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1. 发明申请

WO2007047822A3 NANOPOROUS LOW-K FILMS WITH INFILTRATED POROSITY 审中-公开
标题翻译：具有渗透孔隙度的纳米低K膜
公开(公告)号：WO2007047822A3
公开(公告)日：2009-05-07
申请号：PCT/US2006040848
申请日：2006-10-18
申请人： ADVANCED TECH MATERIALS , VESYCK DANIEL J , BILODEAU STEVEN M , XU CHONGYING , CHEN PHILIP S H , ROEDER JEFFREY F
发明人： VESYCK DANIEL J , BILODEAU STEVEN M , XU CHONGYING , CHEN PHILIP S H , ROEDER JEFFREY F
IPC分类号： C08J9/26 , C08J9/28 , H01L21/00 , H01L21/02
CPC分类号： C23C16/56 , B82Y30/00 , C23C16/30
摘要： A reinforced porous dielectric material having porosity including pores at least partially closed by an infilled material. The material in one application includes a siloxane such as octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTS), or CH3(EtO2)SiCHCH2O (DEOMORS), which is infiltrated with a hydrocarbon, such as propylene, ethylene, dimethylsilane or divinyldimethylsilane, and thereafter subjected to conditions for immobilizing the infiltrated material, for reinforcement and enhanced strength and mechanical integrity of the dielectric material. By appropriate choice of infiltrating conditions, the porosity of the dielectric material can be partially filled at the neck regions of the pores, to form closed pore structure having voids that reduce the dielectric constant of the overall material. In a specific application, the infilled material is a ring compound that is self- cross-linked and/or reactively bonded to the wall surface of the dielectric material porosity.
摘要翻译：一种具有孔隙率的增强的多孔电介质材料，包括至少部分由填充材料封闭的孔。一种应用中的材料包括诸如丙烯，乙烯，二甲基硅烷或二乙烯基二甲基硅烷等烃类渗透的诸如八甲基环四硅氧烷（OMCTS），四甲基环四硅氧烷（TMCTS）或CH 3（EtO 2）SiCHCH 2 O（DEOMORS）的硅氧烷，用于固定渗透材料的条件，用于增强和提高电介质材料的强度和机械完整性。通过适当选择渗透条件，电介质材料的孔隙率可以部分地填充在孔的颈部区域，以形成具有减小整个材料的介电常数的空隙的闭孔结构。在具体应用中，填充材料是与电介质材料孔隙率的壁表面自交联和/或反应性结合的环化合物。

2. 发明申请

WO2005081933A2 CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM 审中-公开
标题翻译：高电导率的化学气相沉积，RENHENIUM的薄膜
公开(公告)号：WO2005081933A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/005609
申请日：2005-02-23
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , HENDRIX, Bryan, C. , WELCH, James, J. , BILODEAU, Steven, M. , ROEDER, Jeffrey, F. , XU, Chongying , BAUM, Thomas, H.
发明人： HENDRIX, Bryan, C. , WELCH, James, J. , BILODEAU, Steven, M. , ROEDER, Jeffrey, F. , XU, Chongying , BAUM, Thomas, H.
IPC分类号： C23C16/00 , C23C16/02 , C23C16/16 , C23C16/18 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

3. 发明申请

WO2012027667A3 METHOD FOR PREVENTING THE COLLAPSE OF HIGH ASPECT RATIO STRUCTURES DURING DRYING 审中-公开
标题翻译：用于防止干燥期间高比例结构褶皱的方法
公开(公告)号：WO2012027667A3
公开(公告)日：2012-05-10
申请号：PCT/US2011049347
申请日：2011-08-26
申请人： ADVANCED TECH MATERIALS , CHEN TIANNIU , BILODEAU STEVEN , SHEU CHIMIN , NAKANISHI MUTSUMI , MATSUOKA MASAHIRO , NAKAYAMA FUMIO , ZHANG PENG , KORZENSKI MICHAEL B , COOPER EMANUEL I , VECCHARELLI KATE , PAYNE MAKONNEN
发明人： CHEN TIANNIU , BILODEAU STEVEN , SHEU CHIMIN , NAKANISHI MUTSUMI , MATSUOKA MASAHIRO , NAKAYAMA FUMIO , ZHANG PENG , KORZENSKI MICHAEL B , COOPER EMANUEL I , VECCHARELLI KATE , PAYNE MAKONNEN
IPC分类号： H01L21/302
CPC分类号： C09C3/08 , B81C1/00619 , B81C1/00928 , H01L21/02082 , H01L21/302 , H01L21/306
摘要： Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.
摘要翻译：在干燥过程中减少脆性高纵横比结构所经受的毛细管力的方法，以基本上防止在干燥过程中对所述高纵横比结构造成损坏。它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。

4. 发明申请

WO2010033920A2 COMPOSITIONS AND METHODS FOR ENHANCING CELL REPROGRAMMING 审中-公开
标题翻译：增强细胞重编程的组合物和方法
公开(公告)号：WO2010033920A2
公开(公告)日：2010-03-25
申请号：PCT/US2009057692
申请日：2009-09-21
申请人： WHITEHEAD BIOMEDICAL INST , YOUNG RICHARD A , BILODEAU STEVEN , KAGEY MICHAEL
发明人： YOUNG RICHARD A , BILODEAU STEVEN , KAGEY MICHAEL
CPC分类号： C12N5/0696 , C12N2501/065
摘要： The invention provides compositions and methods of use to enhance reprogramming of mammalian cells. Certain compositions and methods of the invention are of use to enhance generation of induced pluripotent stem cells by reprogramming somatic cells. Certain compositions and methods of the invention are of use to enhance reprogramming of pluripotent mammalian cells to a differentiated cell type. Certain compositions and methods of the invention are of use to enhance reprogramming of differentiated mammalian cells of a first cell type to differentiated mammalian cells of a second differentiated cell type. The reprogrammed somatic cells are useful for a number of purposes, including treating or preventing a medical condition in an individual. The invention further provides methods for identifying an agent that enhances or contributes to reprogramming mammalian cells. Certain of the inventive compositions and methods relate to inhibiting histone methylation.
摘要翻译：本发明提供了用于增强哺乳动物细胞重编程的组合物和方法。本发明的某些组合物和方法可用于通过重编程体细胞来增强诱导多能干细胞的产生。本发明的某些组合物和方法可用于增强多能哺乳动物细胞重编程为分化细胞类型。本发明的某些组合物和方法可用于增强第一种细胞类型的分化哺乳动物细胞重编程为第二分化细胞类型的分化哺乳动物细胞。重编程的体细胞可用于多种目的，包括治疗或预防个体的医疗状况。本发明还提供了鉴定增强或有助于重编程哺乳动物细胞的试剂的方法。某些本发明的组合物和方法涉及抑制组蛋白甲基化。

5. 发明申请

WO2007041454A3 SYSTEMS AND METHODS FOR DETERMINATION OF ENDPOINT OF CHAMBER CLEANING PROCESSES 审中-公开
标题翻译：用于确定室清洁工艺端点的系统和方法
公开(公告)号：WO2007041454A3
公开(公告)日：2009-05-22
申请号：PCT/US2006038358
申请日：2006-10-03
申请人： ADVANCED TECH MATERIALS , CHEN ING-SHIN , NEUNER JEFFREY W , ROEDER JEFFREY F , BILODEAU STEVEN M , HENDRIX BRYAN C , CHEN PHILIP S H
发明人： CHEN ING-SHIN , NEUNER JEFFREY W , ROEDER JEFFREY F , BILODEAU STEVEN M , HENDRIX BRYAN C , CHEN PHILIP S H
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01L21/67253 , C23C16/4405 , C23C16/52 , H01J37/32862 , H01J37/32935 , H01J37/32963 , H01L21/67069
摘要： Apparatus and method for determination of the endpoint of a cleaning process in which cleaning fluid is contacted with a structure to effect cleaning thereof. The cleaning process includes contacting a cleaning fluid with a structure to be cleaned and producing a cleaning effluent having a sensible heat thermal energy characteristic corresponding to extent of cleaning of the structure, disposing an object in the cleaning effluent that interacts with the cleaning effluent to produce a response indicative of the sensible heat thermal energy characteristic of the cleaning effluent, and monitoring such response to determine when the cleaning is completed. An endpointing algorithm and endpoint monitoring are also described, as well as endpoint monitor sensor elements that are useful to determine endpoint conditions in an efficient and reproduceable manner.
摘要翻译：用于确定清洁过程的终点的装置和方法，其中清洁流体与结构接触以进行清洁。清洁过程包括使清洁流体与待清洁的结构接触并产生具有对应于结构清洁程度的显热热能特征的清洁流出物，将清洁物品放置在与清洁流出物相互作用的清洁流出物中以产生指示清洁流出物的显热热能特征的响应，以及监测这种响应以确定何时完成清洁。还描述了端点算法和端点监视，以及端点监视器传感器元件，其有效地以有效和可再现的方式确定端点条件。

6. 发明申请

WO2009002893A3 COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 审中-公开
标题翻译：太阳能吸附制冷系统的组件和制造这种组件的方法
公开(公告)号：WO2009002893A3
公开(公告)日：2009-02-19
申请号：PCT/US2008067824
申请日：2008-06-22
申请人： ADVANCED TECH MATERIALS , CARRUTHERS J DONALD , BOGGS KARL , WANG LUPING , WILSON SHAUN , ARNO JOSE I , MARGANSKI PAUL J , BILODEAU STEVEN M , ZOU PENG , BOBITA BRIAN , SWEENEY JOSEPH D , EDWARDS DOUGLAS
发明人： CARRUTHERS J DONALD , BOGGS KARL , WANG LUPING , WILSON SHAUN , ARNO JOSE I , MARGANSKI PAUL J , BILODEAU STEVEN M , ZOU PENG , BOBITA BRIAN , SWEENEY JOSEPH D , EDWARDS DOUGLAS
IPC分类号： F25B17/08 , F25B30/04 , F25B35/04
CPC分类号： B01J20/26 , B01J20/20 , B01J20/28054 , B01J20/28092 , B01J20/30 , B01J20/305 , B01J20/3078 , B01J2220/445 , C09K5/047 , F25B17/08 , F25B27/007 , F25B35/04 , F25B37/00 , F25B2500/01
摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
摘要翻译：描述了吸附结构，其包括由吸附剂材料形成的至少一个吸附构件和与吸附构件的一部分接触设置的至少一个多孔构件，以允许气体进入和离开吸附构件的该部分。这种吸附结构在吸附剂型制冷系统中有用。描述了一种用于生产吸附材料的方法，其中提供具有第一密度的第一聚合物材料和第二聚合物材料，其具有第二密度，其中第二聚合物材料与第一聚合物材料接触，形成一个结构。该结构被热解以形成多孔吸附材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔分布中的至少一个在第一区域和第第二个地区。

7. 发明申请

WO2009006272A1 PRECURSORS FOR SILICON DIOXIDE GAP FILL 审中-公开
标题翻译：硅二氧化硅填料的前身
公开(公告)号：WO2009006272A1
公开(公告)日：2009-01-08
申请号：PCT/US2008/068521
申请日：2008-06-27
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , HUNKS, William , XU, Chongying , HENDRIX, Bryan, C. , ROEDER, Jeffrey, F. , BILODEAU, Steven, M. , LI, Weimin
发明人： HUNKS, William , XU, Chongying , HENDRIX, Bryan, C. , ROEDER, Jeffrey, F. , BILODEAU, Steven, M. , LI, Weimin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L21/02211 , H01L21/02123 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02263 , H01L21/31604 , H01L21/31608 , H01L29/0649
摘要： A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO 2 /SiO 2 trench fill material. A suppressor component, e.g., methanol, may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.
摘要翻译：一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底和沟槽中的完整填充质量的二氧化硅，其中所述二氧化硅具有基本无空隙的特性，并且在其整个体积中具有基本均匀的密度质量。描述了制造半导体产品的相应方法，其涉及使用特定的硅前体组合物，用于完全填充微电子器件衬底的沟槽，其中二氧化硅前体组合物被处理以进行水解和缩合反应，以形成基本上在沟槽中的无空隙和基本均匀的密度二氧化硅材料。填充过程可以用包括硅和锗的前体填充组合物进行，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。可以在前体填充组合物中使用抑制剂组分，例如甲醇，以消除或最小化固化沟槽填充材料中的接缝形成。

8. 发明申请

WO2009002893A8 COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 审中-公开
标题翻译：用于太阳能吸附制冷系统的组件及制造该组件的方法
公开(公告)号：WO2009002893A8
公开(公告)日：2008-12-31
申请号：PCT/US2008/067824
申请日：2008-06-22
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CARRUTHERS, J., Donald , BOGGS, Karl , WANG, Luping , WILSON, Shaun , ARNO, Jose, I. , MARGANSKI, Paul, J. , BILODEAU, Steven, M. , ZOU, Peng , BOBITA, Brian , SWEENEY, Joseph, D. , EDWARDS, Douglas
发明人： CARRUTHERS, J., Donald , BOGGS, Karl , WANG, Luping , WILSON, Shaun , ARNO, Jose, I. , MARGANSKI, Paul, J. , BILODEAU, Steven, M. , ZOU, Peng , BOBITA, Brian , SWEENEY, Joseph, D. , EDWARDS, Douglas
IPC分类号： F25B17/08 , F25B30/04 , F25B35/04
摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
摘要翻译：描述了一种吸附结构，其包括由吸附材料形成的至少一个吸附构件和设置成与吸附构件的一部分接触以允许气体进入和离开该部分的至少一个多孔构件的吸附构件。这种吸附结构可用于基于吸附剂的制冷系统。还描述了一种制造吸附剂材料的方法，其中提供具有第一密度的第一聚合物材料和提供具有第二密度的第二聚合物材料，其中第二聚合物材料与第一聚合物材料接触以形成形成一个结构。该结构被热解以形成多孔吸附材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔隙分布中的至少一个在第一区域和第二个区域。

9. 发明申请

WO2005010941A3 ETHYLENEOXIDE-SILANE AND BRIDGED SILANE PRECURSORS FOR FORMING LOW K FILMS 审中-公开
标题翻译：用于形成低K膜的乙烯氧化物 - 硅烷和桥接硅烷前体
公开(公告)号：WO2005010941A3
公开(公告)日：2006-04-20
申请号：PCT/US2004022721
申请日：2004-07-01
申请人： ADVANCED TECH MATERIALS , BOROVIK ALEXANDER S , XU CHONGYING , BAUM THOMAS H , BILODEAU STEVEN , ROEDER JEFFREY R , EBBING ABIGAIL , VESTYCK DANIEL
发明人： BOROVIK ALEXANDER S , XU CHONGYING , BAUM THOMAS H , BILODEAU STEVEN , ROEDER JEFFREY R , EBBING ABIGAIL , VESTYCK DANIEL
IPC分类号： C07F7/18 , C09D4/00 , C23C16/40 , C07F7/08
CPC分类号： C23C16/401 , C07F7/0814 , C07F7/1836 , C07F7/184 , C07F7/1844 , C09D4/00 , C08G77/04
摘要： An organosilicon precursor for vapor deposition, e.g., low pressure (
摘要翻译：一种用于气相沉积的有机硅前体，例如低k（高于100托）的低k高强度电介质膜的等离子体增强化学气相沉积（PECVD），其中所述前体包括以下中的至少一种：（i）侧链环氧乙烷基官能团; 和（ii）下式的二甲硅烷基部分，其中x是0至4的整数，包括端值在内。这些前体可用于形成绝缘膜的介电常数约为3以下，硬度超过1吉比帕斯卡。

10. 发明申请

WO2010088194A2 LITHOGRAPHIC TOOL IN SITU CLEAN FORMULATIONS 审中-公开
标题翻译：地理清洁制剂中的地平线工具
公开(公告)号：WO2010088194A2
公开(公告)日：2010-08-05
申请号：PCT/US2010022050
申请日：2010-01-26
申请人： ADVANCED TECH MATERIALS , CHEN TIANNIU , BILODEAU STEVEN , BOGGS KARL E , JIANG PING , KORZENSKI MICHAEL B , MIRTH GEORGE , VAN BERKEL KIM
发明人： CHEN TIANNIU , BILODEAU STEVEN , BOGGS KARL E , JIANG PING , KORZENSKI MICHAEL B , MIRTH GEORGE , VAN BERKEL KIM
IPC分类号： C11D3/43 , C11D3/44
CPC分类号： C11D11/0041 , C11D1/66 , C11D1/667 , C11D1/825 , C11D3/2072 , C11D3/2093 , C11D3/43 , C11D11/0047 , G03F7/70341 , G03F7/70925
摘要： Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.
摘要翻译：使用所述组合物从表面除去聚合材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。

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