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    • 1. 发明授权
    • Semiconductor device having a capacitor with an electrode grown through
pinholes
    • 具有具有通过针孔生长的电极的电容器的半导体器件
    • US5227651A
    • 1993-07-13
    • US843629
    • 1992-02-28
    • Sung-tae KimHyeung-gyu LeeJae-hong Ko
    • Sung-tae KimHyeung-gyu LeeJae-hong Ko
    • H01L27/04H01L21/02H01L21/822H01L21/8242H01L27/10H01L27/108H01L29/94
    • H01L28/82H01L27/10808H01L28/84H01L29/94H01L28/90
    • Disclosed is a semiconductor device having a capacitor of large capacitance. The capacitor includes a first electrode portion which has a conductive structure formed on a semiconductor substrate, an insulating layer with pinholes in the conductive structure, and a conductive silicon layer grown through the pinholes, a second electrode portion on the first electrode portion, and a dielectric film formed between the first and second electrode portions. A method for manufacturing the device includes the steps of forming the first electrode portion by forming the conductive structure, forming the insulating layer, growing a silicon through the pinholes to form a conductive silicon layer, and forming the dielectric film and the second electrode portion. The capacitor can be formed with various shapes and is increased to 1.5 times or greater in capacitance while maintaining reliability comparable to that of a conventional one.
    • 公开了具有大电容的电容器的半导体器件。 电容器包括:第一电极部分,其具有形成在半导体衬底上的导电结构,在导电结构中具有针孔的绝缘层,以及通过针孔生长的导电硅层;第一电极部分上的第二电极部分, 电介质膜形成在第一和第二电极部分之间。 一种制造该器件的方法包括以下步骤:通过形成导电结构形成第一电极部分,形成绝缘层,通过针孔生长硅以形成导电硅层,以及形成电介质膜和第二电极部分。 电容器可以形成为各种形状,并且在保持与常规可靠性相当的可靠性的同时增加到电容的1.5倍或更大。
    • 3. 发明授权
    • Method of making semiconductor device having a capacitor of large
capacitance
    • 制造具有大容量电容器的半导体器件的方法
    • US5234857A
    • 1993-08-10
    • US880736
    • 1992-05-08
    • Sung-tae KimHyeung-gyu LeeJae-hong Ko
    • Sung-tae KimHyeung-gyu LeeJae-hong Ko
    • H01L21/02H01L27/108H01L29/94
    • H01L28/82H01L27/10808H01L28/84H01L29/94H01L28/90Y10S438/964
    • Disclosed is a semiconductor device having a capacitor of large capacitance. The capacitor includes a first electrode portion which has a conductive structure formed on a semiconductor substrate, an insulating layer with pinholes in the conductive structure, and a conductive silicon layer grown through the pinholes, a second electrode portion on the first electrode portion, and a dielectric film formed between the first and second electrode portions. A method for manufacturing the device includes the steps of forming the first electrode portion by forming the conductive structure, forming the insulating layer, growing a silicon through the pinholes to form a conductive silicon layer, and forming the dielectric film and the second electrode portion. The capacitor can be formed with various shapes and is increased to 1.5 times or greater in capacitance while maintaining reliability comparable to that of a conventional one.
    • 公开了具有大电容的电容器的半导体器件。 电容器包括:第一电极部分,其具有形成在半导体衬底上的导电结构,在导电结构中具有针孔的绝缘层,以及通过针孔生长的导电硅层;第一电极部分上的第二电极部分, 电介质膜形成在第一和第二电极部分之间。 一种制造该器件的方法包括以下步骤:通过形成导电结构形成第一电极部分,形成绝缘层,通过针孔生长硅以形成导电硅层,以及形成电介质膜和第二电极部分。 电容器可以形成为各种形状,并且在保持与常规可靠性相当的可靠性的同时增加到电容的1.5倍或更大。