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    • 7. 发明申请
    • Spin Hall Effect Memory
    • 旋转霍尔效应记忆
    • US20140001524A1
    • 2014-01-02
    • US13537541
    • 2012-06-29
    • Sasikanth ManipatruniDmitri NikonovIan Young
    • Sasikanth ManipatruniDmitri NikonovIan Young
    • H01L27/22
    • H01L43/08G11C11/161G11C11/1655G11C11/1659G11C11/1673G11C11/1675G11C11/18H01L27/222H01L27/228H01L28/65
    • An embodiment of the invention includes a memory cell having a magnet layer coupled to a metal layer and read line. The metal layer is also coupled to write and sense lines. During a write operation charge current is supplied to the metal layer via the write line and induces spin current and a magnetic state within the magnet layer based on the spin Hall effect. During a read operation read current is supplied, via the read line, to the magnet layer and then the metal layer and induces another spin current, within the metal layer, that generates an electric field and voltage, based on inverse spin Hall effect, at a sense node coupled to the sense line. The voltage polarity is based on the aforementioned magnetic state. The memory operates with a low supply voltage to drive charge, read, and spin currents. Other embodiments are described herein.
    • 本发明的实施例包括具有耦合到金属层和读取线的磁体层的存储单元。 金属层也耦合到写入和感测线。 在写入操作期间,通过写入线将充电电流提供给金属层,并且基于旋转霍尔效应引起磁体层内的自旋电流和磁状态。 在读取操作期间,读取电流通过读取线被提供给磁体层,然后被提供给金属层,并且在金属层内产生基于反旋转霍尔效应产生电场和电压的另一个自旋电流 耦合到感测线的感测节点。 电压极性基于上述磁状态。 存储器以低电源电压运行,以驱动电荷,读数和自旋电流。 本文描述了其它实施例。