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1. 发明申请

WO2003007383A3 ALGAN/GAN HEMTS HAVING A GATE CONTACT ON A GAN BASED CAP SEGMENT AND METHODS OF FABRICATING SAME 审中-公开
公开(公告)号：WO2003007383A3
公开(公告)日：2003-01-23
申请号：PCT/US2002/009398
申请日：2002-03-26
申请人： CREE, INC.
发明人： SMITH, Richard, Peter
IPC分类号： H01L29/778
摘要： High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the channel layer. A first ohmic contact is provided on the barrier layer (16) to provide a source electrode (18) and a second ohmic contact is also provided on the barrier layer (16) and is spaced apart from the source electrode (18) to provide a drain electrode (20). A GaN-based cap segment (30) is provided on the barrier layer (16) between the source electrode (18) and the drain electrode (20). The GaN-based cap segment (30) has a first sidewall (31) adjacent and spaced apart from the source electrode (18) and may have a second sidewall (32) adjacent and spaced apart from the drain electrode (20). A non-ohmic contact is provided on the GaN-based cap segment (30) to provide a gate contact (22). The gate contact (22) has a first sidewall (27) which is substantially aligned with the first sidewall (31) of the GaN-based cap segment (30). The gate contact (22) extends only a portion of a distance between the first sidewall (31) and the second sidewall (32) of the GaN-based cap segment (30).

2. 发明申请

WO2006023048A3 REFLECTIVE OPTICAL ELEMENTS FOR SEMICONDUCTOR LIGHT EMITTING DEVICES 审中-公开
公开(公告)号：WO2006023048A3
公开(公告)日：2006-03-02
申请号：PCT/US2005/022108
申请日：2005-06-22
申请人： CREE, INC. , NEGLEY, Gerald, H.
发明人： NEGLEY, Gerald, H.
IPC分类号： H01L33/00 , F21V7/04
摘要： Optical elements for semiconductor light emitting devices include a body that is configured to attach to a semiconductor light emitting device. The body includes an integral lens. A mirror is provided in and/or on the body. The body, the lens and the mirror are positioned such that, in operation, light that is emitted from the semiconductor light emitting device enters the body, is reflected from the mirror and passes through the lens to emerge from the body.

3. 发明申请

WO2004025719A2 NITROGEN PASSIVATION OF INTERFACE STATES IN SIO2/SIC STRUCTURES 审中-公开
标题翻译： SIO2 / SIC结构中氮界面钝化的界面态
公开(公告)号：WO2004025719A2
公开(公告)日：2004-03-25
申请号：PCT/US2003/026605
申请日：2003-08-25
申请人： CREE, INC. , SAXLER, Adam, William , DAS, Mrinal, Kanti
发明人： SAXLER, Adam, William , DAS, Mrinal, Kanti
IPC分类号： H01L21/314
CPC分类号： H01L21/049 , H01L21/3143 , H01L21/3145
摘要： A nitrided oxide layer on a silicon carbide layer is processed by annealing the nitrided oxide layer in a substantially oxygen-free nitrogen containing ambient. The anneal may be carried out at a temperature of greater than about 900 °C, for example, a temperature of about 1100 °C, a temperature of about 1200 °C or a temperature of about 1300 °C. Annealing the nitrided oxide layer may be carried out at a pressure of less than about 1 atmosphere, for example, at a pressure of from about 0.01 to about 1 atm or, in particular, at a pressure of about 0.2 atm. The nitrided oxide layer may be an oxide layer that is grown in a N 2 O and/or NO containing ambient, that is annealed in a N 2 O and/or NO containing ambient or that is grown and annealed in a N 2 O and/or NO containing ambient.
摘要翻译：通过在基本上无氧的含氮环境中退火氮化氧化物层来处理碳化硅层上的氮化氧化物层。退火可以在大于约900℃的温度下进行，例如约1100℃的温度，约1200℃的温度或约1300℃的温度。退火氮化氧化物层可以在小于约1个大气压的压力下进行，例如在约0.01至约1atm的压力下，或者特别是在约0.2atm的压力下进行。氮化氧化物层可以是在N 2 O和/或含NO的环境中生长的氧化物层，其在N 2 O和/或NO中退火含氮的环境中，或者在N 2 O和/或含NO的环境中生长并退火。

4. 发明申请

WO2003050994A1 PARALLEL RANDOM NUMBER DETERMINATIONS FOR A STREAM CIPHER UTILIZING A COMMON S-BOX 审中-公开
标题翻译：使用公共S-BOX的流水线机的并行随机数量确定
公开(公告)号：WO2003050994A1
公开(公告)日：2003-06-19
申请号：PCT/US2001/047774
申请日：2001-12-14
申请人： NETOCTAVE, INC. , BLAKER, David
发明人： BLAKER, David
IPC分类号： H04L9/00
CPC分类号： H04L9/065 , H04L2209/08 , H04L2209/125 , H04L2209/34
摘要： Parallel generation of random values of a stream cipher utilizing a common S-box is provided. The generation of the values includes determining if a collision exists between accesses of the common S-box. The determination of the two sequential random values is then modified based on whether a collision exists between accesses of the common S-box. The stream cipher may be the ARC-4 cipher.
摘要翻译：提供使用公共S盒的流密码的随机值的并行生成。值的生成包括确定在公共S盒的访问之间是否存在冲突。然后基于在公共S盒的访问之间是否存在冲突来修改两个顺序随机值的确定。流密码可以是ARC-4密码。

5. 发明申请

WO2002101767A3 HIGH VOLTAGE, HIGH TEMPERATURE CAPACITOR STRUCTURES AND METHODS OF FABRICATING SAME 审中-公开
公开(公告)号：WO2002101767A3
公开(公告)日：2002-12-19
申请号：PCT/US2002/009393
申请日：2002-03-26
申请人： CREE, INC.
发明人： DAS, Mrinal, Kanti , LIPKIN, Lori, A. , PALMOUR, John, W. , SHEPPARD, Scott , HAGLEITNER, Helmut
IPC分类号： H01L21/04
摘要： Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.

6. 发明申请

WO2002101767A2 HIGH VOLTAGE, HIGH TEMPERATURE CAPACITOR STRUCTURES AND METHODS OF FABRICATING SAME 审中-公开
标题翻译：高电压，高温电容器结构及其制造方法
公开(公告)号：WO2002101767A2
公开(公告)日：2002-12-19
申请号：PCT/US2002/009393
申请日：2002-03-26
申请人： CREE, INC.
发明人： DAS, Mrinal, Kanti , LIPKIN, Lori, A. , PALMOUR, John, W. , SHEPPARD, Scott , HAGLEITNER, Helmut
IPC分类号： H01G
CPC分类号： H01L29/7802 , H01G4/1272 , H01G4/20 , H01G4/33 , H01L21/045 , H01L21/049 , H01L27/0805 , H01L28/40 , H01L29/1608 , H01L29/408 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/78 , H01L29/8611 , H01L29/94
摘要： Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.
摘要翻译：提供了碳化硅的电容器和互连结构，其具有氧化物层，电介质材料层和介电材料层上的第二氧化物层。氧化物层的厚度可以是氧化物层的厚度和电介质材料层的约0.5至约33％。还提供了具有氧氮化硅层作为电介质结构的碳化硅的电容器和互连结构。这种介电结构可以在金属层之间，以提供金属 - 绝缘体 - 金属电容器，或者可以用作互连结构的金属间介质，从而提供具有改善的平均故障时间的装置和结构。还提供了制造这种电容器和结构的方法。

7. 发明申请

WO2002097904A3 GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE 审中-公开
公开(公告)号：WO2002097904A3
公开(公告)日：2002-12-05
申请号：PCT/US2002/016407
申请日：2002-05-23
申请人： CREE, INC.
发明人： EMERSON, David, Todd , IBBETSON, James , O'LOUGHLIN, Michael, John , NORDBY, Howard, Dean, Jr. , ABARE, Amber, Christine , BERGMANN, Michael, John , DOVERSPIKE, Kathleen, Marie
IPC分类号： H01L33/00
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of In X Ga 1-X N and In Y Ga 1-Y N, where 0 ≤ X

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