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1. 发明授权

US11908899B2 MOSFET and memory cell having improved drain current through back bias application 有权
公开(公告)号：US11908899B2
公开(公告)日：2024-02-20
申请号：US17535473
申请日：2021-11-24
申请人： Zeno Semiconductor, Inc.
发明人： Jin-Woo Han , Yuniarto Widjaja , Zvi Or-Bach , Dinesh Maheshwari
IPC分类号： H01L29/10 , H01L21/8238 , H01L29/786 , H10B63/00 , G11C13/00 , G11C11/404 , G11C16/04 , G11C16/10 , G11C16/26 , H01L21/761 , H01L27/02 , H01L27/092 , H01L27/12 , H01L29/08 , H01L29/423 , H01L29/78 , H01L21/265 , H01L29/06 , H01L29/32 , H01L29/788 , H01L29/792 , H03K19/0948 , H03K19/20 , H03K19/21
CPC分类号： H01L29/1087 , G11C11/404 , G11C16/04 , G11C16/10 , G11C16/26 , H01L21/761 , H01L21/823892 , H01L27/0218 , H01L27/092 , H01L27/0924 , H01L27/1203 , H01L27/1211 , H01L29/0847 , H01L29/1037 , H01L29/1083 , H01L29/1095 , H01L29/42356 , H01L29/78 , H01L29/785 , H01L29/78603 , H01L29/78645 , H01L29/78648 , H10B63/30 , G11C13/004 , G11C13/0069 , G11C16/0408 , G11C16/0466 , G11C2213/79 , H01L21/26513 , H01L29/0649 , H01L29/32 , H01L29/4238 , H01L29/42328 , H01L29/42344 , H01L29/7881 , H01L29/792 , H03K19/0948 , H03K19/20 , H03K19/21
摘要： A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

2. 发明授权

US11770664B2 Wax management system 有权
公开(公告)号：US11770664B2
公开(公告)日：2023-09-26
申请号：US17467205
申请日：2021-09-04
申请人： Eargo, Inc.
发明人： Michael Barrett , Manny Ocano , Daniel Shen , Iain Butler , Florent Michel , Raphael Michel , Keith Wong
IPC分类号： H04R25/00 , H04R1/10
CPC分类号： H04R25/654 , H04R1/1016 , H04R25/652 , H04R25/658 , H04R25/656 , H04R2225/023 , H04R2225/025 , H04R2460/17
摘要： A guard for a space access device is configured to output air flow through a distal end portion thereof. The guard includes q housing having a proximal end opening, a distal end opening, and a filter portion positioned between the proximal and distal end openings. The filter includes a first plate having a first opening therethrough and a second plate having a second opening therethrough. When the first plate is overlaid in contact with the second plate, this forms an aperture that extends through both the first and second plates.

3. 发明授权

US11699484B2 Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers 有权
公开(公告)号：US11699484B2
公开(公告)日：2023-07-11
申请号：US17548188
申请日：2021-12-10
申请人： Zeno Semiconductor, Inc.
发明人： Benjamin S. Louie , Yuniarto Widjaja , Zvi Or-Bach
IPC分类号： G11C11/419 , G11C11/417 , G11C8/16 , G11C11/412 , G06F30/30 , G06F30/39 , H10B10/00
CPC分类号： G11C11/419 , G06F30/30 , G06F30/39 , G11C8/16 , G11C11/412 , G11C11/417 , H10B10/00
摘要： A floating body SRAM cell that is readily scalable for selection by a memory compiler for making memory arrays is provided. A method of selecting a floating body SRAM cell by a memory compiler for use in array design is provided.

4. 发明授权

US11600663B2 Memory cell and memory array select transistor 有权
公开(公告)号：US11600663B2
公开(公告)日：2023-03-07
申请号：US16740652
申请日：2020-01-13
申请人： Zeno Semiconductor, Inc.
发明人： Jin-Woo Han , Yuniarto Widjaja
IPC分类号： H01L27/24 , H01L27/11517 , H01L27/22
摘要： A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) with increased on-state current obtained through a parasitic bipolar junction transistor (BJT) of the MOSFET. Methods of operating the MOSFET as a memory cell or a memory array select transistor are provided.

5. 发明授权

US11565122B2 Apparatus and methods for phototherapy 有权
公开(公告)号：US11565122B2
公开(公告)日：2023-01-31
申请号：US17566892
申请日：2021-12-31
申请人： Chine, LLC
发明人： John MacMahon
IPC分类号： A61N5/00 , A61N5/06
摘要： Apparatus and methods of controlled therapeutic modulation of an immune response by an immune system of a patient. UV radiation is applied to the skin of a patient for a predetermined time period or dose. The application of UV radiation is repeated for the predetermined time or dose or for a modified predetermined time period or dose based on patient feedback after applying for the predetermined time period or dose, multiple times, wherein each repetition is performed after a predetermined rest period has passed. The patient is tested after at least one session of application of UV radiation and levels of one or more indicators read by the test are compared to levels that were established as baseline levels from a test taken before the initial application of UV radiation. The treatments are discontinued when a predetermined differential threshold between retesting levels and baseline levels in at least one indicator has been met, or for a predetermined number of times, whichever occurs first.

6. 发明授权

US11534183B2 Devices, apparatus and methods for patient-specific MIS procedures 有权
公开(公告)号：US11534183B2
公开(公告)日：2022-12-27
申请号：US17169435
申请日：2021-02-06
申请人： SpineCraft, LLC
发明人： Mohammed Akallal , Wagdy W. Asaad
IPC分类号： A61B17/17 , A61B34/10 , A61B17/70 , A61B17/02 , A61B17/90
摘要： Devices, apparatus and methods for patient-specific MIS procedures. A patient-specific, MIS navigation guide device may include a main body having a proximal surface and a distal surface, wherein the distal surface is configured to face target tissue upon placement of said MIS navigation guide device. Anchors extend distally of the distal surface, and distal ends of the anchors lie on a three dimensional surface that matches contours of the target tissue in locations where the anchors are designed to contact. An operational guide is configured to guide the performance of a surgical operational step on the target tissue along an optimal pathway predefined by the operational guide relative to the main body. A position indicator on the device is interpretable by a surgeon to know when the anchors have not yet been contacted to the target tissue in a predetermined orientation and to know when the anchors have been contacted to the target tissue in the predetermined orientation.

7. 发明授权

US11317943B2 MIS access port and methods of using 有权
公开(公告)号：US11317943B2
公开(公告)日：2022-05-03
申请号：US16704341
申请日：2019-12-05
申请人： SpineCraft, LLC
发明人： Steven E. Mather , Wagdy W. Asaad
IPC分类号： A61B17/34 , A61B1/07 , A61B1/00 , A61B90/30 , A61B17/02 , A61B50/20 , A61B17/00 , A61F2/46
摘要： A method of performing minimally invasive surgery includes inserting an access port through the skin of a patient and positioning the access port so that a distal end of the access port enters or is in contact with an intervertebral disk. An instrument is inserted through the access port such that a distal end portion of the instrument extends into the intervertebral disk, and the instrument is manipulated to pass a shaft portion of the instrument through at least a portion of a slot of the port.

8. 发明授权

US11295813B2 Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating 有权
公开(公告)号：US11295813B2
公开(公告)日：2022-04-05
申请号：US17107904
申请日：2020-11-30
申请人： Zeno Semiconductor, Inc.
发明人： Yuniarto Widjaja
IPC分类号： G11C11/40 , G11C14/00 , G11C11/14 , G11C11/404 , G11C11/56 , G11C13/00 , H01L27/108 , H01L27/24 , H01L29/78 , H01L27/102 , H01L45/00 , G06F3/06 , G11C11/402 , G11C11/4067 , H01L27/12
摘要： Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

9. 发明授权

US11250905B2 Memory device comprising electrically floating body transistor 有权
公开(公告)号：US11250905B2
公开(公告)日：2022-02-15
申请号：US17161403
申请日：2021-01-28
申请人： Zeno Semiconductor, Inc.
发明人： Jin-Woo Han , Neal Berger , Yuniarto Widjaja
IPC分类号： G11C16/04 , G11C11/402 , G11C11/4074 , G11C11/4094 , G11C11/4096 , G11C16/08 , H01L27/108 , H01L29/73 , H01L29/78 , H01L27/102 , H01L29/70 , H01L29/788 , G11C11/401 , G11C11/4076 , G11C29/50 , G11C8/12 , G11C8/10 , G11C8/00 , G11C5/06
摘要： A semiconductor memory instance is provided that includes an array of memory cells. The array includes a plurality of semiconductor memory cells arranged in at least one column and at least one row. Each of the semiconductor memory cells includes a floating body region configured to be charged to a level indicative of a state of the memory cell. Further includes are a plurality of buried well regions, wherein each of the buried well regions can be individually selected, and a decoder circuit to select at least one of the buried well regions.

10. 发明授权

US10861548B2 Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating 有权
公开(公告)号：US10861548B2
公开(公告)日：2020-12-08
申请号：US16710423
申请日：2019-12-11
申请人： Zeno Semiconductor, Inc.
发明人： Yuniarto Widjaja
IPC分类号： G11C11/00 , G11C14/00 , G11C11/404 , H01L29/78 , H01L27/108 , G11C11/4072 , G11C13/00 , H01L45/00 , H01L27/24 , G11C11/21 , G11C11/407
摘要： A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

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