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1. 发明授权

US09037814B2 Flash memory management method and flash memory controller and storage system using the same 有权
标题翻译：闪存管理方法和闪存控制器和存储系统使用相同
公开(公告)号：US09037814B2
公开(公告)日：2015-05-19
申请号：US12697525
申请日：2010-02-01
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1016 , G06F2212/7202
摘要： A flash memory management method for managing a plurality of physical units of a flash memory chip is provided. The flash memory management method includes grouping a portion of the physical units into a data area and a spare area; configuring a plurality of logical units and setting mapping relationships between the logical units and the physical units of the data area. The flash memory management method further includes receiving data and writing the data into the physical unit mapped to a second logical unit among the logical units, and the data belongs to a first logical unit among logical units. Accordingly, the flash memory management method can effectively reduce the number of times for organizing valid data, thereby reducing the time for executing a host write-in command.
摘要翻译：提供一种用于管理闪存芯片的多个物理单元的闪存管理方法。闪存管理方法包括将一部分物理单元分组成数据区和备用区; 配置多个逻辑单元并设置逻辑单元与数据区的物理单元之间的映射关系。闪速存储器管理方法还包括接收数据并将数据写入映射到逻辑单元中的第二逻辑单元的物理单元，并且数据属于逻辑单元中的第一逻辑单元。因此，闪速存储器管理方法可以有效地减少用于组织有效数据的次数，从而减少执行主机写入命令的时间。

2. 发明授权

US09037781B2 Method for managing buffer memory, memory controllor, and memory storage device 有权
标题翻译：用于管理缓冲存储器，存储器控制器和存储器存储设备的方法
公开(公告)号：US09037781B2
公开(公告)日：2015-05-19
申请号：US13472485
申请日：2012-05-16
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00 , G06F3/06 , G06F13/16 , G06F12/02 , G06F12/08
CPC分类号： G06F3/0656 , G06F3/0604 , G06F3/061 , G06F3/0679 , G06F12/0246 , G06F12/08 , G06F13/1673 , G06F2212/7203
摘要： A method for managing a buffer memory in a memory storage device is provided, wherein the memory storage device has a rewritable non-volatile memory module. The method includes transmitting temporary data from the buffer memory to a buffer area of the rewritable non-volatile memory module by using a pre-programmed command set, wherein the temporary data is not programmed into a storage area of the rewritable non-volatile memory module. The method also includes releasing a storage space storing the temporary data in the buffer memory and reloading the temporary data from the buffer area into the storage space of the buffer memory. Thereby, the method can temporarily increase available storage space of the buffer memory to meet the demand of additional operations.
摘要翻译：提供了一种用于管理存储器存储设备中的缓冲存储器的方法，其中存储器存储设备具有可重写的非易失性存储器模块。该方法包括：通过使用预编程的命令集，将临时数据从缓冲存储器发送到可重写非易失性存储器模块的缓冲区，其中临时数据不被编程到可重写非易失性存储器模块的存储区域中。该方法还包括将存储临时数据的存储空间释放在缓冲存储器中，并将临时数据从缓冲区重新加载到缓冲存储器的存储空间中。因此，该方法可以临时增加缓冲存储器的可用存储空间以满足附加操作的需求。

3. 发明授权

US08943264B2 Data storing method, and memory controller and memory storage apparatus using the same 有权
标题翻译：数据存储方法，以及使用其的存储器控制器和存储器存储装置
公开(公告)号：US08943264B2
公开(公告)日：2015-01-27
申请号：US13587923
申请日：2012-08-17
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202
摘要： A data storing method for a rewritable non-volatile memory module is provided. The method includes receiving page data to be stored in a first logical address. The method also includes determining whether a storage status of the rewritable non-volatile memory module is a predetermined status; if yes, using a first writing mode to write the page data into the rewritable non-volatile memory module; if no, using a second writing mode to write the page data into the rewritable non-volatile memory module. In the first writing mode, lower physical program units of the rewritable non-volatile memory module are applied for writing data, and upper physical program units of the rewritable non-volatile memory module are not applied for writing data; in the second writing mode, the upper physical program units and the lower physical program units are applied for writing data.
摘要翻译：提供了一种用于可重写非易失性存储器模块的数据存储方法。该方法包括接收要存储在第一逻辑地址中的页面数据。该方法还包括确定可重写非易失性存储器模块的存储状态是否是预定状态; 如果是，使用第一写入模式将页面数据写入可重写非易失性存储器模块; 如果否，则使用第二写入模式将页面数据写入可重写非易失性存储器模块。在第一写入模式中，应用可重写非易失性存储器模块的较低物理程序单元来写入数据，并且不将可重写非易失性存储器模块的较高物理程序单元应用于写入数据; 在第二写入模式中，应用上层物理程序单元和下部物理程序单元来写入数据。

4. 发明申请

US20130346674A1 DATA WRITING METHOD, MEMORY CONTROLLER AND MEMORY STORAGE DEVICE 有权
标题翻译：数据写入方法，存储器控制器和存储器存储器件
公开(公告)号：US20130346674A1
公开(公告)日：2013-12-26
申请号：US13596075
申请日：2012-08-28
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202
摘要： A data writing method for controlling a rewritable non-volatile memory module having a plurality of physical erase units is provided. The method includes: receiving a write command which instructs writing data to a first logical address, wherein the first logical address is mapped to a second physical erase unit; determining whether the second physical erase unit is in a sequential writing state which represents that the physical programming units over a predetermined ratio in the second physical erasing unit have been successively written sequentially within a predetermined time; if yes, writing the data into a third physical erasing unit in a first programming mode, wherein the first programming mode represents that a plurality of upper physical programming units are non-programmable. Accordingly, the data writing rate is increased.
摘要翻译：提供了一种用于控制具有多个物理擦除单元的可重写非易失性存储器模块的数据写入方法。该方法包括：接收指令向第一逻辑地址写入数据的写入命令，其中第一逻辑地址被映射到第二物理擦除单元; 确定所述第二物理擦除单元是否处于顺序写入状态，其表示所述物理编程单元超过所述第二物理擦除单元中的预定比率已经在预定时间内被顺序地写入; 如果是，则以第一编程模式将数据写入第三物理擦除单元，其中第一编程模式表示多个上层物理编程单元是不可编程的。因此，数据写入速率增加。

5. 发明申请

US20130332653A1 MEMORY MANAGEMENT METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE DEVICE USING THE SAME 审中-公开
标题翻译：存储器管理方法以及使用该存储器管理方法的存储器控制器和存储器存储器件
公开(公告)号：US20130332653A1
公开(公告)日：2013-12-12
申请号：US13585808
申请日：2012-08-14
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7204
摘要： A memory management method adapted to a rewritable non-volatile memory module having a plurality of physical erase units is provided. The operation mode of each physical erase unit is set to include three modes. A first mode indicates all physical program units to be programmable, a second mode and a third mode indicate upper physical program units to be non-programmable, but the third mode is unswitchable to the first or the second mode. The physical erase units are grouped into a first area and a second area. Each physical erase unit in the first area switchably operates in the first or the second mode, and each physical erase unit in the second area operates in the third mode. If a condition is satisfied, a physical erase unit in the first area is grouped to the second area. Thereby, the lifespan of the rewritable non-volatile memory module is prolonged.
摘要翻译：提供了一种适用于具有多个物理擦除单元的可重写非易失性存储器模块的存储器管理方法。每个物理擦除单元的操作模式被设置为包括三种模式。第一模式指示可编程的所有物理程序单元，第二模式和第三模式指示不可编程的高级物理程序单元，但是第三模式不可切换到第一或第二模式。物理擦除单元被分组成第一区域和第二区域。第一区域中的每个物理擦除单元可在第一或第二模式中切换操作，并且第二区域中的每个物理擦除单元在第三模式中操作。如果满足条件，则第一区域中的物理擦除单元被分组到第二区域。从而延长了可重写非易失性存储器模块的寿命。

6. 发明授权

US08607123B2 Control circuit capable of identifying error data in flash memory and storage system and method thereof 有权
标题翻译：能够识别闪存和存储系统中的错误数据的控制电路及其方法
公开(公告)号：US08607123B2
公开(公告)日：2013-12-10
申请号：US12542130
申请日：2009-08-17
申请人： Jiunn-Yeong Yang , Chih-Kang Yeh
发明人： Jiunn-Yeong Yang , Chih-Kang Yeh
IPC分类号： G11C29/00
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04
摘要： A flash memory control circuit including a microprocessor unit, a first interface unit for connecting a flash memory, a second interface unit for connecting a computer host, an error correcting unit, a memory management unit, and a marking unit is provided. The memory management unit divides each page in the flash memory into a plurality of data bit areas, and a plurality of redundancy bit areas and a plurality of error correcting bit areas corresponding to the data bit areas, wherein each of the data bit areas has a plurality of sectors for respectively storing a sector data. The marking unit stores a data accuracy mark corresponding to each sector data in the corresponding redundancy bit area to record the status of the sector data. Thereby, the flash memory controller can effectively identify error data in the flash memory by using the error correcting codes and the data accuracy marks.
摘要翻译：提供一种闪存控制电路，包括微处理器单元，用于连接闪存的第一接口单元，用于连接计算机主机的第二接口单元，纠错单元，存储器管理单元和标记单元。存储器管理单元将闪速存储器中的每一页划分成多个数据位区域，以及与数据位区域相对应的多个冗余位区域和多个纠错位区域，其中每个数据位区域具有多个扇区用于分别存储扇区数据。标记单元将对应于每个扇区数据的数据精度标记存储在相应的冗余位区域中，以记录扇区数据的状态。由此，闪存控制器可以通过使用纠错码和数据精度标记来有效地识别闪速存储器中的错误数据。

7. 发明授权

US08478949B2 Data accessing method for flash memory storage device having data perturbation module, and storage system and controller using the same 有权
公开(公告)号：US08478949B2
公开(公告)日：2013-07-02
申请号：US13418810
申请日：2012-03-13
申请人： Chien-Hua Chu , Chih-Kang Yeh
发明人： Chien-Hua Chu , Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0605 , G06F3/0659 , G06F3/067 , G06F12/1408 , G06F21/79 , G06F2212/7201
摘要： A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

8. 发明申请

US20130060990A1 DATA MOVING METHOD FOR FLASH MEMORY MODULE, AND MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME 有权
标题翻译：闪速存储器模块的数据移动方法，以及使用该存储器模块的存储器控制器和存储器存储装置
公开(公告)号：US20130060990A1
公开(公告)日：2013-03-07
申请号：US13309570
申请日：2011-12-02
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1024 , G06F2212/1044 , G06F2212/7203 , G06F2212/7205
摘要： A method of moving a first portion of data and a second portion of data, which belong to one page data and respectively stored in a second physical page and a third physical page, into a first physical page in a flash memory module is provided. The method includes transmitting a read command for reading page data stored in the second physical page; reading the first portion of data from a buffer area of the rewritable non-volatile memory module into a buffer memory; transmitting a read command for reading page data stored in the third physical page; transmitting the first portion of data from the buffer memory to the buffer area; and transmitting a write command for writing data stored in the buffer area into the first physical page. Accordingly, the method can effectively move one page data dispersedly stored in different physical pages into one physical page.
摘要翻译：提供了将属于一页数据并分别存储在第二物理页和第三物理页中的数据的第一部分数据和第二部分数据移动到闪速存储器模块中的第一物理页面中的方法。该方法包括发送用于读取存储在第二物理页中的页数据的读命令; 将数据的第一部分从可重写非易失性存储器模块的缓冲区读取到缓冲存储器中; 发送用于读取存储在第三物理页中的页数据的读命令; 将数据的第一部分从缓冲存储器传送到缓冲区; 以及发送用于将存储在所述缓冲区域中的数据写入所述第一物理页面的写入命令。因此，该方法可以将分散存储在不同物理页面中的一页数据有效地移动到一个物理页面中。

9. 发明授权

US08392691B2 Data management method, memory controller and memory storage apparatus 有权
标题翻译：数据管理方法，存储器控制器和存储器存储装置
公开(公告)号：US08392691B2
公开(公告)日：2013-03-05
申请号：US13030147
申请日：2011-02-18
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F13/00 , G06F13/28 , G06F9/26 , G06F9/34
CPC分类号： G06F12/0246
摘要： A data management method, a memory controller and a memory storage apparatus are provided. The method includes grouping physical units of a rewritable non-volatile memory module into at least a data area and a free area. The method also includes configuring logical units for mapping to the physical units of the data area and writing update data belonging to the logical pages of the logical units orderly into the physical pages of physical units gotten from the free area. The method further includes configuring root units for the logical pages, configuring an entry chain for each of the root units and building entries on the entry chains for recording update information of the updated logical pages, wherein each of the logical pages corresponds to a root unit. Accordingly, the table size for storing the update information is effectively reduced and the time for searching valid data is effectively shortened.
摘要翻译：提供了数据管理方法，存储器控制器和存储器存储装置。该方法包括将可重写非易失性存储器模块的物理单元分组成至少数据区域和自由区域。该方法还包括配置用于映射到数据区的物理单元的逻辑单元，并将属于逻辑单元的逻辑单元的更新数据有序地写入从空闲区域获得的物理单元的物理页面。该方法还包括配置逻辑页面的根单元，为每个根单元配置入口链，并在入口链上建立条目以记录更新的逻辑页的更新信息，其中每个逻辑页对应于根单元。因此，有效地减少用于存储更新信息的表格大小，有效缩短搜索有效数据的时间。

10. 发明申请

US20130054877A1 DATA WRITING METHOD, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS 有权
标题翻译：数据写入方法，存储器控制器和存储器存储器
公开(公告)号：US20130054877A1
公开(公告)日：2013-02-28
申请号：US13311572
申请日：2011-12-06
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A data writing method and a memory controller and a memory storage apparatus using the same are provided. The method includes selecting physical units as a global random area and building a global random searching table for recording update information corresponding to updated logical pages that data stored in the global random area belongs to. The method also includes receiving updated data belonging to a logical page of a logical unit, assigning an index number for the logical unit, writing the updated data into the global random area, and using the index number to record update information corresponding the logical page in the global random searching table. Accordingly, a global random searching table having smaller size can be used for recording update information corresponding to updated logical pages that data stored in the global random area belongs to.
摘要翻译：提供了数据写入方法和存储器控制器以及使用其的存储器存储装置。该方法包括：选择物理单元作为全局随机区域，并构建全局随机搜索表，用于记录与存储在全局随机区域中的数据所属的更新的逻辑页面相对应的更新信息。该方法还包括接收属于逻辑单元的逻辑页面的更新数据，为逻辑单元分配索引号，将更新后的数据写入全局随机区域，并使用索引号记录对应于逻辑页面的更新信息全局随机搜索表。因此，具有较小尺寸的全局随机搜索表可用于记录与存储在全球随机区域中的数据所属的更新的逻辑页面相对应的更新信息。

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