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    • 5. 发明授权
    • Array substrate for X-ray detector, method of manufacturing the same, X-ray detector having the same installed therein, and method of manufacturing X-ray detector
    • 用于X射线检测器的阵列衬底,其制造方法,安装有X射线检测器的X射线检测器,以及X射线检测器的制造方法
    • US08044362B2
    • 2011-10-25
    • US12245194
    • 2008-10-03
    • Kyung-Sang GooDae-Ho ChooKwan-Wook Jung
    • Kyung-Sang GooDae-Ho ChooKwan-Wook Jung
    • H01L27/146G01T1/20
    • G01T1/20
    • An x-ray detector including an array substrate including blocks extending along the array substrate in a first direction. Each of the blocks includes cells that are each associated with a data line extending in parallel with the first direction and a gate line extending perpendicularly to the first direction such that the data line crosses the gate line, a thin film transistor respectively connected to the gate and data lines, and a photodiode connected to the thin film transistor to receive light. The cells store charges corresponding to an amount of the light. Gate drivers are connected to ends of the gate lines to select rows of the cells associated with each of the gate lines. Read-out circuits are connected to ends of the data lines to read out charges stored in the cells, of each of the selected rows, that are respectively associated with each of the data lines.
    • 一种X射线检测器,包括阵列基板,该阵列基板包括沿第一方向沿阵列基板延伸的块。 每个块包括每个与与第一方向并行延伸的数据线相关联的单元和垂直于第一方向延伸的栅极线,使得数据线与栅极线交叉,分别连接到栅极的薄膜晶体管 和数据线,以及连接到薄膜晶体管以接收光的光电二极管。 细胞存储对应于光量的电荷。 栅极驱动器连接到栅极线的端部以选择与每个栅极线相关联的单元的行。 读出电路连接到数据线的端部,以读出分别与每个数据线相关联的每个所选行的单元格中存储的电荷。
    • 10. 发明授权
    • Thin-film transistor array substrate for x-ray detector and x-ray detector having the same
    • 用于x射线检测器和X射线检测器的薄膜晶体管阵列基板
    • US07767974B2
    • 2010-08-03
    • US12136398
    • 2008-06-10
    • Kwan-Wook JungDae-Ho Choo
    • Kwan-Wook JungDae-Ho Choo
    • H01L27/146
    • H01L27/14663H01L27/12
    • In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.
    • 在用于X射线检测器的薄膜晶体管(“TFT”)阵列基板和具有TFT阵列基板的X射线检测器中,TFT阵列基板包括栅极布线,栅极绝缘层,有源层, 数据布线,光电二极管,有机绝缘层和偏置布线。 栅极布线形成在绝缘基板上,并且包括栅极线和栅电极。 栅极绝缘层覆盖栅极布线。 有源层形成在栅绝缘层上。 数据线形成在栅极绝缘层上,并包括数据线,源极和漏极。 光电二极管包括下电极和上电极以及光电导层。 有机绝缘层覆盖数据线和光电二极管。 偏置布线形成在有机绝缘层上。 因此,增加了孔径比和可靠性。