019183030A1
公开(公告)日：2019-09-26
申请号：PCT/US2019/022872
申请日：2019-03-19
申请人： RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY , INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
发明人： LU, Yicheng , HONG, Wen-Chiang , DU, Xiaolong , ZHANG, Yonghui , MEI, Zengxia
IPC分类号： H01L29/417 , H01L29/739 , H01L29/786
摘要： Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 μΑ, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

5. 发明申请

WO1997043794A1 A METHOD OF PREPARING POSITIVE MATERIAL FOR LITHIUM SECONDARY CELL BY MICROWAVE ENERGY 审中-公开
标题翻译：通过微波能量制备锂二次电池正极材料的方法
公开(公告)号：WO1997043794A1
公开(公告)日：1997-11-20
申请号：PCT/CN1997000039
申请日：1997-05-04
申请人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES , YAN, Hongwei , HUANG, Xuejie , CHEN, Liquan , XUE, Rongjian , HUANG, Hong
发明人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
IPC分类号： H01M04/04
CPC分类号： C01G45/1228 , C01G45/1221 , C01G45/1242 , C01G45/1257 , C01G45/1292 , C01G51/42 , C01G53/42 , C01P2002/72 , C01P2004/03 , C01P2004/61 , C01P2006/40 , H01M4/505 , H01M4/525 , H01M10/052 , Y02P20/124
摘要： The invention relates to a method of preparing positive material for lithium secondary cell by microwave energy. Oxide, hydroxide or salt raw materials of Co, Ni, Mn, Cr, Ti, V, Sc, Fe and Li are weighed in the ratio Li1+xM1-yM' omega O4-z (wherein x = -1 SIMILAR 5, y = -1 SIMILAR 1, omega = 0 SIMILAR 6, z = -8 SIMILAR 3), the raw materials are homogeneously mixed to produce a precursor body, the precursor body is placed in a thermos container capable of being transmitted by microwave, then placed in a microwave oven having microwave frequency of 0.3-300 gigahertz (GHz) and microwave wavelength of 1 mm-1m, and then heat-synthesized for 1 minute-5 hours at 500 DEG C-1000 DEG C, thus there is produced the positive material for lithium secondary cell with the microwave oven cooling. The method saves energy and decreases the loss of lithium in the heat-synthesizing process, so ensures the stability in material component.
摘要翻译：本发明涉及一种利用微波能量制备锂二次电池正极材料的方法。以Li1 + xM1-yM'omegaO4-z的比例称量Co，Ni，Mn，Cr，Ti，V，Sc，Fe和Li的氧化物，氢氧化物或盐原料（其中x = -1〜3， = -1类似1，ω= 0类似6，z = -8类似3），将原料均匀混合以产生前体体，将前体体置于能够通过微波传播的保温容器中，然后放置在微波频率为0.3-300千赫兹（GHz）和微波波长为1mm-1m的微波炉中，然后在500℃-1000℃下热合成1分钟-5小时，从而产生阳性材料为锂二次电池与微波炉冷却。该方法节约了能源，降低了热合成过程中锂的损耗，保证了材料成分的稳定性。

6. 发明申请

WO2015103829A1 MULTIFUNCTIONAL ULTRAFAST ELECTRON GUN OF TRANSMISSION ELECTRON MICROSCOPE 审中-公开
标题翻译：传输电子显微镜的多功能超声电子枪
公开(公告)号：WO2015103829A1
公开(公告)日：2015-07-16
申请号：PCT/CN2014/076846
申请日：2014-05-06
申请人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
发明人： LI, Jianqi , TIAN, Huanfang , CAO, Gaolong , MA, Chao , YANG, Huaixin
IPC分类号： H01J37/06
CPC分类号： H01J37/06 , H01J37/073 , H01J37/26 , H01J37/28 , H01J37/3178 , H01J2237/2802
摘要： A multifunctional ultrafast electron gun of a transmission electron microscopy comprises: a laser source(lOO), an electron gun body(200) and a laser introducing module(300). The electron gun body(200) comprises: an electron gun sleeve comprising a first section sleeve(211) and a second sleeve(212); and, a cafhode(220),an acceleration electrode(230) and an anode(240) arranged in up-down order, wherein the cafhode(220) and the acceleration electrode(230) are located within the first section sleeve(211) and the anode(240) is located within the second section sleeve(212). The laser introducing module(300) includes an introducing module sleeve(310) sealedly connected between the first section sleeve(211) and the second section sleeve(212) and provided with a laser incoming window(320) in a side thereof; and a laser reflective mirror(330) located in the introducing module sleeve(310), which is configured to face right the laser incoming window(320) and configured adjacent to a central axis of the introducing module sleeve(310), and a reflective face of which configured to make an angle of 45°with the central axis of the introducing module sleeve(310). It can achieve good coherence performance of the electrons obtained in the case of the photoelectron emission.
摘要翻译：透射电子显微镜的多功能超快电子枪包括：激光源（100），电子枪体（200）和激光引入模块（300）。电子枪主体（200）包括：电子枪套筒，包括第一部分套筒（211）和第二套筒（212）; 以及上下方向排列的咖啡面（220），加速电极（230）和阳极（240），其中咖啡面（220）和加速电极（230）位于第一部分套筒（211）内，并且阳极（240）位于第二部分套筒（212）内。激光引入模块（300）包括密封地连接在第一部分套筒（211）和第二部分套筒（212）之间并在其一侧设置有激光进入窗口（320）的引入模块套筒（310）以及位于所述引入模块套筒（310）中的激光反射镜（330），所述激光反射镜被配置为面对所述激光进入窗口（320）并且邻近所述引入模块套筒（310）的中心轴线配置，并且被配置为反射其构造成与引入模块套筒（310）的中心轴成45°的角度。可以实现在光电子发射的情况下获得的电子的良好的相干性能。

7. 发明申请

WO2022193323A1 LAYER-BY-LAYER VAN DER WAALS EPITAXIAL GROWTH OF WAFER-SCALE MOS2 CONTINUOUS FILMS 审中-公开
公开(公告)号：WO2022193323A1
公开(公告)日：2022-09-22
申请号：PCT/CN2021/081921
申请日：2021-03-19
申请人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
发明人： WANG, Qinqin , ZHANG, Guangyu , YANG, Rong , SHI, Dongxia , SUN, Gang
IPC分类号： C23C16/448 , C23C16/455 , C23C16/30 , C23C16/52 , C23C16/46
摘要： A MoS 2 continuous film on substrate, characterized in that, the domain size of the MoS 2 continuous film is larger than 100 μm (layer number=1), 10μm (layer number≥2), respectively. High-quality MoS 2 films of the present invention with different layer numbers (layer number≥2) on a substrate. The films can be continuous over large area (e.g., 4 in. wafer-scale). The films can be made based on chemical vapor deposition method. The films can be used in electrical and electronic devices (e.g., high performance thin-film transistors, logic devices, sensors).

8. 发明公开

US20240120923A1 SPIN LOGIC DEVICE BASED ON MAGNETIC TUNNEL JUNCTION AND ELECTRONIC APPARATUS COMPRISING THE SAME 审中-公开
公开(公告)号：US20240120923A1
公开(公告)日：2024-04-11
申请号：US18482141
申请日：2023-10-06
申请人： Institute of Physics, Chinese Academy of Sciences
发明人： Xiufeng HAN , Caihua WAN , Mingkun ZHAO , Ran ZHANG
IPC分类号： H03K19/18 , G06F7/46 , G11C11/16 , H01F10/32 , H03K19/21
CPC分类号： H03K19/18 , G06F7/461 , G11C11/161 , G11C11/1675 , H01F10/3254 , H03K19/21
摘要： Provided are a spin logic device based on a magnetic tunnel junction and an electronic apparatus comprising the same. According to an embodiment, the spin logic device may comprise: a current wiring; a magnetic tunnel junction, which comprises a free magnetic layer, a fixed magnetic layer, and a potential barrier layer located therebetween, which are stacked on the current wiring; and a current source for providing an input current to the current wiring, wherein the input current comprises a first, a second, and a third in-plane currents, directions of which are different from a direction of a magnetization axis of the free magnetic layer or there is a vertical component in that direction, and the first and the second in-plane currents are logical input currents while the third in-plane current is used to control the implementation mode of the spin logic device.

9. 发明授权

US11937513B2 Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory 有权
公开(公告)号：US11937513B2
公开(公告)日：2024-03-19
申请号：US17079422
申请日：2020-10-24
申请人： Institute of Physics, Chinese Academy of Sciences
发明人： Xiufeng Han , Ping Tang , Chenyang Guo , Caihua Wan
IPC分类号： H10N50/80 , H01F10/32 , H10N50/10 , H10N50/85
CPC分类号： H10N50/80 , H01F10/32 , H10N50/10 , H10N50/85
摘要： The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

10. 发明授权

US11808828B2 Magnonic magneto-resistance device including two-dimensional spacer and electronic equipment comprising the same 有权
公开(公告)号：US11808828B2
公开(公告)日：2023-11-07
申请号：US17201016
申请日：2021-03-15
申请人： Institute of Physics, Chinese Academy of Sciences
发明人： Xiufeng Han , Yaowen Xing
IPC分类号： G01R33/09 , H01F10/32 , H01F10/193 , H10N50/10 , H10N50/85 , G01R33/00
CPC分类号： G01R33/093 , G01R33/095 , H01F10/193 , H01F10/325 , H01F10/3254 , H10N50/10 , H10N50/85 , G01R33/0052
摘要： The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

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