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1. 发明授权

US07468110B2 Hollow cathode target and methods of making same 有权
标题翻译：空心阴极靶及其制作方法
公开(公告)号：US07468110B2
公开(公告)日：2008-12-23
申请号：US11091029
申请日：2005-03-28
申请人： Robert B. Ford , Christopher A. Michaluk
发明人： Robert B. Ford , Christopher A. Michaluk
IPC分类号： C22F1/18 , C22F1/08 , C23C14/34 , C23C14/00 , C25B9/00 , C25B11/00 , C21D1/00
CPC分类号： H01J37/342 , C23C14/3407 , C23C14/3414 , H01J37/3491
摘要： Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.
摘要翻译：描述溅射靶和制造溅射靶的方法。该方法包括以下步骤：提供由阀金属制成的溅射金属工件; 横向冷轧溅射金属工件以获得轧制工件; 并对轧制工件进行冷加工以获得成形工件。溅射靶在至少侧壁上表现出基本一致的晶粒结构和/或纹理。

2. 发明授权

US06576069B1 Tantalum-silicon alloys and products containing the same and processes of making the same 失效
公开(公告)号：US06576069B1
公开(公告)日：2003-06-10
申请号：US09314506
申请日：1999-05-19
申请人： Louis E. Huber, Jr. , Christopher A. Michaluk
发明人： Louis E. Huber, Jr. , Christopher A. Michaluk
IPC分类号： C22C2702
CPC分类号： C22B5/04 , C22B34/24 , C22C1/045 , C22C27/02 , C22F1/18
摘要： An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta-Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta-Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state. Also, a method of increasing the uniformity of tensile strength in tantalum metal, a method of reducing embrittlement of tantalum metal, and a method of imparting a controlled mechanical tensile strength in tantalum metal are described which involve adding silicon to tantalum metal so as to form a Ta-Si alloy.

3. 发明授权

US08231744B2 Tantalum and niobium billets and methods of producing the same 有权
标题翻译：钽和铌坯及其制造方法
公开(公告)号：US08231744B2
公开(公告)日：2012-07-31
申请号：US12269077
申请日：2008-11-12
申请人： Christopher A. Michaluk
发明人： Christopher A. Michaluk
IPC分类号： C22C27/02
CPC分类号： C23C14/3414 , C22C27/02 , C22F1/18
摘要： Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.
摘要翻译：描述了挤出的钽坯和铌坯具有基本均匀的晶粒尺寸，优选平均晶粒尺寸为约150微米或更小，更优选平均晶粒尺寸为约100微米或更小。然后可以通过其它常规技术来锻造或加工挤出的坯料，以形成诸如溅射靶的最终用途产品。还描述了制造挤出的钽坯料或铌坯料的方法，并且包括在足够的温度下挤出起始坯料并且足够的时间使坯料至少部分地重结晶并形成本发明的挤出坯料。

4. 发明授权

US07601296B2 Powder metallurgy sputtering targets and methods of producing same 有权
标题翻译：粉末冶金溅射靶及其制造方法
公开(公告)号：US07601296B2
公开(公告)日：2009-10-13
申请号：US11431259
申请日：2006-05-10
申请人： Christopher A. Michaluk , Shi Yuan , James Maguire
发明人： Christopher A. Michaluk , Shi Yuan , James Maguire
IPC分类号： B22F1/00
CPC分类号： H01G9/0525 , B22F1/0088 , B22F2998/00 , B22F2999/00 , C23C8/02 , C23C8/80 , C23C14/3414 , H01J37/3426 , Y10T428/12049 , Y10T428/12104 , B22F3/15 , B22F3/20 , B22F2201/02
摘要： A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.
摘要翻译：描述了形成具有受控的氧和氮含量水平的溅射靶和其它金属制品的方法以及如此形成的制品。该方法包括对脱氧金属粉末进行表面氮化，还包括通过粉末冶金技术固化粉末。优选的金属粉末包括但不限于阀金属，包括钽，铌及其合金。

5. 发明授权

US06887356B2 Hollow cathode target and methods of making same 有权
标题翻译：空心阴极靶及其制作方法
公开(公告)号：US06887356B2
公开(公告)日：2005-05-03
申请号：US10036338
申请日：2001-11-09
申请人： Robert B. Ford , Christopher A. Michaluk
发明人： Robert B. Ford , Christopher A. Michaluk
IPC分类号： B21B3/00 , C22B5/12 , C22F1/00 , C22F1/08 , C22F1/18 , C23C14/34
CPC分类号： H01J37/342 , C23C14/3407 , C23C14/3414 , H01J37/3491
摘要： Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.
摘要翻译：描述溅射靶和制造溅射靶的方法。该方法包括以下步骤：提供由阀金属制成的溅射金属工件; 横向冷轧溅射金属工件以获得轧制工件; 并对轧制工件进行冷加工以获得成形工件。溅射靶在至少侧壁上表现出基本一致的晶粒结构和/或纹理。

6. 发明授权

US08168118B2 Powder metallurgy sputtering targets and methods of producing same 有权
标题翻译：粉末冶金溅射靶及其制造方法
公开(公告)号：US08168118B2
公开(公告)日：2012-05-01
申请号：US12552386
申请日：2009-09-02
申请人： Christopher A. Michaluk , Shi Yuan , James D. Maguire, Jr.
发明人： Christopher A. Michaluk , Shi Yuan , James D. Maguire, Jr.
IPC分类号： B22F1/00
CPC分类号： H01G9/0525 , B22F1/0088 , B22F2998/00 , B22F2999/00 , C23C8/02 , C23C8/80 , C23C14/3414 , H01J37/3426 , Y10T428/12049 , Y10T428/12104 , B22F3/15 , B22F3/20 , B22F2201/02
摘要： A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.
摘要翻译：描述了形成具有受控的氧和氮含量水平的溅射靶和其它金属制品的方法以及如此形成的制品。该方法包括对脱氧金属粉末进行表面氮化，还包括通过粉末冶金技术固化粉末。优选的金属粉末包括但不限于阀金属，包括钽，铌及其合金。

7. 发明授权

US07585380B2 High purity tantalum, products containing the same, and methods of making the same 有权
公开(公告)号：US07585380B2
公开(公告)日：2009-09-08
申请号：US10320980
申请日：2002-12-17
申请人： Christopher A. Michaluk , Louis E. Huber , Mark N. Kawchak , James D. Maguire, Jr.
发明人： Christopher A. Michaluk , Louis E. Huber , Mark N. Kawchak , James D. Maguire, Jr.
IPC分类号： C22F1/18 , C22B3/44
CPC分类号： C23C14/3414 , C22B34/24 , Y10S148/014 , Y10S148/158
摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.

8. 发明授权

US07431782B2 High purity tantalum, products containing the same, and methods of making the same 有权
标题翻译：高纯度钽，含有相同的产品及其制造方法
公开(公告)号：US07431782B2
公开(公告)日：2008-10-07
申请号：US10145336
申请日：2002-05-14
申请人： Christopher A. Michaluk , Louis E. Huber , Mark N. Kawchak , James D. Maguire, Jr.
发明人： Christopher A. Michaluk , Louis E. Huber , Mark N. Kawchak , James D. Maguire, Jr.
IPC分类号： C22F1/18 , C22B3/44 , C22B9/04
CPC分类号： C23C14/3414 , C22B34/24 , Y10S148/014 , Y10S148/158
摘要： High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about −4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted tantalum. The high purity tantalum preferably has a fine and uniform microstructure.
摘要翻译：描述了高纯度钽金属及含有它们的合金。钽金属的纯度优选为99.995％以上，更优选为99.999％以上。此外，描述了钽金属及其合金，其具有约50微米或更小的粒度，或其中任何5％厚度增量内的（100）强度小于约15度的质地，或（111）:( 100）强度的增量对数比大于约-4.0，或这些性质的任何组合。还描述了由钽金属制成的制品和部件，其包括但不限于溅射靶，电容器罐，电阻膜层，导线等。还公开了一种制备高纯度金属的方法，其包括使含盐钽与至少一种能够将该盐还原成钽粉末的化合物和在反应容器中的第二盐反应的步骤。反应容器中的反应容器或衬套以及搅拌器上的搅拌器或衬套由具有熔融钽的相同或更高蒸气压的金属材料制成。高纯度钽优选具有微细且均匀的微结构。

9. 发明授权

US06540851B2 Tantalum-silicon alloys and products containing the same and processes of making the same 失效
公开(公告)号：US06540851B2
公开(公告)日：2003-04-01
申请号：US09922049
申请日：2001-08-03
申请人： Louis E. Huber, Jr. , Christopher A. Michaluk
发明人： Louis E. Huber, Jr. , Christopher A. Michaluk
IPC分类号： C22F300
CPC分类号： C22B5/04 , C22B34/24 , C22C1/045 , C22C27/02 , C22F1/18
摘要： An alloy comprising tantalum and silicon is described. The tantalum is the predominant metal present. The alloy also has a uniformity of tensile strength when formed into a wire, such that the maximum population standard deviation of tensile strength for the wire is about 3 KSI for an unannealed wire at finish diameter and about 2 KSI for an annealed wire at finish diameter. Also described is a process of making a Ta—Si alloy which includes reducing a silicon-containing solid and a tantalum-containing solid into a liquid state and mixing the liquids to form a liquid blend and forming a solid alloy from the liquid blend. Another process of making a Ta—Si alloy is described which involves blending powders containing tantalum or an oxide thereof with powders containing silicon or a silicon-containing compound to form a blend and then reducing the blend to a liquid state and forming a solid alloy from the liquid state. Also, a method of increasing the uniformity of tensile strength in tantalum metal, a method of reducing embrittlement of tantalum metal, and a method of imparting a controlled mechanical tensile strength in tantalum metal are described which involve adding silicon to tantalum metal so as to form a Ta—Si alloy.

10. 发明授权

US06462339B1 Method for quantifying the texture homogeneity of a polycrystalline material 失效
标题翻译：用于量化多晶材料的织构均匀性的方法
公开(公告)号：US06462339B1
公开(公告)日：2002-10-08
申请号：US09665845
申请日：2000-09-20
申请人： Christopher A. Michaluk , David P. Field
发明人： Christopher A. Michaluk , David P. Field
IPC分类号： G01N23203
CPC分类号： H01J37/34 , C23C14/3414
摘要： A method for quantifying the texture homogeneity of a polycrystalline material is described. The method involves selecting a reference pole orientation; scanning in increments a cross-section of the polycrystalline material having a thickness with scanning orientation imaging microscopy or other measuring technique to obtain actual pole orientations of a multiplicity of grains throughout the cross-section of the polycrystalline material. The orientation differences between the reference pole orientation and actual pole orientations of a multiplicity of grains is then determined. A value of misorientation from the reference pole orientation at each grain measured throughout the thickness is then assigned. The average misorientation of each measured increment throughout the thickness is then determined. A texture gradient and/or texture banding can then be obtained by determining the first and/or second derivative, respectively, of the average misorientation of each measured increment through the thickness of the sample used for evaluation. A method to predict the sputtering efficiency of a target is also described as well as a system for quantifying the texture homogeneity of a polycrystalline material.
摘要翻译：描述了用于量化多晶材料的织构均匀性的方法。该方法涉及选择参考极方向; 用扫描方向成像显微镜或其他测量技术以增量的方式扫描具有厚度的多晶材料的横截面以在多晶材料的整个截面中获得多个晶粒的实际极取向。然后确定多个晶粒的参考极取向和实际极取向之间的取向差。然后分配在整个厚度处测量的每个颗粒处的参考极方向的取向偏差值。然后确定整个厚度中每个测量的增量的平均取向差。然后可以通过分别通过用于评估的样品的厚度来确定每个测量的增量的平均取向偏差的第一和/或二阶导数来获得纹理梯度和/或纹理条带。还描述了预测靶的溅射效率的方法以及用于量化多晶材料的织构均匀性的系统。

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