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1. 发明专利

AU2007205962A1 Spiro compounds and methods of use 未知
公开(公告)号：AU2007205962A1
公开(公告)日：2007-07-26
申请号：AU2007205962
申请日：2007-01-14
申请人： GUOQING CHEN
发明人： CHEN GUOQING PAUL
IPC分类号： A01N43/38 , A61K31/40
摘要： The present invention relates to spiro compounds of formula I, processes for their preparation, pharmaceutical compositions containing them as active ingredient, methods for the treatment of disease states such as cancers associated with protein tyrosine kinases, especially epidermal growth factor (EGF) and vascular endothelial growth factor (VEGF), to their method of use as medicaments and to their method of use in the manufacture of medicaments for use in the production of inhibition of tyrosine kinase reducing effects in warm-blooded animals such as humans.

2. 发明专利

AU2009282962A1 Compounds as kinase inhibitors 未知
公开(公告)号：AU2009282962A1
公开(公告)日：2010-02-25
申请号：AU2009282962
申请日：2009-08-13
申请人： ADVENCHEN LAB LLC , GUOQING CHEN
发明人： CHEN GUOQING PAUL CEO
IPC分类号： A01N43/42 , A61K31/43 , A61K31/44
摘要： The present invention relates to compounds of Formula I, processes for their preparation, pharmaceutical compositions containing them as active ingredient, methods for the treatment of disease states associated with angiogenesis, such as cancers associated with protein tyrosine kinases, to their use as medicaments for use in the production of inhibition of tyrosine kinases reducing effects in warm-blooded animals such as humans.

3. 发明专利

BR112017023639A2 processo para o preparo de um agente anticancerígeno, 1-((4-(4-fluoro-2-metil-1h-indol-5-iloxi)-6-metoxi-quinolin-7-iloxi)metil)ciclopropanamina, sua forma cristalina e seus sais 未知
公开(公告)号：BR112017023639A2
公开(公告)日：2018-07-17
申请号：BR112017023639
申请日：2016-05-03
申请人： ADVENCHEN PHARMACEUTICALS LLC , PAUL GUOQING CHEN
发明人： CHEN GUOQING PAUL , YAN CHANGREN
IPC分类号： C07D215/233 , A61K31/4706 , A61K31/4709 , C07D215/42
摘要： ?processo para o preparo de um agente anticancerígeno, 1-((4-(4-fluoro-2-metil-1h-indol-5-iloxi)-6-metoxi-quinolin-7-iloxi)metil)ciclopropanamina, sua forma cristalina e seus sais?, a presente invenção refere-se a um novo processo de sintetização de 1-((4-(4-fluoro-2-metil-1h-indol-5-iloxi)-6-metoxi-quinolin-7-iloxi)metil)ciclopropanamina (al3818). foi preparada uma forma cristalina estável de a13818. os sais e as formas cristalinas de al3818 também foram preparados. as atividades anticancerígenas e optométricas do al3818 e de seus sais foram testadas. o novo processo foi apresentado no esquema i.

4. 发明专利

BRPI0912475B8 compostos como inibidores de quinase, método para produção dos ditos compostos e composição farmacêutica 未知
公开(公告)号：BRPI0912475B8
公开(公告)日：2021-05-25
申请号：BRPI0912475
申请日：2009-08-13
申请人： ADVENCHEN LABORATORIES LLC , PAUL GUOQING CHEN
发明人： PAUL GUOQING CHEN
IPC分类号： A61K31/43 , A01N43/42 , A61K31/44
摘要： compostos como inibidores de quinase, por tratar a invenção dos compostos da formula i, dos processos para a sua preparação, e das composições farmacêuticas que os incorporam como ingredientes ativos, métodos para o tratamento de estados de doenças associados à angiogêneses, tais como cânceres associados com proteínas tirosina quinases, e à sua utilização como medicamentos para a produção de inibidores de efeitos de redução de tirosina quinase em animais de sangue quente tais como humanos.

5. 发明授权

US08642624B2 Substituted alkylamine derivatives and methods of use 有权
标题翻译：取代的烷基胺衍生物和使用方法
公开(公告)号：US08642624B2
公开(公告)日：2014-02-04
申请号：US13297213
申请日：2011-11-15
申请人： Guoqing Chen , Jeffrey A. Adams , Jean E. Bemis , Shon Booker , Guolin Cai , Lucian V. DiPietro , Celia Dominguez , Daniel Elbaum , Julie Germain , Stephanie Geuns-Meyer , Michael K. Handley , Qi Huang , Joseph L. Kim , Tae-Seong Kim , Alexander S. Kiselyov , Xiaohu Ouyang , Vinod F. Patel , Leon M. Smith , Markian M. Stec , Andrew Tasker , Ning Xi , Shimin Xu , Chester Chenguang Yuan , Michael D. Croghan
发明人： Guoqing Chen , Jeffrey A. Adams , Jean E. Bemis , Shon Booker , Guolin Cai , Lucian V. DiPietro , Celia Dominguez , Daniel Elbaum , Julie Germain , Stephanie Geuns-Meyer , Michael K. Handley , Qi Huang , Joseph L. Kim , Tae-Seong Kim , Alexander S. Kiselyov , Xiaohu Ouyang , Vinod F. Patel , Leon M. Smith , Markian M. Stec , Andrew Tasker , Ning Xi , Shimin Xu , Chester Chenguang Yuan , Michael D. Croghan
IPC分类号： A01N43/40 , A61K31/44 , A01N43/38 , A61K31/40 , A61K31/405
CPC分类号： C07D213/82 , A61K31/443 , A61K31/4439 , A61K31/444 , A61K31/4545 , A61K31/4709 , A61K31/4725 , A61K31/496 , A61K31/506 , A61K31/5377 , A61K31/538 , C07D401/12 , C07D401/14 , C07D405/12 , C07D405/14 , C07D409/00 , C07D409/04 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/14 , C07D471/04
摘要： Selected heterocyclic compounds are effective for prophylaxis and treatment of diseases, such as angiogenesis mediated diseases. The invention encompasses novel compounds, analogs, prodrugs and pharmaceutically acceptable derivatives thereof, pharmaceutical compositions and methods for prophylaxis and treatment of diseases and other maladies or conditions involving, cancer and the like.
摘要翻译：所选择的杂环化合物对于预防和治疗诸如血管生成介导的疾病等疾病是有效的。本发明包括新型化合物，类似物，前药及其药学上可接受的衍生物，用于预防和治疗疾病和其它疾病或涉及癌症等的病症的药物组合物和方法。

6. 发明授权

US07507656B2 Method and structure for low k interlayer dielectric layer 有权
标题翻译：低k层间介质层的方法和结构
公开(公告)号：US07507656B2
公开(公告)日：2009-03-24
申请号：US10927828
申请日：2004-08-27
申请人： Guoqing Chen
发明人： Guoqing Chen
IPC分类号： H01L21/4763 , H01L23/522
CPC分类号： H01L21/7682 , H01L21/76885 , H01L2221/1047
摘要： An integrated circuit interconnect structure. The structure includes a substrate and a layer of transistor elements overlying the substrate. A first interlayer dielectric layer is formed overlying the layer of transistor elements. An etch stop layer is formed overlying the first interlayer dielectric layer. A contact structure including metallization is within the first interlayer dielectric layer and a metal layer is coupled to the contact structure. A passivation layer is formed overlying the metal layer. Preferably, an air gap layer is coupled between the passivation layer and the metal layer, the air gap layer allowing a portion of the metal layer to be free standing. Depending upon the embodiment, a portion of the air gap layer may be filled with silicon bearing nanoparticles, which may be oxidized at low temperatures. This oxidized layer provides mechanical support and low k dielectric characteristics. Preferably, a portion of the air gap layer is filled with a low k dielectric material as well.
摘要翻译：集成电路互连结构。该结构包括衬底和覆盖衬底的晶体管元件层。第一层间介质层形成在晶体管元件层上。形成覆盖在第一层间介电层上的蚀刻停止层。包括金属化的接触结构在第一层间电介质层内，并且金属层耦合到接触结构。形成覆盖金属层的钝化层。优选地，气隙层耦合在钝化层和金属层之间，气隙层允许金属层的一部分自由站立。根据实施例，气隙层的一部分可以填充有承载硅的纳米颗粒，其可以在低温下被氧化。该氧化层提供机械支持和低k介电特性。优选地，气隙层的一部分也用低k电介质材料填充。

7. 发明授权

US07105682B2 Substituted amine derivatives and methods of use 有权
公开(公告)号：US07105682B2
公开(公告)日：2006-09-12
申请号：US10046622
申请日：2002-01-10
申请人： Guoqing Chen , Jeffrey Adams , Jean Bemis , Lucian Di Pietro , Celia Dominguez , Daniel Elbaum , Julie Germain , Qi Huang , Joseph L. Kim , Xiaohu Ouyang , Vinod F. Patel , Leon M. Smith , Andrew Tasker , Ning Xi , Shimin Xu , Chester Chenguang Yuan , Michael Croghan , Tae-Seong Kim
发明人： Guoqing Chen , Jeffrey Adams , Jean Bemis , Lucian Di Pietro , Celia Dominguez , Daniel Elbaum , Julie Germain , Qi Huang , Joseph L. Kim , Xiaohu Ouyang , Vinod F. Patel , Leon M. Smith , Andrew Tasker , Ning Xi , Shimin Xu , Chester Chenguang Yuan , Michael Croghan , Tae-Seong Kim
IPC分类号： C07D401/02 , A61K31/44
CPC分类号： C07D401/14 , A61K31/00 , C07D401/12 , C07D405/14 , C07D409/14 , C07D413/12 , C07D413/14 , C07D417/14 , C07D471/04 , Y02A50/401
摘要： Selected amines are effective for prophylaxis and treatment of diseases, such as angiogenesis mediated diseases. The invention encompasses novel compounds, analogs, prodrugs and pharmaceutically acceptable salts thereof, pharmaceutical compositions and methods for prophylaxis and treatment of diseases and other maladies or conditions involving, cancer and the like. The subject invention also relates to processes for making such compounds as well as to intermediates useful in such processes.

8. 发明授权

US06940135B2 Mask-ROM process and device to prevent punch through using a halo implant process 有权
标题翻译： Mask-ROM过程和设备，以防止通过使用光晕植入过程打孔
公开(公告)号：US06940135B2
公开(公告)日：2005-09-06
申请号：US10391537
申请日：2003-03-17
申请人： Guoqing Chen , Roger Lee
发明人： Guoqing Chen , Roger Lee
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8246 , H01L27/112 , H01L29/10
CPC分类号： H01L29/66583 , H01L21/26586 , H01L27/112 , H01L27/1126 , H01L29/1045 , H01L29/66537
摘要： A method and device for manufacturing a mask ROM integrated circuit device to reduce influences of punch through between source and channel regions that output improper program readings. The method includes forming well regions using an implant process on semiconductor substrate and forming a plurality of buried implant regions through first patterned mask. The first patterned mask is formed overlying the semiconductor substrate. Each of the buried implant regions includes a source region and a drain region for each respective memory cell region. The memory cell region is one of a plurality of memory cell regions. The method also forms pocket regions adjacent to a vicinity of each of the buried implant regions within the channel region for each of the memory cell regions. A first pocket region is defined between the channel region and source region and a second pocket region is defined between the channel region and the drain region for each memory cell region. The method includes programming one or more selected channel regions using implantation to program respective one or more selected memory cell regions.
摘要翻译：一种用于制造掩模ROM集成电路器件的方法和装置，用于减少输出不正确程序读数的源极和通道区域之间穿透的影响。该方法包括使用在半导体衬底上的注入工艺形成阱区，并通过第一图案化掩模形成多个埋置的注入区。第一图案化掩模形成在半导体衬底上。每个埋置的注入区域包括用于每个相应存储单元区域的源极区域和漏极区域。存储单元区域是多个存储单元区域之一。该方法还形成与每个存储单元区域的通道区域内的每个埋置注入区域附近相邻的凹穴区域。在沟道区域和源极区域之间限定第一杂质区域，并且在每个存储器单元区域的沟道区域和漏极区域之间限定第二穴状区域。该方法包括使用植入来编程一个或多个所选择的沟道区域以对相应的一个或多个选择的存储器单元区域进行编程。

9. 发明授权

US06878714B2 Substituted alkylamine derivatives and methods of use 有权
公开(公告)号：US06878714B2
公开(公告)日：2005-04-12
申请号：US10197974
申请日：2002-07-17
申请人： Benny Askew , Jeffrey Adams , Shon Booker , Guoqing Chen , Lucian V. DiPietro , Daniel Elbaum , Julie Germain , Stephanie D. Geuns-Meyer , Gregory J. Habgood , Michael Handley , Qi Huang , Tae-Seong Kim , Aiwen Li , Nobuko Nishimura , Rana Nomak , Vinod F. Patel , Babak Riahi , Joseph L. Kim , Ning Xi , Kevin Yang , Chester Chenguang Yuan
发明人： Benny Askew , Jeffrey Adams , Shon Booker , Guoqing Chen , Lucian V. DiPietro , Daniel Elbaum , Julie Germain , Stephanie D. Geuns-Meyer , Gregory J. Habgood , Michael Handley , Qi Huang , Tae-Seong Kim , Aiwen Li , Nobuko Nishimura , Rana Nomak , Vinod F. Patel , Babak Riahi , Joseph L. Kim , Ning Xi , Kevin Yang , Chester Chenguang Yuan
IPC分类号： A61K31/4436 , A61K31/4439 , A61K31/444 , A61K31/4709 , A61K31/496 , A61K31/501 , A61K31/506 , A61K31/5377 , A61P9/10 , A61P11/06 , A61P15/08 , A61P17/06 , A61P19/00 , A61P27/02 , A61P29/00 , A61P35/00 , A61P43/00 , C07D213/82 , C07D401/12 , C07D401/14 , C07D405/12 , C07D405/14 , C07D407/14 , C07D409/04 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/14 , C07D471/02 , C07D471/04 , C07D491/02 , A61K31/4427
CPC分类号： C07D213/82 , C07D401/12 , C07D401/14 , C07D405/12 , C07D405/14 , C07D409/04 , C07D409/12 , C07D409/14 , C07D413/14 , C07D417/14 , C07D471/04
摘要： Selected amines are effective for prophylaxis and treatment of diseases, such as angiogenesis mediated diseases. The invention encompasses novel compounds, analogs, prodrugs and pharmaceutically acceptable salts thereof, pharmaceutical compositions and methods for prophylaxis and treatment of diseases and other maladies or conditions involving, cancer and the like. The subject invention also relates to processes for making such compounds as well as to intermediates useful in such processes.

10. 发明授权

US06683338B2 Structure and method for transverse field enhancement 有权
公开(公告)号：US06683338B2
公开(公告)日：2004-01-27
申请号：US10251340
申请日：2002-09-19
申请人： Guoqing Chen
发明人： Guoqing Chen
IPC分类号： H01L257295
CPC分类号： G11C11/15
摘要： Structures and methods for making a magnetic structure are discussed. Various embodiments increase a magnetic field to unambiguously select a magnetic memory cell structure. One method includes folding a current line into two portions around a magnetic memory cell structure. Each portion contributes its magnetic flux to increase the magnetic field to unambiguously select the magnetic memory cell structure. Another method increases the flux density by reducing a cross-sectional area of a portion of the current line, wherein the portion of the current line is adjacent to the to the magnetic memory cell structure.

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