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1. 发明申请

WO2011139501A3 PAD CONDITIONING SWEEP TORQUE MODELING TO ACHIEVE CONSTANT REMOVAL RATE 审中-公开
标题翻译： PAD调节SWEEP扭矩建模以实现恒定移除速率
公开(公告)号：WO2011139501A3
公开(公告)日：2012-02-23
申请号：PCT/US2011032319
申请日：2011-04-13
申请人： APPLIED MATERIALS INC , DHANDAPANI SIVAKUMAR , MENK GREGORY E , CHO SANG J , FUNG JASON GARCHEUNG , COCCA CHRISTOPHER D , TSAI STAN D , CHANG SHOU-SUNG , GARRETSON CHARLES C
发明人： DHANDAPANI SIVAKUMAR , MENK GREGORY E , CHO SANG J , FUNG JASON GARCHEUNG , COCCA CHRISTOPHER D , TSAI STAN D , CHANG SHOU-SUNG , GARRETSON CHARLES C
IPC分类号： H01L21/304
CPC分类号： B24B53/017 , B24B37/042
摘要： A method and apparatus for conditioning a polishing pad in a CMP system is provided. In one embodiment, a method for conditioning a polishing pad includes applying a down force to the conditioning disk that urges the conditioning disk against the polishing pad, measuring a torque required to sweep the conditioning disk across the polishing pad, determining a change in down force by comparing the measured torque to a model force profile (MFP), and adjusting the down force that the conditioning disk applies against the polishing pad in response to the determined change.
摘要翻译：提供了一种用于调节CMP系统中的抛光垫的方法和装置。在一个实施例中，一种用于调节抛光垫的方法包括向调节盘施加向下的力，该调节盘将调节盘推向抛光垫，测量扫过经过抛光垫的调节盘所需的扭矩，确定向下力的变化通过将测量的扭矩与模型力分布（MFP）进行比较，并且响应于确定的变化来调节调节盘对抛光垫施加的向下的力。

2. 发明申请

WO2010044953A1 POLISHING PAD EDGE EXTENSION 审中-公开
标题翻译：抛光垫边缘延伸
公开(公告)号：WO2010044953A1
公开(公告)日：2010-04-22
申请号：PCT/US2009/054527
申请日：2009-08-20
申请人： APPLIED MATERIALS, INC. , CHEN, Hung Chih , CHANG, Shou-Sung , TSAI, Stan, D.
发明人： CHEN, Hung Chih , CHANG, Shou-Sung , TSAI, Stan, D.
IPC分类号： H01L21/304
CPC分类号： B24B37/20 , B24B37/34
摘要： A method and apparatus for conditioning a polishing pad is provided. The apparatus includes a polishing pad coupled to an upper surface of a platen, the polishing pad having a polishing surface, a support member coupled to a base of the platen adjacent a peripheral edge of the polishing pad, and a bearing material coupled to an upper surface of the support member, the bearing material having an upper surface that is coplanar with the polishing surface of the polishing pad. The method includes urging a conditioning disk against a polishing surface of a polishing pad, moving the conditioning disk across the polishing surface in a sweep pattern that includes at least a portion of the conditioning disk extending over a peripheral edge of the polishing surface, and maintaining a substantially uniform pressure to the polishing surface from the conditioning disk across the sweep pattern.
摘要翻译：提供了一种用于调理抛光垫的方法和装置。该装置包括耦合到压板的上表面的抛光垫，抛光垫具有抛光表面，耦合到压板的与抛光垫的周缘相邻的基座的支撑构件，以及联接到上部的轴承材料支撑构件的表面，轴承材料具有与抛光垫的抛光表面共面的上表面。所述方法包括将调节盘推向抛光垫的抛光表面，以调整图案的方式移动调节盘，该扫掠图案包括在抛光表面的周缘延伸的至少一部分调理盘，并且保持在整个扫描图案上从调节盘向抛光表面施加基本均匀的压力。

3. 发明申请

WO2007117301A3 BALL CONTACT COVER FOR COPPER LOSS REDUCTION AND SPIKE REDUCTION 审中-公开
标题翻译：用于铜减少和减少焦距的球接触罩
公开(公告)号：WO2007117301A3
公开(公告)日：2008-01-31
申请号：PCT/US2006060421
申请日：2006-11-01
申请人： APPLIED MATERIALS INC , MANENS ANTOINE P , DUBOUST ALAIN , OLGADO DONALD J K , WANG YAN , SALAS-VERNIS JOSE , CHANG SHOU-SUNG
发明人： MANENS ANTOINE P , DUBOUST ALAIN , OLGADO DONALD J K , WANG YAN , SALAS-VERNIS JOSE , CHANG SHOU-SUNG
IPC分类号： B24B37/16 , H01L21/321
CPC分类号： B24B37/16 , B23H5/08 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a contact assembly for electrochemically processing a substrate includes a housing having a ball disposed in a passage formed through the housing. The ball is adapted to extend partially from the housing to contact the substrate during processing. The housing comprises a conductive material. In another embodiment, the housing comprises a lower housing and a contact cover wherein the contact cover comprises a conductive material.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理衬底的方法和装置。在一个实施例中，用于电化学处理衬底的接触组件包括具有设置在通过壳体形成的通道中的球的壳体。该球适于在加工过程中从壳体部分延伸以接触基底。壳体包括导电材料。在另一个实施例中，壳体包括下壳体和接触盖，其中接触盖包括导电材料。

4. 发明申请

WO2006132725A1 CONDITIONING ELEMENT FOR ELECTROCHEMICAL MECHANICAL PROCESSING 审中-公开
标题翻译：电化学机械加工的条件元素
公开(公告)号：WO2006132725A1
公开(公告)日：2006-12-14
申请号：PCT/US2006/016429
申请日：2006-04-27
申请人： APPLIED MATERIALS, INC. , TIAN, Yuan A. , YILMAZ, Alpay , ALONZO, Gerald John , WOHLERT, Martin S. , HU, Yongqi , TSAI, Stan D. , EWALD, Robert A. , CHANG, Shou-Sung
发明人： TIAN, Yuan A. , YILMAZ, Alpay , ALONZO, Gerald John , WOHLERT, Martin S. , HU, Yongqi , TSAI, Stan D. , EWALD, Robert A. , CHANG, Shou-Sung
IPC分类号： B24B53/12 , B24B37/04 , B24B53/007
CPC分类号： B24B53/017 , B24B53/12
摘要： Embodiments of a conditioning element (208) for conditioning a processing pad are provided herein. In one embodiment, a conditioning element (208) for conditioning a processing pad includes a body having a face. A plurality of diamond particles (420) are disposed on the face and define a conditioning surface. The diamond particles (420) are of a type selected from the group consisting of very blocky (4D), blocky (3D), and irregular (2D), and have a shape ratio less than or equal to 1.2. In one embodiment, the diamond particles (420) have an average size of between about 85 and about 115 µm. In one embodiment, the size of the diamond particles (420) may have a standard of deviation that is less than about 5 µm. In one embodiment, the diamond particles may have a spacing of greater than 400 µm.
摘要翻译：本文提供了用于调理处理垫的调节元件（208）的实施例。在一个实施例中，用于调节处理垫的调节元件（208）包括具有面部的主体。多个金刚石颗粒（420）设置在面上并限定调节表面。金刚石颗粒（420）是选自非常块状（4D），块状（3D）和不规则（2D）的类型，并且具有小于或等于1.2的形状比。在一个实施方案中，金刚石颗粒（420）具有约85至约115μm的平均尺寸。在一个实施例中，金刚石颗粒（420）的尺寸可以具有小于约5μm的偏差标准。在一个实施例中，金刚石颗粒可以具有大于400μm的间隔。

5. 发明申请

WO2011133386A2 CLOSED-LOOP CONTROL FOR IMPROVED POLISHING PAD PROFILES 审中-公开
标题翻译：用于改进抛光垫轮廓的闭环控制
公开(公告)号：WO2011133386A2
公开(公告)日：2011-10-27
申请号：PCT/US2011/032447
申请日：2011-04-14
申请人： APPLIED MATERIALS, INC. , DHANDAPANI, Sivakumar , QIAN, Jun , COCCA, Christopher D. , FUNG, Jason Garcheung , CHANG, Shou-Sung , GARRETSON, Charles C. , MENK, Gregory E. , TSAI, Stan D.
发明人： DHANDAPANI, Sivakumar , QIAN, Jun , COCCA, Christopher D. , FUNG, Jason Garcheung , CHANG, Shou-Sung , GARRETSON, Charles C. , MENK, Gregory E. , TSAI, Stan D.
IPC分类号： B24B37/00 , B24B49/03 , B24B53/007 , H01L21/304
CPC分类号： B24B53/017 , B24B37/042
摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.
摘要翻译：本文所描述的实施例使用调节扫描的闭环控制（CLC）来实现整个衬垫寿命期间穿过衬垫的均匀凹槽深度去除。集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正可能随焊盘和磁盘寿命而出现的焊盘轮廓中的漂移。焊盘轮廓CLC可以通过持续调节均匀地减小槽深度，从而提供更长的消耗品寿命并降低运行成本。

6. 发明申请

WO2010017142A3 CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK 审中-公开
标题翻译：基于量测反馈的履带闭环控制
公开(公告)号：WO2010017142A3
公开(公告)日：2010-04-29
申请号：PCT/US2009052601
申请日：2009-08-03
申请人： APPLIED MATERIALS INC , CHANG SHOU-SUNG , CHEN HUNG CHIH , TSAI STAN D , WANG YUCHUN
发明人： CHANG SHOU-SUNG , CHEN HUNG CHIH , TSAI STAN D , WANG YUCHUN
IPC分类号： H01L21/304
CPC分类号： B24B37/042 , B24B49/02 , B24B53/017
摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.
摘要翻译：化学机械抛光设备包括计量系统，该计量系统在处理半导体晶片并减小抛光垫的厚度时检测抛光垫的厚度。该化学机械抛光设备包括控制器，该控制器在检测到抛光表面的高于或低于抛光垫的相邻区域的区域时调节抛光盘的材料去除速率。

7. 发明申请

WO2009132005A2 APPARATUS AND METHODS FOR USING A POLISHING TAPE CASSETTE 审中-公开
标题翻译：装置和使用抛光胶带的方法
公开(公告)号：WO2009132005A2
公开(公告)日：2009-10-29
申请号：PCT/US2009/041256
申请日：2009-04-21
申请人： APPLIED MATERIALS, INC. , MANENS, Antoine, P. , ETTINGER, Gary, C. , BUTTERFIELD, Paul, D. , CHANG, Shou-sung , MARTINEZ, Ricardo , KOLLATA, Eashwer , EWALD, Robert, A. , SUMBRIA, Kuldip
发明人： MANENS, Antoine, P. , ETTINGER, Gary, C. , BUTTERFIELD, Paul, D. , CHANG, Shou-sung , MARTINEZ, Ricardo , KOLLATA, Eashwer , EWALD, Robert, A. , SUMBRIA, Kuldip
IPC分类号： B24B21/00 , B24B7/00
CPC分类号： B24B21/004 , B24B9/065
摘要： Methods and apparatus are provided for housing a polishing tape adapted to polish a substrate. The invention includes a cassette comprising a body portion; and a head portion, wherein the head portion includes: a pair of guide walls; one or more supply rollers positioned between the guide walls in the head portion; and wherein the guide walls are adapted to guide a polishing tape housed in the body over the one or more supply rollers. Numerous other aspects are provided.
摘要翻译：提供了用于容纳适于抛光衬底的抛光带的方法和装置。本发明包括一个盒体，包括一个主体部分; 和头部，其中所述头部包括：一对引导壁; 一个或多个供应辊定位在头部中的引导壁之间; 并且其中所述引导壁适于将容纳在所述主体中的抛光带引导到所述一个或多个供给辊上。提供了许多其他方面。

8. 发明申请

WO2007117301A2 BALL CONTACT COVER FOR COPPER LOSS REDUCTION AND SPIKE REDUCTION 审中-公开
标题翻译：用于铜减少和减少焦距的球接触罩
公开(公告)号：WO2007117301A2
公开(公告)日：2007-10-18
申请号：PCT/US2006/060421
申请日：2006-11-01
申请人： APPLIED MATERIALS, INC. , MANENS, Antoine P. , DUBOUST, Alain , OLGADO, Donald J.k. , WANG, Yan , SALAS-VERNIS, Jose , CHANG, Shou-sung
发明人： MANENS, Antoine P. , DUBOUST, Alain , OLGADO, Donald J.k. , WANG, Yan , SALAS-VERNIS, Jose , CHANG, Shou-sung
IPC分类号： B24B37/16
CPC分类号： B24B37/16 , B23H5/08 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a contact assembly for electrochemically processing a substrate includes a housing having a ball disposed in a passage formed through the housing. The ball is adapted to extend partially from the housing to contact the substrate during processing. The housing comprises a conductive material. In another embodiment, the housing comprises a lower housing and a contact cover wherein the contact cover comprises a conductive material.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理衬底的方法和装置。在一个实施例中，用于电化学处理衬底的接触组件包括具有设置在通过壳体形成的通道中的球的壳体。该球适于在加工过程中从壳体部分延伸以接触基底。壳体包括导电材料。在另一个实施例中，壳体包括下壳体和接触盖，其中接触盖包括导电材料。

9. 发明申请

WO2010017142A2 CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK 审中-公开
标题翻译：基于计量反馈的扁平轮廓闭环控制
公开(公告)号：WO2010017142A2
公开(公告)日：2010-02-11
申请号：PCT/US2009/052601
申请日：2009-08-03
申请人： APPLIED MATERIALS, INC. , CHANG, Shou-sung , CHEN, Hung Chih , TSAI, Stan, D. , WANG, Yuchun
发明人： CHANG, Shou-sung , CHEN, Hung Chih , TSAI, Stan, D. , WANG, Yuchun
IPC分类号： H01L21/304
CPC分类号： B24B37/042 , B24B49/02 , B24B53/017
摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.
摘要翻译：化学机械抛光装置包括测量系统，其在处理半导体晶片时检测抛光垫的厚度，并且抛光垫的厚度减小。化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。

10. 发明申请

WO2010017000A2 IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING 审中-公开
标题翻译：通过闭环控制扭矩监测进行调节盘的现场性能预测
公开(公告)号：WO2010017000A2
公开(公告)日：2010-02-11
申请号：PCT/US2009/050471
申请日：2009-07-14
申请人： APPLIED MATERIALS, INC. , DESHPANDE, Sameer , CHANG, Shou-Sung , CHEN, Hung, Chin , NANGOY, Roy, C. , TSAI, Stan, D.
发明人： DESHPANDE, Sameer , CHANG, Shou-Sung , CHEN, Hung, Chin , NANGOY, Roy, C. , TSAI, Stan, D.
IPC分类号： H01L21/304
CPC分类号： B24B49/18 , B24B37/005 , B24B49/16 , B24B53/017
摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.
摘要翻译：在CMP机器中使用的抛光垫是可消耗的部件，通常在处理特定数量的晶片之后被替换。抛光垫的寿命通过控制由调节盘从抛光垫去除的材料的速率被优化。调节盘移除足够的材料，因此抛光表面可以适当地处理晶片，但不会去除任何多余的材料。防止多余的材料去除延长了抛光垫的使用寿命。在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂上的扭矩以扫掠经过抛光垫的调节盘的数据。基于检测到的操作条件，系统可以预测材料去除速率并调节施加到调节盘上的力，使抛光垫的寿命得以优化。

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