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1. 发明申请

US20100187434A1 METHOD FOR PRODUCING A MULTI-BEAM DEFLECTOR ARRAY DEVICE HAVING ELECTRODES 有权
标题翻译：用于制造具有电极的多光束偏转器阵列装置的方法
公开(公告)号：US20100187434A1
公开(公告)日：2010-07-29
申请号：US12692679
申请日：2010-01-25
申请人： Elmar Platzgummer , Heinrich Fragner
发明人： Elmar Platzgummer , Heinrich Fragner
IPC分类号： H01J3/26 , G21K1/087 , H01L21/3205
CPC分类号： H01J37/045 , H01J37/09 , H01J37/3026 , H01J2237/0437
摘要： The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.
摘要翻译：本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法，所述多光束偏转器阵列器件用于粒子束曝光设备，特别是投影光刻系统，所述方法从CMOS晶片开始，并且包括以下步骤：至少一对平行的沟槽在晶片坯料的第一侧上，在下面的电路层不起作用的区域的边缘处，沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中，从而产生用作电极的填充材料列; 将金属接触装置附接到电极的顶部; 构造电极之间的开口，所述开口延伸穿过上述区域，使得列在开口的侧壁上彼此相对布置。

2. 发明授权

US08198601B2 Method for producing a multi-beam deflector array device having electrodes 有权
标题翻译：用于制造具有电极的多光束偏转器阵列器件的方法
公开(公告)号：US08198601B2
公开(公告)日：2012-06-12
申请号：US12692679
申请日：2010-01-25
申请人： Elmar Platzgummer , Heinrich Fragner
发明人： Elmar Platzgummer , Heinrich Fragner
IPC分类号： H01J37/147
CPC分类号： H01J37/045 , H01J37/09 , H01J37/3026 , H01J2237/0437
摘要： The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.
摘要翻译：本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法，所述多光束偏转器阵列器件用于粒子束曝光设备，特别是投影光刻系统，所述方法从CMOS晶片开始，并且包括以下步骤：至少一对平行的沟槽在晶片坯料的第一侧上，在下面的电路层不起作用的区域的边缘处，沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中，从而产生用作电极的填充材料柱; 将金属接触装置附接到电极的顶部; 构造电极之间的开口，所述开口延伸穿过上述区域，使得列在开口的侧壁上彼此相对布置。

3. 发明授权

US07777201B2 Method for maskless particle-beam exposure 有权
标题翻译：无掩模粒子束曝光方法
公开(公告)号：US07777201B2
公开(公告)日：2010-08-17
申请号：US12051087
申请日：2008-03-19
申请人： Heinrich Fragner , Elmar Platzgummer
发明人： Heinrich Fragner , Elmar Platzgummer
IPC分类号： H01J49/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J2237/30483
摘要： For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.
摘要翻译：对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置（v）相对于轴线横向移动（v）的目标，对于像素曝光期间，图像的位置与目标一起移动，在该像素曝光期间，覆盖目标的相对运动的距离，该距离至少是孔径图像的宽度（w）的倍数，目标，并且在所述像素曝光周期之后，光束图像的位置改变，位置的变化通常补偿光束图像的位置的整体移动。

4. 发明授权

US08278635B2 Global point spreading function in multi-beam patterning 有权
标题翻译：多光束图案中的全局点扩散函数
公开(公告)号：US08278635B2
公开(公告)日：2012-10-02
申请号：US12708737
申请日：2010-02-19
申请人： Elmar Platzgummer , Heinrich Fragner , Stefan Cernusca
发明人： Elmar Platzgummer , Heinrich Fragner , Stefan Cernusca
IPC分类号： H01J3/26
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： In a particle multi-beam structuring apparatus for forming a pattern on a target's surface using a beam of electrically charged particles, during exposure steps the particle beam is produced, directed through a pattern definition means producing a patterned particle beam composed of multiple beamlets, and projected by an optical column including a controllable deflection means onto the target surface to form, at a nominal location on the target, a beam image comprising the image of defining structures in the pattern definition means. The beam image's nominal location relative to the target is changed between exposure steps. The actual location of the beam image is varied within each exposure step around the nominal location, through a set of locations realizing a distribution of locations within the image plane around a mean location coinciding with the nominal location, thus introducing an additional blur which is homogenous over the entire beam image.
摘要翻译：在用于使用带电粒子束在目标表面上形成图案的粒子多光束结构装置中，在曝光步骤期间，通过产生由多个子束组成的图案化粒子束的图案定义装置产生粒子束，并且通过包括可控偏转装置的光学柱被投影到目标表面上，以在目标的标称位置处形成包括图案定义装置中的限定结构的图像的光束图像。相对于目标的光束图像的标称位置在曝光步骤之间改变。射束图像的实际位置在标称位置周围的每个曝光步骤内通过一组位置实现，该位置实现在与标称位置重合的平均位置周围的图像平面内的位置的分布，从而引入均匀的附加模糊在整个光束图像上。

5. 发明授权

US08258488B2 Compensation of dose inhomogeneity and image distortion 有权
标题翻译：剂量不均匀性和图像畸变的补偿
公开(公告)号：US08258488B2
公开(公告)日：2012-09-04
申请号：US12535744
申请日：2009-08-05
申请人： Elmar Platzgummer , Heinrich Fragner , Stefan Cernusca
发明人： Elmar Platzgummer , Heinrich Fragner , Stefan Cernusca
IPC分类号： A61N5/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/20 , G03F7/70433 , H01J37/3174
摘要： An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.
摘要翻译：用于在靶上限定图案的装置中的改进的孔布置，用于粒子束曝光装置，通过照射带电粒子束并允许光束仅通过多个孔。该装置包括孔阵列，该孔阵列具有多个相同形状的孔，限定穿透孔的子束的形状和相对位置。消隐装置关闭穿过孔并由它们限定的选定子束的通过。根据通过小偏差偏离规则排列的布置，孔径布置在孔阵列上，调整由粒子束曝光装置引起的变形，并且孔径阵列的孔径的大小沿孔径阵列依次不同以允许通过孔和相应的开口调节在靶上辐射的电流。

6. 发明申请

US20080237460A1 METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE 有权
标题翻译：无障碍颗粒光束曝光方法
公开(公告)号：US20080237460A1
公开(公告)日：2008-10-02
申请号：US12051087
申请日：2008-03-19
申请人： Heinrich Fragner , Elmar Platzgummer
发明人： Heinrich Fragner , Elmar Platzgummer
IPC分类号： G01N23/00 , G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J2237/30483
摘要： For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.
摘要翻译：对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置（v）相对于轴线横向移动（v）的目标，对于像素曝光期间，图像的位置与目标一起移动，在该像素曝光期间，覆盖目标的相对运动的距离，该距离至少是孔径图像的宽度（w）的倍数，目标，并且在所述像素曝光周期之后，光束图像的位置改变，位置的变化通常补偿光束图像的位置的整体移动。

7. 发明授权

US08222621B2 Method for maskless particle-beam exposure 有权
标题翻译：无掩模粒子束曝光方法
公开(公告)号：US08222621B2
公开(公告)日：2012-07-17
申请号：US12619480
申请日：2009-11-16
申请人： Heinrich Fragner , Elmar Platzgummer , Robert Nowak , Adrian Bürli
发明人： Heinrich Fragner , Elmar Platzgummer , Robert Nowak , Adrian Bürli
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.
摘要翻译：在无掩模粒子多波束处理装置中，粒子束通过图案定义系统投射，根据期望的图案产生规则的子束阵列，该期望图案被投影到相对于图案沿扫描方向以连续速度移动的目标定义系统在一系列均匀曝光步骤期间，光束图像沿着扫描方向与目标一起移动，并且在曝光步骤之间，光束图像的位置相对于目标改变。在每个曝光步骤期间，目标覆盖的距离大于目标上相邻图像元素的相互距离。在连续曝光步骤中的光束图像的位置对应于交错放置网格的序列，并且在每个曝光步骤之后，光束图像被移动到与不同的放置网格相关联的位置，其中位置的变化通常包括横跨扫描方向，从而循环通过一组放置网格。

8. 发明申请

US20100127185A1 METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE 有权
标题翻译：无障碍颗粒光束曝光方法
公开(公告)号：US20100127185A1
公开(公告)日：2010-05-27
申请号：US12619480
申请日：2009-11-16
申请人： Heinrich Fragner , Elmar Platzgummer , Robert Nowak , Adrian Bürli
发明人： Heinrich Fragner , Elmar Platzgummer , Robert Nowak , Adrian Bürli
IPC分类号： H01J37/147 , H01J37/30 , H01J3/26
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.
摘要翻译：在无掩模粒子多波束处理装置中，粒子束通过图案定义系统投射，根据期望的图案产生规则的子束阵列，该期望图案被投影到相对于图案沿扫描方向以连续速度移动的目标定义系统在一系列均匀曝光步骤期间，光束图像沿着扫描方向与目标一起移动，并且在曝光步骤之间，光束图像的位置相对于目标改变。在每个曝光步骤期间，目标覆盖的距离大于目标上相邻图像元素的相互距离。在连续曝光步骤中的光束图像的位置对应于交错放置网格的序列，并且在每个曝光步骤之后，光束图像被移动到与不同的放置网格相关联的位置，其中位置的变化通常包括横跨扫描方向，从而循环通过一组放置网格。

9. 发明申请

US20100124722A1 CONSTANT CURRENT MULTI-BEAM PATTERNING 有权
标题翻译：恒定电流多波束图案
公开(公告)号：US20100124722A1
公开(公告)日：2010-05-20
申请号：US12619071
申请日：2009-11-16
申请人： Heinrich Fragner , Elmar Platzgummer , Adrian Burli
发明人： Heinrich Fragner , Elmar Platzgummer , Adrian Burli
IPC分类号： G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multi-beam exposure apparatus during the exposure of the pattern.
摘要翻译：本发明涉及一种用于在多个曝光步骤中通过带电粒子束在靶的衬底表面上形成图案的方法，其中光束被分裂成图案化的束，并且在两者之间存在相对运动底物和图案定义方式。这导致图案化的粒子束在衬底表面上的有效的总体运动，并且在每个曝光步骤中在衬底表面上曝光图像元素，其中靶上的图像元素暴露于子束多次，即在数字期间多次的曝光步骤。根据从一个曝光步骤到随后的曝光步骤的特定规则，图像元素的曝光步骤的顺序以非线性方式排列，以便减少多光束曝光设备的光学列中的电流变化曝光的图案。

10. 发明授权

US08057972B2 Constant current multi-beam patterning 有权
标题翻译：恒流多光束图案化
公开(公告)号：US08057972B2
公开(公告)日：2011-11-15
申请号：US12619071
申请日：2009-11-16
申请人： Heinrich Fragner , Elmar Platzgummer , Adrian Bürli
发明人： Heinrich Fragner , Elmar Platzgummer , Adrian Bürli
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multi-beam exposure apparatus during the exposure of the pattern.
摘要翻译：本发明涉及一种用于在多个曝光步骤中通过带电粒子束在靶的衬底表面上形成图案的方法，其中光束被分裂成图案化的束，并且在两者之间存在相对运动底物和图案定义方式。这导致图案化的粒子束在衬底表面上的有效的总体运动，并且在每个曝光步骤中在衬底表面上显示图像元素，其中靶上的图像元素暴露于子束，在数字期间多次的曝光步骤。根据从一个曝光步骤到随后的曝光步骤的特定规则，图像元素的曝光步骤的顺序以非线性方式排列，以便减少多光束曝光设备的光学列中的电流变化曝光的图案。

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