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1. 发明授权

US08735994B2 Electrical-free dummy gate 有权
标题翻译：无电气虚拟门
公开(公告)号：US08735994B2
公开(公告)日：2014-05-27
申请号：US13431072
申请日：2012-03-27
申请人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
发明人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
IPC分类号： H01L27/088
CPC分类号： H01L21/28123 , H01L29/42372 , H01L29/78
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes an electrical-free dummy gate formed over a substrate. The dummy gate has an elongate shape and is oriented along a first direction. The semiconductor device includes a first functional gate formed over the substrate. The first functional gate has an elongate shape and is oriented along the first direction. The first functional gate is separated from the dummy gate in a second direction perpendicular to the first direction. A first conductive contact is formed on the first functional gate. The semiconductor device includes a second functional gate formed over the substrate. The second functional gate has an elongate shape and is oriented along the first direction. The second functional gate is aligned with and physically separated from the dummy gate in the first direction. A second conductive contact is formed on the second functional gate.
摘要翻译：本发明提供一种半导体器件。半导体器件包括形成在衬底上的无电虚拟栅极。虚拟门具有细长形状并且沿着第一方向定向。半导体器件包括形成在衬底上的第一功能栅极。第一功能门具有细长形状并且沿着第一方向定向。第一功能门在垂直于第一方向的第二方向上与虚拟栅极分离。在第一功能栅极上形成第一导电接触。半导体器件包括形成在衬底上的第二功能栅极。第二功能门具有细长形状并且沿着第一方向定向。第二功能门与第一方向上的虚拟栅极对准并在物理上分离。在第二功能栅极上形成第二导电接触。

2. 发明申请

US20130273711A1 METHOD OF FORMING A FINFET DEVICE 有权
标题翻译：形成FINFET器件的方法
公开(公告)号：US20130273711A1
公开(公告)日：2013-10-17
申请号：US13449118
申请日：2012-04-17
申请人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
发明人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
IPC分类号： H01L21/762
CPC分类号： H01L21/3086 , H01L21/76224
摘要： A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
摘要翻译：公开了一种制造装置的方法。一种示例性的方法包括提供衬底并在衬底上形成多个鳍。该方法还包括在第一纵向方向上在基板中形成第一开口。该方法还包括在第二纵向方向上在基板中形成第二开口。第一和第二纵向是不同的。该方法还包括在第一和第二开口中沉积填充材料。

3. 发明授权

US08932936B2 Method of forming a FinFET device 有权
标题翻译：形成FinFET器件的方法
公开(公告)号：US08932936B2
公开(公告)日：2015-01-13
申请号：US13449118
申请日：2012-04-17
申请人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
发明人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/3086 , H01L21/76224
摘要： A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
摘要翻译：公开了一种制造装置的方法。一种示例性的方法包括提供衬底并在衬底上形成多个鳍。该方法还包括在第一纵向方向上在基板中形成第一开口。该方法还包括在第二纵向方向上在基板中形成第二开口。第一和第二纵向是不同的。该方法还包括在第一和第二开口中沉积填充材料。

4. 发明申请

US20130256809A1 ELECTRICAL-FREE DUMMY GATE 有权
标题翻译：电动门
公开(公告)号：US20130256809A1
公开(公告)日：2013-10-03
申请号：US13431072
申请日：2012-03-27
申请人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
发明人： Chia-Chu Liu , Kuei Shun Chen , Chiang Mu-Chi
IPC分类号： H01L29/423 , H01L27/088 , H01L21/283
CPC分类号： H01L21/28123 , H01L29/42372 , H01L29/78
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes an electrical-free dummy gate formed over a substrate. The dummy gate has an elongate shape and is oriented along a first direction. The semiconductor device includes a first functional gate formed over the substrate. The first functional gate has an elongate shape and is oriented along the first direction. The first functional gate is separated from the dummy gate in a second direction perpendicular to the first direction. A first conductive contact is formed on the first functional gate. The semiconductor device includes a second functional gate formed over the substrate. The second functional gate has an elongate shape and is oriented along the first direction. The second functional gate is aligned with and physically separated from the dummy gate in the first direction. A second conductive contact is formed on the second functional gate.
摘要翻译：本发明提供一种半导体器件。半导体器件包括形成在衬底上的无电虚拟栅极。虚拟门具有细长形状并且沿着第一方向定向。半导体器件包括形成在衬底上的第一功能栅极。第一功能门具有细长形状并且沿着第一方向定向。第一功能门在垂直于第一方向的第二方向上与虚拟栅极分离。在第一功能栅极上形成第一导电接触。半导体器件包括形成在衬底上的第二功能栅极。第二功能门具有细长形状并且沿着第一方向定向。第二功能门与第一方向上的虚拟栅极对准并在物理上分离。在第二功能栅极上形成第二导电接触。

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