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1. 发明授权

US06924062B2 Nickel-metal hydride storage battery 失效
标题翻译：镍氢蓄电池
公开(公告)号：US06924062B2
公开(公告)日：2005-08-02
申请号：US10321397
申请日：2002-12-18
申请人： Yoshifumi Magari , Tadayoshi Tanaka , Hiroyuki Akita , Katsuhiko Shinyama , Atsuhiro Funahashi , Toshiyuki Nohma
发明人： Yoshifumi Magari , Tadayoshi Tanaka , Hiroyuki Akita , Katsuhiko Shinyama , Atsuhiro Funahashi , Toshiyuki Nohma
IPC分类号： C22C19/00 , H01M4/24 , H01M4/32 , H01M4/36 , H01M4/38 , H01M4/52 , H01M4/62 , H01M4/66 , H01M4/80 , H01M10/24 , H01M10/30 , H01M10/34 , H01M10/42
CPC分类号： H01M4/801 , H01M4/242 , H01M4/32 , H01M4/366 , H01M4/383 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/345 , H01M10/4235 , H01M2004/027 , H01M2004/028 , Y02E60/124
摘要： A nickel-metal hydride storage battery which includes a positive electrode containing nickel hydroxide, a negative electrode containing a hydrogen absorbing alloy and an alkaline electrolyte, wherein the positive electrode contains a hydroxide and/or an oxide of an element selected from the group consisting of calcium, strontium, scandium, yttrium, lanthanoid and bismuth, and the negative electrode contains a hydroxide and/or an oxide of at least one element selected from the group consisting of scandium, yttrium and lanthanoid.
摘要翻译：一种镍氢蓄电池，其包括含有氢氧化镍的正极，含有吸氢合金的负极和碱性电解质，其中所述正极含有选自以下的元素的氢氧化物和/或氧化物：钙，锶，钪，钇，镧系元素和铋，负极含有选自钪，钇和镧系元素中的至少一种元素的氢氧化物和/或氧化物。

2. 发明授权

US07455826B2 Layered titanic acid, lamellar titanic acid, lamellar titanium oxide and method for producing lamellar titanic acid 失效
标题翻译：层状钛酸，层状钛酸，层状二氧化钛和层状钛酸的制造方法
公开(公告)号：US07455826B2
公开(公告)日：2008-11-25
申请号：US10487152
申请日：2002-08-13
申请人： Akiyoshi Inubushi , Harue Matsunaga , Ryoichi Hiroi
发明人： Akiyoshi Inubushi , Harue Matsunaga , Ryoichi Hiroi
IPC分类号： C01G23/00
CPC分类号： B82Y30/00 , C01G23/002 , C01G23/003 , C01G23/005 , C01G45/006 , C01G49/009 , C01P2002/22 , C01P2002/52 , C01P2002/54 , C01P2002/84 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/80
摘要： A layered titanic acid produced by subjecting a layered titanate represented by a general formula: AxMy□zTi2−(y+z)O4, wherein A and M represent metals having a valence of 1 to 3 and being different from each other, □ represents a defect to be occupied by titanium, x is a positive and real number satisfying 0
摘要翻译：通过对由通式表示的层状钛酸盐进行制备的层状钛酸：A M 2 N 2 N 2 y + z）O 4，其中A和M表示价数为1至3并且彼此不同的金属，□表示钛占据的缺陷，x是对于酸处理，满足0

3. 发明授权

US07646081B2 Low-K dielectric material 有权
标题翻译：低K电介质材料
公开(公告)号：US07646081B2
公开(公告)日：2010-01-12
申请号：US10563801
申请日：2004-07-08
申请人： Juha T. Rantala
发明人： Juha T. Rantala
IPC分类号： H01L23/58
CPC分类号： H01L21/31633 , C07B2200/11 , C07F7/1804 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02277 , H01L21/02345
摘要： Method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing. The method comprises using a precursor containing chemical compound having the formula of (R1-R2)n-Si—(X1)4-n, wherein X1 is hydrogen, halogen, acyloxy, alkoxy or OH group, R2 is an optional group and comprises an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 selected from an alkyl group having from 1 to 4 carbon atoms, an alkenyl group having from 2 to 5 carbon atoms, an alkynyl group having from 2 to 5 carbon atoms, Cl or F; n is an integer 1-3. The present precursors allow for a lowering of the electronic dielectric constant compared to conventional dielectric materials, such as silicon dioxide or phenyl modified organo-containing silicon dioxide.
摘要翻译：通过CVD处理在半导体衬底上形成低介电常数结构的方法。该方法包括使用含有式（R1-R2）n-Si-（X1）4-n的化合物的前体，其中X 1是氢，卤素，酰氧基，烷氧基或OH基，R 2是任选的基团，具有6个碳原子的芳族基团，R 1是选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基的第4位的取代基原子，Cl或F; n是整数1-3。与常规电介质材料相比，本发明的前体允许降低电子介电常数，例如二氧化硅或苯基改性的含有机硅的二氧化硅。

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