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    • 1. 发明授权
    • ATM switch
    • ATM交换机
    • US06463066B2
    • 2002-10-08
    • US09797696
    • 2001-03-05
    • Norihiko MoriwakiKenichi SakamotoAkihiko TakaseAkio MakimotoKazumasa Yanagisawa
    • Norihiko MoriwakiKenichi SakamotoAkihiko TakaseAkio MakimotoKazumasa Yanagisawa
    • H04J324
    • H04L49/108H04Q11/0478
    • Provided is a high-throughput large-capacity ATM switch in which variation in memory access time and data output delay time generated in the case where a DRAM is used as a cell buffer of the ATM switch is absorbed. To realize this, the ATM switch comprises a first memory using a DRAM for storing cells, a second memory using an SRAM for switching and temporarily storing the cells before transferring the cells to the first memory, and a controller for generating write/read address and timing signals for the first and second memories. The controller generates read address and timing signals for the second memory and write address and timing signals for the first memory taking variation in access time or delay time based on access address of the first memory into account, so that the cells are output on destination output lines after the cells are switched and stored in the second memory and then stored in the first memory.
    • 提供了一种高吞吐量大容量ATM交换机,其中在将DRAM用作ATM交换机的小区缓冲器的情况下产生的存储器访问时间和数据输出延迟时间的变化被吸收。 为了实现这一点,ATM交换机包括使用用于存储单元的DRAM的第一存储器,使用SRAM的第二存储器,用于在将单元传送到第一存储器之前切换和临时存储单元;以及控制器,用于产生写/ 用于第一和第二存储器的定时信号。 控制器产生用于第二存储器的读取地址和定时信号,并且基于第一存储器的存取地址来考虑第一存储器的存取时间或延迟时间的变化的写入地址和定时信号,从而在目的地输出 将单元切换并存储在第二存储器中,然后存储在第一存储器中。
    • 3. 发明授权
    • Cell buffer memory for a large capacity and high throughput ATM switch
    • 用于大容量和高吞吐量ATM交换机的单元缓冲存储器
    • US06249524B1
    • 2001-06-19
    • US09044171
    • 1998-03-19
    • Norihiko MoriwakiKenichi SakamotoAkihiko TakaseAkio MakimotoKazumasa Yanagisawa
    • Norihiko MoriwakiKenichi SakamotoAkihiko TakaseAkio MakimotoKazumasa Yanagisawa
    • H04J324
    • H04L49/108H04Q11/0478
    • Provided is a high-throughput large-capacity ATM switch in which variation in memory access time and data output delay time generated in the case where a DRAM is used as a cell buffer of the ATM switch is absorbed. To realize this, the ATM switch comprises a first memory using a DRAM for storing cells, a second memory using an SRAM for switching and temporarily storing the cells before transferring the cells to the first memory, and a controller for generating write/read address and timing signals for the first and second memories. The controller generates read address and timing signals for the second memory and write address and timing signals for the first memory taking variation in access time or delay time based on access address of the first memory into account, so that the cells are output on destination output lines after the cells are switched and stored in the second memory and then stored in the first memory.
    • 提供了一种高吞吐量大容量ATM交换机,其中在将DRAM用作ATM交换机的小区缓冲器的情况下产生的存储器访问时间和数据输出延迟时间的变化被吸收。 为了实现这一点,ATM交换机包括使用用于存储单元的DRAM的第一存储器,使用SRAM的第二存储器,用于在将单元传送到第一存储器之前切换和临时存储单元;以及控制器,用于产生写/ 用于第一和第二存储器的定时信号。 控制器产生用于第二存储器的读取地址和定时信号,并且基于第一存储器的存取地址来考虑第一存储器的存取时间或延迟时间的变化的写入地址和定时信号,从而在目的地输出 将单元切换并存储在第二存储器中,然后存储在第一存储器中。