专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130228218A1 THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF 有权
标题翻译：薄膜型太阳能电池及其制造方法
公开(公告)号：US20130228218A1
公开(公告)日：2013-09-05
申请号：US13560951
申请日：2012-07-27
申请人： Sung-Chul Lee , Doo-Youl Lee , Young-Jin Kim , Young-Su Kim , Young-Soo Kim , Dong-Hun Lee
发明人： Sung-Chul Lee , Doo-Youl Lee , Young-Jin Kim , Young-Su Kim , Young-Soo Kim , Dong-Hun Lee
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/065 , H01L31/02168 , H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.
摘要翻译：一种制造太阳能电池的方法包括在半导体衬底上形成具有第一导电类型的掺杂部分，在半导体衬底上生长氧化物层，在氧化物层中形成多个凹陷部分，在半导体上进一步生长氧化物层在所述半导体衬底的与所述凹部对应的区域上形成具有第二导电类型的掺杂部分，形成与所述第一导电类型的所述掺杂部分电耦合的第一导电电极，以及在所述半导体衬底上形成第二导电电极并且电耦合到具有第二导电类型的掺杂部分，其中具有第一和第二导电类型的掺杂部分之间的间隙对应于通过进一步生长氧化物层形成的氧化物层的宽度。

2. 发明申请

US20130133729A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130133729A1
公开(公告)日：2013-05-30
申请号：US13562751
申请日：2012-07-31
申请人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Young-Su KIM , Young-Sang PARK
发明人： Chan-Bin MO , Doo-Youl LEE , Young-Jin KIM , Min-Seok OH , Yun-Seok LEE , Nam-Kyu SONG , Cho-Young LEE , Young-Su KIM , Young-Sang PARK
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper.
摘要翻译：太阳能电池在半导体衬底上包括半导体衬底，第一本征半导体层和第二本征半导体层，第一本征半导体层和第二本征半导体层彼此间隔开，第一导电半导体层和第二本征半导体层分别设置在第一本征半导体层和第二本征半导体层上的导电半导体层以及分别包括在第一导电半导体层和第二导电半导体层上的底层的第一电极和第二电极，底层包括透明导电氧化物和底层上的中间层，中间层包括铜。

3. 发明申请

US20130112253A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20130112253A1
公开(公告)日：2013-05-09
申请号：US13565828
申请日：2012-08-03
申请人： Min-Seok OH , Doo-Youl Lee , Young-Jin KIM , Min PARK , Yun-Seok LEE , Nam-Kyu SONG , Dong-Seop KIM , Cho-Young LEE , Chan-Bin MO , Young-Su KIM , Hoon-Ha JEON , Yeon-Ik JANG , Jun-Ki HONG , Young-Sang PARK , Chan-Yoon JUNG
发明人： Min-Seok OH , Doo-Youl Lee , Young-Jin KIM , Min PARK , Yun-Seok LEE , Nam-Kyu SONG , Dong-Seop KIM , Cho-Young LEE , Chan-Bin MO , Young-Su KIM , Hoon-Ha JEON , Yeon-Ik JANG , Jun-Ki HONG , Young-Sang PARK , Chan-Yoon JUNG
IPC分类号： H01L31/076
CPC分类号： H01L31/03529 , H01L31/0224 , H01L31/022408 , H01L31/022425 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.
摘要翻译：一种太阳能电池，包括第一导电型半导体衬底; 在半导体衬底的前表面上的第一本征半导体层; 在所述第一本征半导体层的至少一个表面上的第一导电类型的第一半导体层; 在所述半导体衬底的背面上的第二导电型第二半导体层; 在所述第二半导体层和所述半导体衬底之间的第二本征半导体层; 在所述半导体衬底的背面上的第一导电型第三半导体层，所述第三半导体层与所述第二半导体层间隔开; 以及在第三半导体层和半导体衬底之间的第三本征半导体层。

4. 发明申请

US20130104974A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130104974A1
公开(公告)日：2013-05-02
申请号：US13620475
申请日：2012-09-14
申请人： Young-Su Kim , Dong-Seop Kim , Doo-Youl Lee , Young-Jin Kim , Young-Sang Park , Chan-Bin Mo , Sung-Chul Lee
发明人： Young-Su Kim , Dong-Seop Kim , Doo-Youl Lee , Young-Jin Kim , Young-Sang Park , Chan-Bin Mo , Sung-Chul Lee
IPC分类号： H01L31/0216
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.
摘要翻译：太阳能电池包括：硅基板，包括用于接收光的前表面和与前表面相对的后表面，在后表面上的发射极扩散区域，并掺杂有与硅基板的极性相反的第一极性; 基底扩散区域，并且掺杂有与硅衬底的极性相同的第二极性，以及发射极扩散区域和基极扩散区域之间的绝缘间隙，其中，基极扩散区域具有闭合的多边形形状，并且其中绝缘间隙与基底扩散区相邻。

5. 发明申请

US20110306164A1 METHOD FOR MANUFACTURING SOLAR CELL 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US20110306164A1
公开(公告)日：2011-12-15
申请号：US12893944
申请日：2010-09-29
申请人： Young Su KIM , Doo-Youl LEE
发明人： Young Su KIM , Doo-Youl LEE
IPC分类号： H01L31/0352
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate.
摘要翻译：根据示例性实施例的太阳能电池的制造方法包括：在基板上形成第一掺杂膜; 图案化第一掺杂膜以形成第一掺杂膜图案并且暴露基板的一部分; 在所述第一掺杂膜图案上形成扩散防止膜以覆盖所述基板的所述暴露部分; 蚀刻扩散防止膜，以在第一掺杂膜图案的侧表面上形成间隔物; 在所述第一掺杂膜图案上形成第二掺杂膜以覆盖所述间隔物和暴露的基板; 通过将杂质从第一掺杂膜图案扩散到衬底中而在衬底表面上形成第一掺杂区; 以及通过将杂质从所述第二掺杂膜图案扩散到所述衬底中而在所述衬底表面上形成第二掺杂区域。

6. 发明申请

US20110284060A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110284060A1
公开(公告)日：2011-11-24
申请号：US12917104
申请日：2010-11-01
申请人： Doo-Youl Lee
发明人： Doo-Youl Lee
IPC分类号： H01L31/06 , H01L31/0224
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/02366 , H01L31/035281 , Y02E10/547
摘要： A solar cell and method of fabricating the same using a simplified process. The solar cell includes a semiconductor substrate of a first conductivity type having a front surface configured to receive sunlight and a back surface opposite to the front surface, and a diffusion region of the first conductivity type and a diffusion region of a second conductivity type extending from the back surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth, wherein the diffusion region of the first conductivity type is counter doped with both a dopant of the first conductivity type and a dopant of the second conductivity type.
摘要翻译：太阳能电池及其制造方法。太阳能电池包括：第一导电类型的半导体衬底，其具有被配置为接收太阳光的前表面和与前表面相对的后表面;以及第一导电类型的扩散区域和从第二导电类型延伸的第二导电类型的扩散区域半导体衬底的背表面到半导体衬底到预定深度，其中第一导电类型的扩散区域被掺杂有第一导电类型的掺杂剂和第二导电类型的掺杂剂。

7. 发明申请

US20110126907A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110126907A1
公开(公告)日：2011-06-02
申请号：US12819346
申请日：2010-06-21
申请人： Jin-Wook LEE , Doo-Youl LEE , Hwa-Young KO
发明人： Jin-Wook LEE , Doo-Youl LEE , Hwa-Young KO
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02167 , H01L31/02168 , H01L31/0682 , Y02E10/547
摘要： A solar cell includes; a semiconductor substrate, an n+ region disposed on a surface of the semiconductor substrate, a plurality of first electrodes connected to the n+ region, a p+ region disposed on the surface of the semiconductor substrate and separated from the n+ region, a second electrode connected to the p+ region, and a first dielectric layer which has a positive fixed charge and is disposed between adjacent first electrodes of the plurality of first electrodes, and a method of manufacturing the same.
摘要翻译：太阳能电池包括：半导体衬底，设置在半导体衬底的表面上的n +区，连接到n +区的多个第一电极，设置在半导体衬底的表面上并与n +区分离的p +区，连接到 p +区，以及具有正固定电荷且设置在多个第一电极的相邻第一电极之间的第一电介质层及其制造方法。

8. 发明申请

US20110048529A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20110048529A1
公开(公告)日：2011-03-03
申请号：US12828588
申请日：2010-07-01
申请人： Doo-Youl Lee , Dong-Seop Kim , Jin-Wook Lee , Hwa-Young Ko
发明人： Doo-Youl Lee , Dong-Seop Kim , Jin-Wook Lee , Hwa-Young Ko
IPC分类号： H01L31/0236 , H01L31/0256
CPC分类号： H01L31/068 , H01L31/02245 , Y02E10/547
摘要： A solar cell includes a semiconductor substrate having a plurality of contact holes penetrating therethrough, from one surface to the opposing surface and including a part having a first conductive layer selected from p-type and n-type and a part having a second conductive layer different from the first conductive layer and selected from p-type and n-type semiconductor, a first electrode formed on one surface of the semiconductor substrate and electrically connected with the part having the first conductive layer, a second electrode formed on the other surface of the semiconductor substrate and electrically connected with the first electrode, and a third electrode formed on the same surface as in the second electrode and electrically connected with the part having the second conductive layer of the semiconductor substrate, wherein the plurality of contact holes form a contact hole group, and the first electrode and the second electrode are connected through one or more of the plurality of contact holes of the contact hole group.
摘要翻译：太阳能电池包括从一个表面到相对的表面具有穿过其的多个接触孔的半导体衬底，并且包括具有选自p型和n型的第一导电层的部分和具有不同的第二导电层的部分从所述第一导电层中选择p型和n型半导体，形成在所述半导体衬底的一个表面上并与具有所述第一导电层的部分电连接的第一电极，形成在所述第一导电层的另一个表面上的第二电极半导体衬底并与第一电极电连接;以及第三电极，其形成在与第二电极相同的表面上并与具有半导体衬底的第二导电层的部分电连接，其中多个接触孔形成接触孔并且第一电极和第二电极通过多个中的一个或多个连接的接触孔组的接触孔。

9. 发明授权

US07842450B2 Method of forming a semiconductor device 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US07842450B2
公开(公告)日：2010-11-30
申请号：US11711781
申请日：2007-02-28
申请人： Doo-youl Lee , Suk-joo Lee , Yool Kang , Han-ku Cho , Chang-jin Kang , Jae-ok Yoo , Sung-chan Park
发明人： Doo-youl Lee , Suk-joo Lee , Yool Kang , Han-ku Cho , Chang-jin Kang , Jae-ok Yoo , Sung-chan Park
IPC分类号： G03F7/00
CPC分类号： H01L21/0337
摘要： A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.
摘要翻译：形成半导体器件的方法包括：在目标层上形成第一掩模图案，第一掩模图案暴露目标层的第一部分，形成中间材料层，包括在第一掩模图案的一侧上沉积中间材料层膜掩模图案和目标层的第一部分，并且使中间材料层膜变薄以形成中间材料层，形成暴露中间材料层的第二部分的第二掩模图案，去除中间材料的暴露的第二部分层以露出目标层，以及使用第一和第二掩模图案作为图案掩模来图案化目标层。

10. 发明授权

US07787301B2 Flash memory device using double patterning technology and method of manufacturing the same 有权
标题翻译：使用双重图案化技术的闪存器件及其制造方法
公开(公告)号：US07787301B2
公开(公告)日：2010-08-31
申请号：US11590207
申请日：2006-10-31
申请人： Doo-youl Lee , Han-ku Cho , Suk-joo Lee , Gi-sung Yeo , Cha-won Koh , Pan-suk Kwak
发明人： Doo-youl Lee , Han-ku Cho , Suk-joo Lee , Gi-sung Yeo , Cha-won Koh , Pan-suk Kwak
IPC分类号： G11C16/06
CPC分类号： H01L27/11531 , H01L27/11526
摘要： Provided are a flash memory device and a method of manufacturing the same. The flash memory device includes strings. Each of the strings has a string selection line, a ground selection line, and an odd number of word lines formed between the string selection line and the ground selection line.
摘要翻译：提供一种闪速存储器件及其制造方法。闪存设备包括字符串。串中的每一个具有字符串选择线，接地选择线和在串选择线和地选择线之间形成的奇数个字线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式