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1. 发明授权

US09130060B2 Integrated circuit having a vertical power MOS transistor 有权
标题翻译：具有垂直功率MOS晶体管的集成电路
公开(公告)号：US09130060B2
公开(公告)日：2015-09-08
申请号：US13588070
申请日：2012-08-17
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/423 , H01L29/78
CPC分类号： H01L27/0922 , H01L21/26513 , H01L21/30604 , H01L21/76224 , H01L21/823418 , H01L21/823437 , H01L21/823481 , H01L21/823487 , H01L21/82385 , H01L21/823878 , H01L21/823885 , H01L21/823892 , H01L29/0649 , H01L29/0847 , H01L29/1095 , H01L29/4236 , H01L29/42364 , H01L29/66621 , H01L29/66666 , H01L29/78 , H01L29/7813 , H01L29/7827
摘要： An integrated circuit comprises a plurality of lateral devices and quasi vertical devices formed in a same semiconductor die. The quasi vertical devices include two trenches. A first trench is formed between a first drain/source region and a second drain/source region. The first trench comprises a dielectric layer formed in a bottom portion of the first trench and a gate region formed in an upper portion of the first trench. A second trench is formed on an opposite side of the second drain/source region from the first trench. The second trench is coupled between the second drain/source region and a buried layer, wherein the second trench is of a same depth as the first trench.
摘要翻译：集成电路包括形成在同一半导体管芯中的多个横向器件和准垂直器件。准垂直装置包括两个沟槽。在第一漏极/源极区域和第二漏极/源极区域之间形成第一沟槽。第一沟槽包括形成在第一沟槽的底部中的介质层和形成在第一沟槽的上部中的栅极区域。第二沟槽形成在与第一沟槽的第二漏极/源极区域相对的一侧上。第二沟槽耦合在第二漏极/源极区域和掩埋层之间，其中第二沟槽具有与第一沟槽相同的深度。

2. 发明授权

US09087920B2 Vertical power MOSFET and methods of forming the same 有权
标题翻译：垂直功率MOSFET及其形成方法
公开(公告)号：US09087920B2
公开(公告)日：2015-07-21
申请号：US13588893
申请日：2012-08-17
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
IPC分类号： H01L21/265 , H01L21/8238 , H01L27/092
CPC分类号： H01L21/823487 , H01L21/26513 , H01L21/266 , H01L21/30604 , H01L21/82385 , H01L21/823885 , H01L21/823892 , H01L27/0922 , H01L27/0928 , H01L29/1095 , H01L29/402 , H01L29/66666 , H01L29/66712
摘要： A device includes a semiconductor layer of a first conductivity type, and a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a second conductivity type opposite the first conductivity type. A doped semiconductor region of the first conductivity type is disposed between and contacting the first and the second body regions. A gate dielectric layer is disposed over the first and the second body regions and the doped semiconductor region. A first and a second gate electrode are disposed over the gate dielectric layer, and overlapping the first and the second body regions, respectively. The first and the second gate electrodes are physically separated from each other by a space, and are electrically interconnected. The space between the first and the second gate electrodes overlaps the doped semiconductor region. The device further includes a MOS containing device.
摘要翻译：一种器件包括第一导电类型的半导体层以及半导体层上的第一和第二体区，其中第一和第二体区具有与第一导电类型相反的第二导电类型。第一导电类型的掺杂半导体区域设置在第一和第二主体区域之间并且与第一和第二主体区域接触。栅介质层设置在第一和第二主体区域和掺杂半导体区域上。第一和第二栅极设置在栅极介电层上方，分别与第一和第二体区重叠。第一和第二栅电极在物理上彼此分开一个空间，并且电互连。第一和第二栅电极之间的空间与掺杂半导体区域重叠。该装置还包括一个MOS容纳装置。

3. 发明授权

US08969955B2 Power MOSFET and methods for forming the same 有权
标题翻译：功率MOSFET及其形成方法
公开(公告)号：US08969955B2
公开(公告)日：2015-03-03
申请号：US13615044
申请日：2012-09-13
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
IPC分类号： H01L29/78
CPC分类号： H01L29/66734 , H01L21/823418 , H01L21/823456 , H01L21/823493 , H01L27/0922 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/7803 , H01L29/7813
摘要： A device includes a trench extending into a semiconductor region and having a first conductivity type, and a conductive field plate in the trench. A first dielectric layer separates a bottom and sidewalls of the field plate from the semiconductor region. A main gate is disposed in the trench and overlapping the field plate. A second dielectric layer is disposed between and separating the main gate and the field plate from each other. A Doped Drain (DD) region of the first conductivity type is under the second dielectric layer and having an edge portion overlapping the DD region. A body region includes a first portion at a same level as a portion of the main gate, and a second portion contacting the DD region, wherein the body region is of a second conductivity type opposite the first conductivity type. A MOS-containing device is at a surface of the semiconductor region.
摘要翻译：一种器件包括延伸到半导体区域并具有第一导电类型的沟槽以及沟槽中的导电场板。第一电介质层将场板的底部和侧壁与半导体区域分开。主栅极设置在沟槽中并与场板重叠。第二介电层设置在主栅极和场板之间并将其分离。第一导电类型的掺杂漏极（DD）区域在第二介电层下面，并且具有与DD区域重叠的边缘部分。身体区域包括与主门的一部分相同水平的第一部分和与DD区域接触的第二部分，其中身体区域是与第一导电类型相反的第二导电类型。含MOS器件位于半导体区域的表面。

4. 发明授权

US08669611B2 Apparatus and method for power MOS transistor 有权
标题翻译：功率MOS晶体管的装置和方法
公开(公告)号：US08669611B2
公开(公告)日：2014-03-11
申请号：US13546506
申请日：2012-07-11
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
IPC分类号： H01L29/66
CPC分类号： H01L29/7809 , H01L29/0649 , H01L29/10 , H01L29/105 , H01L29/4236 , H01L29/66484 , H01L29/66666 , H01L29/66734 , H01L29/78 , H01L29/7813 , H01L29/7827 , H01L29/7831
摘要： A MOS transistor comprises a substrate, a first region formed over the substrate, a second region grown from the first region, a third region of formed in the second region, a first drain/source region formed in the third region, a first gate electrode formed in a first trench, a second drain/source region formed in the second region and on an opposite side of the first trench from the first drain/source region and a second trench coupled between the second drain/source region and the second region, wherein the second trench is of a same depth as the first trench.
摘要翻译： MOS晶体管包括衬底，形成在衬底上的第一区域，从第一区域生长的第二区域，在第二区域中形成的第三区域，形成在第三区域中的第一漏极/源极区域，第一栅极电极形成在第一沟槽中，第二漏极/源极区域形成在第二区域中，并且在第一沟槽与第一漏极/源极区域相反的一侧上，以及第二沟槽，其耦合在第二漏极/源极区域与第二区域之间，其中所述第二沟槽具有与所述第一沟槽相同的深度。

5. 发明申请

US20140015037A1 Novel Metal/Polysilicon Gate Trench Power Mosfet 有权
标题翻译：新型金属/多晶硅栅沟槽电源Mosfet
公开(公告)号：US20140015037A1
公开(公告)日：2014-01-16
申请号：US13545131
申请日：2012-07-10
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
IPC分类号： H01L29/78 , H01L21/283
CPC分类号： H01L29/7813 , H01L21/823418 , H01L21/823456 , H01L27/0922 , H01L29/407 , H01L29/41766 , H01L29/456 , H01L29/4941 , H01L29/66734 , H01L29/78 , H01L29/7809 , H01L29/7816 , H01L29/7835
摘要： The present disclosure relates to a power MOSFET device having a relatively low resistance hybrid gate electrode that enables good switching performance. In some embodiments, the power MOSFET device has a semiconductor body. An epitaxial layer is disposed on the semiconductor body. A hybrid gate electrode, which controls the flow of electrons between a source electrode and a drain electrode, is located within a trench extending into the epitaxial layer. The hybrid gate electrode has an inner region having a low resistance metal, an outer region having a polysilicon material, and a barrier region disposed between the inner region and the outer region. The low resistance of the inner region provides for a low resistance to the hybrid gate electrode that enables good switching performance for the power MOSFET device.
摘要翻译：本公开涉及具有相对低电阻的混合栅电极的功率MOSFET器件，其实现良好的开关性能。在一些实施例中，功率MOSFET器件具有半导体本体。外延层设置在半导体本体上。控制源电极和漏电极之间的电子流的混合栅电极位于延伸到外延层中的沟槽内。混合栅极具有具有低电阻金属的内部区域，具有多晶硅材料的外部区域和设置在内部区域和外部区域之间的阻挡区域。内部区域的低电阻提供了对功率MOSFET器件具有良好开关性能的混合栅电极的低电阻。

6. 发明申请

US20130320430A1 Vertical Power MOSFET and Methods of Forming the Same 有权
公开(公告)号：US20130320430A1
公开(公告)日：2013-12-05
申请号：US13486633
申请日：2012-06-01
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66666 , H01L21/265 , H01L21/30604 , H01L21/823425 , H01L29/402 , H01L29/4232 , H01L29/66484 , H01L29/7827 , H01L29/7831
摘要： A device includes a semiconductor layer of a first conductivity type, and a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a second conductivity type opposite the first conductivity type. A doped semiconductor region of the first conductivity type is disposed between and contacting the first and the second body regions. A gate dielectric layer is disposed over the first and the second body regions and the doped semiconductor region. A first and a second gate electrode are disposed over the gate dielectric layer, and overlapping the first and the second body regions, respectively. The first and the second gate electrodes are physically separated from each other by a space, and are electrically interconnected. The space between the first and the second gate electrodes overlaps the doped semiconductor region.

7. 发明授权

US08921934B2 FinFET with trench field plate 有权
标题翻译： FinFET与沟槽场板
公开(公告)号：US08921934B2
公开(公告)日：2014-12-30
申请号：US13546738
申请日：2012-07-11
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
IPC分类号： H01L29/66
CPC分类号： H01L29/401 , H01L29/0684 , H01L29/36 , H01L29/404 , H01L29/407 , H01L29/66704 , H01L29/7824 , H01L29/7825 , H01L29/7856
摘要： An integrated circuit device includes a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type, a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion, a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion, an oxide formed in the trench on opposing sides of the gate, and a field plate embedded in the oxide on each of the opposing sides of the gate.
摘要翻译：一种集成电路器件包括：衬垫层，其具有主体部分，该主体部分具有横向邻近具有第二掺杂类型的漂移区域部分的第一掺杂型，形成在焊盘层中的沟槽，沟槽延伸穿过主体部分的界面和漂移区部分，形成在沟槽中的栅极和沿着主体部分和漂移区部分的界面的焊盘层的顶表面上的栅极，形成在栅极的相对侧上的沟槽中的氧化物和嵌入的场板在栅极的每个相对侧上的氧化物中。

8. 发明授权

US08884369B2 Vertical power MOSFET and methods of forming the same 有权
标题翻译：垂直功率MOSFET及其形成方法
公开(公告)号：US08884369B2
公开(公告)日：2014-11-11
申请号：US13486633
申请日：2012-06-01
申请人： Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
发明人： Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
IPC分类号： H01L29/66
CPC分类号： H01L29/66666 , H01L21/265 , H01L21/30604 , H01L21/823425 , H01L29/402 , H01L29/4232 , H01L29/66484 , H01L29/7827 , H01L29/7831
摘要： A device includes a semiconductor layer of a first conductivity type, and a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a second conductivity type opposite the first conductivity type. A doped semiconductor region of the first conductivity type is disposed between and contacting the first and the second body regions. A gate dielectric layer is disposed over the first and the second body regions and the doped semiconductor region. A first and a second gate electrode are disposed over the gate dielectric layer, and overlapping the first and the second body regions, respectively. The first and the second gate electrodes are physically separated from each other by a space, and are electrically interconnected. The space between the first and the second gate electrodes overlaps the doped semiconductor region.
摘要翻译：一种器件包括第一导电类型的半导体层以及半导体层上的第一和第二体区，其中第一和第二体区具有与第一导电类型相反的第二导电类型。第一导电类型的掺杂半导体区域设置在第一和第二主体区域之间并且与第一和第二主体区域接触。栅极电介质层设置在第一和第二主体区域和掺杂半导体区域上。第一和第二栅极设置在栅极介电层上方，分别与第一和第二体区重叠。第一和第二栅电极在物理上彼此分开一个空间，并被电互连。第一和第二栅电极之间的空间与掺杂半导体区域重叠。

9. 发明授权

US08823096B2 Vertical power MOSFET and methods for forming the same 有权
标题翻译：垂直功率MOSFET及其形成方法
公开(公告)号：US08823096B2
公开(公告)日：2014-09-02
申请号：US13486768
申请日：2012-06-01
申请人： Po-Chih Su , Hsueh-Liang Chou , Ruey-Hsin Liu , Chun-Wai Ng
发明人： Po-Chih Su , Hsueh-Liang Chou , Ruey-Hsin Liu , Chun-Wai Ng
IPC分类号： H01L29/66
CPC分类号： H01L29/66666 , H01L21/30604 , H01L21/743 , H01L21/76877 , H01L21/823456 , H01L21/823487 , H01L21/823493 , H01L27/088 , H01L27/098 , H01L29/0847 , H01L29/402 , H01L29/7827 , H01L29/7833
摘要： A device includes a semiconductor region in a semiconductor chip, a gate dielectric layer over the semiconductor region, and a gate electrode over the gate dielectric. A drain region is disposed at a top surface of the semiconductor region and adjacent to the gate electrode. A gate spacer is on a sidewall of the gate electrode. A dielectric layer is disposed over the gate electrode and the gate spacer. A conductive field plate is over the dielectric layer, wherein the conductive field plate has a portion on a drain side of the gate electrode. A deep metal via is disposed in the semiconductor region. A source electrode is underlying the semiconductor region, wherein the source electrode is electrically shorted to the conductive field plate through the deep metal via.
摘要翻译：一种器件包括半导体芯片中的半导体区域，半导体区域上的栅极电介质层和栅极电介质上的栅电极。漏极区域设置在半导体区域的顶表面并与栅电极相邻。栅极间隔物位于栅电极的侧壁上。电介质层设置在栅电极和栅间隔物上。导电场板在电介质层的上方，其中导电场板具有在栅电极的漏极侧的一部分。深金属通孔设置在半导体区域中。源电极位于半导体区域的下方，其中源电极通过深金属通孔与导电场板电短路。

10. 发明申请

US20130181285A1 Lateral DMOS Device with Dummy Gate 有权
标题翻译：具有虚拟门的侧面DMOS设备
公开(公告)号：US20130181285A1
公开(公告)日：2013-07-18
申请号：US13351295
申请日：2012-01-17
申请人： Chun-Wai Ng , Ruey-Hsin Liu , Jun Cai , Hsueh-Liang Chou , Chi-Chih Chen
发明人： Chun-Wai Ng , Ruey-Hsin Liu , Jun Cai , Hsueh-Liang Chou , Chi-Chih Chen
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0649 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/42368
摘要： An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.
摘要翻译：具有伪栅极的LDMOS晶体管包括形成在衬底上的扩展漂移区，形成在扩展漂移区中的漏极区，形成在扩展漂移区中的沟道区，形成在沟道区中的源极区和形成的电介质层在扩展漂移区域上。具有伪栅极的LDMOS晶体管还包括形成在沟道区上的有源栅极和形成在扩展漂移区上的伪栅极。虚拟栅极有助于降低LDMOS晶体管的栅极电荷，同时保持LDMOS晶体管的击穿电压。

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